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Structural Complexity and Tuned Thermoelectric Properties of a Polymorph of the Zintl Phase Ca 2 CdSb 2 with a Non-centrosymmetric Monoclinic Structure

The Zintl phase Ca 2 CdSb 2 was found to be dimorphic. Besides the orthorhombic Ca 2 CdSb 2 (-o), here we report on the synthesis, the structural characterization, and the thermoelectric transport properties of its monoclinic form, Ca 2 CdSb 2 (-m), and its Lu-doped variant Ca 2–x Lu x CdSb 2 (x ≈ 0.02). The monoclinic structure exhibits complex structural characteristics and constitutes a new structure type with the non-centrosymmetric space group Cm (Z = 30). The electrical resistivity ρ(T) measured on single crystals of both phases portrays a transition from a semiconductor to a degenerate p-type semiconductor upon doping with Lu and with an attendant change in the Hall carrier concentration nH from 7.15 × 10 18 to 2.30 × 10 19 cm –3 at 300 K. The Seebeck coefficient S(T) of both phases are comparable and indicate a hole-dominated carrier transport mechanism with magnitudes of 133 and 116 μV/K at 600 K for Ca 2 CdSb 2 (-m) and Ca 2–x Lu x CdSb 2 , respectively. The convoluted atomic bonding with an attendant large unit cell volume of ~4365 Å 3 drives a putative low thermal conductivity in these materials resulting in a power factor PF of 1.63 μW/cm K 2 and an estimated thermoelectric figure of merit zT of ~0.5 for Ca 2–x Lu x CdSb 2 at 600 K. Furthermore, differential scanning calorimetry results reveal the stability of these phases up to about 960 K, making them candidates for moderate temperature thermoelectric materials.

36 MATERIALS SCIENCE↗

Materials Data on CdSb by Materials Project

CdSb is High Pressure Cadmuum Telluride structured and crystallizes in the orthorhombic Pmmm space group. The structure is three-dimensional. Cd2+ is bonded in a distorted rectangular see-saw-like geometry to four equivalent Sb2- atoms. All Cd–Sb bond lengths are 3.18 Å. Sb2- is bonded to four equivalent Cd2+ and four equivalent Sb2- atoms to form a mixture of distorted edge and corner-sharing SbCd4Sb4 hexagonal bipyramids. There are two shorter (3.11 Å) and two longer (3.24 Å) Sb–Sb bond lengths.

36 MATERIALS SCIENCE↗

Observation of Anomalously High Seebeck Coefficients in the Family of Zintl Phase Semiconductors Ca 10 RE CdSb 9 ( RE = Rare-Earth Metal)

This work reports the synthesis, structure and thermoelectric transport properties of the hole-dominated semiconductors with a general formula Ca 10 RECdSb 9 (RE = Y, Ce, Nd, Sm, and Lu). These materials feature unexpectedly high Seebeck coeffi-cients, up to 650 µV/K at 600 K, and electrical resistivities on the order of 1–1000 mΩ·cm, which is an indication of a degen-erate semiconducting state. For example, the Seebeck coeffi-cient observed in Ca 10 NdCdSb 9 (309 µV/K at 600 K) is accom-panied by low and metallic-like electrical resistivity (6 mΩ·cm) and a carrier concentration n = 4.68×10 20 cm –3 . The calculated power factor PF in Ca 10 NdCdSb 9 is 0.88 µW/cm·K 2 at 300 K, and calculations based on the single parabolic band model indi-cate that an optimum PF opt of 1.68 μW/cm·K 2 can be achieved at that temperature for a carrier concentration n opt = 6.62 × 10 19 cm –3 . Here, the estimated thermoelectric figure of merit zT in this material, when properly tuned is expected to surpass zT = 1 at 600 K.

36 MATERIALS SCIENCE↗

Interface atomic structures in a cadmium arsenide/III–V semiconductor heterostructure

The interface atomic structure between an epitaxial thin film of the prototype topological semimetal cadmium arsenide (Cd 3 As 2 ) and a III–V semiconductor layer is investigated using high-angle annular dark-field imaging in an aberration-corrected scanning transmission electron microscope. We find that the interface unit cell adopts a defined stoichiometry that is CdSb-like, which is achieved through the insertion of periodically arranged Cd vacancies in the terminating Cd-plane of Cd 3 As 2 . This interface stoichiometry is consistent with the Sb-termination of the III–V layer and the fact that CdSb is the thermodynamically stable phase in the Cd–Sb binary system. We find at least two distinct alignments of the film with respect to the buffer layer, which are characterized by a $\frac{1}{4}$ <100> Cd 3 As 2 shift parallel to the interface. We show that steps of half unit cell height in the III–V layer can produce these distinct interface structures.

74 ATOMIC AND MOLECULAR PHYSICS↗