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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors
Experiments were conducted to study the pathway for the prebiotic origin of amino acids from hydrogen cyanide (HCN) under the action of ionizing radiation considered as an effective source of energy on the primitive earth. The irradiations were performed in a cobalt-60 source with a dose rate of 200,000 rad/hr. Seven naturally occurring amino acids are identified among the products formed by the hydrolysis of gamma-irradiated solutions of HCN: glycine, alanine, valine, serine, threonine, aspartic acid, and glutamic acid. The identity of these amino acids is established by gas chromatography and mass spectrometry. Control experiments provided evidence that the amino acids are not the result of contamination.
The authors report on an experimental study of dose-induced changes in SEU (single-event-upset) sensitivity of CMOS static RAMs. Two time regimes were investigated following exposure of memories to cobalt-60 gamma rays: the near term, within a few hours after exposure, and the long term, after many days. Samples were irradiated both at room and at liquid nitrogen temperatures. The latter procedure was used in order to freeze in the damage state until SEU measurements could be made prior to annealing. Results show that memories damaged by dose are more sensitive to upsets by heavy ions. The induced changes are substantial: threshold linear energy transfer (LET) values decreased by as much as 46 percent and asymptotic cross sections increased by factors of two to four (unannealed samples).
Two reports discuss methods for evaluating the magnitude of electrostatic charging that occurs in spacecraft dielectric materials (in particular, polyimides) during prolonged exposure to radiation in outer space. The reports describe experiments on the electrical resistivities and charge-storage properties of polyimide specimens in a dark, evacuated environment, both before and after 5-megarad exposures to rays from cobalt-60. The experiments were designed to measure these properties not under standard conditions prescribed for testing dielectrics in air but, rather, under conditions approximating those in the intended spacecraft applications. The results of the experiments showed that the electrical resistivities of the insulations as determined under these conditions are greater, by a factor of roughly a thousand, than those determined under the standard conditions and that the gamma irradiation reduced resistivities marginally.
Experimental measurements are reported of the degradation effects of high-energy particles (heavy Br ions and electrons) and Co-60 gamma-rays on the current gain of minimum-geometry bipolar transistors made from an advanced process. The data clearly illustrate the total-ionizing-dose vs particle-fluence behavior of this bipolar transistor produced by an advanced process. In particular, bulk damage from Co-60 gamma rays in bipolar transistors (base transport factor degradation) and surface damage in bipolar transistors from ionizing radiation (emitter-efficiency degradation) have been observed. The true equivalence between various types of radiation for this process technology has been determined on the basis of damage from the log K1 intercepts.