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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Modeling and Feedback Compensator Design for Power-Hardware-in-the-Loop System for Medium-Voltage Grid-Connected Power Converters

Hardware-in-the-loop (HIL) evaluation is a method in which the test subject is split into a physical part and a simulated part, and these parts are connected with interfaces to form a combined physical-numerical system. Power-hardware-in-the-loop (PHIL) systems, where actual hardware is connected to a real-time model, can exhibit issues of instability, inaccuracy and errors when operating in a closed-loop. The challenges of generating a PHIL setup are that, first, because of the limited dynamic response of the different parts of the system, the test results might be inaccurate, and, second, because of the high frequency noise introduced by the sensors to the closed-loop system, it can be difficult to design a compensator for the real-time emulator response, while stabilizing the closed-loop system at the same time. In this paper, different parts of a PHIL system are characterized, and the feedback compensator system design is proposed for the stable operation of the closed-loop PHIL system. The issues as observed in a PHIL system without any compensator are demonstrated using experimental results, and the effectiveness of a first order phase lead compensator is validated.

compensator design↗

Genetic compensation of triacylglycerol biosynthesis in the green microalga Chlamydomonas reinhardtii

Genetic compensation has been proposed to explain phenotypic differences between gene knockouts and knockdowns in several metazoan and plant model systems. With the rapid development of reverse genetic tools such as CRISPR/Cas9 and RNAi in microalgae, it is increasingly important to assess whether genetic compensation affects the phenotype of engineered algal mutants. While exploring triacylglycerol (TAG) biosynthesis pathways in the model alga Chlamydomonas reinhardtii, it was discovered that knockout of certain genes catalyzing rate-limiting steps of TAG biosynthesis, type-2 diacylglycerol acyltransferase genes (DGTTs), triggered genetic compensation under abiotic stress conditions. Genetic compensation of a DGTT1 null mutation by a related PDAT gene was observed regardless of the strain background or mutagenesis approach, for example, CRISPR/Cas 9 or insertional mutagenesis. However, no compensation was found in the PDAT knockout mutant. The effect of PDAT knockout was evaluated in a Δvtc1 mutant, in which PDAT was upregulated under stress, resulting in a 90% increase in TAG content. Knockout of PDAT in the Δvtc1 background induced a 12.8-fold upregulation of DGTT1 and a 272.3% increase in TAG content in Δvtc1/pdat1 cells, while remaining viable. These data suggest that genetic compensation contributes to the genetic robustness of microalgal TAG biosynthetic pathways, maintaining lipid and redox homeostasis in the knockout mutants under abiotic stress. This work demonstrates examples of genetic compensation in microalgae, implies the physiological relevance of genetic compensation in TAG biosynthesis under stress, and provides guidance for future genetic engineering and mutant characterization efforts.

09 BIOMASS FUELS↗

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

Self-compensation in Ge- and Si-doped Al 0.3 Ga 0.7 N has been investigated in terms of the formation of III vacancy and donor-vacancy complexes. Both Ge- and Si-doped AlGaN layers showed a compensation knee behavior with impurity compensation (low doping regime), compensation plateau (medium doping regime), and self-compensation (high doping regime). A maximum free carrier concentration of 4–5 × 10 19 cm –3 was obtained by Ge doping, whereas Si doping resulted in only half of that value, ~2 × 10 19 cm –3 . A DFT calculation with the grand canonical thermodynamics model was developed to support the hypothesis that the difference in self-compensation arises from the difference in the formation energies of the V III -n•donor complexes relative to their onsite configurations. The model suggested that the V III -2•donor and V III -3•donor complexes were responsible for self-compensation for both Ge- and Si-doped AlGaN. However, a lower free carrier concentration in Si-doped samples was due to a high V III -3•Si concentration, resulting from a lower energy of formation of V III -3•Si.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Compensation of Anisotropy in Spin Hall Devices for Neuromorphic Applications

Spintronic nano-oscillators and diodes with reduced nonlinearity benefit from low phase noise and improved device properties. Moreover, they could offer key advantages for realizing neuromorphic applications, such as spike-based neurons and frequency multiplexing in neural networks. Here, in this work, we experimentally demonstrate the reduction in nonlinearity of a spin Hall nano-oscillator (SHNO) by compensation of its effective magnetic anisotropy. The study involves optimization of Co/Ni multilayer growth to achieve the compensation, followed by spin-diode measurements on patterned microstrips to quantify their anisotropy. The relationship between the second- (H k 2 = 0.47 mT) and first-order ($H^{eff}_{k_1}$ = -0.8 mT) anisotropy fields reveals the existence of an easy cone, thereby validating the presence of compensation. Furthermore, we demonstrate a compensated spin diode that has a fixed frequency when the input power is varied. We then study the current-induced auto-oscillation properties of SHNOs on compensated films by patterning nanoconstrictions of 200 and 100 nm wide. The invariance of the resonance frequency and linewidth of the compensated SHNO with applied dc current indicates the absence of nonlinearity. This independence is maintained irrespective of the applied external fields and their orientations. The compensated SHNO obtained has a linewidth of 1.1 MHz and a peak output power of up to 1 pW/MHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DC compensation for power transformer through neutral DC injection

A power transmission system can include a transformer and compensator circuit(s), each coupled between a node of the transformer and a ground connection. The compensator circuit(s) can each be configured to counteract a DC signal component of an AC signal at the transformer. The compensator circuit(s) can include a converter circuit having an AC side and a DC side and configured to convert a DC voltage on the DC side to an AC signal at the AC side. The compensator circuit(s) can include a DC link coupled to the DC side of the converter circuit. The compensator circuit(s) can include a controller configured to measure a DC signal component between the load and the ground; to determine, based at least in part on the DC signal component, a compensating signal configured to counteract the DC signal component; and to inject, by the converter circuit, the compensating signal to counteract the DC signal component.

Burkes, Klaehn W.↗

Trap-Assisted Dopant Compensation Prevents Shunting in Poly-Si Passivating Interdigitated Back Contact Silicon Solar Cells

Using a trap-assisted compensation model, we explain why polycrystalline Si (poly-Si) passivating contacts are able to achieve low leakage current between the doped fingers of interdigitated back contact (IBC) monocrystalline Si solar cells despite mixing of boron and phosphorus dopants in the isolation region. The fill factor of IBC solar cells is strongly affected by the electrical isolation region between n- and p-type fingers, as this region is critical in minimizing shunting losses. During fabrication of monocrystalline Si solar cells with poly-Si passivating contacts, the intrinsic poly-Si isolation region inevitably gets contaminated with both p- and n-type dopants. Using dopant profiles measured with time-of-flight secondary ion mass spectrometry and scanning probe measurements of the isolation region, we demonstrate that despite the dopant spreading during cell processing, a well-compensated region between the doped fingers exists that prevents shunting. The trap-assisted dopant compensation mechanism significantly widens the compensated region to tens of microns, where the residual dopant densities are below the trap density. This enables a high-resistivity region, resulting in low shunt current. Using one-dimensional (1-D) finite element diode simulations, we identify the design parameters and experimental conditions under which a sufficiently resistive region can form. Furthermore, our measurements of 2-D local resistivity and work function maps across the isolation region using scanning spreading resistance microscopy and Kelvin probe force microscopy demonstrate the existence of a highly resistive, wide compensated region and confirm our proposed compensation mechanism. For our structures, this region is ~25 µm in width within a ~150 µm wide finger isolation region with nearly 3 orders of magnitude higher resistivity than the regions dominated by a single type of dopant.

14 SOLAR ENERGY↗

Compensation Between Poleward Energy Transports in the Ocean and Atmosphere. Final report

Equator-to-pole energy transport by the ocean and atmosphere is a fundamental constraint on the Earth's climate. In his 1964 seminal paper, Jacob Bjerknes suggested that if the top-of-the atmosphere fluxes and the ocean heat storage do not vary substantially, which is a reasonable assumption on long time scales, the total energy transport by the climate system would not vary much either. This implies that any large anomalies of oceanic and atmospheric energy transports should be equal and opposite. Despite its fundamental importance in understanding the climate system, this hypothesis, the so-called Bjerknes compensation, has been tested by only a limited number of studies. The goal of our project is to investigate the degree of compensation in poleward energy transports by the atmosphere and ocean and its dependence on the time scale, latitude and background climate primarily based on a large suite of the Community Earth System Model version 1 (CESM1) simulations to test the Bjerknes compensation hypothesis. Our particular emphases are to understand: (1) robustness of the degree of the compensation across the various simulations with differing parameterizations and initial conditions, (2) the competing role of atmosphere-ocean couplings through the momentum flux and buoyancy flux in enabling or deterring the compensation, and (3) the role of compensation in the leading modes of variability in the atmosphere and ocean

54 ENVIRONMENTAL SCIENCES↗

Compensation Between Poleward Energy Transports in the Ocean and Atmosphere

The goal of our project is to investigate the degree of compensation in poleward energy transports by the atmosphere and ocean and its dependence on the time scale, latitude and background climate primarily based on a large suite of the Community Earth System Model version 1 (CESM1) simulations to test the Bjerknes compensation hypothesis. Our particular emphases are to understand: (1) robustness of the degree of the compensation across the various simulations with differing parameterizations and initial conditions, (2) the competing role of atmosphere-ocean couplings through the momentum flux and buoyancy flux in enabling or deterring the compensation, and (3) the role of compensation in the leading modes of variability in the atmosphere and ocean.

58 GEOSCIENCES↗

Oscillation Risks of Grid-Following and Grid-Forming Inverter-Based Resources in Series-Compensated Networks

Here, this paper investigates the dynamic behavior of a grid-connected inverter-based resource (IBR) when connected radially to a series compensated line. Potential interactions between the series compensation and the IBR have been identified for both types: grid-following (GFL) or grid-forming (GFM). The study begins with electromagnetic transient (EMT) simulations to demonstrate stability issues. Subsequently, nonlinear analytical models are formulated in the dq frame, validated against the EMT simulation, and leveraged to assess eigenvalues and participation factors. Influencing factors of the dominant oscillation modes have been identified. The analysis results show that series compensation may make a mode associated with the synchronization unit unstable. Furthermore, customized feedback systems are built for the synchronizing loop. Series compensation can increase the sensitivity of the voltage phase angle towards the synchronizing angle, and introduce phase lag in the real power response towards the synchronizing angle. These factors may cause interactions with the phase-locked loop in GFL-IBR systems and with power-based synchronization in GFM-IBR systems, potentially leading to instability.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Refining the two-band model for highly compensated semimetals using thermoelectric coefficients

In studying compensated semimetals, the two-band model has proven extremely useful in capturing electrical conductivity under magnetic field, as a function of density and mobility of electronlike and holelike carriers. However, it rarely offers practical insight into magnetothermoelectric properties. Here, in this work, we report the field dependence of thermoelectric (TE) coefficients in a highly compensated semimetal NbSb 2 , where we find the Seebeck (𝑆 𝑥⁢𝑥 ) and Nernst (𝑆 𝑥⁢𝑦 ) coefficients increase quadratically and linearly with applied magnetic field, respectively. Such field dependence was predicted in previous work that studied a system of two parabolic bands, within semiclassical Boltzmann transport theory when the following two conditions are simultaneously met: 𝜔 𝑐 ⁢𝜏 ≫ 1 and tan ⁡𝜃 𝐻 ≪ 1, where 𝜔 𝑐 and 𝜏 refer to the cyclotron frequency and relaxation time, respectively, and 𝜃 𝐻 is the Hall angle. Under these conditions, we find the field dependence of the TE coefficients directly provides a relation between the electronlike (𝑛 𝑒 ) and holelike (𝑛 ℎ ) carrier densities, which in turn can be used to refine two-band model fitting. With this, we find the compensation factor ($\frac{|Δ⁢𝑛|}{𝑛_{𝑒}}$, where Δ⁢𝑛 = 𝑛 𝑒 −𝑛 ℎ ) of NbSb 2 is two orders of magnitude smaller than what was found in unrestricted fitting, resulting in a larger saturation-field scale for magnetoresistance. Within the same framework of the semiclassical theory, we also deduce that the thermoelectric Hall angle tan⁡ 𝜃 𝛾 = $\frac{𝑆_{𝑥⁢𝑦}}{𝑆_{𝑥⁢𝑥}}$ can be expressed as ($\frac{Δ⁢𝑛}{𝑛_{𝑒}}$ ×𝜔 𝑐 ⁢𝜏) −1 , which serves as a parameter to predict the degree of compensation. Our findings offer crucial insights into identifying empirical conditions for field-induced enhancement of TE performance and into engineering-efficient thermoelectric devices based on semimetallic materials.

electrical conductivity↗

Thermal transport in compensated semimetals: Effect of electron-electron scattering on Lorenz ratio

It is well known that the electronic thermal conductivity of clean compensated semimetals can be greatly enhanced over the electric conductivity by the availability of an ambipolar mechanism of conduction, whereby electrons and holes flow in the same direction experiencing negligible Coulomb scattering as well as negligible impurity scattering. This enhancement—resulting in a breakdown of the Wiedemann-Franz law with an anomalously large Lorenz ratio—has been recently observed in two-dimensional monolayer and bilayer graphene near the charge neutrality point. In contrast to this, three-dimensional compensated semimetals such as WP 2 and Sb are typically found to show a reduced Lorenz ratio. Here, we investigate the reasons for this difference, focusing on the low-temperature regime where the electron-electron scattering is expected to dominate over other scattering mechanisms. We show that the different regimes of Fermi statistics (nondegenerate electron-hole liquid in graphene versus degenerate electron-hole liquid in compensated semimetals) are not sufficient to explain the reduction of the Lorenz ratio in the latter. We propose that the solution of the puzzle lies in the large separation of electron and hole pockets in momentum space, which allows compensated semimetals to sustain sizable regions of electron-hole accumulation near the contacts. These accumulations suppress the ambipolar conduction mechanism and effectively split the system into two independent electron and hole conductors. We present a quantitative theory of the crossover from ambipolar to unipolar conduction as a function of the size of the electron-hole accumulation regions, and show that it naturally leads to a sample-size-dependent thermal conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Compensated Contacts for Three-Terminal Transistor Solar Cells

The heterojunction bipolar transistor solar cell (HBTSC) is an alternative to conventional double-junction solar cells that combines the advantages of three-terminal architectures with a compact design. A critical part of the HBTSC fabrication is the implementation of the middle contact, the one associated to the base layer in the transistor structure, because this layer can be damaged by the diffusion of metallic species during contact annealing. As a solution we propose to implement a "compensated contact", that is, to leave a thin (< 200 nm) portion of emitter or collector between the base layer and the contact metals and compensate its doping during contact annealing. Using an Au/Zn/Au metal structure to compensate a 150 nm thick portion of the collector, we obtain a specific contact resistance ~8 10-4 ..omega.. cm2. This value is fairly invariant for annealing temperatures between 400 and 460 degrees C and annealing times between 2 and 5 minutes, and it does not improve by adding Pd to the metallic stack. Optimizing the compensated contact technology opens the path to the realization of III-V-material-based HBTSCs with open-circuit voltages and fill factors comparable to those of conventional multijunction architectures.

contact resistance↗

Giant coercivity and enhanced intrinsic anomalous Hall effect at vanishing magnetization in a compensated kagome ferrimagnet

Ferrimagnets that can be driven to magnetic compensation show promise for use in spintronics as they exhibit a finite anomalous Hall effect at zero magnetic field without having a substantial magnetic moment. Compensated ferrimagnet spintronic devices with both a large anomalous Hall effect and a high coercivity would be simultaneously easy to read and difficult to erase. The kagome ferrimagnet TbMn 6 Sn 6 has been reported to host a large intrinsic anomalous Hall effect. Here, we demonstrate that doping the Mn sites with Cr drives the system toward magnetic compensation. For nearly compensated compositions at low temperatures, giant coercive fields exceeding 14 T are observed. Additionally, Cr doping markedly enhances the intrinsic anomalous Hall effect, which can be attributed to a shift in the Fermi level. Our results extend the range of unique magnetic states observed in kagome materials, demonstrating that chemical doping is an effective strategy to tune and realize these states.

DeStefano, Jonathan M. [Univ. of Washington, Seatt↗

Compensating attenuation effects in full-waveform inversion with dissipation-dispersion decoupling

Seismic attenuation poses challenges to velocity model building from acoustic/elastic full-waveform inversion (FWI). In particular, when constructing the FWI gradient for velocity inversion, recent studies have indicated that the high-attenuation structure could distort the gradient by damping the amplitudes and shifting the kinematic phases, resulting in an imbalanced update and thus unreliable velocity model. These Q effects are particularly significant in the reflection acquisition geometry due to the “double-damping” issue. Here, we develop a Q-compensated FWI algorithm for constructing a Q-free FWI gradient. By using a recently developed viscoacoustic wave propagator, this compensation can be done conveniently by keeping the dispersion term and flipping the dissipation term in the wave equation when we simulate the forward and time-reversed adjoint wavefields. The resultant gradient obtained by interacting these two wavefields has correct kinematics and Q-free amplitudes. This Q-compensated FWI can balance the update between Q- and no- Q-areas, which we determine using synthetic examples. In addition, we illustrate how to take advantage of the dissipation-dispersion decoupling to determine the anomalous Q value in the Q model building workflow via Q-compensated reverse time migration.

Geochemistry & Geophysics↗

Compensation of Third-order Resonances in the High Intensity Regime

As the Fermilab Accelerator Complex enters the high-intensity era, the Recycler Ring (RR) needs to mitigate the detrimental effect of third-order resonance crossing. Third-order resonance lines can be compensated to first order by cancelling out the global Resonance Driving Terms (RDTs) using the response matrix method. This compensation scheme has been proven to work at low intensities, i.e., in the single-particle regime. In order to evaluate the effectiveness of this compensation scheme at higher intensities, this study looks at dynamic and static tune scans, with and without resonance compensation, and different space charge tune shifts. Special care was taken in order to disentangle effects from space charge tune shift, structure resonances and space charge driven resonances.

43 PARTICLE ACCELERATORS↗

Alternative solenoid compensation scheme for the FCC-ee interaction region

We present the optics design of the solenoid compensation scheme at the FCC-ee. The 2T solenoids from the experiments induce coupling on the beams, generating an increase on vertical emittance. This compensation scheme minimizes emittance growth, with a final value of approximately 5% of the nominal. A screening solenoid is placed around the Final Focus Quadrupoles to protect them from the experiment’s field. A skew quadrupole component is added to the Final Doublet, aligning the magnet axis to the rotated reference frame of the beam. Two anti-solenoids placed approximately ±20 m from the IP are used to cancel the field integral. The vertical orbit generated by the horizontal crossing angle in the detector field is compensated by vertical correctors placed right after the beam pipe separation and next to the final focus quadrupoles. We describe the IR optics in this scheme, including the detector solenoid and the magnetic elements used for compensation.

43 PARTICLE ACCELERATORS↗

Precise micromotion compensation of a tilted ion chain

Excess micromotion can be a substantial source of errors in trapped-ion based quantum processors and clocks due to the sensitivity of the internal states of the ion to external fields and motion. This problem can be fixed by compensating background electric fields in order to position ions at the RF node and minimize their driven micromotion. Here we describe techniques for compensating ion chains in scalable surface ion traps. These traps are capable of cancelling stray electric fields with fine spatial resolution in order to compensate multiple closely spaced ions due to their large number of relatively small control electrodes. We demonstrate a technique that compensates an ion chain to better than 5 V/m and within 0.1 degrees of chain rotation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗