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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Impacts of Non-Ideal Back Contact on Capacitance Measurements in CdTe Solar Cells

CdTe solar cells suffer from a non-ideal back contact which can strongly affect the equivalent circuit model and complicate capacitance measurements. Here, five different back contact materials are deposited on identical CdTe absorbers and their influence on capacitance measurements is characterized. A five-element equivalent circuit model is shown to represent a CdTe solar cell with a non-ideal back contact, and capacitance-frequency (C-f) measurements on each sample clearly show the influence of this contact. Capacitance-voltage (C-V) measurements on each sample show the influence of frequency on measured capacitance. In the AlGaOx/Au sample, temperature dependent C-fs show the back barrier height to be 240 meV, and ongoing measurements will give a comparison of back barrier heights for all samples. This study provides insight into the efficacy of various back contacts and highlights potential errors in the interpretation of capacitance measurements due to the presence of the back contact.

cadmium compounds↗
DOE OSTI2024

Impacts of Non-Ideal Back Contact on Capacitance Measurements in CdTe Solar Cells

CdTe solar cells suffer from a non-ideal back contact which can strongly affect the equivalent circuit model and complicate capacitance measurements. Here, five different back contact materials are deposited on identical CdTe absorbers and their influence on capacitance measurements is characterized. A five-element equivalent circuit model is shown to represent a CdTe solar cell with a non-ideal back contact, and capacitance-frequency (C-f) measurements on each sample clearly show the influence of this contact. Capacitance-voltage (C-V) measurements on each sample show the influence of frequency on measured capacitance. In the AlGaOx/Au sample, temperature dependent C-fs show the back barrier height to be 240 meV, and ongoing measurements will give a comparison of back barrier heights for all samples. This study provides insight into the efficacy of various back contacts and highlights potential errors in the interpretation of capacitance measurements due to the presence of the back contact.

14 SOLAR ENERGY↗
DOE OSTI2021

Exceeding 200 ns Lifetimes in Polycrystalline CdTe Solar Cells

CdTe photovoltaics has achieved one of the lowest levelized costs of electricity among all energy sources. However, for decades, carrier lifetimes have been inferior to those of other prevalent solar cell materials. This quality has inhibited common methods to improve solar cell efficiency such as back-surface fields, electron reflectors, or bifacial solar cells. In this work, a significant increase in carrier lifetime to values exceeding 200 ns in fully functional CdTe solar cells is demonstrated. The increased lifetime is achieved by large CdSeTe grains at the absorber/emitter interface, intragrain passivation in the absorber layer, and chemical passivation by forming nanoscale oxidized tellurium species at the transparent conducting oxide interface. The carrier lifetime is correlated to the open-circuit voltage and enables paths for back-surface manipulation and novel cell architectures to further improve CdTe photovoltaic performance.

14 SOLAR ENERGY↗
DOE OSTI2021

Electro-Optical Stability in Gallium Magnesium Zinc Oxide Layers for CdTe Solar Cells

In CdTe solar cells, the emitter electron density, bandgap, and band alignment can be tuned by adjusting alloy composition and stoichiometry in gallium magnesium zinc oxide (GMZO) layers, thereby allowing for critical front interface engineering. For example, computational modeling indicates efficiency can change from 7% to 25% by adjusting these buffer properties even with fixed CdSeTe and CdTe material properties. However, the GMZO as-deposited electro-optical properties can shift during subsequent CdTe deposition, CdCl 2 annealing, and solar cell operation. Here, we examine these changes by sputtering GMZO films on glass, and measuring the electron density before and after post-deposition treatments over a range of temperatures and different ambients. We then compare GMZO to SnO 2 and MZO. The addition of Ga to MgZnO is found to have profound effects on both the electron density and electro-optical stability that should be advantageous for CdTe solar cells.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Low-temperature and effective ex situ group V doping for efficient polycrystalline CdSeTe solar cells

CdTe solar cell technology is one of the lowest-cost methods of generating electricity in the solar industry, benefiting from fast CdTe absorber deposition, CdCl 2 treatment and Cu doping. However, Cu doping has low photovoltage and issues with instability. Doping group V elements into CdTe is therefore a promising route to address these challenges. Although high-temperature in situ group V doped CdSeTe devices have demonstrated efficiencies exceeding 20%, they face obstacles including post-deposition doping activation processes, short carrier lifetimes and low activation ratios. Here, we demonstrate low-temperature and effective ex situ group V doping for CdSeTe solar cells using group V chlorides. For AsCl 3 doped CdSeTe solar cells, the dopant activation ratio can be 5.88%, hole densities reach >2 × 10 15 cm -3 and carrier lifetime is longer than 20 ns. Thus, ex situ As doped CdSeTe solar cells show open-circuit voltages ~863 mV, compared to the highest open-circuit voltage of 852 mV for Cu doped CdSeTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2023

Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells

After a focused effort over the last decade, order-of-magnitude improvements in doping and electro-optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells. Surprisingly, this did not result in higher solar cell voltages regardless of device contacting layers, absorber grading profiles, and other changes in device architecture. From detailed evaluation of radiative emission and carrier dynamics in CdSeTe heterostructures and devices, it is shown that the complexity introduced to the absorber to achieve lifetime and passivation metrics resulted in charge carrier trapping, which now negatively affects CdSeTe absorbers.

CdTe↗
DOE OSTI2021

Mapping Current Collection in Cross Section: The Case of Copper-Doped CdTe Solar Cells

For decades, copper has been used to improve the performance of cadmium telluride thin film solar cells. However, it has also been shown to be the main cause of metastability in CdTe. Recently a low activation energy has been reported for the thermal diffusion of Cu in CdTe explaining the ease of motion that it has under moderate temperatures. The community consensus is that copper segregates to the absorber grain boundaries, where it's either beneficial or detrimental to device performance depending on its concentration. Using nanoscale X-ray micrsocopy and a two-dimensional drift-diffusion model we present a preliminary correlation between local copper distribution and electrical performance of a single-junction CdTe/CdS solar cell.

CdTe↗
DOE OSTI2021

Quantifying Bulk and Surface Recombination in CdTe Solar Cells Using Time-Resolved Terahertz Spectroscopy

Understanding the nature of recombination mechanisms is essential for higher power conversion efficiency in photovoltaic (PV) devices. Here we use a combination of time-resolved terahertz spectroscopy and numerical modeling to determine the bulk Shockley-Read-Hall lifetime and interface and back surface recombination velocities in CdTe thin film stacks. Furthermore, the measurement was facilitated by fabricating wire-grid device structures using conventional laser scribing. Evaluation of a glass/FTO/SnO2/CdS/CdTe stack treated with CdCl2 allowed separation of the CdTe absorber bulk lifetime, 1.6 ns, from the back surface recombination velocity, ~6x10 4 cm/s, and indicated that CdTe/CdS interface recombination velocity had no significant impact on carrier dynamics.

14 SOLAR ENERGY↗
DOE OSTI2020

Sputtered p-Type Cu x Zn 1– x S Back Contact to CdTe Solar Cells

As thin-film cadmium telluride (CdTe) solar cells gain prominence, one particular challenge is optimizing contacts and their interfaces to transfer charge without losses in efficiency. Back contact recombination is still significant and will prevent CdTe solar technology from reaching its full potential in device efficiency, and transparent back contacts have not been developed for bifacial solar technology or multijunction solar cells. To address these challenges, here we investigate sputtered Cu x Zn 1– x S as a p-type semi-transparent back contact material to thin-film polycrystalline CdTe solar cells at Cu concentrations x = 0.30, 0.45, and 0.60. This material is selected for its high hole conductivity (160–2120 S cm –1 ), wide optical band gap (2.25–2.75 eV), and variable ionization potential (approximately 6–7 eV) that can be aligned to that of CdTe. We report that without device optimization, CdTe solar cells with these Cu x Zn 1– x S back contacts perform as well as control cells with standard ZnTe:Cu back contacts. We observe no reduction in external quantum efficiency, low contact barrier heights of approximately 0.3 eV, and carrier lifetimes on par with those of baseline CdTe. These cells are relatively stable over one year in air, with V OC and efficiency of the x = 0.30 cell decreasing by only 1 and 3%, respectively. Using scanning electron microscopy and scanning transmission electron microscopy to investigate the Cu x Zn 1– x S/CdTe interface, we demonstrate that the Cu x Zn 1– x S layer segregates into a bilayer of Cu-Te-S and Zn-Cd-S, and thermodynamic reaction calculations support these findings. Despite its bilayer formation, the back contact still functions well. This investigation explains some of the physical mechanisms governing the device stack, inspires future work to understand interfacial chemistry and charge transfer, and elicits optimization to achieve higher-efficiency CdTe cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Comprehensive Study of Carrier Recombination in High‐Efficiency CdTe Solar Cells Using Transient Photovoltage

Cadmium telluride (CdTe) solar cells represent a commercially successful photovoltaic technology, with an annual production capacity approaching 20 GW. However, improving the open-circuit voltage (V OC ) remains challenging. This study aims to deepen the understanding of charge carrier recombination in CdTe solar cells and to explore alternative dynamical characterization methods that address the limitations found in conventionally used time-resolved photoluminescence for CdTe solar cells. Transient photovoltage and transient photocurrent techniques are utilized to investigate charge carrier dynamics under conditions resembling real-world solar cell operation. The results reveal that an effective nonradiative recombination lifetime of 580 ns dominates the charge dynamics at VOC values below 850 mV. Above this threshold, radiative recombination becomes significant, with a radiative recombination coefficient of 1.1 × 10 −9 cm 3 s −1 . Additionally, the stationary charge carrier density at 1 sun is determined to be around 1 × 10 14 cm −3 . By accurately determining both radiative and nonradiative recombination, this work provides a comprehensive understanding of carrier dynamics in high-performing CdTe devices and paves the way for improving the V OC and performance of CdTe solar cells.

CdTe solar cells↗
DOE OSTI2020

Effects of post-deposition CdCl 2 annealing on electronic properties of CdTe solar cells

The effects of post-deposition CdCl 2 annealing temperature on the electronic properties of CdTe solar cells were investigated. CdTe devices incorporate Mg doped ZnO as a buffer layer and selenization using a CdSe interlayer for reducing the buffer/absorber interface recombination and increasing solar energy absorption respectively. The post-deposition CdCl 2 annealing treatments were done under separate, inert atmospheres of nitrogen and helium across the temperature range 380 to 430 °C. Electrical characterization of devices is carried out including temperature dependent current-voltage characteristics, admittance spectroscopy, and Shockley-Read-Hall recombination analysis. Here, the best improvements in device efficiency are obtained upon annealing at temperature 410 °C. This anneal correlated with reduced back contact barrier in CdTe and reduced grain-boundary barrier height which is beneficial for enhanced charge transport.

14 SOLAR ENERGY↗
DOE OSTI2021

Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells

Bias-dependent time-resolved photoluminescence (TRPL) transients of thin CdTe solar cells were simulated with the goal of characterizing the effect of p-n junction fields on photoluminescence decays. It was found that, although bulk lifetime could be accurately determined in field-free samples, electric field effects in solar cells lead to systematic underestimation of bulk lifetime. Modulating field strength with the application of external bias was found to have a major impact, a result corroborated by experimental data. In particular, p-n junction fields effects were found to be effectively suppressed when a cell is put far into forward bias, enabling accurate measurement of bulk lifetime in p-n junction structures.

CdTe↗
DOE OSTI2023

Thermomechanical Cleave of Polycrystalline CdTe Solar Cells and its Applications: A Review

One of the primary research challenges for cadmium telluride (CdTe) solar cells is addressing its open‐circuit voltage ( V OC ) deficit. While theoretical studies and single crystal work show V OC > 1 V is possible, devices remain stubbornly low at ≈800–900 mV. As absorber opto‐electronic properties (e.g., hole density, carrier lifetime) are improved, device modeling suggests that interfaces become limiting. Because CdTe‐based devices are typically grown in the superstrate configuration, the back interface is relatively accessible for manipulation and study, while the front interface (i.e., the heterojunction region) is buried under microns of material and inaccessible. NREL has developed a novel technique to thermomechanically cleave polycrystalline CdTe device stacks directly at the front interface, enabling characterization and controlled manipulation of this important region. Herein, recent work, primarily from NREL, will be reviewed, including considerations for achieving successful delamination; key scientific discoveries about the front interface that have been enabled by this technique; and practical applications, such as flexible, low‐cost solar with high power‐to‐weight ratio.

14 SOLAR ENERGY↗
DOE OSTI2023

Water-Assisted Lift-Off Process for Flexible CdTe Solar Cells

In recent years, various lift-off methods have been developed to fabricate lightweight and flexible cadmium telluride (CdTe)-based solar cells. In this work, we report flexible cadmium sulfide (CdS)/CdTe solar cells using a water-assisted lift-off approach. Here we demonstrate that an additional cadmium chloride treatment for the CdS film is critical to improve the grain size of CdS and the post-deposited CdTe film and the electron conductivity of the CdS film. As a result, the quality of the CdS/CdTe front junction is significantly improved with reduced nonradiative recombination. Finally, our lightweight and flexible polycrystalline CdTe solar cells demonstrate a champion power conversion efficiency of 12.6%.

14 SOLAR ENERGY↗
DOE OSTI2023

Band Bending at CdTe Solar Cell Contacts: Correlating Electro‐Optical and X‐Ray Photoelectron Spectroscopy Analyses of Thin Film Solar Cells

With the semiconductor bulk properties reaching target values for highly efficient solar cells, efforts are applied to reduce losses at solar cell interfaces and contacts. Advances in understanding back contacts in thin‐film polycrystalline CdTe solar cells, a leading thin‐film PV technology, are reported. By using X‐Ray photoelectron spectroscopy, Kelvin probe spectroscopy, time‐ and energy‐resolved photoluminescence, defects at the back contact are analyzed. Densities of recombination centers and charged defects that induce near‐back‐contact band bending, both resulting in recombination losses, were estimated. Electro‐optical and surface analysis results are integrated into a device model, simulating the performance of CdSeTe/CdTe solar cells with 902 mV open circuit voltage.

14 SOLAR ENERGY↗
DOE OSTI2021

Copper iodide nanoparticles as a hole transport layer to CdTe photovoltaics: 5.5 % efficient back-illuminated bifacial CdTe solar cells

We report the role of copper iodide (CuI) nanoparticles (NPs) as a hole transport layer (HTL) in cadmium sulfide/cadmium telluride (CdS/CdTe) photovoltaics. These CuI NPs were prepared using solution processing at room temperature and used to fabricate monofacial and bifacial CdTe solar cells with different back contacts. Using CuI/Au as the back contact, the device efficiency reached to 14.8% with outstanding fill factor (FF) of 79.2%. Replacing the gold (Au) electrode with sputtered transparent indium tin oxide (ITO), a CuI/ITO back contact yielded photoconversion efficiencies (PCEs) of 11.6% and 5.5% under front and back illumination respectively. Bifacial devices (CdTe/ITO) without the CuI NP HTL have an efficiency of 7.0% and 1.0% for front and back illumination, respectively. For CuI/ITO, a current collection of 12.0 mAcm -2 was observed upon back illumination which significantly improved over an ITO-only back contact (5.0 mAcm -2 ). The PCE obtained from back illumination was enhanced when using CuI NPs as the HTL due to the reduced back barrier height, and improved back interface as determined by temperature dependent current vs. voltage characteristics and impedance spectroscopy analysis. The improvement in device performance of the bifacial configuration is a significant step forward toward realizing thin film photovoltaic modules which harvest energy incident on the rear of the module.

36 MATERIALS SCIENCE↗