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Results for “Contactless Current Transfer”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Field Emission Current Transfer for Homopolar Machines

With the increasing electrification of transportation, the need for high power density electric machines is higher than ever. The required specific power for the more demanding applications, such as airplane propulsion, is over 20 kW/kg for multi-megawatt range power levels. Fully superconducting synchronous machines could reach the required performance, but significant challenges remain to be addressed such as AC losses management and rotating cryogenics implementation. Homopolar machines constitute the simplest electro-mechanical conversion systems possible, however the difficulty of establishing reliable and efficient low voltage, high DC current transfer from a stationary to a rotating system has prevented homopolar machines from competing with AC electrical machines. While sliding contacts or liquid metal contacts are feasible, they lead to high losses, high maintenance requirements and the use of environmentally unfriendly materials. We investigated field emission current transfer as an alternative to sliding contacts. We have demonstrated field emission current transfer in vacuum between a copper electrode and carbon nanotubes and diamond pyramids to evaluate the feasibility of contact-free current transfer for homopolar machines. The initial field emission testing was successfully demonstrated with current densities in the 10 mA/cm 2 range. The initial experiments validated the concept and supported the development of a roadmap for the development of contactless current transfer for homopolar machines, helped understand the limitations of the current test system and identify the key parameters that will lead to better performance.

99 GENERAL AND MISCELLANEOUS↗
DOE OSTI2023

Contactless measurement of the photovoltage in BiVO 4 photoelectrodes

The power output of photoelectrochemical devices for solar energy-to-fuel conversion is determined by the photovoltage of the junction under illumination. In the presence of fast redox couples, the photovoltage can be obtained directly from current–voltage measurements of the device. However, for slow redox couples (H + /H 2 , O 2 /H 2 O) used in solar fuel photoelectrodes, photovoltage measurements are not straightforward, due to the kinetic overpotentials during charge transfer. Here we show that the photovoltage of BiVO 4 electrodes in contact with fast electron donors KI, Na 2 SO 3 or H 2 O 2 or K 4 Fe(CN) 6 can be measured in a contactless way with vibrating Kelvin probe surface photovoltage (SPV) spectroscopy. The photovoltage varies with illumination wavelength and intensity and matches the open circuit potential of the electrodes, obtained separately from electrochemical measurements. Plots of the photovoltage versus irradiance can be used to predict the oxidizing power of each electrode under zero applied bias. Except for K 4 Fe(CN) 6 , which causes shunting in the BiVO 4 electrode, photovoltage values correlate well with the built-in potential of each junction. Furthermore, the ability to obtain photovoltage information through contactless SPV measurements will be useful in the search for solid–liquid junctions with superior energy conversion properties.

14 SOLAR ENERGY↗
DOE OSTI2022

A 1MHz Oak Ridge AC / DC Converter for UAV Contactless Charger Implementation

In this paper, a 1 MHz single-phase Oak Ridge Converter (ORC) AC/DC wireless power transfer (WPT) system is introduced for unmanned air vehicle (UAV) charging applications. The proposed advanced solution eliminates the design, weight, volume, and the cost of the power factor correcting (PFC) front-end rectifier compared to the conventional practices. Additionally, grid power quality requirements can be achieved with the presented innovative idea. With this method, single stage WPT primary side uses the hybrid grid frequency and high frequency (60 Hz and 1 MHZ) from ac source through the coupler coils and to UAV battery with GaN FETs. Experimental results of the single-phase system is presented to confirm the mathematical analyses with the source voltage of 110 VAC, RMS and output voltage of 40 VDC at 1 kW power with 6 inches air gap between couplers. The primary coupler consists of a ferrite-backed single-turn coil with a radius of 1.5 ft, and the secondary coupler is made with an air-core single-turn coil with radius of 1.2 ft. The system overall ac to dc efficiency is measured 77 % acquiring 0.99 power factor (PF) and 3.3 % current total harmonic distortion (THD) at 1 kW power.

Asa, Erdem↗
DOE OSTI2025

Operando Contactless EFISH Study of the Rate-Determining Step of Light-Driven Water Oxidation on TiO 2 Photoanodes

For many slow solar-fuel-forming reactions, the accumulation of photogenerated minority carriers on the photoelectrode surface leads to light-induced band edge unpinning, affecting the junction properties by decreasing band bending in the semiconductor space charge layer and increasing the driving force of surface reactions in the electric double layer. In this study, we demonstrate a contactless operando electric field-induced second harmonic generation (EFISH) method for measuring the band bending change (δΔΦ SCR L ) on photoelectrodes upon photoexcitation. For ndoped rutile TiO 2 water oxidation photoanodes at pH 7, δΔΦ SCR L increases at more positive potentials or higher illumination power density until it reaches saturation values. We show that under fast mass transport conditions, δΔΦ SCR L is exclusively attributed to the accumulated charged rate-determining species that can be regarded as temporary surface states, and the relationship between the photocurrent and δΔΦ SCR L can be well modeled by assuming that hole trap states function as the reaction center. Kinetic isotope experiments identify proton-coupled electron transfer as the rate-determining step and suggest a possible chemical nature of the key intermediate. We demonstrate that light-induced band edge unpinning is a beneficial feature under high illumination conditions for oxygen evolution reaction on TiO 2 because it maintains the photon-to-current conversion efficiency by enhancing the surface reaction driving force, shedding light on the actual device application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Highly Responsive Near-Infrared Photodetector Based on Contactless PdSe 2 Integration with a Few-Layered MoSe 2 Field-Effect Transistor

Two-dimensional (2D) semiconductors with narrow bandgaps are promising candidates for near- and far-infrared (IR) photodetection, particularly in the telecommunication spectral window. However, current low-bandgap IR photodetectors face significant challenges due to their high dark current, increased carrier recombination, and thermally generated noise. Here, in this work, a hybrid phototransistor is demonstrated by integrating direct, contact-free palladium diselenide (PdSe 2 ) as a highly responsive IR detection layer with a non-IR-absorbing molybdenum diselenide (MoSe 2 ) field-effect transistor (FET), using a near-IR source at a wavelength of λ = 1650 nm. Exfoliated PdSe 2 flakes integrated into a back-gated FET architecture exhibit ambipolar transport behavior, with extracted hole and electron mobilities of 24.8 cm 2 V –1 s –1 and 58.4 cm 2 V –1 s –1 , respectively. The devices show a clear photocurrent generation under the illumination of a λ = 1650 nm laser source, achieving a notable responsivity of ∼300 mA W -1 at an applied gate voltage of 15 V, which highlights the suitability of PdSe 2 as a narrow-bandgap material for photodetection. Photoresponsivity saturates and does not have any effect above an applied gate voltage of 15 V. To further tune the photoresponsivity performance continuously with the applied gate voltage, we construct a van der Waals heterostructure phototransistor, where few layers of PdSe 2 are directly transferred onto the 2D channel region of a MoSe 2 FET, while avoiding any contact with the metal electrodes. In this heterostructure, PdSe 2 works as the primary active IR-absorbing layer, while MoSe 2 provides high-performance FET characteristics. This spatial separation of absorption and transport facilitates efficient interlayer charge transfer and charge separation, resulting in high responsivities of up to 972 mA W –1 at near-IR wavelengths and a low power density of 1.5 mW/mm 2 . The responsivity of our photodetector is comparable to that of some state-of-the-art commercially available NIR photodetectors, highlighting the potential of PdSe 2 -based heterostructures as scalable, CMOS-compatible platforms for high-performance near-IR detection.

Infrared (IR) photodetectors↗