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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. I - Defect structure of undoped and copper doped Hg/0.8/Cd/0.2/Te. II - Defect structure of indium-doped Hg/0.8/Cd/0.2/Te

Hall effect and mobility measurements were conducted on undoped Hg(0.8)Cd(0.2)Te crystals which were quenched to room temperature after being subjected to equilibration at temperatures ranging from 400 to 655 C in various Hg atmospheres. The variation of the hole concentration in the cooled crystals at 77 K as a function of Hg's partial pressure at the equilibration temperature, together with a comparison of the hole mobility in the undoped samples with that in copper-doped ones, yields a defect model for the undoped crystals according to which they are intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. In the second part of this paper, the effects of indium doping are considered. The concentration of electrons obtained in the cooled crystals was found to be lower than the intrinsic carrier concentration at the equilibration temperatures. A defect model is proposed according to which most of the indium is incorporated as In2Te3(s) dissolved in the crystal, with only a small fraction of indium acting as single donors occupying Hg lattice sites.

Vydyanath, H. R.↗
NASA NTRS1981

Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. III - Defect structure of undoped Hg0.6Cd0.4Te

Hall effect measurements were carried out on undoped Hg0.6Cd0.4Te crystals quenched to room temperature subsequent to equilibration at temperatures varying from 450 to 720 C under various partial pressures of Hg. The variation of the hole concentration as a function of the partial pressure of Hg indicates that the native acceptor defects are doubly ionized. Native donor defects are found to be negligible in concentration and the p-type to n-type conversion is shown to be due to residual donors and not due to native donor defects. Thermodynamic constant for the incorporation of the doubly ionized native acceptor defect has been established.

Vydyanath, H. R.↗
NASA NTRS1982

Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.

Li, S. S.↗
NASA NTRS1989

Quasi-conformal remapping for compensation of human visual field defects - Advances in image remapping for human field defects

Image coordinate transformations are investigated for possible use in a low vision aid for human patients. These patients typically have field defects with localized retinal dysfunction predominately central (age related maculopathy) or peripheral (retinitis pigmentosa). Previously simple eccentricity-only remappings which do not maintain conformality were shown. Initial attempts on developing images which hold quasi-conformality after remapping are presented. Although the quasi-conformal images may have less local distortion, there are discontinuities in the image which may counterindicate this type of transformation for the low vision application.

Juday, Richard D.↗
NASA NTRS1994

Scaling effects of defects in fiber-reinforced composites

Material defects may be introduced willingly or unwillingly during material manufacturing and structural component fabrication stages. Their presence in the material plays a dominant role in determining the material's strength and the associate failure mechanisms. In the sense that the size and the number of defects may increase with the volume of the material, the effect of dimensional scaling may manifest itself in the dependence of material strength on volume. Or, alternatively, there may exist a scaling effect of material defects. In fiber-reinforced composites, manufacturing or fabrication defects may come in several forms: matrix voids, matrix microcracks, fiber misalignment, broken fibers, or interface disbonds, just to mention a few. These are interacting and competing defects in the sense that one type of defect may become dominant under one stress condition and another type of defect may become dominant under a different stress condition. This happens because the fiber reinforcement network, together with the distribution of defects, constitutes the prime microstructure of the composite, and there exist continued interactions between the evolving microstructure and the distribution of defects. In the process, the scaling effects of defects are complicated by this interaction. In this presentation, the scaling effects of defects in fiber-reinforced composites will be briefly discussed with the introduction of the concept of effective defects. It is then shown with the aid of some actual experimental and analysis results that the scaling effects are very much present, but they are regulated by the characteristic dimension of the composite microstructure due to the aforementioned microstructure-defect interaction effect.

Wang, A. S. D.↗
NASA NTRS1993

Defects in electro-optically active polymer solids

There is considerable current interest in the application of organic and polymeric materials for electronic and photonic devices. The rapid, non-linear optical (NLO) response of these materials makes them attractive candidates for waveguides, interferometers, and frequency doublers. In order to realize the full potential of these systems, it is necessary to develop processing schemes which can fabricate these molecules into ordered arrangements. There is enormous potential for introducing well-defined, local variations in microstructure to control the photonic properties of organic materials by rational 'defect engineering.' This effort may eventually become as technologically important as the manipulation of the electronic structure of solid-state silicon based devices is at present. The success of this endeavor will require complimentary efforts in the synthesis, processing, and characterization of new materials. Detailed information about local microstructure will be necessary to understand the influence of symmetry breaking of the solid phases near point, line, and planar defects. In metallic and inorganic polycrystalline materials, defects play an important role in modifying macroscopic properties. To understand the influence of particular defects on the properties of materials, it has proven useful to isolate the defect by creating bicrystals between two-component single crystals. In this way the geometry of a grain boundary defect and its effect on macroscopic properties can be determined unambiguously. In crystalline polymers it would be valuable to establish a similar depth of understanding about the relationship between defect structure and macroscopic properties. Conventionally processed crystalline polymers have small crystallites (10-20 nm), which implies a large defect density in the solid state. Although this means that defects may play an important or even dominant role in crystalline or liquid crystalline polymer systems, it also makes it difficult to isolate the effect of a particular boundary on a macroscopically observed property. However, the development of solid-state and thin-film polymerization mechanisms have facilitated the synthesis of highly organized and ordered polymers. These systems provide a unique opportunity to isolate and investigate in detail the structure of covalently bonded solids near defects and the effect of these defects on the properties of the material. The study of defects in solid polymers has been the subject of a recent review (Martin, 1993).

Martin, David C.↗
NASA NTRS2018

Automated Fiber Placement Defect Identity Cards: Cause, Anticipation, Existence, Significance, and Progression

Automated Fiber Placement (AFP), a major composite manufacturing process, can result in many defects during the layup process that often require manual corrective action to produce a part with acceptable quality. These defects are the main limitation of the technology and can be hard to categorize or define in many situations. This paper provides a thorough definition and classification of all AFP defects. This effort constitutes a comprehensive and extensive library relevant to AFP defects. The defects selected and defined in this work are based on understanding and experience from the manufacture and research of advanced composite structure. Proper classification of these defects required an in-depth literature review and consideration of various viewpoints ranging from designers, manufacturers, analysts, and inspection professionals. Collectively, these sources were utilized to develop the most accurate view of each of the individual defect types. The results are presented as identity cards for each defect type, intended to provide researchers and the manufacturing industry a clear understanding of the (1) cause, (2) anticipation, (3) existence, (4) significance, and (5) progression of the defined AFP defects. The link between AFP defects and process planning, layup strategies, and machining was also investigated. Categorization of all important automated fiber placement defects is presented.

Harik, Ramy↗
NASA NTRSDate not supplied

Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis

The Earth’s magnetosphere is a system of multiple, co-located particle populations interacting via plasma waves. Things to understand are driving processes, radiation belt and ring current issues, auroral physics, internal plasma processes, and magnetosphere-ionosphere mapping issues. These plasma-physics processes enable the Earth’s magnetosphere to evolve in response to temporal changes in the solar wind and they underlie the phenomena of space weather, which impacts spacecraft systems, astronauts, radio communications, and ground based electric-power grids. The objective of 3SM is to measure magnetic field strength and to calibrate the Vector Magnetometer (VM) device to maintain absolute accuracy during a mission. The 3SM features make the instrument preferably suited not only for the traditional role of scalar magnetometers as absolute references for the calibration of the on-board vector instruments, but also for extended operational capacities, such as higher frequency scalar measurements (of potential interest for magnetosphere studies for the low frequency part of the spectrum) or autonomous scalar / vector operations. Diamond has been the solid-state platform of choice for quantum device technologies for some time, however, it suffers from difficulties such as scalability, integration, and cost. While the diamond platform is very useful for quantum technologies, further development is needed to make it viable. The material platform of choice for NASA Glenn’s Quantum Sensing And Spin Physics (Q-SASP) is silicon carbide (SiC). This is due to the much higher industry development of the SiC material platform for high-power and high-temperature electronics. It leverages both the decades-long SiC development expertise and infrastructure at NASA Glenn and its growing capabilities in quantum metrology. To make SiC devices usable for quantum technologies such as quantum sources, a much deeper understanding of defects is needed. Q-SASP is developing quantum metrology capabilities to evaluate the energy structure, defect formation energy, band structure augmentation, generation/recombination rates, and limits of dipole-dipole coupling in non-metal implanted SiC devices. This can be achieved by analysis of zero-field splitting, low-field resonance, and singlet-triplet mixing through various forms of Electrically Detectable Magnetic Resonance (EDMR) and Near-Zero Field Magnetic Resonance (NZFMR) spectroscopy. This work will discuss recent system developments, device developments, computational modeling, and spectroscopy results and analysis of defects created by non-metal implantations in SiC devices. The defect formation energies of V Si ,V C , V C V Si , N C V Si , N Si , N C in 4H-SiC are previously reported values in other research [2]-[3]. The defect formation energies of PSi and PC were calculated in GPAW [fig 1A]. The basic underlying mechanism of the zero-field phenomenon is the mixing of singlet and triplet states [4]-[5]. In most spin-dependent transport, two electron spins are involved, and thus one must consider each of their interactions with the field. We investigated the electronic and magnetic properties of 4H-SiC and 6H-SiC. The defect formation energy helps us determine what types of defects we are observing in the SiC EDMR experiment. They have very low formation energy (it is negative). The phosphorus substitution in 4H-SiC is a very stable defect. The band diagrams provide us with vital information about how the electronic properties of SiC (such as band gap) change as we add non-metal defects. The zero-field splitting parameters allow us to study the inflection point in the NZFMR [fig 1B]. We clearly observed zero-field splitting. We also noted that the zero-field splitting remained constant with changing bias. We aspect it zero-field splitting to remain constant while the hyperfine and exchange interaction perturbations shift under the influence of an external magnetic field. This is the essence of quantum magnetometry and self-calibration.

space plasma↗
NASA NTRS1982

Reduction of solar cell efficiency by bulk defects across the back-surface-field junction

The degradation of solar cell performance due to bulk defects distributed across the back-surface field junction is analyzed in terms of a three-region developed-perimeter model. Families of curves are computed and their physical significance is discussed in detail with reference to three parameters used to characterize the defects: defect area, defect density, and defect surface recombination velocity. A reduction in the open-circuit voltage due to the presence of a defect is expressed as a function of the defect area, density, cell thickness, and defect surface recombination velocity. Numerical examples are presented to illustrate the importance of the particular defect parameters.

Sah, C. T.↗
NASA NTRS2004

Identification and Control of Gravity Related Defect Formation During Melt Growth of Electro-Optic Single Crystals Bismuth Silicate(Bi12SiO20)

A research carried out under Award Number NAG8-1487 was aimed at to the design, conduct and analysis of experiments directed at the identification and control of gravitational effects on crystal growth, segregation and defect formation in the Sillenite system: bismuth silicate (Bi(12)SiO(20)). Correlation analyses was conducted in order to establish the influence of gravity related defects introduced during crystal growth on critical, application specific properties. Achievement of the states objective was conducted during the period from Feb. 01, 1998 to Dec. 31, 2003 with the following anticipated milestones: 1. Establishment of capabilities for (a) reproducible Czochralski and Bridgman-type growth of BSO single crystals and (b) for comprehensive analysis of crystalline and chemical defects as well as for selective property characterization of grown crystals (year 1). 2. Design and execution of critical space growth experiment(s) based on analyses of prefatory space results (experiments aimed at establishing the viability of planned approaches and procedures) and on unresolved issues related to growth, segregation and defect formation associated with conventional growth in Bridgman geometries. Comparative analysis of growth under conventional and under mu-g conditions; identification of gravity related defect formation during conventional Bridgman growth and formulation of approaches for their control (years 2 and 3). Development of charge confinement system which permits growth interface demarcation (in a mu-g environment) as well as minimization of confinement related stress and contamination during growth; design of complementary mu-g growth experiments aimed at quantitative mu-g growth and segregation analyses (year 4). 3. Conduct of quantitative mu-g growth experiments directed at: (a) identification and control of gravity related crystalline and chemical defect formation during single crystal growth of Bi(12)SiO(20) and at (b) defect engineering -the development of approaches to the controlled generation during crystal growth of specified point defects in homogeneous distribution (year 5). The proposed research places focus on a class of materials which have outstanding electrical and optical properties but have so far failed to reach their potential, primarily because of our inability to control adequately their stoichiometry and crystal defect formation as well as confinement related contamination and lattice stress.

Becia, Piotr↗
NASA NTRS2011

Fracture Mechanics Analyses of Subsurface Defects in Reinforced Carbon-Carbon Joggles Subjected to Thermo-Mechanical Loads

Coating spallation events have been observed along the slip-side joggle region of the Space Shuttle Orbiter wing-leading-edge panels. One potential contributor to the spallation event is a pressure build up within subsurface voids or defects due to volatiles or water vapor entrapped during fabrication, refurbishment, or normal operational use. The influence of entrapped pressure on the thermo-mechanical fracture-mechanics response of reinforced carbon-carbon with subsurface defects is studied. Plane-strain simulations with embedded subsurface defects are performed to characterize the fracture mechanics response for a given defect length when subjected to combined elevated-temperature and subsurface-defect pressure loadings to simulate the unvented defect condition. Various subsurface defect locations of a fixed-length substrate defect are examined for elevated temperature conditions. Fracture mechanics results suggest that entrapped pressure combined with local elevated temperatures have the potential to cause subsurface defect growth and possibly contribute to further material separation or even spallation. For this anomaly to occur, several unusual circumstances would be required making such an outcome unlikely but plausible.

Knight, Norman F., Jr.↗
NASA NTRS2004

Research Infusion Collaboration: Finding Defect Patterns in Reused Code

The 'Finding Defect Patterns in Reused Code' Research Infusion Collaboration was performed by Jet Propulsion Laboratory/Caltech under Contract 104-07-02.679 102 197 08.14.4. This final report describes the collaboration and documents the findings, including lessons learned.The research infusion collaboration characterized, using Orthogonal Defect Classification, defect reports for code that will be reused in mission-critical software on Deep Space Network Antenna controllers. Code reuse is estimated to be 90%, so it is important to identify systemic defects, or patterns, prior to reuse of this code. The work also identified ways to avoid certain types of defects and to test more efficiently.The primary objectives of the project were:to analyze defect patterns of the code to be reused based on the defects'Orthogonal Defect Classification (ODC)and to achieve a successful infusion of ODC to a project.

orthogonal defect classification (ODC)↗
NASA NTRS1977

Effects of defect recombination centers on radiation damage in solar cells

Defect production in silicon is modeled on a computer by solving a large system of rate equations. The model includes the main, known defects that are stable at operating temperatures of solar cells in outer space; most of these defects are secondary and tertiary defects. The preliminary result shows that the presence of defect recombination centers for primary defects (i.e., vacancy and interstitial) can effectively reduce the production rates of those stable defects and, consequentially, improve the lifetime of solar cells operating in radiation environment. The characteristics of the defect recombination center required for better solar cell performance along with prospective candidates are discussed.

Cheng, L. J.↗
NASA NTRS1990

An analysis of defect densities found during software inspections

Software inspection is a technical evaluation process for finding and removing defects in requirements, design, code, and tests. Detailed data was collected during the first three years of experience at JPL on 203 inspections. Statistics are discussed for this set of inspections. Included, on a per inspection basis, are averages of: staff time expended, pages covered, major defects found, minor defects found, and inspection team size. Analysis of variance showed a significantly higher density of defects during requirements inspections. It was also observed, that the defect densities found decreased exponentially as the work products approached the coding phase. Increasing the pace of the inspection meeting decreased the density of defects found. This relationship was observed to hold for both major and minor defect densities, although it was more pronounced for minor defects. Guidelines are provided for conducting successful software inspections based upon three years of JPL experience.

Kelly, John C.↗
NASA NTRS2013

Surface Inspection Tool for Optical Detection of Surface Defects

The Space Shuttle Orbiter windows were damaged both by micrometeor impacts and by handling, and required careful inspection before they could be reused. The launch commit criteria required that no defect be deeper than a critical depth. The shuttle program used a refocus microscope to perform a quick pass/fail determination, and then followed up with mold impressions to better quantify any defect. However, the refocus microscope is slow and tedious to use due to its limited field of view, only focusing on one small area of glass at a time. Additionally, the unit is bulky and unable to be used in areas with tight access, such as defects near the window frame or on the glass inside the Orbiter due to interference with the dashboard. The surface inspection tool is a low-profile handheld instrument that provides two digital video images on a computer for monitoring surface defects. The first image is a wide-angle view to assist the user in locating defects. The second provides an enlarged view of a defect centered in the window of the first image. The focus is adjustable for each of the images. However, the enlarged view was designed to have a focal plane with a short depth. This allows the user to get a feel for the depth of different parts of the defect under inspection as the focus control is varied. A light source is also provided to illuminate the defect, precluding the need for separate lighting tools. The software provides many controls to adjust image quality, along with the ability to zoom digitally the images and to capture and store them for later processing.

Nurge, Mark↗
NASA NTRS2013

Are Soft Short Tests Good Indicators of Internal Li-ion Cell Defects?

The self discharge test at full state of charge, may not be a good one to detect subtle defects since the li-ion chemistry has the highest self discharge at full state of charge. One should characterize self discharge versus storage time for each cell manufacturer/design to differentiate between normal self discharge and that due to a subtle manufacturing defect. The various soft short test methods indicate that if this test is carried out at full discharge (0% SOC) with all capacity removed (by lowering the current load in a stepwise manner to the same end of discharge voltage), then the cells need to be placed in storage for more than 72 hours to get a good analysis on the presence of subtle defects since it takes more than 72 hours to achieve voltage stabilization. If the cells are to be charged up even to a small percentage (ex. 1%), 72 hours are sufficient to determine issues. However, the pass/fail criteria should be based on a valid OCV decline. Less than 10 mV voltage decline is not a good method to detect subtle defects. As mentioned in the first bullet, self discharge is a competing reaction when a charge is introduced and hence a characterization of the self discharge versus storage time is required to fully correlate voltage decline to a failure due to a subtle defect. Soft short test method cannot be relied on for defect detection because cells with and without voltage decline seemed to have similar defects and characteristics. Screening methods such as internal resistance and capacity as well as a 3-sigma range for OCV, mass and dimensions should be used to screen out outliers. A very critical aspect in the understanding of subtle defects is to carry out destructive analysis of cells from every lot to confirm the quality of production and screen all cells and batteries in a stringent manner to have a high quality set of flight cells. Self Discharge Test: Fully charged cells shall be placed in Open circuit stand for 72 hours (OCV measurement twice a day); continue for total of 14 days with 1 reading per day 2. Soft Short Test 1: Fully charge; cells discharged to manufacturer's end of disch. Voltage (EODV) cutoff at C/5 rate; stand for 30 minutes; discharge with C/500 to the same EODV. stand for another 30 minutes; discharge the cells again using C/1000 current to the same EODV. OCV measurements twice a day for 72 hours and then for total of 14 days (data collection same as in 1.) 3. Soft Short Test 2: Fully charge; cells discharged to the manuf. EODV with a C/13 constant current; provide a 10 hour rest, discharge again to the same EODV with a current of C/250, provide a 10 hour rest, discharge again using a C/250 rate, provide a 24 hour rest, charge using C/250 to 3.15 V (for ~12 hours). OCV measurements twice a day for at 72 hours. (data collection same as in 1.) 4. Soft Short Test 3: Fully charge; cells shall be discharged using C/10 current to manuf. EODV. Allow the cell to remain at Open circuit for 10 seconds. Discharge the cell at C/20 rate to the same EODV, hold open circuit for 24 hours. Discharge the cells at C/200 rate to the same end of voltage cutoff and hold open circuit for 24 hours. Discharge the cells one more time at C/200 rate to the same EODV and hold open circuit for 36 hours. Charge at C/200 rate to 3.15 V and hold for 3 days. Record OCV during the open circuit stand periods every 12 hours and at the beginning and end of the 3 day hold (include the 12 hour OCV recording during this time also). Capacity Cycling: Cells with declining voltages - one cell from each manufacturer chosen for cycling Destructive Physical Analysis (DPA): Cells with and without decline chosen from each lot for DPA.

Jeevarajan, J.↗