Proton radiation effects on carrier transport in diamond radiation detectors
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99 GENERAL AND MISCELLANEOUS↗
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Investigation of the Selectivity of Carrier Transport Layers in Wide-Bandgap Perovskite Solar Cells
Excellent contact passivation and selectivity are prerequisites to realize the full potential of high-material-quality perovskite solar cells, first to maximize the internal voltage (or quasi-Fermi-level separation) iV within the absorber, then to translate this high internal voltage into a high external voltage V. Experimental quantification of contact passivation and selectivity is, thus, key to improving device performance. Here, open-circuit measurements of iV oc and V oc , combined with surface photovoltage measurements, are used to systematically quantify the passivation—using iVoc as a metric—and the selectivity—defined as Soc=V oc /iV oc —of a range of common carrier transport layers to wide-bandgap (1.67 eV) perovskite absorbers. The resulting solar cells suffer from large voltage deficits, particularly when NiO x is used as the hole transport layer, even though it provides better passivation than its polymer-based counterparts (PTAA and PTAA/PFN). This indicates a poor selectivity of NiO x (Soc<0.81 for NiO x -based devices), whereas devices using polymer-based hole transport layers exhibit high selectivity (S oc =0.94–0.95). In agreement with recent reports, this low selectivity is attributed to the formation of an interlayer of non-perovskite material with high resistance to holes at the perovskite/NiO x interface. These measurements also imply that the selectivity of the C60-based electron transport layers is relatively good.
carrier transport layers↗
Unveiling the ambipolar carrier transport property of SnO 2–X for multiple-functional interlayers in perovskite solar cells
Tin oxides are the most promising electron transport layers in perovskite solar cells. An ambipolar carrier transport property has been recently demonstrated which enables a simple interconnection structure for all-perovskite tandem solar cells. However, the underlying mechanism for its ambipolar behavior is unclear which cannot be explained by the intrinsic defects in SnO 2-x . Here by using density functional theory calculations, we unveil the origin of the ambipolar carrier transport of non-stoichiometry SnO 2-x with a structure of SnO embedded in SnO 2 matrix. The hybridization of O 2p and Sn 5s orbitals of SnO introduces mid-gap states in the bandgap of SnO 2 , enabling hole transport property for SnO 2-x when x is > 0.2. Increasing the percentage of SnO in SnO 2-x significantly enhances the hole transport capability of SnO 2-x due to the enlarged Sn-O-Sn angles that increases orbital overlapping between O and Sn atoms, thus providing strategies for the further tuning of the carrier transport properties of SnO 2-x by compositional and structural designs.
14 SOLAR ENERGY↗
Measurement of carrier transport and recombination parameter in heavily doped silicon
The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.
Swanson, Richard M.↗
Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination
Rapid interwell carrier transport is a key process for a uniform carrier distribution and reduced Auger recombination in multiple quantum well (MQW) light emitting devices. In this work, the interwell transport has been studied by time-resolved photoluminescence in In 0.12 Ga 0.88 N MQWs with In x Ga 1–x N (x = 0 - 0.06) and Al 0.065 Ga 0.935 N barriers. Only for the InGaN barriers the transport is efficient. Furthermore, introduction of In into the barriers is accompanied by an increase of the nonradiative recombination at QW interfaces. Still, even with the increased Shockley–Read–Hall recombination, structures with InGaN barriers might be advantageous for high power devices because of the reduced Auger recombination.
36 MATERIALS SCIENCE↗
Field-dependent carrier transport in implanted isolation region of GaN lateral power devices
Among GaN lateral power devices, with proper E-field management, the breakdown occurs in the device isolation region rather than the active region. In this paper, we investigate field-dependent carrier transport in the isolation structures. Isolation test structures with variations in buffer doping, un-intentionally doped (UID) GaN thickness, and implantation conditions were fabricated. Electrical characterization was performed over a wide range of voltage and temperature. With varying UID GaN thickness and buffer doping, the leakage current and breakdown characteristics remain the same for a specific implantation condition, indicating that the leakage conduction and breakdown are governed by the implanted GaN region. Analysis of the temperature-dependent I–V reveals that carrier transport in the implanted GaN can be well explained by hopping conduction, involving three distinctive regions of operation depending on the E-field. At low E-field, carrier transport is ohmic, consistent with variable range hopping, driven by thermal activation. At medium E-field, a field enhanced thermally activated hopping is observed, following σ ∼ σ(T)exp(E). At high E-field, activation-less hopping is visible, following σ ∼ exp(−1/E), which occurs above a critical E-field limited by localization length.
Sadek, Mansura (ORCID:0000000322588338)↗
Benign ferroelastic twin boundaries in halide perovskites for charge carrier transport and recombination
Abstract Grain boundaries have been established to impact charge transport, recombination and thus the power conversion efficiency of metal halide perovskite thin film solar cells. As a special category of grain boundaries, ferroelastic twin boundaries have been recently discovered to exist in both CH 3 NH 3 PbI 3 thin films and single crystals. However, their impact on the carrier transport and recombination in perovskites remains unexplored. Here, using the scanning photocurrent microscopy, we find that twin boundaries have negligible influence on the carrier transport across them. Photoluminescence (PL) imaging and the spatial-resolved PL intensity and lifetime scanning confirm the electronically benign nature of the twin boundaries, in striking contrast to regular grain boundaries which block the carrier transport and behave as the non-radiative recombination centers. Finally, the twin-boundary areas are found still easier to degrade than grain interior.
14 SOLAR ENERGY↗
Energy Models for One-Carrier Transport in Semiconductor Devices
Moment models of carrier transport, derived from the Boltzmann equation, made possible the simulation of certain key effects through such realistic assumptions as energy dependent mobility functions. This type of global dependence permits the observation of velocity overshoot in the vicinity of device junctions, not discerned via classical drift-diffusion models, which are primarily local in nature. It was found that a critical role is played in the hydrodynamic model by the heat conduction term. When ignored, the overshoot is inappropriately damped. When the standard choice of the Wiedemann-Franz law is made for the conductivity, spurious overshoot is observed. Agreement with Monte-Carlo simulation in this regime required empirical modification of this law, or nonstandard choices. Simulations of the hydrodynamic model in one and two dimensions, as well as simulations of a newly developed energy model, the RT model, are presented. The RT model, intermediate between the hydrodynamic and drift-diffusion model, was developed to eliminate the parabolic energy band and Maxwellian distribution assumptions, and to reduce the spurious overshoot with physically consistent assumptions. The algorithms employed for both models are the essentially non-oscillatory shock capturing algorithms. Some mathematical results are presented and contrasted with the highly developed state of the drift-diffusion model.
Jerome, Joseph W.↗
Direct Correlation of Charge Carrier Transport to Local Crystal Quality in Lead Halide Perovskites
Although solution processing methods provide an attractive route toward development of low-cost functional materials, these accessible fabrication approaches can engender high concentrations of microscopic structural defects that are detrimental to performance. In lead halide perovskites, structural disorder derived from solution processing has been implicated as an important determiner of photophysical properties. However, a direct correlation between the functional properties of these materials and the local crystal structure in which non-equilibrium states evolve has remained elusive, in part because structural heterogeneities occur on length scales that defy conventional characterization techniques. To address this knowledge gap, in this work we have combined ultrafast pump–probe microscopy and electron backscattering diffraction to directly correlate charge carrier transport with the local diffraction pattern contrast, an indicator of crystal quality. Spatial correlation of these measurements strongly suggests that even on individual single crystal CsPbBr3 domains, microscopic variability in the crystal quality profoundly impacts the efficiency of charge carrier transport.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers
We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Numerical algorithms developed for carrier transport in nanoelectronic devices: recursive green functions, NEGF, and multiple sequential scattering
Quantitative simulations of carrier transport in physical systems that are of the size of a few nanometers require the use of quantum mechanical models at a very fundamental level.
quantum dots alloy tight binding↗
Scale-Free Networks and Commercial Air Carrier Transportation in the United States
Network science, or the art of describing system structure, may be useful for the analysis and control of large, complex systems. For example, networks exhibiting scale-free structure have been found to be particularly well suited to deal with environmental uncertainty and large demand growth. The National Airspace System may be, at least in part, a scalable network. In fact, the hub-and-spoke structure of the commercial segment of the NAS is an often-cited example of an existing scale-free network After reviewing the nature and attributes of scale-free networks, this assertion is put to the test: is commercial air carrier transportation in the United States well explained by this model? If so, are the positive attributes of these networks, e.g. those of efficiency, flexibility and robustness, fully realized, or could we effect substantial improvement? This paper first outlines attributes of various network types, then looks more closely at the common carrier air transportation network from perspectives of the traveler, the airlines, and Air Traffic Control (ATC). Network models are applied within each paradigm, including discussion of implied strengths and weaknesses of each model. Finally, known limitations of scalable networks are discussed. With an eye towards NAS operations, utilizing the strengths and avoiding the weaknesses of scale-free networks are addressed.
Conway, Sheila R.↗
Charge carrier transport in thin conjugated polymer films: influence of morphology and polymer/substrate interactions
The performance of conjugated polymer (CP)-based electronic devices relies on optimal charge carrier mobilities, which are determined by monomeric architecture, degree of polymerization, chain conformation, and the nano- and mesoscale morphologies. With regard to the latter, we discuss two effects that have received limited attention in the literature, yet important for device performance optimization: (1) the role of morphological disorder and of CP/substrate interactions on the in-plane and out-of-plane carrier transport in CPs; (2) the impact of morphological disorder on charge transfer at the CP/substrate interface. The emergence of film thickness-dependent carrier mobilities, varying over two orders of magnitude within a length scale of 200 nm, and band-bending phenomena, extending tens of nanometers within the CP, are associated with these effects. These findings suggest areas for further research in order to enable widespread applications of next-generation CP-based devices.
36 MATERIALS SCIENCE↗
Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface
This paper presents the results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contacts. Polysilicon contacts were deposited and heat treated at different conditions. The electrical properties were measured using p-n junction test structures that are much more sensitive to the contact properties than are bipolar transistors. A simple phenomenological model was used to correlate the structural properties with electrical measurements. Possible transport mechanisms are examined and estimates are made about upper bounds on transport parameters in the principal regions of the devices. The main conclusion of this study is that the minority-carrier transport in the polycrystalline silicon is dominated by a highly disordered layer at the polysilicon-monosilicon interface characterized by very low minority-carrier mobility. The effective recombination velocity at the n(+) polysilicon-n(+) monosilicon interface was found to be a strong function of fabrication conditions. The results indicate that the recombination velocity can be much smaller than 10,000 cm/s.
Neugroschel, A.↗
Influence of Hot Carrier Transport on the Transient Response of an InGaAs/InAlAs Metal-Semiconductor Schottky Diode Structure
The calculated transient characteristic of a heterostructure, rectifying contact is theoretically examined. It is found that hot carrier transport drastically affects the output terminal characteristics of the heterostructure Schottky contact and, hence, the working of a blocking contact. This is of importance to the understanding of InGaAs MSM devices in particular, as well as any structure which contains a blocking contact in general.
Salem, Ali F.↗
Barriers to carrier transport in multiple quantum well nitride-based c -plane green light emitting diodes
The presence of alloy disorder in III-nitride materials has been demonstrated to play a significant role in device performance through effects such as carrier localization and carrier transport. Relative to blue light emitting diodes (LEDs), these effects become more severe at green wavelengths. Because of the potential fluctuations that arise due to alloy disorder, full three-dimensional (3D) simulations are necessary to accurately relate materials properties to device performance. We demonstrate experimentally and through simulation that increased quantum well (QW) number in c-plane green LEDs contributes to excess driving voltage, and therefore reduced electrical efficiency. Experimentally, we grew an LED series with the number of QWs varying from one to seven and observed a systematic increase in voltage with the addition of each QW. Trends in LED electrical properties obtained from 3D simulations, which account for the effects of random alloy fluctuations, are in agreement with experimental data. Agreement is achieved without the need for adjusting polarization parameters from their known values. Finally, from these results, we propose that the polarization induced barriers at the GaN/InGaN (lower barrier/QW) interfaces and the sequential filling of QWs both contribute significantly to the excess forward voltage in multiple QW c-plane green LEDs.
42 ENGINEERING↗
Correlated anharmonicity and dynamic disorder control carrier transport in halide perovskites
Halide pervoskites are an important class of semiconducting materials that hold great promise for optoelectronic applications. In this work we investigate the relationship between vibrational anharmonicity and dynamic disorder in this class of solids. Via a multiscale model parametrized from first-principles calculations, we demonstrate that the non-Gaussian lattice motion in halide perovskites is microscopically connected to the dynamic disorder of overlap fluctuations among electronic states. This connection allows us to rationalize the emergent differences in temperature-dependent mobilities of prototypical MAPbI 3 and MAPbBr 3 compounds across structural phase transitions, in agreement with experimental findings. In conclusion, our analysis suggests that the details of vibrational anharmonicity and dynamic disorder can complement known predictors of electronic conductivity and can provide structure-property guidelines for the tuning of carrier transport characteristics in anharmonic semiconductors.
36 MATERIALS SCIENCE↗
BEEM Characterization of Band Structure and Hot Carrier Transport in SiGe Heterostructures
The electronic Structure and Properties of SiGe are important in determining the characteristics of many new hot-carrier devices, including the heterostructure bipolar transistor.
band structurehot-carrier transport BEEM p-layer t↗