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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Lateral charge transport from heavy-ion tracks in integrated circuit chips

A 256K DRAM has been used to study the lateral transport of charge (electron-hole pairs) induced by direct ionization from heavy-ion tracks in an IC. The qualitative charge transport has been simulated using a two-dimensional numerical code in cylindrical coordinates. The experimental bit-map data clearly show the manifestation of lateral charge transport in the creation of adjacent multiple-bit errors from a single heavy-ion track. The heavy-ion data further demonstrate the occurrence of multiple-bit errors from single ion tracks with sufficient stopping power. The qualitative numerical simulation results suggest that electric-field-funnel-aided (drift) collection accounts for single error generated by an ion passing through a charge-collecting junction, while multiple errors from a single ion track are due to lateral diffusion of ion-generated charge.

Zoutendyk, J. A.↗

An alternative approach to charge transport in semiconducting electrodes

The excess-carrier charge transport through the space-charge region of a semiconducting electrode is analyzed by a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material describe its transport properties. A review is presented of the flux method showing that the results for a semiconductor electrode reduce in a limiting case to those previously found by Gaertner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method the depletion layer is considered more realistically by explicitly taking into account scattering and recombination processes which occur in this region.

Thomchick, J.↗

Acoustic charge transport technology investigation for advanced development transponder

Acoustic charge transport (ACT) technology has provided a basis for a new family of analog signal processors, including a programmable transversal filter (PTF). Through monolithic integration of ACT delay lines with GaAs metal semiconductor field effect transistor (MESFET) digital memory and controllers, these devices significantly extend the performance of PTF's. This article introduces the basic operation of these devices and summarizes their present and future specifications. The production and testing of these devices indicate that this new technology is a promising one for future space applications.

Kayalar, S.↗

Yield modeling of acoustic charge transport transversal filters

This paper presents a yield model for acoustic charge transport transversal filters. This model differs from previous IC yield models in that it does not assume that individual failures of the nondestructive sensing taps necessarily cause a device failure. A redundancy in the number of taps included in the design is explained. Poisson statistics are used to describe the tap failures, weighted over a uniform defect density distribution. A representative design example is presented. The minimum number of taps needed to realize the filter is calculated, and tap weights for various numbers of redundant taps are calculated. The critical area for device failure is calculated for each level of redundancy. Yield is predicted for a range of defect densities and redundancies. To verify the model, a Monte Carlo simulation is performed on an equivalent circuit model of the device. The results of the yield model are then compared to the Monte Carlo simulation. Better than 95% agreement was obtained for the Poisson model with redundant taps ranging from 30% to 150% over the minimum.

Kenney, J. S.↗

An acoustic charge transport imager for high definition television applications

In this report we present the progress during the second six month period of the project. This includes both experimental and theoretical work on the acoustic charge transport (ACT) portion of the chip, the theoretical program modelling of both the avalanche photodiode (APD) and the charge transfer and overflow transistor and the materials growth and fabrication part of the program.

Hunt, William D.↗

Mixed-Domain Charge Transport in S-Se Alloys as a Li-S Battery Cathode Material

Lithium-sulfur batteries are emerging candidate systems for the next-generation long-range electric aircraft application owing to their potential to deliver high energy density per weight. Their cathodes are to be made primarily with sulfur, but sulfur by itself has much too low electron conductivity to serve as a useful cathode. An idea that has been suggested to overcome this bottleneck is to alloy sulfur with selenium in the hope that electron mobility, which is thought to improve charge transport at some expense of increased weight and reduced energy density. However, understanding of these alloy structures and their transport mechanism is insufficient, and electron mobility at varying degrees of selenium content is not well charted, which are critical for determining the optimum selenium content and testing whether this strategy is generally feasible. The difficulty of computationally characterizing these alloy systems is rooted in the structure. The structures of both sulfur and selenium exhibit eight-atom rings that pack together in various orientations to form their respective crystals. For one, because these crystals (and presumably their alloys as well) feature multiple polymorphs such that their structural coherence is rather unclear. Secondly, these are also relatively large systems (32 atoms per cell) with low-symmetry, which complicate computation both in terms of accuracy and efficiency. Thirdly, such semi-molecular, semi-crystalline structures lead to a combination of band-transport characteristics and hopping-transport characteristics, each of which is a domain with its own physics and set of computational, theoretical challenges. In addition, there is a general dearth of experimental transport data for sulfur-selenium alloys. In this study, we make a comprehensive attempt to tackle this problem using a wide array of first-principles methods. We generate special quasirandom structures to simulate alloy structures, and compute their first-principles Raman spectra for comparison with experimental data to ensure their structural soundness. We then proceed to use recently developed, state-of-the-art tool (AMSET) in order to efficiently compute electronic mobilities under band transport of pure sulfur, pure selenium, as well as their alloys of various compositions at a reasonable accuracy. We then sample numerous dimer configurations of nearest-neighbor eight-atom-ring-pairs and compute electronic hopping rates between them, which yields hopping mobility. A combination of these efforts lead to a general mapping of electron transport behaviors throughout the alloy range. Preliminary results show that introduction of selenium into sulfur initially damages electron mobility due to disorder but eventually improves it beyond that of pure sulfur with additional selenium content, ultimately peaking at the pure-selenium limit. Band transport dominates for holes in sulfur and electrons in selenium, but in all other cases, hopping transport is dominant. Ongoing efforts include determination of charge concentration and conductivity, as well as performing multiphysics modeling to determine the optimum selenium content for best tradeoff between conductivity and energy density for aircraft range.

Junsoo Park↗

An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates

This thesis addresses the acoustoelectric issues concerning the amplification of surface acoustic waves (SAWs) and the reflection of SAWs from slanted reflector gratings on GaAs, with application to a novel acoustic charge transport (ACT) device architecture. First a simple model of the SAWAMP was developed, which was subsequently used to define the epitaxially grown material structure necessary to provide simultaneously high resistance and high electron mobility. In addition, a segmented SAWAMP structure was explored with line widths on the order of an acoustic wavelength. This resulted in the demonstration of SAWAMPS with an order of magnitude less voltage and power requirements than previously reported devices. A two-dimensional model was developed to explain the performance of devices with charge confinement layers less then 0.5 mm, which was experimentally verified. This model was extended to predict a greatly increased gain from the addition of a ZnO overlay. These overlays were experimentally attempted, but no working devices were reported due to process incompatibilities. In addition to the SAWAMP research, the reflection of SAWs from slanted gratings on GaAs was also studied and experimentally determined reflection coefficients for both 45 deg grooves and Al stripes on GaAs have been reported for the first time. The SAWAMp and reflector gratings were combined to investigate the integrated ring oscillator for application to the proposed ACT device and design parameters for this device have been provided.

Hunt, W. D.↗

An acoustic charge transport imager for high definition television applications

The primary goal of this research is to develop a solid-state television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels/frame. This imager will offer an order of magnitude improvements in speed over CCD designs and will allow for monolithic imagers operating from the IR to UV. The technical approach of the project focuses on the development of the three basic components of the imager and their subsequent integration. The camera chip can be divided into three distinct functions: (1) image capture via an array of avalanche photodiodes (APD's); (2) charge collection, storage, and overflow control via a charge transfer transistor device (CTD); and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the optimization of each of these component devices. In addition to the development of each of the three distinct components, work towards their integration and manufacturability is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail.

Hunt, W. D.↗

An acoustic charge transport imager for high definition television applications

The primary goal of this research is to develop a solid-state high definition television (HDTV) imager chip operating at a frame rate of about 170 frames/sec at 2 Megapixels per frame. This imager offers an order of magnitude improvement in speed over CCD designs and will allow for monolithic imagers operating from the IR to the UV. The technical approach of the project focuses on the development of the three basic components of the imager and their integration. The imager chip can be divided into three distinct components: (1) image capture via an array of avalanche photodiodes (APD's), (2) charge collection, storage and overflow control via a charge transfer transistor device (CTD), and (3) charge readout via an array of acoustic charge transport (ACT) channels. The use of APD's allows for front end gain at low noise and low operating voltages while the ACT readout enables concomitant high speed and high charge transfer efficiency. Currently work is progressing towards the development of manufacturable designs for each of these component devices. In addition to the development of each of the three distinct components, work towards their integration is also progressing. The component designs are considered not only to meet individual specifications but to provide overall system level performance suitable for HDTV operation upon integration. The ultimate manufacturability and reliability of the chip constrains the design as well. The progress made during this period is described in detail in Sections 2-4.

Hunt, W. D.↗

Mixed-Domain Charge Transport in the S-Se System from First Principles

Lithium-sulfur (Li-S) batteries are emerging systems heralded for the inexpensive cathode component (in S)and higher energy density than that of typical Li-ion batteries [1–5]. For the latter reason in particular, they are drawing high levels of interest for long-range electric air-craft applications where high gravimetric energy density is of utmost importance. Unfortunately, S by itself has a much too low electrical conductivity to be useful asa stand-alone cathode material. One effort to alleviate these shortcomings is to alloy sulfur with selenium [6–13],which is expected to improve the paltry conductivity of S as Se, depending on the phase, is 10∼30 times more conductive. This, however, comes at the cost of the heavier mass of Se that works against the gravimetric energy density. The charge transport behavior in the S1−xSex alloy system, not yet fully known or understood, is necessary for one to navigate the trade-offs between conductivity and other variables such as energy density en route to ultimately determining the optimum Se content, on demand. Charting carrier mobilities and conductivities in the S-Se system throughout the compositional spectrum from first principles at a predictive level is therefore critical.

Junsoo Park↗

Transport, charge exchange and loss of energetic heavy ions in the earth's radiation belts - Applicability and limitations of theory

Computer simulations of processes which control the relative abundances of ions in the trapping regions of geospace are compared with observations from discriminating ion detectors. Energy losses due to Coulomb collisions between ions and exospheric neutrals are considered, along with charge exchange losses and internal charge exchanges. The time evolution of energetic ion fluxes of equatorially mirroring ions under radial diffusion is modelled to include geomagnetic and geoelectric fluctutations. Limits to the validity of diffusion transport theory are discussed, and the simulation is noted to contain provisions for six ionic charge states and the source effect on the radiation belt oxygen ion distributions. Comparisons are made with ion flux data gathered on Explorer 45 and ISEE-1 spacecraft and results indicate that internal charge exchanges cause the radiation belt ion charge state to be independent of source charge rate characteristics, and relative charge state distribution is independent of the radially diffusive transport rate below the charge state redistribution zone.

Spjeldvik, W. N.↗

Development of a Spectral Model Based on Charge Transport for the Swift/BAT 32K CdZnTe Detector Array

The properties of 32K CdZnTe (4 x 4 sq mm large, 2 mm thick) detectors have been studied in the pre-flight calibration of the Burst Alert Telescope (BAT) on-board the Swift Gamma-ray Burst Explorer (scheduled for launch in November 2004). In order to understand the energy response of the BAT CdZnTe array, we first quantify the mobility-lifetime (mu tau) products of carriers in individual CdZnTe detectors, which produce a position dependency in the charge induction efficiency and results in a low energy tail in the energy spectrum. Based on a new method utilizing (57)Co spectra obtained at different bias voltages, the mu tau for electrons ranges from 5.0 x 10(exp -4) to 1.0 x 10(exp -2) sq cm/V while the mu tau for holes ranges from 1.3 x 10(exp -5 to 1.8 x 10(exp -4) sq cm/V. We find that this wide distribution of mu tau products explains the large diversity in spectral shapes between CdZnTe detectors well. We also find that the variation of mu tau products can be attributed to the difference of crystal ingots or manufacturing harness. We utilize the 32K sets of extracted mu tau products to develop a spectral model of the detector. In combination with Monte Carlo simulations, we can construct a spectral model for any photon energy or any incident angle.

Sato, Goro↗

An acoustic charge transport imager for high definition television applications

This report covers: (1) invention of a new, ultra-low noise, low operating voltage APD which is expected to offer far better performance than the existing volume doped APD device; (2) performance of a comprehensive series of experiments on the acoustic and piezoelectric properties of ZnO films sputtered on GaAs which can possibly lead to a decrease in the required rf drive power for ACT devices by 15dB; (3) development of an advanced, hydrodynamic, macroscopic simulator used for evaluating the performance of ACT and CTD devices and aiding in the development of the next generation of devices; (4) experimental development of CTD devices which utilize a p-doped top barrier demonstrating charge storage capacity and low leakage currents; (5) refinements in materials growth techniques and in situ controls to lower surface defect densities to record levels as well as increase material uniformity and quality.

Hunt, William D.↗

An Acoustic Charge Transport Imager for High Definition Television

This project, over its term, included funding to a variety of companies and organizations. In addition to Georgia Tech these included Florida Atlantic University with Dr. William E. Glenn as the P.I., Kodak with Mr. Mike Richardson as the P.I. and M.I.T./Polaroid with Dr. Richard Solomon as the P.I. The focus of the work conducted by these organizations was the development of camera hardware for High Definition Television (HDTV). The focus of the research at Georgia Tech was the development of new semiconductor technology to achieve a next generation solid state imager chip that would operate at a high frame rate (I 70 frames per second), operate at low light levels (via the use of avalanche photodiodes as the detector element) and contain 2 million pixels. The actual cost required to create this new semiconductor technology was probably at least 5 or 6 times the investment made under this program and hence we fell short of achieving this rather grand goal. We did, however, produce a number of spin-off technologies as a result of our efforts. These include, among others, improved avalanche photodiode structures, significant advancement of the state of understanding of ZnO/GaAs structures and significant contributions to the analysis of general GaAs semiconductor devices and the design of Surface Acoustic Wave resonator filters for wireless communication. More of these will be described in the report. The work conducted at the partner sites resulted in the development of 4 prototype HDTV cameras. The HDTV camera developed by Kodak uses the Kodak KAI-2091M high- definition monochrome image sensor. This progressively-scanned charge-coupled device (CCD) can operate at video frame rates and has 9 gm square pixels. The photosensitive area has a 16:9 aspect ratio and is consistent with the "Common Image Format" (CIF). It features an active image area of 1928 horizontal by 1084 vertical pixels and has a 55% fill factor. The camera is designed to operate in continuous mode with an output data rate of 5MHz, which gives a maximum frame rate of 4 frames per second. The MIT/Polaroid group developed two cameras under this program. The cameras have effectively four times the current video spatial resolution and at 60 frames per second are double the normal video frame rate.

Hunt, William D.↗

Calculating Charge Transport in Semiconductors

Method, called flux method, improvement over conventional methods, easy to use, and applies in operating regime not accessible to conventional macroscopic methods. Key concept of flux method follows behavior of particle flux rather than concentration of particles. Method not subject to limitations that follow from local or infinitesimal analysis.

Byvik, C. E.↗

An Ohmic model for charge transport in a semiconductor

This analysis applies to a quasi-neutral region of uniformly doped semiconductor material. The objective is to solve for the current density in terms of the carrier density and the electric potential boundary values. It is shown that the combined effects of drift and diffusion can be calculated by assuming the current density to obey Ohm's law, but with modified electric potential boundary values.

Edmonds, Larry D.↗