Search NASA⌕ Search

SEARCH · Search NASA

Results for “Current-induced polarization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

Current-Induced Spin Polarization in Nonmagnetic Semiconductors

The use of spontaneous electron spin polarization in nonmagnetic semiconductors avoids the transport challenges of electron spin injection from magnetic materials as well as packing constraints of small magnets in a dense array. Although the focus of rearch on the spontaneous spin polarization of electrical current has been on spin-orbit fields and their effects, in principle a moving electron gas can be unstable to forming spin-polarized distributions via carrier scattering processes that are independent of the carrier spin. The two required elements for such current-induced spin polarization without spin-orbit interactions are (1) the presence of built-in spatially-varying electric fields, either naturally forming (as in the Gunn effect) or extrinsic (as in a junction with spatially dependent doping) and (2) energy-dependent carrier scattering processes. As spin-orbit interactions are not required for this effect, it should occur in inversion-symmetric materials like silicon that lack zero-field spin splittings and materials like zinc oxide and gallium nitride that lack significant spin-orbit interactions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Opposite current-induced spin polarizations in bulk-metallic Bi 2 Se 3 and bulk-insulating Bi 2 Te 2 Se topological insulator thin flakes

One of the most fundamental and exotic properties of three-dimensional (3D) topological insulators (TIs) is spin-momentum locking (SML) of their topological surface states (TSSs), promising for potential applications in future spintronics. However, other possible conduction channels, such as a trivial two-dimensional electron gas (2DEG) with strong Rashba-type spin-orbit interaction (SOI) and bulk-conducting states that may possess a spin Hall effect (SHE), can coexist in 3D TIs, making determining the origin of the current-induced spin polarization (CISP) difficult. Here, we directly compared the CISP between bulk-insulating Bi 2 Te 2 Se (BTS221) and bulk-metallic Bi2Se3 thin flakes using spin potentiometry. In the bulk-insulating BTS221, the observed CISP has a sign consistent with the expected helicity of the SML of the TSS, but an opposite sign to its calculated bulk spin Hall conductivity. However, compared to BTS221, an opposite CISP is observed in the bulk-metallic Bi2Se3, consistent with both the expectations of its Rashba-Edelstein effect of the band-bending induced 2DEG and bulk intrinsic spin Hall Effect (SHE). If one assumes a representative occupation of the Rashba band of 3×10 13 cm –2 in Bi 2 Se 3 with a relevant relaxation time of 100 fs, the contribution to the CISP could be more dominated by the bulk intrinsic SHE. Our results provide an electrical way to distinguish the TSS from other possible conducting channels in spin transport measurements on 3D TIs, and open ways for the potential applications in charge-spin conversion devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrical detection of current generated spin in topological insulator surface states: Role of interface resistance

Current generated spin polarization in topological insulator (TI) surface states due to spin-momentum locking has been detected recently using ferromagnet/tunnel barrier contacts, where the projection of the TI spin onto the magnetization of the ferromagnet is measured as a voltage. However, opposing signs of the spin voltage have been reported, which had been tentatively attributed to the coexistence of trivial two-dimensional electron gas states on the TI surface which may exhibit opposite current-induced polarization than that of the TI Dirac surface states. Models based on electrochemical potential have been presented to determine the sign of the spin voltage expected for the TI surface states. However, these models neglect critical experimental parameters which also affect the sign measured. Here we present a Mott two-spin current resistor model which takes into account these parameters such as spin-dependent interface resistances, and show that such inclusion can lead to a crossing of the voltage potential profiles for the spin-up and spin-down electrons within the channel, which can lead to measured spin voltages of either sign. These findings offer a resolution of the ongoing controversy regarding opposite signs of spin signal reported in the literature, and highlight the importance of including realistic experimental parameters in the model.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Out-of-plane carrier spin in transition-metal dichalcogenides under electric current

Significance Although out-of-plane current-induced spin polarization (CISP) is important for perpendicular-magnetization reorientation, and it has been realized by the crystalline symmetry breaking, its material examples are relatively fewer compared with in-plane CISP in Rashba systems. With the help of intrinsic spin–orbit coupling, an intriguing out-of-plane CISP is designed in transition-metal dichalcogenides by the symmetry breaking in the spin space, which provides opportunities for out-of-plane magnetization rotation and electric control of valley splitting. Moreover, the spin polarization is associated with valley-dependent responses to electric current and adds a dimension, valley degree of freedom, to the study of CISP. The symmetry argument and non-Rashba effective model also helps to illuminate these physics and broaden the scope of the CISP.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Electro-osmo-dialysis through nanoporous layers physically conjugated to micro-perforated ion-exchange membranes: Highly selective accumulation of trace coions

This study explores theoretically and numerically the phenomenon of counter-flow accumulation of trace coions during electro-osmo-dialysis through composite membranes containing nanoporous and perforated ion-exchange layers. The combination of charged nanopores and perforations allows electroosmosis, and ion concentration polarization appears near the ion-exchange layer. Accumulation of trace coions occurs because their advective and electromigration flow velocity components have opposite signs and are locally compensating in depletion regions where electric fields are high. This local compensation of flow components can give rise to high accumulation factors (>1000 in some cases) for trace coions at some distance from the interface between the nanoporous and ion-exchange layers. Moreover, the extent of this accumulation depends on the trace-coion diffusion coefficient. The resulting selectivity between different coions might serve as a basis for environmentally friendly separation of ionic species such as synthetic peptides or rare-earth elements. For example, a periodic process might include accumulation followed by species release into smaller volumes of solution. For both rare-earth ions and peptide-like species, the accumulation selectivity between ions with small differences in mobilities depends on system parameters such as nanoporous-layer thickness, distance between the perforations, and the zeta potential of the nanopore surface. Here, the use of optimal values of these membrane parameters may enable tuning of the electro-osmo-dialysis system for separation of specific ions. Modelling reveals that despite inhomogeneous patterns of fluid and ion flows close to the nanoporous/perforated ion-exchange interface, at relatively short distances from this interface (less than half the distance between the perforations) all the flows become practically one-dimensional (1D). Similarly, the concentration profiles of trace coions also become 1D. The flow one-dimensionality at short distances from the current-polarized interface enables a simple 1D approximation that is useful for an approximate analysis of trends in this multi-parameter system.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A Limiting Case of Constant Counterion Electrochemical Potentials in the Membrane for Examining Ion Transfer at Ion-Exchange Membranes and Patches

We present that ion passage through ion-exchange membranes is vital in electrodialysis desalination, batteries and fuel cells, and water splitting. Simplified models of ion transport through such membranes frequently assume complete exclusion of coions (ions with the same sign of charge as the fixed charge in the membrane) from the membrane. However, a second assumption of constant counterion electrochemical potentials across the membrane leads to simple analytical expressions for ion fluxes and transmembrane potentials. Moreover, linear corrections to account for a small membrane electrical resistance yield analytical expressions with a wider applicability. For bi-ionic potential measurements and current-induced concentration polarization at low salt concentrations, these analytical solutions match the fluxes and potentials obtained numerically without the limiting assumptions. This gives confidence in both the limiting assumptions (under appropriate conditions) and the numerical solutions. At low ion concentrations, the analytical solutions may enable rapid characterization of membrane coatings or boundary layers in solution, and such boundary layers are important in many applications of ion-exchange membranes. In fact, the assumption of complete coion exclusion is sometimes more limiting than the constraint of constant electrochemical potentials of counterions across the membrane. Remarkably, this limiting case readily yields the ion accumulation and depletion regions above “ion-exchange patches” that reside beneath a solution with an applied electric field. Finally, such regions are important for sample pre-concentration in microfluidic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Permutable SOS (symmetry operational similarity)

Abstract Based on symmetry consideration, quasi-one-dimensional (1D) objects, relevant to numerous observables or phenomena, can be classified into eight different types. We provide various examples of each 1D type and discuss their symmetry operational similarity (SOS) relationships, which are often permutable. A number of recent experimental observations, including current-induced magnetization in polar or chiral conductors, non-linear Hall effect in polar conductors, spin-polarization of tunneling current to chiral conductors, and ferro-rotational domain imaging with linear gyration are discussed in terms of (permutable) SOS. In addition, based on (permutable) SOS, we predict a large number of new phenomena in low symmetry materials that can be experimentally verified in the future.

Materials Science↗

Unidirectional Magneto-Resistance in Modulation-Doped Magnetic Topological Insulators

Nonlinear unidirectional spin Hall magnetoresistance (USMR) has been reported in heavy metal/ferromagnet bilayers, which could be employed as an effective method in detecting the magnetization orientation in spintronic devices with 2-terminal geometry. Recently, another unidirectional magnetoresistance (UMR) was reported in magnetic topological insulator (TI)-based heterostructures at cryogenic temperature, whose amplitude is orders of magnitude larger than the USMR measured in heavy metal-based magnetic heterostructures at room temperature. Here, we report the UMR effect in the modulation-doped magnetic TI structures. This UMR arises due to the interplay between the magnetic dopant’s magnetization and the current-induced surface spin polarization, when they are parallel or antiparallel to each other in the TI material. By varying the dopant’s position in the structure, we reveal that the UMR is mainly originating from the interaction between the magnetization and the surface spin-polarized carriers (not bulk carriers). Furthermore, from the magnetic field-, the angular rotation-, and the temperature-dependence, we highlight the correlation between the UMR effect and the magnetism in the structures. The large UMR versus current ratio in TI-based magnetic bilayers promises the easy readout in TI-based spintronic devices with 2-terminal geometry.

42 ENGINEERING↗

Magnetic vortex control with current-induced axial magnetization in centrosymmetric Weyl materials

We consider magnetic Weyl metals as a platform to achieve current control of magnetization textures with transport currents utilizing their underlying band geometry. We show that the transport current in a Weyl semimetal produces an axial magnetization due to orbital magnetic moments of the Weyl electrons. The associated axial magnetization can generate a torque acting on the localized magnetic moments. For the case of a magnetic vortex in a nanodisk of Weyl materials, this current-induced torque can be used to reverse its circulation and polarity. We discuss the axial magnetization torques in Weyl metals on general symmetry grounds and compare their strength to current-induced torques in more conventional materials.

Physics↗

Electrical control of magnetism by electric field and current-induced torques

The remanent magnetization of ferromagnets has long been studied and used to store binary information. While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility of doing it by electrical means instead. In the 1990s, Slonczewski and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current generated by a first ferromagnet may be used to switch the magnetization of a second one. This discovery drove the development of spin-transfer-torque magnetic random-access memories (MRAMs). More recent fundamental research revealed other types of current-induced torques named spin-orbit torques (SOTs) and will lead to a new generation of devices including SOT MRAMs and skyrmion-based devices. Parallel to these advances, multiferroics and their magnetoelectric coupling, first investigated experimentally in the 1960s, experienced a renaissance. Dozens of multiferroic compounds with new magnetoelectric coupling mechanisms were discovered and high-quality multiferroic films were synthesized (notably of BiFeO 3 ), also leading to novel device concepts for information and communication technology such as the magnetoelectric spin-orbit (MESO) transistor. The story of the electrical switching of magnetization, which is discussed in this review, is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO transistors, microwave emitters, spin diodes, skyrmion-based devices, components for neuromorphics, etc.). This pas de deux has led to major scientific and technological breakthroughs in recent decades (such as the conceptualization of pure spin currents, the observation of magnetic skyrmions, and the discovery of spin-charge interconversion effects). As a result, this field has not only propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, in this review, recent advances in the control of magnetism by electric fields and by current-induced torques are covered. Fundamental concepts in these two directions are reviewed first, their combination is then discussed, and finally current various families of devices harnessing the electrical control of magnetic properties for various application fields are addressed. The review concludes by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science.

36 MATERIALS SCIENCE↗

Current-Induced Reversal of Anomalous Hall Conductance in Twisted Bilayer Graphene

It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the fourfold degenerate conduction flat bands. The experiment implies a switching of the valley polarization (VP) and topology in TBG. In this work, we present a theory on the current-induced switching of VP and topology. The presence of current in the bulk causes the redistribution of electron occupation in bands near the Fermi energy, which then deforms and shifts the band dispersion due to the Coulomb interaction. Above a critical current, the original occupied and empty bands can be swapped, resulting in the switching of VP and topology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Room-Temperature, Current-Induced Magnetization Self-Switching in A Van Der Waals Ferromagnet

2D layered materials with broken inversion symmetry are being extensively pursued as spin source layers to realize high-efficiency magnetic switching. Such low-symmetry layered systems are, however, scarce. In addition, most layered magnets with perpendicular magnetic anisotropy show a low Curie temperature. Here, in this study, the experimental observation of spin–orbit torque magnetization self-switching at room temperature in a layered polar ferromagnetic metal, Fe 2.5 Co 2.5 GeTe 2 is reported. The spin–orbit torque is generated from the broken inversion symmetry along the c-axis of the crystal. These results provide a direct pathway toward applicable 2D spintronic devices.

36 MATERIALS SCIENCE↗

First Application of the Zeeman Technique to Remotely Measure Auroral Electrojet Intensity From Space

Using the O2 118 GHz spectral radiance measurements obtained by the Microwave Limb Sounder instrument on board the Aura spacecraft, we demonstrate that the Zeeman effect can be used to remotely measure the magnetic field perturbations produced by the auroral electrojet near the Hall current closure altitudes. Our derived current-induced magnetic field perturbations are found to be highly correlated with those coincidently obtained by ground magnetometers. These perturbations are also found to be linearly correlated with auroral electrojet strength. The statistically derived polar maps of our measured magnetic field perturbation reveal a spatial-temporal morphology consistent with that produced by the Hall current during substorms and storms. With today's technology, a constellation of compact, low-power, high spectral-resolution cubesats would have the capability to provide high precision and spatiotemporal magnetic field samplings needed for auroral electrojet measurements to gain insights into the spatiotemporal behavior of the auroral electrojet system.

spectral radiance measurements; Aur↗

Dynamic Structure and Phase Behavior of a Block Copolymer Electrolyte under dc Polarization

There is an important consideration when designing lithium battery electrolytes for advanced applications is how the electrolyte facilitates ion transport at fast charge and discharge rates. Large current densities are accompanied by large salt concentration gradients across the electrolyte. Nanostructured composite electrolytes have been proposed to enable the use of high energy density lithium metal anodes, but many questions about the interplay between the electrolyte morphology and the salt concentration gradient that forms under dc polarization remain unanswered. To address these questions, we use an in situ small-angle X-ray scattering technique to examine the nanostructure of a polystyrene- block -poly(ethylene oxide) copolymer electrolyte under dc polarization with spatial and temporal resolution. In the quiescent state, the electrolyte exhibits a lamellar morphology. The passage of ionic current in a lithium symmetric cell leads to the formation of concurrent phases: a disordered morphology near the negative electrode, lamellae in the center of the cell, and coexisting lamellae and gyroid near the positive electrode. The most surprising result of this study was obtained after the applied electric field was turned off: a current-induced gyroid phase grows in volume for 6 h in spite of the absence of an obvious driving force. We show that this reflects the formation of localized pockets of salt-dense electrolyte, termed concentration hotspots, under dc polarization. Our methods may be applied to understand the dynamic structure of composite electrolytes at appreciable current densities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Magnetochiral tunneling in paramagnetic Co 1/3 NbS 2

Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co 1/3 NbS 2 , the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up an avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals.

36 MATERIALS SCIENCE↗

Current-Driven Symmetry Breaking and Spin–Orbit Polarization in Chiral Wires

The spin dynamics of electrons in chiral molecular systems remains a topic of intense interest, particularly regarding whether geometric chirality inherently induces spin polarization in current-carrying electrons. In this work, we employ ab initio real-time time-dependent density functional theory (rt-TDDFT) to directly simulate the interplay among charge current, spin, and orbital. This realtime tracking extends beyond perturbative treatments, and we analyze how nonequilibrium currents effectively lift the symmetry constraints of screw rotation and time-reversal symmetry. We find that the emergence of spin and orbital angular momenta is dynamically correlated with a concomitant loss of translational (linear) momentum, which we interpret as an intrinsic consequence of current-driven symmetry lowering. The implications of this mechanism for chirality-induced spin selectivity and spintronics device design are discussed.

chiral wire↗

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque

Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.

42 ENGINEERING↗