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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Frequency Domain Detection and Precoding for Massive MIMO With Single Carrier Modulation

Single carrier modulation (SCM) schemes are attractive for uplink (UL) transmissions due to improved power efficiency at the user equipment (UE) transmitter compared with multi-carrier modulation schemes. In a massive MIMO scenario with SCM, the UL detection must mitigate the effects of inter-symbol interference and multiuser interference. This processing is effectively performed in the frequency domain (FD) using a minimum mean squared error (MMSE) detector when the transmission is framed with a cyclic prefix. This paper presents a MMSEbased detector that is compatible with distributed processing in a time-division duplex (TDD) system. The matrix inverses computed for the UL detection are then reused to perform multi-user precoding for the downlink (DL). We find that this scheme yields a tremendous savings in computational complexity compared to commonly used zero-forcing (ZF) precoding without sacrificing any performance. Since MMSE processing introduces a bias to the estimates, we then derive the scalar coefficients necessary to cancel the MMSE bias. The impact of channel estimation errors are analyzed for both the UL and DL cases in conjunction with a power-efficient approach to SCM channel estimation. Moreover, extensive simulations are performed to confirm our theoretical findings.

42 ENGINEERING↗
DOE OSTI2015

Superior thermoelectric performance in PbTe-PbS pseudo-binary. Extremely low thermal conductivity and modulated carrier concentration

Lead chalcogenides have exhibited their irreplaceable role as thermoelectric materials at the medium temperature range, owing to highly degenerate electronic bands and intrinsically low thermal conductivities. PbTe-PbS pseudo-binary has been paid extensive attentions due to the even lower thermal conductivity which originates largely from the coexistence of both alloying and phase-separated precipitations. To investigate the competition between alloying and phase separation and its pronounced effect on the thermoelectric performance in PbTe-PbS, we systematically studied Spark Plasma Sintered (SPSed), 3 at% Na- doped (PbTe) 1-x (PbS)x samples with x=10%, 15%, 20%, 25%, 30% and 35% by means of transmission electron microscopy (TEM) observations and theoretical calculations. Corresponding to the lowest lattice thermal conductivity as a result of the balance between point defect- and precipitates- scattering, the highest figure of merit ZT~2.3 was obtained at 923 K when PbS phase fraction x is at 20%. The consistently lower lattice thermal conductivities in SPSed samples compared with corresponding ingots, resulting from the powdering and follow-up consolidation processes, also contribute to the observed superior ZT. Notably, the onset of carrier concentration modulation ~600 K due to excessive Na’s diffusion and re-dissolution leads to the observed saturations of electrical transport properties, which is believed equally crucial to the outstanding thermoelectric performance of SPSed PbTe-PbS samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-efficiency micro-energy generation based on free-carrier-modulated ZnO:N piezoelectric thin films

The free-carrier-modulated ZnO:N thin film-based flexible nanogenerators (NZTF-FNGs) are proposed and experimentally demonstrated. The suggested flexible nanogenerators (FNGs) are fabricated using N-doped ZnO thin films (NZTFs) as their piezoelectric active elements, which are deposited by a radio frequency magnetron sputtering technique with an N{sub 2}O reactive gas as an in situ dopant source. Considerable numbers of N atoms are uniformly incorporated into NZTFs overall during their growth, which would enable them to significantly compensate the unintentional background free electron carriers both in the bulk and at the surface of ZnO thin films (ZTFs). This N-doping approach is found to remarkably enhance the performance of NZTF-FNGs, which shows output voltages that are almost two orders of magnitude higher than those of the conventionally grown ZnO thin film-based FNGs. This is believed to be a result of both substantial screening effect suppression in the ZTF bulk and more reliable Schottky barrier formation at the ZTF interfaces, which is all mainly caused by the N-compensatory doping process. Furthermore, the NZTF-FNGs fabricated are verified via charging tests to be suitable for micro-energy harvesting devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures

Dynamically manipulating carriers in van der Waals heterostructures could enable solid-state quantum simulators with tunable lattice parameters. A key requirement is the formation of deep potential wells to reliably trap excitations. Here, we report the observation of nonlinear acoustoelectric transport and dynamic carrier modulation in boron nitride-encapsulated graphene devices coupled to intense surface acoustic waves (SAWs) on LiNbO 3 substrates. SAWs generate strong acoustoelectric current densities ( J AE ), transitioning from linear to nonlinear regimes with increasing SAW intensity. In the nonlinear regime, periodic carrier (electrons, holes, or their mixtures) stripes emerge. Using counter-propagating SAWs, we create standing SAWs (SSAWs) to dynamically manipulate charge distributions without static gates. The saturation of J AE , attenuation transitions, and tunable resistance peaks confirms strong carrier localization. Finally, these results establish SAWs as a powerful tool for controlling carrier dynamics in two-dimensional (2D) materials, paving the way for the development of time-dependent quantum systems and acoustic lattices for quantum simulation.

2D materials↗
DOE OSTI2021

Frequency Domain Multi-user Processing for Single Carrier Modulation with Cyclic Prefix

Frequency domain (FD) detection and precoding have been shown to be effective means of approaching the theoretical per-user capacity for single carrier modulation SCM) schemes. When a cyclic prefix is added to the SCM waveform, the circulant structures of the resulting convolutional channel matrix allows for relatively simple expressions for the FD processing, and achieves performance near the theoretical capacity even for high signal to noise ratio values. This paper details the signal processing for uplink and downlink multi-user operation with a multi-antenna base station.

5G and Beyond Communication↗
DOE OSTI2021

Efficient Precoding for Single Carrier Modulation in Multi-User Massive MIMO Networks

Abstract—Frequency domain (FD) multi-user detection (MUD) and precoding has been shown to be an effective means of approaching the theoretical per-user capacity for single carrier modulation (SCM) schemes in massive MIMO scenarios with highly dispersive channels. When a cyclic prefix is added to the SCM waveform, the circulant structures of the resulting convolutional channel matrix allows for relatively simple expressions for the FD detection and precoding. In this paper, we further refine the computationally efficient minimum mean squared error (MMSE) FD-MUD technique in a time-division duplexing (TDD) massive MIMO setup by pre-computing the scale factor needed to produce an unbiased estimate. The resulting scale factor and the matrix inverse that was calculated for the uplink is then reused for the downlink to form a computationally efficient precoding scheme with superior performance compared to zero-forcing (ZF) precoding. Performance analysis is provided and confirmed through simulation results.

5G and Beyond Communications↗
DOE OSTI2022

Single Carrier Modulation Resource Allocation for Massive MIMO with Virtual Antennas

Today’s Massive MIMO cellular operation is dominated by orthogonal frequency division multiplexing (OFDM) modulation. One of the advantages of OFDM is the flexibility to carve up the available spectrum into resource blocks (RBs) that can operate adjacent to one another. Massive MIMO adds spatial multiplexing layers on top of the RBs, enabling the simultaneous operation of dozens of UEs. Cyclic prefixed single carrier modulation (CP-SCM) is an alternative to OFDM that also benefits from massive MIMO and is useful as an OFDM alternative in specific scenarios. However, until recently, no resource allocation method has been proposed for CP-SCM. In this paper, we present a CP-SCM resource allocation scheme using virtual antennas in a massive MIMO time domain duplexed scenario. By creating several virtual antennas for each physical antenna, the benefits of massive MIMO are achieved with a smaller physical antenna count. Resources are quantized into data streams, and each user can be assigned a variable number of simultaneous streams. This paper presents a detailed development and analysis of multi-stream processing (MSP) for both uplink detection and downlink precoding. We also introduce heterogeneous MSP, where CP-SCM and OFDM signals can be processed in the same MSP framework.

5G and beyond communications↗
DOE OSTI2024

Redox Gating for Colossal Carrier Modulation and Unique Phase Control

Redox gating, a novel approach distinct from conventional electrolyte gating, combines reversible redox functionalities with common ionic electrolyte moieties to engineer charge transport, enabling power-efficient electronic phase control. This study achieves a colossal sheet carrier density modulation beyond 10 16 cm -2 , sustainable over thousands of cycles, all within the sub-volt regime for functional oxide thin films. The key advantage of this method lies in the controlled injection of a large quantity of carriers from the electrolyte into the channel material without the deleterious effects associated with traditional electrolyte gating processes such as the production of ionic defects or intercalated species. The redox gating approach offers a simple and practical means of decoupling electrical and structural phase transitions, enabling the isostructural metal-insulator transition and improved device endurance. The versatility of redox gating extends across multiple materials, irrespective of their crystallinity, crystallographic orientation, or carrier type (n- or p-type). This inclusivity encompasses functional heterostructures and low-dimensional quantum materials composed of sustainable elements, highlighting the broad applicability and potential of the technique in electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Charge Carriers Modulate the Bonding of Semiconductor Nanoparticle Dopants As Revealed by Time-Resolved X-ray Spectroscopy

Understanding the electronic structure of doped semiconductors is essential to realize advancements in electronics and in the rational design of nanoscale devices. Here, we report the results of time-resolved X-ray absorption studies on copper-doped cadmium sulfide nanoparticles that provide an explicit description of the electronic dynamics of the dopants. The interaction of a dopant ion and an excess charge carrier is unambiguously observed via monitoring the oxidation state. The experimental data combined with DFT calculations demonstrate that dopant bonding to the host matrix is modulated by its interaction with charge carriers. Additionally, the transient photoluminescence and the kinetics of dopant oxidation reveal the presence of two types of surface-bound ions that create mid-gap states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Laterally Modulating Carrier Concentration by Ion Irradiation in CdO Thin Films for Mid‐IR Plasmonics

This report demonstrates tunable carrier densities in CdO thin films through local ion irradiation, providing lateral control of mid‐IR optical properties. Ion‐solid interactions produce donor‐like defects that boost electron concentrations from the practical minimum of 2.5 × 10 19 cm −3 to a maximum of 2.5 × 10 20 cm −3 by metered ion exposure. This range is achieved using He, N, Ar, or Au ions at 1–2.8 MeV; when normalized by displacements per atom, all ion species produce comparable results. Since CdO is well‐described by the Drude model, irradiation‐tuned carrier densities directly alter the infrared dielectric function, and in turn, mid‐infrared optical properties. Further, it is demonstrated that by combining irradiation with traditional lithography, CdO films expose to ions in the presence of 3‐µm thick, patterned photoresist exhibit lateral carrier density profiles with ≈400‐nm resolution. Scanning near‐field optical microscopy reveals sharp optical interfaces with almost no companion contrast in surface morphology, microstructure, or crystallinity. Finally, CdO lateral homostructures supporting surface plasmon polaritons (SPPs) are demonstrated whose dispersion relation can be tuned through periodic patterning in a monolithic platform by simple nanofabrication. Numerical simulations show these polaritons result from strong coupling between excitations at CdO plasma frequencies and SPPs supported by the platinum substrate.

cadmium oxide↗
DOE OSTI2019

Modulating Carrier Transport via Defect Engineering in Solar Water Splitting Devices

Developing sustainable solar water splitting devices requires efficient separation and transport of photogenerated carriers. In this Perspective, we examine carrier transport in semiconductor photoelectrodes using bismuth vanadate as a primary model system and highlight strategies to significantly improve carrier delivery through defect engineering. To improve electron transport in low-mobility semiconductors, we introduce two distinct bulk doping methods, by homogeneously enhancing the bulk defect level or by forming distributed homojunctions with graded doping. Next, we demonstrate the use of structural boundaries as extrinsic pathways for fast electron transport, thus providing novel insights to engineer materials’ macroscopic conductivity. Third, we describe the importance of interface design in terms of structural, chemical, and electronic matching at the back contact to suppress carrier recombination. Lastly, we highlight the methods for surface defect control via passivation and catalysis and give a brief outlook of research challenges and opportunities for solar water splitting.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Transient electron scavengers modulate carrier density at a polar/nonpolar perovskite oxide heterojunction

Here, we show how transient electron scavengers can be utilized to control the carrier concentration at polar/non-polar perovskite interfaces. By combining quantitative synchrotron x-ray-based interface structure determination with ab initio modeling, we demonstrate that Nd vacancy formation and the resulting formation of Nd adatoms, stabilized by oxygen scavengers at the growth front, can quantitatively account for the decreased carrier concentration at the SrTiO 3 /n NdTiO 3 /SrTiO 3 (001) heterojunction for n = 1 unit cell. This study yields new insights into growth mechanisms and the effect of transient species and defects on the electronic properties of oxide heterojunctions.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Carrier Mobility Modulation in Cu 2 Se Composites Using Coherent Cu 4 TiSe 4 Inclusions Leads to Enhanced Thermoelectric Performance

Carrier transport engineering in bulk semiconductors using inclusion phases often results in the deterioration of carrier mobility (μ) owing to enhanced carrier scattering at phase boundaries. Here, we show by leveraging the temperature-induced structural transition between the α-Cu 2 Se and β-Cu 2 Se polymorphs that the incorporation of Cu 4 TiSe 4 inclusions within the Cu 2 Se matrix results in a gradual large drop in the carrier mobility at temperatures below 400 K (α-Cu 2 Se), whereas the carrier mobility remains unchanged at higher temperatures, where the β-Cu 2 Se polymorph dominates. The sharp discrepancy in the electronic transport within the α-Cu 2 Se and β-Cu 2 Se matrices is associated with the formation of incoherent α-Cu 2 Se/Cu 4 TiSe 4 interfaces, owing to the difference in their atomic structures and lattice parameters, which results in enhanced carrier scattering. In contrast, the similarity of the Se sublattices between β-Cu 2 Se and Cu 4 TiSe 4 gives rise to coherent phase boundaries and good band alignment, which promote carrier transport across the interfaces. Interestingly, the different cation arrangements in Cu 4 TiSe 4 and β-Cu 2 Se contribute to enhanced phonon scattering at the interfaces, which leads to a reduction in the lattice thermal conductivity. The large reduction in the total thermal conductivity while preserving the high power factor of β-Cu 2 Se in the (1–x)Cu 2 Se/(x)Cu 4 TiSe 4 composites results in an improved ZT of 1.2 at 850 K, with an average ZT of 0.84 (500–850 K) for the composite with x = 0.01. Furthermore, this work highlights the importance of structural similarity between the matrix and inclusions when designing thermoelectric materials with improved energy conversion efficiency.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Door assembly with collapsible carrier

A door assembly for a motor vehicle comprised of an outer door panel and an inner door panel interconnected to define a door panel structure having an internal door cavity. A collapsible carrier module is configured to be oriented in a collapsed arrangement to facilitate installation into the door cavity through an opening in the inner door panel. The collapsible carrier module can be moved from its collapsed arrangement into an expanded arrangement upon installation within the door cavity to facilitate subsequent mounting to the door panel structure. The collapsible carrier module includes a two-piece carrier plate formed to integrally include a pair of laterally-spaced glass run channels and a pair of laterally-spaced slider rails.

42 ENGINEERING↗
DOE OSTI2015

Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Door assembly with collapsible carrier and water shield

A door assembly for a motor vehicle comprised of an outer door panel and an inner door panel interconnected to define a door panel structure having an internal door cavity. A collapsible carrier module is configured to be oriented in a collapsed arrangement to facilitate installation into the door cavity through an opening in the inner door panel. The collapsible carrier module can be moved from its collapsed arrangement into an expanded arrangement upon installation within the door cavity to facilitate subsequent mounting to the door panel structure. The collapsible carrier module includes a barrier configured to close off the opening in the inner panel.

Fortin, Raymond Edward↗
DOE OSTI2018

Detailed carrier recombination in lateral composition modulation structure

Carrier recombination in lateral composition modulation (LCM) GaInP was probed in detail using time-resolved photoluminescence (TR-PL) and transmission electron microscopy (TEM). Upon SiO2 passivation, the time-transient decay of the PL peak was slower, and carrier lifetime was significantly enhanced from 25 to 230 ps for passivated LCM GaInP in comparison with that of bulk GaInP. This is due to the suppressed surface recombination of the irregular and wavy surface of LCM GaInP observed by TEM. Temperature-dependent TR-PL also showed a large decrease in carrier lifetime with an increase in temperature, indicating the dominance of Shockley-Read-Hall recombination due to the nonperiodicity of the LCM structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Isoelectronic tungsten doping in monolayer MoSe 2 for carrier type modulation

Doping and alloying are effective ways to engineer the band structure and modulate the optoelectronic functionality of monolayer transition metal dichalcogenides (TMDs). In this work, we explore the synthesis and electronic properties of monolayer Mo 1-x W x Se 2 (0 < x < 0.18) alloys with almost 100% alloying degree. The isoelectronic substitutional doping of tungsten for molybdenum in the monolayer MoSe 2 is shown to suppress its intrinsically n-type conduction behavior, with p-type conduction gradually emerging to become dominant with increasing W concentration in the alloys. Atomic resolution Z-contrast electron microscopy show that W is shown to substitute directly for Mo without the introduction of noticeable vacancy or interstitial defects, however with randomly-distributed W-rich regions ~2 nm in diameter. Scanning tunneling microscopy/spectroscopy measurements reveal that these W-rich regions exhibit a local band structure with the valence band maximum (VBM) closer to the Fermi level as compared with the Mo-rich regions in the monolayer Mo 1-x W x Se 2 crystal. These localized upshifts of the VBM in the local band structure appear responsible for the overall p-type behavior observed for the monolayer Mo 1-x W x Se 2 crystals. Stacked monolayers of n-type MoSe 2 and p-type Mo 1-x W x Se 2 were demonstrated to form atomically thin, vertically stacked p n homojunctions with gate-tunable characteristics, which appear useful for future optoelectronic applications. Lastly, these results indicate that alloying with isoelectronic dopant atoms appears to be an effective and advantageous alternate strategy to doping or alloying with electron donors or acceptors in two-dimensional TMDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗