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We present new CMOS photodiode imager pixel with ultra-low read noise through on-chip suppression of reset noise via column-based feedback circuitry. The noise reduction is achieved without introducing any image lag, and with insignificant reduction in quantum efficiency and full well.
The Skipper-in-CMOS image sensor integrates the nondestructive readout capability of skipper charge coupled devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode (PPD) in a CMOS imaging process while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a ${15} \times {15}~\mu $ m2 pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor’s commercial 180-nm CMOS image sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep subelectron noise of $0.15\text {e}^ - $ , demonstrating the charge transfer operation from the PPD and the single photon counting operation when the sensor is exposed to light. This article also discusses new testing strategies employed for its operation and characterization.
As the switching speeds and densities of Digital CMOS integrated circuits continue to increase, output switching noise becomes more of a problem. A design technique which aids in the reduction of switching noise is reported. The output driver stage is analyzed through the use of an equivalent RLC circuit. The results of the analysis are used in the design of an output driver stage. A test circuit based on these techniques is being submitted to MOSIS for fabrication.
This paper describes ongoing research and development of CMOS active pixel image sensors for low cost commercial applications. A number of sensor designs have been fabricated and tested in both p-well and n-well technologies. Major elements in the development of the sensor include on-chip analog signal processing circuits for the reduction of fixed pattern noise, on-chip timing and control circuits and on-chip analog-to-digital conversion (ADC). Recent results and continuing efforts in these areas will be presented.
A single chip camera which includes an .[.intergrated.]. .Iadd.integrated .Iaddend.image acquisition portion and control portion and which has double sampling/noise reduction capabilities thereon. Part of the .[.intergrated.]. .Iadd.integrated .Iaddend.structure reduces the noise that is picked up during imaging.
The continuing improvement in quantum efficiency (above 90% for single visible photons), reduction in noise (below 1 electron per pixel), and shrink in pixel pitch (less than 1 μm) enable billion-pixel x-ray cameras (BiPC-X) based on commercial complementary metal–oxide–semiconductor (CMOS) imaging sensors. We describe BiPC-X designs and prototype construction based on flexible tiling of commercial CMOS imaging sensors with millions of pixels. Device models are given for direct detection of low energy x rays (<10 keV) and indirect detection of higher energies using scintillators. Modified Birks’s law is proposed for light yield non-proportionality in scintillators as a function of x-ray energy. Single x-ray sensitivity and spatial resolution have been validated experimentally using a laboratory x-ray source and the Argonne Advanced Photon Source. Possible applications include wide field-of-view or large x-ray aperture measurements in high-temperature plasmas, the state-of-the-art synchrotron, x-ray free electron laser, and pulsed power facilities.
The integration of stabilized lasers, sources that generate spectrally pure light, will provide compact, low-cost solutions for applications including quantum information sciences, precision navigation and timing, metrology, and high-capacity fiber communications. We report a significant advancement in this field, demonstrating stabilization of an integrated waveguide Brillouin laser to an integrated waveguide reference cavity, where both resonators are fabricated using the same CMOS-compatible integration platform. We demonstrate reduction of the free running Brillouin laser linewidth to a 292 Hz integral linewidth and carrier stabilization to a 4.9 × 10 –13 fractional frequency at 8 ms reaching the cavity-intrinsic thermorefractive noise limit for frequencies down to 80 Hz. We achieve this level of performance using a pair of 56.4 x 10 6 quality factor Si 3 N 4 waveguide ring-resonators that reduce the high-frequency noise by the nonlinear Brillouin process and the low-frequency noise by Pound–Drever–Hall locking to the ultra-low loss resonator. These results represent an important step toward integrated stabilized lasers with reduced sensitivity to environmental disturbances for atomic, molecular, and optical physics (AMO), quantum information processing and sensing, and other precision scientific, sensing, and communications applications.
The low noise and radiation-hard operation of the SOI Four-Gate transistor (G4-FET) is eperimentally demonstrated.
Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity, due to the direct collection of the sensor signal by the readout electronics. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detectors. In this contribution, a general perspective of the state of the art of CMOS detectors for High Energy Physics experiments is given. The main developments carried out with regard to these devices in the framework of the CERN RD50 collaboration are summarized.
The world s first silicon-based complementary metal oxide/semiconductor (CMOS) integrated-circuit voltage-controlled oscillator (VCO) operating in a frequency range around 324 GHz has been built and tested. Concomitantly, equipment for measuring the performance of this oscillator has been built and tested. These accomplishments are intermediate steps in a continuing effort to develop low-power-consumption, low-phase-noise, electronically tunable signal generators as local oscillators for heterodyne receivers in submillimeter-wavelength (frequency > 300 GHz) scientific instruments and imaging systems. Submillimeter-wavelength imaging systems are of special interest for military and law-enforcement use because they could, potentially, be used to detect weapons hidden behind clothing and other opaque dielectric materials. In comparison with prior submillimeter- wavelength signal generators, CMOS VCOs offer significant potential advantages, including great reductions in power consumption, mass, size, and complexity. In addition, there is potential for on-chip integration of CMOS VCOs with other CMOS integrated circuitry, including phase-lock loops, analog- to-digital converters, and advanced microprocessors.
The present volume on IR readout electronics discusses cryogenic readout using silicon devices, cryogenic readout using III-V and LTS devices, multiplexers for higher temperatures, and focal-plane signal processing electronics. Attention is given to the optimization of cryogenic CMOS processes for sub-10-K applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure device technology for ultracold readout applications, and a three-terminal semiconductor-superconductor transimpedance amplifier. Topics addressed include unfulfilled needs in IR astronomy focal-plane readout electronics, IR readout integrated circuit technology for tactical missile systems, and radiation-hardened 10-bit A/D for FPA signal processing. Also discussed are the implementation of a noise reduction circuit for spaceflight IR spectrometers, a real-time processor for staring receivers, and a fiber-optic link design for INMOS transputers.
Block codes have trellis structures and decoders amenable to high speed CMOS VLSI implementation. For a given CMOS technology, these structures enable operating speeds higher than those achievable using convolutional codes for only modest reductions in coding gain. As a result, block codes have tremendous potential for satellite trunk and other future high-speed communication applications. This paper describes a new approach for implementation of the synchronization function for block codes. The approach utilizes the output of the Viterbi decoder and therefore employs the strength of the decoder. Its operation requires no knowledge of the signal-to-noise ratio of the received signal, has a simple implementation, adds no overhead to the transmitted data, and has been shown to be effective in simulation for received SNR greater than 2 dB.
GeSn is a group-IV alloy with immense potential to advance microelectronics technology due to its intrinsic compatibility with existing Si CMOS processes. With a sufficiently high Sn composition, GeSn is classified as a direct bandgap semiconductor. Polycrystalline GeSn holds several additional advantages, including its significantly lower synthesis cost compared to its epitaxial counterpart, as well as the versatility to grow these films on a variety of substrates. Here, in this work, we present a polycrystalline thin-film GeSn phototransistor on a fused silica substrate with a Sn composition of ~10%, showing a photoresponse in the short-wave infrared wavelength range, critical for emerging sensing applications. This device shows a gate-tunable response, with responsivities approaching up to 1.7 mA/W with only a 30 nm-thick GeSn layer. Furthermore, phototransistors offer additional adaptability through gating, which allows for the reduction of dark current. This not only enhances the signal-to-noise ratio but also offers more flexible integration with various image sensor readout implementations using different substrates. The specific detectivity of this phototransistor is within an order of magnitude of those of previously reported GeSn photodetectors grown by molecular beam epitaxy and chemical vapor deposition, even though the absorber is 3 to 20× thinner while the electrode spacing for photocarrier transport is approximately 15× longer than the carrier diffusion length in this work, showing great potential benefits of extending similar device structures to epitaxial GeSn layers. As these GeSn phototransistors utilize a noncrystalline substrate, our work establishes a fundamentally more versatile path toward monolithically integrated GeSn-based photodetectors for next-generation multimodal sensors.
Topics covered include: Multi-Segment Radius Measurement Using an Absolute Distance Meter Through a Null Assembly; Fiber-Optic Magnetic-Field-Strength Measurement System for Lightning Detection; Photocatalytic Active Radiation Measurements and Use; Computer Generated Hologram System for Wavefront Measurement System Calibration; Non-Contact Thermal Properties Measurement with Low-Power Laser and IR Camera System; SpaceCube 2.0: An Advanced Hybrid Onboard Data Processor; CMOS Imager Has Better Cross-Talk and Full-Well Performance; High-Performance Wireless Telemetry; Telemetry-Based Ranging; JWST Wavefront Control Toolbox; Java Image I/O for VICAR, PDS, and ISIS; X-Band Acquisition Aid Software; Antimicrobial-Coated Granules for Disinfecting Water; Range 7 Scanner Integration with PaR Robot Scanning System; Methods of Antimicrobial Coating of Diverse Materials; High-Operating-Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength; A Model of Reduced Kinetics for Alkane Oxidation Using Constituents and Species for N-Heptane; Thermally Conductive Tape Based on Carbon Nanotube Arrays; Two Catalysts for Selective Oxidation of Contaminant Gases; Nanoscale Metal Oxide Semiconductors for Gas Sensing; Lightweight, Ultra-High-Temperature, CMC-Lined Carbon/Carbon Structures; Sample Acquisition and Handling System from a Remote Platform; Improved Rare-Earth Emitter Hollow Cathode; High-Temperature Smart Structures for Engine Noise Reduction and Performance Enhancement; Cryogenic Scan Mechanism for Fourier Transform Spectrometer; Piezoelectric Rotary Tube Motor; Thermoelectric Energy Conversion Technology for High-Altitude Airships; Combustor Computations for CO2-Neutral Aviation; Use of Dynamic Distortion to Predict and Alleviate Loss of Control; Cycle Time Reduction in Trapped Mercury Ion Atomic Frequency Standards; and A (201)Hg+ Comagnetometer for (199)Hg+ Trapped Ion Space Atomic Clocks.
Laser stabilization sits at the heart of many precision scientific experiments and applications, including quantum information science, metrology, and atomic timekeeping. Many of these systems narrow the laser linewidth and stabilize the carrier by use of Pound–Drever–Hall (PDH) locking to a table-scale, ultrahigh quality factor (Q), vacuum spaced Fabry–Perot reference cavity. Integrating these cavities to bring characteristics of PDH stabilization to the chip scale is critical to reducing their size, cost, and weight, and enabling a wide range of portable and system-on-chip applications. We report a significant advance in integrated laser linewidth narrowing, stabilization, and noise reduction by use of a photonic integrated 4.0 m long coil resonator to stabilize a semiconductor laser. We achieve a 36 Hz 1 / π <#comment/> -integral linewidth, Allan deviation of 1.8 × <#comment/> 10 − <#comment/> 13 at 10 ms measurement time, and a 2.3 kHz/s drift—to the best of our knowledge, the lowest integral linewidth and highest stability demonstrated for an integrated waveguide reference cavity. This performance represents over an order of magnitude improvement in integral linewidth and frequency noise over previous integrated waveguide PDH stabilized reference cavities and bulk-optic and integrated injection locked approaches, and over two orders of magnitude improvement in frequency and phase noise than integrated injection locked approaches. Two different wavelength coil designs are demonstrated, stabilizing lasers at 1550 nm and 1319 nm. The resonator is bus-coupled to a 4.0 m long coil, with a 49 MHz free spectral range, mode volume of 1.0 × <#comment/> 10 10 µ <#comment/> m 3 , and 142 million intrinsic Q , fabricated in a CMOS compatible, ultralow loss silicon nitride waveguide platform. Our measurements and simulations show that the thermorefractive noise floor for this particular cavity is reached for frequencies down to 20 Hz in an ambient environment with simple passive vibration isolation and without vacuum or thermal isolation. The thermorefractive noise limited performance is estimated to yield an 8 Hz 1 / π <#comment/> -integral linewidth and Allan deviation of 5 × <#comment/> 10 − <#comment/> 14 at 10 ms, opening a stability regime that heretofore has been available only in fundamentally non-integrated systems. These results demonstrate the potential to bring the characteristics of laboratory-scale stabilized lasers to the integrated, wafer-scale compatible chip scale, and are of interest for a number of applications in quantum technologies and atomic, molecular, and optical physics, and with further developments below 10 Hz linewidth, can be highly relevant to ultralow noise microwave generation.
High-resolution transmission electron microscopy (HRTEM) is crucial for observing material’s structural and morphological evolution at Angstrom scales, but the electron beam can alter these processes. Devices such as CMOS-based direct-electron detectors operating in electron-counting mode can be utilized to substantially reduce the electron dosage. However, the resulting images often lead to a low signal-to-noise ratio, which requires frame integration that sacrifices temporal resolution. Several machine learning (ML) models have been recently developed to successfully denoise HRTEM images. Yet, these models are often computationally expensive, and their inference speeds on GPUs are outpaced by the imaging speed of advanced detectors, precluding in situ analysis. Furthermore, the performance of these denoising models on datasets with imaging conditions that deviate from the training datasets has not been evaluated. To mitigate these gaps, we propose a new self-supervised ML denoising pipeline specifically designed for time-series HRTEM images. This pipeline integrates a blind-spot convolution neural network with pre-processing and post-processing steps, including drift correction and low-pass filtering. Results demonstrate that our model outperforms various other ML and non-ML denoising methods in noise reduction and contrast enhancement, leading to improved visual clarity of atomic features. Additionally, the model is drastically faster than U-Net-based ML models and demonstrates excellent out-of-distribution generalization. The model’s computational inference speed is in the order of milliseconds per image, rendering it suitable for application in in-situ HRTEM experiments.
The Scintillating Bubble Chamber (SBC) collaboration purchased 32 Hamamatsu VUV4 silicon photomultipliers (SiPMs) for use in SBC-LAr10, a bubble chamber containing 10 kg of liquid argon. A dark-count characterization technique, which avoids the use of a single-photon source, was used at two temperatures to measure the VUV4 SiPMs breakdown voltage (V BD ), the SiPM gain (g SiPM ), the rate of change of g SiPM with respect to voltage (m), the dark count rate (DCR), and the probability of a correlated avalanche (P CA ) as well as the temperature coefficients of these parameters. A Peltier-based chilled vacuum chamber was developed at Queen's University to cool down the Quads to 233.15 ± 0.2 K and 255.15 ± 0.2 K with average stability of ±20 mK. An analysis framework was developed to estimate V BD to tens of mV precision and DCR close to Poissonian error. The temperature dependence of V BD was found to be 56 ± 2 mV K -1 , and m on average across all Quads was found to be (459 ± 3(stat.)±23(sys.))× 10 3 e- PE -1 V -1 . The average DCR temperature coefficient was estimated to be 0.099 ± 0.008 K -1 corresponding to a reduction factor of 7 for every 20 K drop in temperature. The average temperature dependence of P CA was estimated to be 4000 ± 1000 ppm K -1 . P CA estimated from the average across all SiPMs is a better estimator than the P CA calculated from individual SiPMs, for all of the other parameters, the opposite is true. All the estimated parameters were measured to the precision required for SBC-LAr10, and the Quads will be used in conditions to optimize the signal-to-noise ratio.
In recent years, Spread-Spectrum Code Division Multiple Access (CDMA) has become a very popular access scheme for mobile communications due to a variety of reasons: excellent performance in multipath environments, high scope for frequency reuse, graceful degradation near saturation, etc. In this way, a CDMA system can support simultaneous digital communication among a large community of relatively uncoordinated users sharing a given frequency band. Nevertheless, there are also important problems associated with the use of CDMA. First, in a conventional CDMA scheme, the signature sequences of asynchronous users are not orthogonal and, as the number of active users increases, the self-noise generated by the mutual interference between users considerably degrades the performance, particularly in the return link. Furthermore, when there is a large disparity in received powers - due to differences in slant range or atmospheric attenuation - the non-zero cross-correlation between the signals gives rise to the so-called near-far problem. This leads to an inefficient utilization of the satellite resources and, consequently, to a drastic reduction in capacity. Several techniques were proposed to overcome this problem, such as Synchronized CDMA - in which the signature sequences of the different users are quasi-orthogonal - and power control. At the expense of increased network complexity and user coordination, these techniques enable the system capacity to be restored by equitably sharing the satellite resources among the users. An alternative solution is presented based upon the use of time-reference adaptive digital beamforming on board the satellite. This technique enables a high number of independently steered beams to be generated from a single phased array antenna, which automatically track the desired user signal and null the unwanted interference source. In order to use a time-reference adaptive antenna in a communications system, the main challenge is to obtain a reference signal highly correlated with the desired user signal and uncorrelated with the interferences. CDMA lends itself very easily to the generation of such a reference signal, thanks to the a priori knowledge of the user's signature sequence. First, the integration of an adaptive antenna in an asynchronous CDMA system is analyzed. The adaptive antenna system can provide increased interference rejection - much higher than that afforded by the code alone - and, since CDMA is mainly interference limited, any reduction in interference converts directly and linearly into an increase in capacity. Analyses and computer simulations are presented that show how an asynchronous CDMA system incorporating adaptive beamforming can provide at least as much capacity as a synchronous system. More importantly, the proposed concept allows the near-far effect to be mitigated without requiring a tight coordination of the users in terms of transmitted power control or network synchronization. The system is extremely robust to the near-far effect because the signals reaching the satellite from directions other than that of the desired user - which are likely to have different power levels - are adaptively canceled by the antenna. Finally, a payload architecture is presented that illustrates the practical implementation of this concept. This digital payload architecture demonstrates that with the advent of high performance CMOS digital processing, the on-board implementation of complex DSP techniques - in particular Digital Beamforming - has become possible, being most attractive for Mobile Satellite Communications.