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Results for “Coplanar transmission lines”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Propagation characteristics of some novel coplanar waveguide transmission lines on GaAs at MM-wave frequencies

Three new Coplanar Waveguide (CPW) transmission lines, namely, Suspended CPW (SCPW), Stripline-like Suspended CPW (SSCPW) and Inverted CPW (ICPW), are proposed and also analyzed for their propagation characteristics. The substrate thickness, permittivity and dimensions of housing are assumed to be arbitrary. These structures have the following advantages over conventional CPW. Firstly, the ratio of guide wavelength to free space wavelength is closer to unity which results in larger dimensions and hence lower tolerances. Secondly, the effective dielectric constant is lower and hence the electromagnetic field energies are concentrated more in the air regions which should reduce attenuation. Thirdly, for a prescribed impedance level, the above structures have a wider slot width for identical strip width. Thus, low impedance lines can be achieved with reasonable slot dimensions. Fourthly, in an inverted CPW shunt mounting of active devices, such as Gunn and IMPATT diodes, between the strip and the metal trough is possible. This feature further enhances the attractiveness of the above structures. Lastly, an E-plane probe type transition from a rectangular waveguide to suspended CPW can also be easily realized. The computed results for GaAs at Ka-band illustrate the variation of normalized guide wavelength, effective dielectric constant and the characteristic impedance as a function of the: (1) frequency; (2) distance of separation between the trough side walls; (3) normalized strip and slot widths; and (4) normalized air gap.

Simons, Rainee N.↗
NASA NTRS1993

Attenuation of epsilon(sub eff) of coplanar waveguide transmission lines on silicon substrates

Attenuation and epsilon(sub eff) of Coplanar Waveguide (CPW) transmission lines were measured on Silicon substrates with resistivities ranging from 400 to greater than 30,000 ohm-cm, that have a 1000 angstrom coating of SiO2. Both attenuation and epsilon(sub eff) are given over the frequency range 5 to 40 GHz for various strip and slot widths. These measured values are also compared to the theoretical values.

Taub, Susan R.↗
NASA NTRS2002

Experimental Analysis of Reduced-Sized Coplanar Waveguide Transmission Lines

An experimental investigation of the use of capacitive loading of coplanar waveguides to reduce their line length and, thus the size, of monolithic microwave integrated circuits is presented. The reduced sized coplanar waveguides are compared to unloaded transmission lines and to lumped element transmission line segments. The phase bandwidth, defined by 2 percent error in S(sub 21), and the return loss bandwidth, defined by a return loss greater than 15 dB, of coplanar waveguides reduced from 0 to 90 percent are compared, and the insertion loss as a function of the size reduction is presented.

Ponchak, George E.↗
NASA NTRS1993

Development of Si(1-x)Ge(x) technology for microwave sensing applications

The progress for the first year of the work done under the Director's Discretionary Fund (DDF) research project entitled, 'Development of Si(1-x)Ge(x) Technology for Microwave Sensing Applications.' This project includes basic material characterization studies of silicon-germanium (SiGe), device processing on both silicon (Si) and SiGe substrates, and microwave characterization of transmission lines on silicon substrates. The material characterization studies consisted of ellipsometric and magneto-transport measurements and theoretical calculations of the SiGe band-structure. The device fabrication efforts consisted of establishing SiGe device processing capabilities in the Lewis cleanroom. The characterization of microwave transmission lines included studying the losses of various coplanar transmission lines and the development of transitions on silicon. Each part of the project is discussed individually and the findings for each part are presented. Future directions are also discussed.

Mena, Rafael A.↗
NASA NTRS1993

Tuners For Coplanar-Strip Transmission Lines

Sliding radio-frequency short circuits easily adjusted for optimum impedance. Tuning elements developed for use in planar integrated circuits operating at frequencies from about 10 to more than 1,000 GHz. Purpose of such adjustment to adjust impedance presented to circuit connected to nonshorted end of transmission line and thereby optimizes performance of circuit. Mixers, oscillators, amplifiers, couplers, and phase shifters among circuits improved by incorporating tuners of this type.

Mcgrath, William R.↗
DOE OSTI2019

Frequency Dependence of an Electromagnetic Absorption Coefficient in Magnetic Fluid

The samples of water-based magnetic fluid, which contain Fe{sub 3}O{sub 4}–SiO{sub 2} particles with a spherical shape and sizes less than 100 nm, have been obtained. The method based on using a transmission line has been applied to measure the electromagnetic absorption coefficient in the frequency range from 0.1 to 18.0 GHz using a measuring setup based on horn antennas and the cell based on a coplanar transmission line. It has been found that magnetic fluids can be used to produce electromagnetic shields and electromagnetic wave absorbers as well as means to carry out local hyperthermia at electromagnetic radiation frequencies higher than 7 GHz.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Observing electron spin resonance between 0.1 and 67 GHz at temperatures between 50 mK and 300 K using broadband metallic coplanar waveguides

We describe a fully broadband approach for electron spin resonance (ESR) experiments, where it is possible to tune not only the magnetic field but also the frequency continuously over wide ranges. Here, a metallic coplanar transmission line acts as compact and versatile microwave probe that can easily be implemented in different cryogenic setups. We perform ESR measurements at frequencies between 0.1 and 67 GHz and at temperatures between 50 mK and room temperature. Three different types of samples (Cr{sup 3+} ions in ruby, organic radicals of the nitronyl-nitroxide family, and the doped semiconductor Si:P) represent different possible fields of application for the technique. We demonstrate that an extremely large phase space in temperature, magnetic field, and frequency for ESR measurements, substantially exceeding the range of conventional ESR setups, is accessible with metallic coplanar lines.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Design and Fabrication of Quantum Information Processing Devices (Final Report)

The goal of this work is to develop a wideband Josephson Parametric Amplifier (JPA) by the combination of a coplanar impedance transformer and a lumped Josephson Parametric Amplifier. Josephson Parametric Amplifiers take advantage of the nonlinear inductance of Josephson junctions and the nearly lossless superconductor circuits to achieve wave mixing and amplification with only quantum-limited added noise, which makes it a key component in quantum measurements, such as single-shot qubit measurement. However, the current JPAs generally have a relatively high quality factor and small bandwidth (around 50MHz to 100MHz), which limits their ability in measuring signals from a broad spectrum. Therefore, the work planned to use a coplanar impedance transformer to enhance the coupling between JPA and the signals, resulting in a small quality factor and large bandwidth. By decreasing the quality factor of JPA to around 3, one can achieve around 20dB gain within a bandwidth of several hundred MHz. Moreover, the wideband feature allows this device to explore the frequency dependence of the coupling between the JPA and the signals. Because the impedance transformer is based on a coplanar transmission line and requires no modifications of the lumped JPA, it is relatively straightforward to embed it in the current fabrication, package, and testing process for lumped JPA. The impedance transformer can be fabricated by liftoff or etching process with the lumped JPA together, which adds no fabrication complexity. The only difference is the size, which is around 3~5 times larger than lumped JPA. This may make the number of available chips on a single wafer lower. As for the public benefits, the development of this wideband JPA will make it possible to use just a single JPA device for multi-frequency signals, for example, the readout signals of a superconducting qubit chip with multiplexed readout bus. This would greatly decrease the demand for JPAs in quantum measurements.

42 ENGINEERING↗
NASA NTRS1987

Investigation of a GaAlAs Mach-Zehnder electro-optic modulator

A GaAs modulator operating at 0.78 to 0.88 micron wavelength has the potential to be integrated with a GaAs/GaAlAs laser diode for an integrated fiber-optic transmitter. A travelling-wave Mach-Zehnder modulator using the electro-optic effect of GaAs and operating at a wavelength of 0.82 microns has been investigated for the first time. A four layer Strip-loaded ridge optical waveguide has been analyzed using the effective index method and single mode waveguides have been designed. The electro-optic effect of GaAs has also been analyzed and a modulator using the geometry producing the maximum phase shift has been designed. A coplanar transmission line structure is used in an effort to tap the potentially higher bandwidth of travelling-wave electrodes. The modulator bandwidth has been calculated at 11.95 GHz with a required drive power of 2.335 Watts for full intensity modulation. Finally, some preliminary experiments were performed to characterize a fabrication process for the modulator.

Materna, David M.↗
NASA NTRS1991

Sliding backshorts for planar circuits

An adjustable planar imbedding circuit based on coplanar transmission lines is presented to deal with the impedance mismatch associated with the use of the Superconductor-Insulator-Superconductor tunnel junction. The planar embedding circuit is developed with movable noncontacting shorting elements that consist of thin metallic plates with optimized arrangements of rectangular holes. The rectangular holes are placed along the insulated metallic transmission line to provide a periodic variation of the line impedance. A large reflection coefficient is demonstrated with a scale model of the sliding backshort, and values of more than -0.5 dB are reported. The shorting elements are incorporated into a low-frequency tuning circuit to test the practical tuning ranges. The backshort can be used to fashion tuning stubs with variable post-fabrication electrical lengths which relaxes the design constraints of planar integrated circuits.

Lubecke, Victor M.↗
NASA NTRS1998

Finite Ground Coplanar (FGC) Waveguide: A Better Transmission Line for Microwave Circuits

A new version of coplanar waveguide (CPW) with electrically narrow ground strips 14 has been developed for microwave integrated circuits. This transmission line, referred to by Finite Ground Coplanar (FGC) waveguide, has several advantages over conventional coplanar waveguide. Since the ground strips are narrow, parasitic resonances that develop when the CPW is placed on a carrier or in a package are eliminated. In addition, the narrow ground strips permit the integration of lumped and distributed circuit elements in the ground strips as well as in the center strip to reduce the circuit size and improve its performance. Finally, the coupling between adjacent FGC transmission lines is lower than the coupling between CPW lines for the same spacing between the lines. All of these attributes of FGC are presented in this paper.

Ponchak, George E.↗
NASA NTRS2013

Implementation of a Novel Low-Cost Low-Profile Ku-Band Antenna Array for Single Beam Steering from Space

Phased array antennas afford many advantages over traditional reflector antennas due to their conformality, high aperture efficiency, and unfettered beam steering capability at the price of increased cost and complexity. This paper eliminates the complex and costly array backend via the implementation of a series fed array employing a propagation constant reconfigurable transmission line connecting each element in series. Scanning can then be accomplished through one small (less than or equal to 100mil) linear motion that controls propagation constant. Specifically, each element is fed via a reconfigurable coplanar stripline transmission line with a tapered dielectric insert positioned between the transmission line traces. The dielectric insert is allowed to move up and down to control propagation constant and therefore induce scanning. We present a 20 element patch array design, scanning from -25 deg. less than or equal to theta less than or equal to 21 deg. at 13GHz. Measurements achieve only10.5 deg. less than or equal to theta less than or equal to 22 deg. scanning due to a faulty, yet correctable, manufacturing process. Beam squint is measured to be plus or minus 3 deg. for a 600MHz bandwidth. This prototype was improved to give scanning of 3.5 deg. less than or equal to theta less than or equal to 22 deg. Cross-pol patterns were shown to be -15dB below the main beam. Simulations accounting for fabrication errors match measured patterns, thus validating the designs.

Reconfigurable Transmission Lines↗
NASA NTRS2007

High Temperature Characteristics of Coplanar Waveguide on R-Plane Sapphire and Alumina

This paper presents the characteristics of coplanar waveguide transmission lines on R-plane sapphire and alumina over the temperature range of 25 to 400 C and the frequency range of 45 MHz to 50 GHz. A Thru-Reflect-Line calibration technique and open circuited terminated stubs are used to extract the attenuation and effective permittivity. It is shown that the effective permittivity of the transmission lines and, therefore, the relative dielectric constant of the two substrates increase linearly with temperature. The attenuation of the coplanar waveguide varies linearly with temperature through 200 C, and increases at a greater rate above 200 C.

Ponchak, George E.↗
NASA NTRS1989

Improved Coplanar Waveguides

Three new types of coplanar waveguide transmission lines proposed: suspended, striplinelike suspended, and inverted. Numerical analyses of propagation of electromagnetic fields of new and of more-conventional plain and conductor-backed coplanar waveguides showed new waveguides offered several advantages over conventional ones. Configurations promise lower attenuation and reduce effects of manufacturing errors.

Simons, Rainee N.↗
DOE OSTI2016

Microwave dynamics of high aspect ratio superconducting nanowires studied using self-resonance

We study the microwave impedance of extremely high aspect ratio (length/width ≈ 5000) superconducting niobium nitride nanowires. The nanowires are fabricated in a compact meander geometry that is in series with the center conductor of a 50 Ω coplanar waveguide transmission line. The transmission coefficient of the sample is measured up to 20 GHz. At high frequency, a peak in the transmission coefficient is seen. Numerical simulations show that this is a half-wave resonance along the length of the nanowire, where the nanowire acts as a high impedance, slow wave transmission line. This resonance sets the upper frequency limit for these nanowires as inductive elements. Fitting simulations to the measured resonance enables a precise determination of the nanowire's complex sheet impedance at the resonance frequency. The real part is a measure of dissipation, while the imaginary part is dominated by kinetic inductance. We characterize the dependence of the sheet resistance and sheet inductance on both temperature and current and compare the results to recent theoretical predictions for disordered superconductors. These results can aid in the understanding of high frequency devices based on superconducting nanowires. They may also lead to the development of novel superconducting devices such as ultra-compact resonators and slow-wave structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Broadband coplanar-waveguide-based impedance-transformed Josephson parametric amplifier

Quantum-limited Josephson parametric amplifiers play a pivotal role in advancing the field of circuit quantum electrodynamics by enabling the fast and high-fidelity measurement of weak microwave signals. Therefore, it is necessary to develop robust parametric amplifiers with low noise, broad bandwidth, and reduced design complexity for microwave detection. However, current broadband parametric amplifiers either have degraded noise performance or rely on complex designs. Here, we present a device based on the broadband impedance-transformed Josephson parametric amplifier that integrates a hornlike coplanar waveguide transmission line, which significantly decreases the design and fabrication complexity while keeping comparable performance. The device shows an instantaneous bandwidth of 700 (200) MHz for 15 (20) dB gain with an average input saturation power of − 110 dBm and near quantum-limited added noise. The operating frequency can be tuned over 1.4 GHz using an external flux bias. We further demonstrate the negligible backaction from our device on a transmon qubit. The amplification performance and simplicity of our device promise its wide adaptation in quantum metrology, quantum communication, and quantum information processing. Published by the American Physical Society 2024

Qing, Bingcheng (ORCID:0000000345227017)↗
NASA NTRS1990

High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs

A GaAs material grown by molecular beam epitaxy at a low substrate temperature was used to fabricate a photoconductor switch that produces 6-V picosecond electrical pulses. The pulses were produced on a microwave coplanar-strip transmission line lithographically patterned on the low-temperature (LT) GaAs. A 150-fs laser pulse was used to generate carriers in the LT GaAs gap between the metal strips, partially shorting a high DC voltage placed across the lines. The 6-V magnitude of the electrical pulses obtained is believed to be limited by the laser pulse power and not by the properties of the LT GaAs. Experiments were also performed on a picosecond photoconductor switch fabricated on a conventional ion-damaged silicon-on-sapphire substrate. Although comparable pulse durations were obtained, the highest pulse voltage achieved with the latter device was 0.6 V.

Frankel, Michael Y.↗