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Results for “CONTACT RESISTANCE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Investigations in the tape-to-tape contact resistance and contact composition in superconducting CORC ® wires

Conductor on Round Core (CORC®) wires and cables, constructed from multiple layers of helically wound REBa 2 Cu 3 O 7–δ tapes, are a promising cable technology for high field magnet applications. An important feature of high-temperature superconductor cables is the ability to share current between conductors, allowing current to bypass drops in I c and minimizing the risk of hot spot formation, which could lead to potential burnout in the superconductor. In contrast to stacked-tape cables, which have continuous contact between tapes, in CORC® the transfer points occur at discrete tape crossovers. The tape-to-tape contact resistance, R c , plays a critical role in the current sharing capabilities and current distribution in cables. For the work reported here, special CORC® wires were manufactured using different winding parameters to investigate variations in R c . Variations comprised inclusion of a lubricant, different lubricant conductivity, inclusion of pre-tinning, and heating briefly to melt the solder. Cables were first tested as straight lengths, followed by bending to a 10 cm diameter. In straight cables R c values ranged from 1 to over 1000 μΩ cm 2 , depending on cabling parameters, with the highest values being found for cables made by the present 'standard' process. Bending the cables to a 10 cm diameter decreased R c by a factor 2–5. Tinning with PbSn decreased R c by three orders of magnitude compared to standard CORC® wires, and heat treating wires with tinned conductor resulted in only a small further decrease in R c . Based on the measured R c at an electric field of 1 μV cm –1 the resulting current transfer length between layers can range from a few millimeters to a tens of centimeters. Examination of contacts with a laser confocal microscope showed plastic deformation of the copper at the edges of the contact overlap area, apparently caused by thicker plating at tape edges digging into the copper of neighboring layers. These images reveal that only a fraction of the total contact surface may actually be touching when there is nothing to compensate for height differential. Images of the PbSn coated tapes indicated that application of solder produces a much more uniform contact surface and higher contact area. Furthermore, imaging of CORC® cross-sections confirmed that in the non-tinned cables there are many regions where tapes are not in contact, while in contrast the PbSn cable shows significantly more contact between the tapes. These different imaging techniques reveal that tape surface morphology is a significant parameter in determining R c .

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

Low Resistance Contact to P-Type Monolayer WSe 2

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, with their atomically thin thickness, hold great promise for future electronic devices. One challenge to achieving high-performance 2D semiconductor field effect transistors (FET) is the high contact resistance at the metal-semiconductor interface. Here, in this study, we develop a charge-transfer doping strategy with WSe 2 /α-RuCl 3 heterostructures to achieve low-resistance ohmic contact for p-type monolayer WSe2 transistors. We show that hole doping as high as 3 × 10 13 cm -2 can be achieved in the WSe 2 /α-RuCl 3 heterostructure due to its type-III band alignment, resulting in an ohmic contact with resistance of 4 kΩ μm. Based on that, we demonstrate p-type WSe 2 transistors with an on-current of 35 μA·μm -1 and an I ON /I OFF ratio exceeding 10 9 at room temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A New Method for the Evaluation of Majority and Minority Carrier Contact Resistivity of Polysilicon on Oxide Contacts

In this contribution we present a novel technique for characterizing the majority and minority carrier contact resistivity in polysilicon on oxide passivating contacts. Traditionally, contact resistivity is measured through the Transfer Length Method (TLM). This method presents difficulties when measuring the minority carrier contact due to the presence of a blocking diode which prevents current flow between the pads. Our novel method is performed by creating a unipolar device which has the same contact on both sides (either symmetric n-type or symmetric p-type) and metalizing the device with a grid on one side, and a full metal contact on the back (the same pattern that will be used in a final cell). We then measure the resistance across the device at increasing illumination. Since the resistivity of the wafer is a function of carrier density, when increasing illumination, the wafer resistivity decreases. We can then fit modeling equations to the measured resistivity and extrapolate the fit to infinite illumination where only the contact resistivity is measured to accurately measure both the minority and majority carrier contact resistivity.

current measurement↗
DOE OSTI2022

Phosphorus replenishment to improve the contact resistivity of light-induced Al contacts on Si solar cells

A method to repair laser-induced phosphorus loss from the n-type emitter of Si solar cells during light-induced Al plating is demonstrated. The ability to add a water-reactive phosphorus compound, PCl 5 , into the Al plating bath gives a unique advantage to Al over Cu for front contacts on Si solar cells. The contact resistivity between light-induced Al and Si emitter is reduced to as low as 0.1 mΩ-cm 2 . Cyclic voltammetry performed on a plating bath composed of 81 wt% 1-ethyl-3-methylimidazolium tetrachloroaluminate, 19 wt% AlCl 3 , and 0.2 wt% PCl 5 reveals multiple reduction reactions of PCl 5 , although incomplete decomposition of PCl 5 is possible. A decrease in nucleation loop size during cyclic voltammetry is also observed suggesting that PCl 5 , while being consumed, modifies the growth mechanism during Al plating. Structural analysis confirms that the addition of PCl 5 produces an Al film which is levelized and compact. Here, a pulsed voltage profile coupled with chemical analysis verifies that phosphorus incorporation is electrolytically activated and is likely the cause for the low contact resistivity.

14 SOLAR ENERGY↗
DOE OSTI2022

Analytical modeling and simulation of electrical contact resistance for elastic rough electrode surface contact including frictional temperature rise

An improved electrical contact resistance (ECR) model for elastic rough electrode contact is proposed, incorporating the effects of asperity interactions and temperature rise by frictional and joule heating. The analytical simulation results show that the ECR decreases steeply at the beginning of the contact between Al and Cu. However, it becomes stabilized after reaching a specific contact force. It is also found that the longer elapsed sliding contact time, the higher ECR due to the increase in electrical resistivity of electrode materials by the frictional temperature rise at the interface. The effects of surface roughness parameters on ECR are studied through the 3 2 full-factorial design-of-experiment analysis. Based on the two representative roughness parameters, i.e., root-mean-square (rms) roughness and asperity radius, their individual and coupled effects on the saturated ECR are examined. The saturated ECR increases with the rms roughness for a rough machined surface condition, but it is hardly affected by the asperity radius. On the other hand, the saturated ECR increases with both the rms roughness and the asperity radius under a smooth thin film surface condition.

42 ENGINEERING↗
DOE OSTI2021

Noncured Graphene Thermal Interface Materials for High-Power Electronics: Minimizing the Thermal Contact Resistance

We report on experimental investigation of thermal contact resistance, RC, of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness, Sq. It is found that the thermal contact resistance depends on the graphene loading, ξ, non-monotonically, achieving its minimum at the loading fraction of ξ ~15 wt%. Decreasing the surface roughness by Sq~1 μm results in approximately the factor of ×2 decrease in the thermal contact resistance for this graphene loading. The obtained dependences of the thermal conductivity, KTIM, thermal contact resistance, RC, and the total thermal resistance of the thermal interface material layer on ξ and Sq can be utilized for optimization of the loading fraction of graphene for specific materials and roughness of the connecting surfaces. Our results are important for the thermal management of high-power-density electronics implemented with diamond and other wide-band-gap semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Li-Ion Battery Electrode Contact Resistance Estimation by Mechanical Peel Test

Li-ion battery electrode electronic properties, including bulk conductivity and contact resistance, are critical parameters affecting cell performance and fast-charge capability. Contact resistance between the coating and current collector is often the largest electronic resistance in an electrode and is affected by chemical, microstructural, and interfacial variations. Direct measurements of contact resistance and bulk conductivity have proven to be challenging. In their absence, a mechanical electrode peel test is often used to compare adhesion and electrical contact resistance. However, using a micro-flexible-surface probe, contact resistance can be directly determined. Here, this work compares contact resistance and mechanical peel strength of multiple commercial-grade HE5050 and NCM523 cathodes and graphite and silicon anodes. It was found that peel strength correlates well with contact resistance in a carefully curated data set (p < 0.05) and in some situations may be a good metric to estimate electrical properties. However, there were distinct outliers in the data set, indicating that peel strength may not accurately reflect electrical properties when there is significant variation in electrode composition. These results illustrate the value of the micro-flexible-surface probe in quantifying contact resistance and bulk conductivity to better understand how battery composition and processing steps affect microstructure and resulting cell performance.

25 ENERGY STORAGE↗
DOE OSTI2025

Measurement of Contact Resistivity In Symmetric Polycrystalline Si/SiO x /Monocrystalline Si Test Structures Using Variable Light Illumination

While different methods exist to determine the contact resistivity in semiconductor devices, these methods are limited to measurement of the majority carrier contacts. The measurement of p‐ or n‐type contacts on n‐ or p‐type crystalline silicon, respectively, is challenging due to the blocking diode formed by the p–n junction. In this article, we address this problem for tunneling oxide passivating contacts used in high‐efficiency Si solar cells. We propose a universal method to extract contact resistivity on symmetric test structures with polycrystalline silicon on SiO x (poly‐Si/SiO x ) passivating contacts under illumination, both for p–n and high–low‐junction passivated contacts. In this method, we demonstrate that the total contact resistance of each cell grid finger to the base wafer is governed by its effective contact area, defined by the transfer length extending from both sides of the finger. Therefore, the grid contact resistance of a poly‐Si contact depends on the ratio of the doped poly‐Si sheet resistance to the tunneling contact resistivity.

14 SOLAR ENERGY↗
DOE OSTI2024

An experimental study to investigate magnetic field and winding force-dependent contact resistance of NI REBCO coil

Abstract This paper reports the magnetic field and winding force-dependent contact resistance, also known as characteristic resistance, of no-insulation (NI) REBCO coil. Three NI coils were wound with different winding forces ( < 1 kgf, 3 kgf, and 5 kgf) using the same REBCO-coated conductor, and they were tested at 4.2 K in a background field of 0, 5, 10, and 14 T. The contact resistance of each coil is measured at each field. As a result of the measurements, we draw two conclusions. First, a quadratic function for magnetic field intensity reasonably reproduces the measurement results of each NI test coil’s magnetic field-dependent contact resistance, where the practical fit function’s coefficients are determined depending on the winding force. Second, the contact resistance of each coil is partially inconsistent with the magnetoresistance of the electroplated material, i.e. copper, of the REBCO-coated conductor. This paper will present the measurement results in detail, discuss them with Kohler’s rule, and formulate the contact resistance using winding force and magnetic field terms.

Bang, Jeseok (ORCID:0000000247616334)↗
DOE OSTI2021

Extraction of intrinsic contact resistance in organic thin-film transistors with single channel length and high capacitance density

Accurate characterization of the intrinsic contact resistance is important for the optimization of organic thin-film transistors (OTFTs), especially in devices with high gate capacitance density. This study reports on a method for the extraction of the intrinsic, or gate-voltage independent, contact resistance from OTFTs. In contrast to the transfer length method (TLM), this method can be applied to devices with a single geometry. The method is an extension of the previously reported Y-function method and combines the model proposed by S. Luan et al. to analyze the effect of the gate voltage on the contact resistance. Here, this method is first applied to OTFTs with a bottom-gate top-contact geometry having varying gate capacitance density values. The intrinsic contact resistance is found to decrease with increased gate capacitance density with values ranging between 4 kΩcm and under 1 kΩcm when the gate capacitance is changed from 36.6 nF/cm 2 to 231.7 nF/cm 2 , respectively. These values are in good agreement with those obtained using TLM experiments. The new method is also shown to be applicable to OTFTs with top-gate bottom contact geometry.

36 MATERIALS SCIENCE↗
DOE OSTI2020

AC loss and contact resistance in REBCO CORC ® , Roebel, and stacked tape cables

Abstract Many high-temperature superconductor (HTS) applications require superconducting cables with high currents while operating in an alternating magnetic field. HTS cables should be composed of numerous superconducting tapes to achieve the required current capacity. Alternating current and magnetic fields cause AC losses in such cables and can provoke conductor instability. AC losses and contact resistances were measured of several cable designs based on commercially available REBCO tapes at the University of Twente. The AC loss was measured under identical conditions for eight REBCO conductors manufactured according to three types of cabling methods—CORC ® (Conductor on Round Core), Roebel, and stacked tape, including a full-size REBCO CICC (cable in conduit conductor). The measurements were done at T = 4.2 K without transport current in a sinusoidal AC magnetic field of 0.4 T amplitude and frequencies from 5 to 55 mHz. The AC loss was measured simultaneously by calibrated gas flow calorimeter utilizing the helium boil-off method and by the magnetization method using pick-up coils. Also, the AC loss of two CORC® conductors and a Roebel cable was measured at 77 K. Each conductor was measured with and without background field of 1 T. The measured AC coupling loss in the CORC ® and Roebel conductors is negligible at 4.2 K for the applied conditions while at 77 K coupling loss was observed for all conductors. The absence of coupling loss at 4.2 K can be explained by shielding of the conductor interior; this is confirmed with measurement and calculation of the penetration field of CORC ® and Roebel cables. The inter-tape contact resistance was measured for CORC ® and stacked tape samples at 4.2 and 77 K. It was demonstrated that a short heat treatment of CORC ® conductor with solder-coated tapes activates tape-to-tape soldering and decreases the contact resistance. The reduction of contact resistance by two orders in magnitude to tens of nΩm is comparable with the interstrand contact resistance in ITER Nb 3 Sn type conductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

An electric-circuit model on the inter-tape contact resistance and current sharing for REBCO cable and magnet applications

REBCO coated conductor has demonstrated high current capacity that can enable high-field magnets for high energy physics and fusion applications. However, quench protection is still one of the main challenges to be addressed for these applications. In addition, Ic and n value variations along the length of REBCO tapes exist in commercial production. The inter-tape contact resistance plays a key role to develop the self protection capability in cables and magnets by enabling current sharing and suppressing excessive eddy currents. Here we propose an electric-circuit model to describe the inter-tape contact resistance and its impact on the current sharing between REBCO tapes. We report the experiments on a 2-stacked tape REBCO cable with local Ic drop to validate the model. With the developed model, we study the upper limit of the contact resistance which allows current sharing between tapes. We also study the impact of variation in Ic and n values in tapes on the cable performance. Finally, our model is expected to provide useful insight into the current sharing and target values for inter-tape contact resistance in REBCO cables and magnets for various applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs |, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs |, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×

36 MATERIALS SCIENCE↗
DOE OSTI2021

Evaluation of Contact Resistance and Fin Effectiveness of Enhanced, Brazed "Dogbone" Fin and Serpentine Tube Heat Exchangers for Air Conditioning and Heat Pump Applications

The energy consumption due to air conditioning is projected to increase by 1.3 and 4.5 times by 2050 compared to 2010 for members and non-members of the Organization of Economic Coordination and Development (OECD), respectively. Greenhouse Gas (GHG) emissions must be carefully managed to minimize their hazardous contribution to climate change. Air conditioners (AC) and heat pumps (HP) contribute with direct GHG emissions through systemic refrigerant leakage, which consequently degrades the system’s performance and therefore increases its indirect GHG emissions as well. To address this issue, the goals of new systems include minimizing leakage risk, using low global warming potential (GWP) refrigerants such as natural refrigerants, and increasing system efficiency. This paper presents part of the efforts in the development of a brazed “dogbone” fin to continuous serpentine tube heat exchanger (HX) for AC/HP applications. The main advantages of such technology are: 1) The potential to reduce 90% or more of the tube return-bends brazed joints compared to conventional tube-fin heat exchangers, thus minimizing leakage vulnerability, enabling the use of natural refrigerants like Propane and Ammonia that carry other concerning risks of flammability and toxicity ; and 2) The brazed fin to the tube joints should yield very low contact resistance. In order to quantify and estimate the impacts of contact resistance and fin effectiveness, a numerical-experimental study is investigated. The novel enhanced brazed “dog-bone” fin is compared to an equivalent pressure expanded fin. The results showed that the expanded fin has consistently greater effective heat transfer but greater contact resistance as well. Furthermore, the brazed fins have up to 20% lower pressure drop. The trade-off comparison shows that the thermal-hydraulic ratio between the two fins is equivalent for air velocities below 2m/s; for greater velocities, however, the expanded fin is favored since it has less fin efficiency penalty. For HVAC&R applications, the air velocities are typically low which makes the proposed technology competitive and a viable option in the pursuit of refrigerant leakage reduction.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2022

Contact Resistance of Carbon–Li x (Ni,Mn,Co)O 2 Interfaces

Abstract Electronic resistance in lithium‐ion battery positive electrodes is typically attributed to the bulk resistance of the active material and the network resistance of the carbon additive. Expected overpotentials from these bulk components are minimal relative to that from charge‐transfer resistance. However, literature reports show that cell overpotentials are often much more sensitive to conductive additives than the expected level from bulk or percolating‐network transport. This discrepancy motivated a detailed examination of the contact resistance between the active material and conductive additive. The contact and bulk resistances are simultaneously measured using dense bar samples of lithium‐layered oxides (Li x Ni 1 /3 Mn 1/3 Co 1/3 O 2 and Li x Ni 0.5 Mn 0.3 Co 0.2 O 2 ) in contact with carbon black. It is found that the contact resistance dominates the overall electronic resistance when the length scale is smaller than millimeters; after correcting for contact effects, bulk conductivity of layered oxides is determined to be orders‐of‐magnitude higher than previously reported. In porous electrodes, it is found from three‐electrode electrochemical impedance spectroscopy that the carbon content most heavily influences the low‐frequency regime (≈0.01 Hz), as opposed to the high frequency (>10 3 Hz) regime expected from electronic percolating properties. Constriction effects within the layered oxide are identified as the dominant mechanism for contact resistance and its implication is investigated for porous electrodes.

Kuo, Jimmy Jiahong↗
DOE OSTI2023

Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer

Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition metal dichalcogenides provide an ideal material platform, but the device performances such as the contact resistance, on/off ratio and mobility are often limited by the presence of interfacial residues caused by transfer procedures. Here, we show an ideal residue-free transfer approach using polypropylene carbonate with a negligible residue coverage of ~0.08% for monolayer MoS 2 at the centimetre scale. By incorporating a bismuth semimetal contact with an atomically clean monolayer MoS 2 field-effect transistor on hexagonal boron nitride substrate, we obtain an ultralow Ohmic contact resistance of ~78 Ω µm, approaching the quantum limit, and a record-high on/off ratio of ~10 11 at 15 K. Further, such an ultra-clean fabrication approach could be the ideal platform for high-performance electrical devices using large-area semiconducting transition metal dichalcogenides.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Tape-in-tape-out (TITO): a new approach for in-situ contact resistance measurements in high temperature superconducting CORC® cables

One of the ongoing development challenges with ReBCO high-temperature superconducting (HTS) cables is normal zone initiation and local heating, which is associated with over-critical current flowing through and around local performance reductions in individual tapes. Although inter-tape contact resistances are well-reported for individual tapes and HTS cables, these measurements are a challenge in CORC® cables as current percolates through much of the cable. In this work, developments in tape-in-tape-out (TITO) automated individual tape powering experiments are presented, and a simplified modeling approach for current percolation in CORC® cables is developed. An optimization is formulated to fit the model parameters to a large set of TITO experiments on a single cable, allowing the layer-dependent inter-tape contact resistance to be extracted. Measurements are presented and discussed for a straight CORC® cable and a cable bent to a 152 mm and 76 mm radius. The approach provides both quantitative insight and facilitates better understanding of current sharing phenomena in HTS cables.

Teyber, Reed↗