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At least 19 records

Photocapacitance effects at a Cu2S-CdS heterojunction.

The influence of trapped charge on the photovoltaic properties of an efficient Cu2S-CdS single-crystal heterojunction has been studied by a photocapacitance technique. For the nonheat-treated cell, a persistent increment in capacitance as high as 70% of the dark capacitance remained after illumination of the junction by band-gap light at 100 K. The additional capacitance is due to holes trapped in deep levels in the CdS depletion region near the interface. The trapped holes enhanced the 100 K photocurrent spectrum uniformly by a factor of 3 before heat treatment. After a 200 C heat treatment in air, the maximum trapped charge at 100 K enhanced the photocurrent by two orders of magnitude. The results are interpreted in terms of the tunneling through a conduction band spike of electrons photoexcited in the Cu2S.

Lindquist, P. F.↗

Heat treatment effects in Cu2S-CdS heterojunction photovoltaic cells

The dependence of the short-circuit current on photon energy, temperature, and the state of optical degradation (or enhancement) is determined in a study of the photovoltaic properties of Cu2S-CdS single-crystal heterojunctions. A coherent formulation is proposed for the relationship between enhancement and optical degradation and for their effects on the transport of a short-circuit photoexcited current and dark forward-bias current in a photovoltaic cell. Optical degradation in a Cu2S-CdS cell is shown to be identical to the optical degradation of lifetime in a homogeneous CdS:Cd:Cu crystal.

Fahrenbruch, A. L.↗

Thermally-restorable optical degradation and the mechanism of current transport in Cu2S-CdS photovoltaic cells

The photovoltaic properties of single-crystal Cu2S-CdS heterojunctions have been investigated as a function of heat treatment by detailed measurements of the dependence of short-circuit current on photon energy, temperature, and the state of optical degradation or enhancement. A coherent picture is formulated for the relationship between enhancement and optical degradation, and their effect on the transport of short-circuit photoexcited current and dark, forward-bias current in the cell. Optical degradation in the Cu2S-CdS cell is shown to be closely identical to optical degradation of lifetime in a homogeneous CdS:Cd:Cu crystal, indicating that the CdS:Cu layer near the junction interface controls carrier transport in the cell. It is proposed that both the photoexcited short-circuit current and the dark, forward-bias current are controlled by a tunneling-recombination process through interface states.

Fahrenbruch, A. L.↗

Thermally restorable optical degradation effects in heat-treated Cu2S-CdS crystal heterojunctions.

We have shown that heat treatment alone does not produce appreciable degradation of the short-circuit current in Cu2S-CdS single-crystal photovoltaic heterojunctions. The degradation, which has been commonly observed, is the result of optically induced effects in the heat-treated cell, subsequent to the heat treatment. These optically induced effects can be correlated with photochemical changes induced in single crystals of CdS:Cd:Cu in which the density of Cu acceptors exceeds the density of excess-Cd donors. Major conclusions about the mechanism of the photovoltaic effect and heat-treatment processes can be drawn.

Kanev, S. K.↗

Heat treatment effects in Cu2S-CdS heterojunction photovoltaic cells

The optical and electronic properties of single crystal Cu2S-CdS photovoltaic cells were investigated. In these cells trapped charge near the interface which is manifested by a persistent increase in junction capacitance (the photocapacitance) plays a significant role in determining the carrier transport properties. It was found that the severe degradation in short-circuit current observed in heat-treated cells can be separated into two components: (1) a relatively small thermal component occurring on heat-treatment in the dark, and (2) a much larger degradation caused by exposure to light at room temperature. By a short additional heat-treatment above approximately 100 C the cell can be completely restored to its condition before the optically caused degradation with no effect on the depletion layer width.

Fahrenbruch, A. L.↗

Very low cost thin film CdS-Cu2S solar cell development using chemical spraying

A chemical spray process for the production of thin film CdS-Cu2S solar cells is discussed that is projected to cost less than $60/kW in very large scale production. The average efficiency of these cells has been improved from less than 0.3% in 1971 about 4.5% at present. Further developments for the process are considered to raise the efficiency, and to attain long life stability.

Samara, G. A.↗

Investigation of thin film solar cells based on Cu2S and ternary compounds such as CuInS2

Production and characterization in thin film form of Cu2S and related Cu compounds such as CuInS2 for photovoltaic cells are examined. The low cost process technology being reported, namely the sulfurization method, is capable of producing films on various substrates. Cathodoluminescence is being used as a diagnostic tool to identify Cu(x)S and CuInS2 compounds. Also, single crystals of CuInS2 are being prepared and it is contemplated that p-n junctions will be made in such crystals.

Loferski, J. J.↗

Reactively sputtered thin film photovoltaic devices

The feasibility of a reactively sputtered thin film CdS - Cu2S solar cell is proven. Identification of the reactively sputtered Cu2S film is made by X-ray diffractometer and spectro-transmission measurements. Because of its simplicity, economical use of material, and high yield, the reactive sputtering process promises to be a low cost method for producing CdS - Cu2S solar cells.

Hsieh, E. J.↗

Wet chemical techniques for passivation of YBa2Cu3O7(7-x)

Wet chemical techniques are described for treatment of YBa2Cu3O(7-x) surfaces, resulting in the formation of native compounds with little or no reactivity to water. Promising native compounds include CuI, BaSO4, CuS, Cu2S, and the oxalates, all of which are either insoluble or have very low solubility in water. Treatment with dilute HI results in the formation of a native iodide film which is 80-90 percent CuI with small amounts of YI3 and BaI2. Treatment with dilute H2SO4 results in the formation of a film which is 95 percent BaSO4 and 5 percent Y2(SO4)3. Cu2S is formed on the surface with a dilute Na2S solution. An oxalate film with equal amounts of Y2(C2O4)3 and BaC2O4 results from treatment with dilute oxalic acid. X-ray photoelectron spectra show no significant changes when the sulfide, sulfate, or oxalate films are dipped in water, while the iodide film shows evidence of Cu(OH)2 formation.

Vasquez, R. P.↗