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An Assessment of the Axial and Radial Dilation of a DPIMS Tantalum Cartridge for Space Shuttle Flight Experiments

Ground-based heat treatment tests are planned on an argon gas-filled tantalum cartridge developed as pan of a Diffusion Processes in Molten Semiconductors (DPIMS) experiment conducted on NASA's Space Shuttle. The possibility that the cartridge may creep during testing and touch the furnace walls is of real concern in this program. The present paper discusses the results of calculations performed to evaluate this possibility. Deformation mechanism maps were constructed using literature data in order to identify the creep mechanism dominant under the appropriate stresses and temperatures corresponding to the test conditions. These results showed that power-law creep was dominant when the grain size of the material exceeded 55 gm but Coble creep was the important mechanism below this value of grain size. Finite element analysis was used to analyze the heat treatment tWs assuming a furnace run away condition (which is a worst case scenario) using the appropriate creep parameters corresponding to grain sizes of 1 and 100 gm. Calculations were also conducted to simulate the effect of an initial 3 tilt of the cartridge assembly, the maximum possible tilt angle. The von Mises stress and su-ain distributions were calculated assuming that the cartridge was fixed at one end as it was heated from ambient temperature to 1823 K in 1.42 h, maintained at 1823 K for 9.5 h and then further heated to an over temperature condition of 2028 K in 0.3 h. The inelastic axial and radial displacements of the cartridge walls were evaluated by resolving the von Mises strain along the corresponding directions. These calculations reveal that the maximum axial and radial displacements are expected to be about 2.9 and 0.25 mm, respectively, for both fine and coarse-grained materials at 2028 K. It was determined that these displacements occur during heat-up to temperature and creep of the cartridge is likely to be relatively insignificant irrespective of grain size. Furthermore, with a 3' tilt of the cartridge, the deflection is increased by only 0.39 gm which is negligible. Since the gap between the furnace heating elements and the cartridge is about 7.5 mm and less than the maximum radial dilation of 0.25 mm at 2028 K, it is concluded that the cartridge is unlikely to touch the furnace walls during the experiments.

Raj, S.V.↗

Creep Behavior of Near-Stoichiometric Polycrystalline Binary NiAl

New and published constant load creep and constant engineering strain rate data on near-stoichiometric binary NiAl in the intermediate temperature range 700 to 1300 K are reviewed. Both normal and inverse primary creep curves are observed depending on stress and temperature. Other characteristics relating to creep of NiAl involving grain size, stress and temperature dependence are critically examined and discussed. At stresses below 25 MPa and temperatures above 1000 K, a new grain boundary sliding mechanism was observed with n approx. 2, Qc approx. 100 kJ/ mol and a grain size exponent of about 2. It is demonstrated that Coble creep and accommodated grain boundary sliding models fail to predict the experimental creep rates by several orders of magnitude.

Raj, S. V.↗