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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

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NASA NTRS1973

Effects of cesium ions and cesium vapor on selected ATS-F samples

Thermal control coating samples were subjected to cesium ion beam and vapor exposures. Degradation of solar absorptance and infrared emittance were measured. Solar cells and samples selected from surfaces on the ATS-F spacecraft likely to experience ion or vapor impingement were bombarded by 10-volt cesium ions. Other samples were subjected to high levels of cesium vapor. Aluminum and white paint were backsputtered by 550-volt cesium ions onto selected samples. For direct bombardment, the threshold for ion-induced property changes was above five-thousand trillion ions/sq cm. With material sputtered from a 450-sq cm target onto samples 36 cm distant, the threshold for noticeable effects was above 5 times 10 to the 17-th power ions/sq cm.

Kemp, R. F.↗

NASA NTRS1963

RESEARCH ON THE COLLISION PROBABILITIES OF ELECTRONS AND CESIUM IONS IN CESIUM VAPORS

Collision possibilities of electrons and cesium ions in cesium vapors

CESIUM PLASMA↗

NASA NTRS1962

RESEARCH ON THE COLLISION PROBABILITIES OF ELECTRONS AND CESIUM IONS IN CESIUM VAPOR

Collision cross sections of ions and electrons in cesium vapor

ELECTRON↗

NASA NTRS1963

IN-FLIGHT GENERATION OF FUEL FOR CESIUM ION ENGINES - THE CESIUM HYDRIDE SYSTEM

Thermal decomposition of cesium hydride for in- flight fuel generation for a cesium ion engine

IONIC PROPULSION↗

DOE OSTI2013

Steady State Sputtering Yield and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 16 and 30 keV Gallium or 16 keV Cesium Ions.

Depleted uranium that included carbide precipitates was sputtered with 30keV gallium ions or 16kev cesium ions to depths much greater than the ions’ range, i.e. using steady state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the corresponding ion fluences were used to determine the steady state target sputtering yields of both uranium and uranium carbide. 6.3 and 6.02 atoms of uranium versus 2.4 and 1.45 units of uranium carbide were sputtered per gallium ion at 30 kV and 16 kV, respectively. 9.9 uranium atoms and 3.65 units of uranium carbide sputtered per cesium ion at 16 kV. The measured steady state sputtering coefficients for Ga at 30 keV and Cs at 16 keV are close to, but smaller than calculated sputtering coefficients for pure uranium. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U86Ga14, (UC) 70 Ga 30 and U 86 Ga 14 , (UC) 59 Ga 41 for Ga at 30keV and 16keV, respectively, and U 81 Cs 9 , (UC) 78 Cs 22 for Cesium at 16 keV,

36 MATERIALS SCIENCE↗

DOE OSTI2014

Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1962