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Single Event Testing of SDRAM, DDR2 and DDR3 Memories

SEE test results are presented for SDRAM, DDR2, and DDR3. No tested devices exhibited SEL. SBUs were observed, but no MBUs were observed in data words. SEFI data were taken at low and high speed.

Guertin, Steven M.

Total Ionizing Dose Response of SDRAM, DDR2 and DDR3 Memories

Total Ionizing Dose response (ID) of SDRAM (Synchronous Dynamic Random Access Memory), DDR2 (Double Data Rate2) and DDR3 (Double Data Rate3) memories is reported in static bias, and auto refresh modes. Data analysis reveals some types of memory have significant increases in stuck bits during TID exposure when refreshed.

Amrbar, Mehran

FY12 End of Year Report for NEPP DDR2 Reliability

This document reports the status of the NASA Electronic Parts and Packaging (NEPP) Double Data Rate 2 (DDR2) Reliability effort for FY2012. The task expanded the focus of evaluating reliability effects targeted for device examination. FY11 work highlighted the need to test many more parts and to examine more operating conditions, in order to provide useful recommendations for NASA users of these devices. This year's efforts focused on development of test capabilities, particularly focusing on those that can be used to determine overall lot quality and identify outlier devices, and test methods that can be employed on components for flight use. Flight acceptance of components potentially includes considerable time for up-screening (though this time may not currently be used for much reliability testing). Manufacturers are much more knowledgeable about the relevant reliability mechanisms for each of their devices. We are not in a position to know what the appropriate reliability tests are for any given device, so although reliability testing could be focused for a given device, we are forced to perform a large campaign of reliability tests to identify devices with degraded reliability. With the available up-screening time for NASA parts, it is possible to run many device performance studies. This includes verification of basic datasheet characteristics. Furthermore, it is possible to perform significant pattern sensitivity studies. By doing these studies we can establish higher reliability of flight components. In order to develop these approaches, it is necessary to develop test capability that can identify reliability outliers. To do this we must test many devices to ensure outliers are in the sample, and we must develop characterization capability to measure many different parameters. For FY12 we increased capability for reliability characterization and sample size. We increased sample size this year by moving from loose devices to dual inline memory modules (DIMMs) with an approximate reduction of 20 to 50 times in terms of per device under test (DUT) cost. By increasing sample size we have improved our ability to characterize devices that may be considered reliability outliers. This report provides an update on the effort to improve DDR2 testing capability. Although focused on DDR2, the methods being used can be extended to DDR and DDR3 with relative ease.

Guertin, Steven M.

FY12 End of Year Report for NEPP DDR2 Reliability

This document reports the status of the NEPP Double Data Rate 2 (DDR2) Reliability effort for FY2012. The task expanded the focus of evaluating reliability effects targeted for device examination. FY11 work highlighted the need to test many more parts and to examine more operating conditions, in order to provide useful recommendations for NASA users of these devices. In order to develop these approaches, it is necessary to develop test capability that can identify reliability outliers. To do this we must test many devices to ensure outliers are in the sample, and we must develop characterization capability to measure many different parameters. For FY12 we increased capability for reliability characterization and sample size. We increased sample size by moving from loose devices to DIMMs with an approximate reduction of 20 to 50 times in terms of per DUT cost. By increasing sample size we have improved our ability to characterize devices that may be considered reliability outliers. This report provides an update on the effort to improve DDR2 testing capability. Although focused on DDR2, the methods being used can be extended to DDR and DDR3 with relative ease.

temperature stress