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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

kb_DRAM: annotation and metabolic profiling of genomes with DRAM in KBase

Microbial genome annotation is the process of identifying structural and functional elements in DNA sequences and subsequently attaching biological information to those elements. DRAM is a tool developed to annotate bacterial, archaeal, and viral genomes derived from pure cultures or metagenomes. DRAM goes beyond traditional annotation tools by distilling multiple gene annotations to genome level summaries of functional potential. Despite these benefits, a downside of DRAM is the requirement of large computational resources, which limits its accessibility. Further, it did not integrate with downstream metabolic modeling tools that require genome annotation. To alleviate these constraints, DRAM and the viral counterpart, DRAM-v, are now available and integrated with the freely accessible KBase cyberinfrastructure. With kb_DRAM users can generate DRAM annotations and functional summaries from microbial or viral genomes in a point-and-click interface, as well as generate genome-scale metabolic models from DRAM annotations.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2021

DRAM example narrative

DRAM example narrative DRAM on KBase let's anyone run annotations using DRAM in the cloud. DRAM is an annotation tool that can annotate bacterial, archaeal and viral genomes and distills those annotatios into represetations of the functional genomic potential of those organisms. If you want to read more about DRAM you can check out the GitHub, wiki and journal article. DRAM annotate assemblies In KBase Assembly objects contain nucleotide sequences from genomes or metagenomes. DRAM can predict genes and annotate their function from KBase Assembly objects which may be microbial isolate genomes, metagenome assembled genomes or metagenomes. This is done with the Annotate and Distill Assemblies with DRAM app. This app can also anntoate AssemblySet objects which contain collection of Assembly objects. It also generates a Genome object and a GenomeSet object which can be used for further analysis with other KBase apps. The full annotations and other DRAM files are also available for download in the app.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRSDate not supplied

Coupling a Computational Fluid Dynamics Model to a Spacecraft Thermal System Model for the DraMS Instrument Thermal Analysis

The Dragonfly Mass Spectrometer (DraMS) is an instrument on the Dragonfly mission, which will spend 7 years in deep space cruise before landing and operating on the surface of Titan. Vacuum thermal analyses are required for deep space cruise, and convection analyses are required for the Titan surface operations. Model exchanges across multiple thermal teams are needed for all phases of the mission. For DraMS, Thermal Desktop® (TD) has been the main thermal analytical tool of choice due to its capability in modeling complex thermal systems with relatively low computational power and for its availability across thermal teams. However, TD does not have computational fluid dynamics (CFD) capability and struggles to accurately capture complex convective behavior. DraMS has fans operating in tandem and gas flow behaviors are not easily predicted due to its complex flow paths. CFD software, such as Fluent, can model and predict such complex flow behaviors, but CFD models are computationally expensive, and its workflow processes are not tailored towards simulating large and complex systems. Therefore, a coupled modeling approach was chosen for DraMS: A TD model was used for simulating all the conductive, radiative, and source terms, while a Fluent CFD model was added on, as needed, to the TD model to provide the convective boundary conditions using the System Coupling software. The coupling software allows the TD and Fluent models to communicate data and arrive at a co-solved and co-converged solution. Furthermore, Thermal Iso-value Exchange (TIE) method was developed to facilitate and improve the TD-Fluent data exchange process. This paper will discuss the analytical studies that were done to verify the accuracy and usability of the coupled approach and the challenges associated, which lead to the development of the TIE approach. DraMS thermal design and co-solved analysis results will also be discussed.

Heat transfer↗
NASA NTRSDate not supplied

Coupling a Computational Fluid Dynamics (CFD) Model to a Spacecraft Thermal System Model for the DraMS Instrument Thermal Analysis

The Dragonfly Mass Spectrometer (DraMS) is an instrument on the Dragonfly mission, which will spend 7 years in deep space cruise before landing and operating on the surface of Titan. Vacuum thermal analyses are required for deep space cruise, and convection analyses are required for the Titan surface operations. Model exchanges across multiple thermal teams are needed for all phases of the mission. For DraMS, Thermal Desktop (TD) has been the main thermal analytical tool of choice due to its capability in modeling complex thermal systems with relatively low computational power and for its availability across thermal teams. However, TD does not have computational fluid dynamics (CFD) capability and struggles to accurately capture complex convective behavior. DraMS has fans operating in tandem and gas flow behaviors are not easily predicted due to its complex flow paths. CFD software, such as Fluent, can model and predict such complex flow behaviors, but CFD models are computationally expensive, and its workflow processes are not tailored towards simulating large and complex systems. Therefore, a coupled modeling approach was chosen for DraMS: A TD model was used for simulating all the conductive, radiative, and source terms, while a Fluent CFD model was added on, as needed, to the TD model to provide the convective boundary conditions using the System Coupling software. The coupling software allows the TD and Fluent models to communicate data and arrive at a co-solved and co-converged solution. Furthermore, Thermal Iso-value Exchange (TIE) method was developed to facilitate and improve the TD-Fluent data exchange process. This paper will discuss the analytical studies that were done to verify the accuracy and usability of the coupled approach and the challenges associated, which lead to the development of the TIE approach. DraMS thermal design and co-solved analysis results will also be discussed.

heat transfer↗
NASA NTRS1995

Radiation Evaluation of an Advanced 64Mb 3.3V DRAM and Insights into the Effects of Scaling on Radiation Hardness

In this paper, total ionizing dose radiation evaluations of the Micron 64 Mb 3.3 V, fast page mode DRAM and the IBM LUNA-ES 16 Mb DRAM are presented. The effects of scaling on total ionizing dose radiation hardness are studied utilizing test structures and a series of 16 Mb DRAMs with different feature sizes from the same manufacturing line. General agreement was found between the threshold voltage shifts of 16 Mb DRAM test structures and the threshold voltage measured on complete circuits using retention time measurements. Retention time measurement data from early radiation doses are shown that allow internal failure modes to be distinguished.

Radiation Hardness↗
NASA NTRS1992

Diagnosis of NMOS DRAM functional performance as affected by a picosecond dye laser

A picosec pulsed dye laser beam was at selected wavelengths successfully used to simulate heavy-ion single-event effects (SEEs) in negative channel NMOS DRAMs. A DRAM was used to develop the test technique because bit-mapping capability and previous heavy-ion upset data were available. The present analysis is the first to establish such a correlation between laser and heavy-ion data for devices, such as the NMOS DRAM, where charge collection is dominated by long-range diffusion, which is controlled by carrier density at remote distances from a depletion region. In the latter case, penetration depth is an important parameter and is included in the present analysis. A single-pulse picosecond dye laser beam (1.5 microns diameter) focused onto a single cell component can upset a single memory cell; clusters of memory cell upsets (multiple errors) were observed when the laser energy was increased above the threshold energy. The multiple errors were analyzed as a function of the bias voltage and total energy of a single pulse. A diffusion model to distinguish the multiple upsets from the laser-induced charge agreed well with previously reported heavy ion data.

Kim, Q.↗
NASA NTRS1993

Automated synthesis and verification of configurable DRAM blocks for ASIC's

A highly flexible embedded DRAM compiler is developed which can generate DRAM blocks in the range of 256 bits to 256 Kbits. The compiler is capable of automatically verifying the functionality of the generated DRAM modules. The fully automated verification capability is a key feature that ensures the reliability of the generated blocks. The compiler's architecture, algorithms, verification techniques and the implementation methodology are presented.

Pakkurti, M.↗
NASA NTRS1992

A DRAM compiler algorithm for high performance VLSI embedded memories

In many applications, the limited density of the embedded SRAM does not allow integrating the memory on the same chip with other logic and functional blocks. In such cases, the embedded DRAM provides the optimum combination of very high density, low power, and high performance. For ASIC's to take full advantage of this design strategy, an efficient and highly reliable DRAM compiler must be used. The embedded DRAM architecture, cell, and peripheral circuit design considerations and the algorithm of a high performance memory compiler are presented .

Eldin, A. G.↗
NASA NTRS1989

Internal Correction Of Errors In A DRAM

Error-correcting Hamming code built into circuit. A 256 K dynamic random-access memory (DRAM) circuit incorporates Hamming error-correcting code in its layout. Feature provides faster detection and correction of errors at less cost in amount of equipment, operating time, and software. On-chip error-correcting feature also makes new DRAM less susceptible to single-event upsets.

Zoutendyk, John A.↗
NASA NTRS1992

Responses Of A DRAM To Energetic Heavy Ions

Report presents results of experiments where multiple-bit errors were induced in 256-kbit commercial integrated-circuit dynamic random-access memory (DRAM) by variety of normally incident heavy ions. Idea demonstrates utility of DRAM and methods used to analyze experimental data, with view towards applying methods and data to other digital integrated circuits.

Zoutendyk, John A.↗
NASA NTRS2000

Angular dependence of DRAM upset susceptibility

Heavy ion irradiations of two types of commercial DRAMs reveal unexpected angular responses. One device's cross section varied by two orders of magnitude with azimuthal angle. Accurate prediction of space rates requires accommodating this effect.

DRAM angle SEU multiple bit upset DRAM upsets↗
NASA NTRS1998

64Mb COTS DRAMs: A Variety of SEE Responses

Advanced commercial DRAMs are particularly attractive to designers for space applications needing large memory arrays due to resulting savings in mass, volume, and power.

(MCMs)↗
DOE OSTI2022

KBase Narrative - kb_DRAM E. coli annotation

Here we are annotating a E. coli K-12 genome using both DRAM and RAST then using those annotations to build models. The genome is from NCBI RefSeq ID NC_000913.

Shaffer, Michael↗
NASA NTRS1990

Response of a DRAM to single-ion tracks of different heavy-ion species and stopping powers

Multiple-bit errors caused by single-ion tracks in a 256-kb DRAM fabricated by a bulk process were observed for different ion species and stopping power values. The results demonstrate the utility of this device for the evaluation of ion-beam uniformity and ion-beam-induced charge collection in IC devices. The data indicate that single-ion-induced charge transport results in multiple-bit error clusters due to lateral diffusion of excess minority carriers (electrons). Charge collection occurred from a depth of up to 35 microns from the surface of the device. An apparent charge loss was observed for very heavy ions with a high stopping power (Au at 350 MeV).

Zoutendyk, J. A.↗
NASA NTRS1997

Total Ionizing Dose Effects on 64Mb 3.3V DRAMs

64Mb 3.3V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response.

Ionizing Dose Effects Samsung Mitsubishi↗
NASA NTRS2018

A Novel 3D DRAM Memory Cube Architecture for Space Applications

The first mainstream products in 3D IC design are memory devices where multiple memory tiers are horizontally integrated to offer manifold improvements compared with their 2D counterparts. Unfortunately, none of these existing 3D memory cubes are ready for harsh space environments. This paper presents a new memory cube architecture for space, based on vertical integration of Commercial Off-The-Shelf (COTS), 3D stacked, DRAM memory devices with a custom Radiation-Hardened-By-Design (RHBD) controller offering high memory capacity, robust reliability and low latency.Validation and evaluation of the ASIC controller will be conducted prior to tape-out on a custom FPGA-based emulator platform integrating the 3D-stack.

Yang-Scharlotta, Jean↗