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At least 19 records

Dislocation mechanism based model for stage II fatigue crack propagation rate

Repeated plastic deformation, which of course depends on dislocation mechanism, at or near the crack tip leads to the fatigue crack propagation. By involving the theory of thermally activated flow and the cumulative plastic strain criterion, an effort is made here to model the stage II fatigue crack propagation rate in terms of the dislocation mechanism. The model, therefore, provides capability to ascertain: (1) the dislocation mechanism (and hence the near crack tip microstructures) assisting the crack growth, (2) the relative resistance of dislocation mechanisms to the crack growth, and (3) the fracture surface characteristics and its interpretation in terms of the dislocation mechanism. The local microstructure predicted for the room temperature crack growth in copper by this model is in good agreement with the experimental results taken from the literature. With regard to the relative stability of such dislocation mechanisms as the cross-slip and the dislocation intersection, the model suggests an enhancement of crack growth rate with an ease of cross-slip which in general promotes dislocation cell formation and is common in material which has high stacking fault energy (produces wavy slips). Cross-slip apparently enhances crack growth rate by promoting slip irreversibility and fracture surface brittleness to a greater degree.

Mazumdar, P. K.↗

Fatigue crack propagation rate model based on a dislocation mechanism

It has been noted that the crack propagation exponent p for most metals usually varies between values of 2 and 4, and that the motion of dislocations plays an important part in determining the exponent p. Attention is presently given to the significance of the exponent p in terms of the motion of dislocations, in view of the theory of thermally activated plastic flow and the cumulative plastic strain concept for a failure criterion.

Mazumdar, P. K.↗

Midfit dislocation generation mechanisms in InGaAs/GaAs heterostructures

An experimental investigation of misfit dislocation generation mechanisms at an InGaAs/GaAs heterointerface is reported. InGaAs epitaxial layers were grown by low-pressure oragnometallic vapor-phase epitaxy on patterned and unpatterned GaAs substrate having etch-pit densities (EPD) of 200, 1400, and 10,000 cm(exp -2). After epitaxial growth, the samples were annealed at temperatures between 650 and 750 C, and analyzed by optical and transmission electron microscopy. For the range of substrate EPD studied, it was found that the substrate EPD controls the onset of misfit dislocation generation for low-temperature epitaxy (less than 600 C) on unpatterned substrates. When epilayers were annealed at 750 C, the density of misfit dislocations was independent of the substrate EPD. These studies also show that the dominant misfit dislocation generation mechanism for films grown on patterned substrates is nucleation at the growth-mesa edge. The density of preexisting threading dislocations has little influence on misfit dislocation generation for films selectively deposited within 100 x 100 sq micrometer growth windows. For selective heteroepitaxy, misfit dislocation generation strongly depends on the crystallographic orientation of the growth-mesa edge.

Kui, J.↗

Three-Dimensional Stress Fields and Slip Systems for Single Crystal Superalloy Notched Specimens

Single crystal superalloys have become increasingly popular for turbine blade and vane applications due to their high strength, and creep and fatigue resistance at elevated temperatures. The crystallographic orientation of a single crystal material greatly affects its material properties, including elastic modulus, shear modulus, and ductility. These directional properties, along with the type of loading and temperature, dictate an anisotropic response in the yield strength, creep resistance, creep rupture ductility, fatigue resistance, etc. A significant amount of research has been conducted to determine the material properties in the <001> orientation, yet the material properties deviating from the <001> orientation have not been assessed for all cases. Based on the desired application and design criteria, a crystal orientation is selected to yield the maximum properties. Currently, single crystal manufacturing is able to control the primary crystallographic orientation within 15 of the target orientation, which is an acceptable deviation to meet both performance and cost guidelines; the secondary orientation is rarely specified. A common experiment is the standard load-controlled tensile test, in which specimens with different orientations can be loaded to observe the material response. The deformation behavior of single-crystal materials under tension and compression is known to be a function of not only material orientation, but also of varying microdeformation (i.e. dislocation) mechanisms. The underlying dislocation motion causes deformation via slip, and affects the activation of specific slip systems based on load and orientation. The slip can be analyzed by observing the visible traces left on the surface of the specimen from the slip activity within the single crystal material. The goal of this thesis was to predict the slip systems activated in three-dimensional stress fields of a notched tensile specimen, as a function of crystal orientation, using finite element analysis without addressing microstructural deformation mechanisms that govern their activation. Out of three orientations tested, the specimen with a [110] load orientation and a [001] growth direction had the lowest maximum resolved shear stress; this specimen orientation appears to be the best design candidate for a tensile application.

Magnan, Shannon M.↗

Structure development in silicon sheet by shaped crystallization

Models are presented for the development of a parallel twinned structure of the 110 plane type and the 112 line type in silicon ribbons. The models are believed to be mutually compatible and operable. The first model relates the requirements for super-cooling during crystallization. The existence of reentrant angles associated with the twin structure is proposed to provide a rough interface to reduce super-cooling. The spacing of the twins is proposed to be limited by the geometrical relationship between the thermal gradient in the liquid and the dimensions of the twinned crystallization front. The second model relates the thermal stress configuration to detail dislocation reactions which would be expected to develop twins. While a specific dislocation mechanism cannot yet be defined, a number of alternatives are presented. All of these various dislocation mechanisms would result in the observed crystalline configuration and the choice among them is not critical.

Leipold, M. H.↗

Deformation mechanisms of NiAl cyclicly deformed near the brittle-to-ductile transition temperature

The intermetallic compound NiAl is one of many advanced materials which is being scrutinized for possible use in high temperature, structural applications. Stoichiometric NiAl has a high melting temperature, excellent oxidation resistance, and good thermal conductivity. Past research has concentrated on improving monotonic properties. The encouraging results obtained on binary and micro-alloyed NiAl over the past ten years have led to the broadening of NiAl experimental programs. The purpose of this research project was to determine the low cycle fatigue properties and dislocation mechanisms of stoichiometric NiAl at temperatures near the monotonic brittle-to-ductile transition. The fatigue properties were found to change only slightly in the temperature range of 600 to 700 K; a temperature range over which monotonic ductility and fracture strength increase markedly. The shape of the cyclic hardening curves coincided with the changes observed in the dislocation structures. The evolution of dislocation structures did not appear to change with temperature.

Cullers, Cheryl L.↗

Flow stress model in metal cutting

A model for the plastic deformation that occurs in metal cutting, based on dislocation mechanics, is presented. The model explains the fundamental deformation structure that develops during machining and is based on the well known Cottrell-Stokes Law, wherein the flow stress is partitioned into two parts; an athermal part which occurs in the shear fronts (or shear bands); and a thermal part which occurs in the lamella regions. The deformation envokes the presence of a cellular dislocation distribution which always exists in the material ahead of the shear process. This 'alien' dislocation distribution either exists in the metal prior to cutting or is produced by the compressive stress field which operates in front of the shear process. The magnitude of the flow stress and direction of the shear are shown to be correlated to the stacking fault energy of the metal being cut. The model is tested with respect to energy consumption rates and found to be consistent with observed values.

Black, J. T.↗

Time-dependent edge notch sensitivity of Inconel 718 sheet in the temperature range 900 to 1400 F (482 to 760 C)

Time-dependent notch sensitivity of Inconel 718 sheet occurred at 900 to 1200 F when notched specimens were loaded below the yield strength, and tests on smooth specimens showed that small amounts of creep consumed large fractions of creep-rupture life. The severity of the notch sensitivity decreased with decreasing solution treatment temperature and increasing time and/or temperature of the aging treatment. Elimination of the notch sensitivity was correlated with a change in the dislocation mechanism from shearing to by-passing precipitate particles.

Wilson, D. J.↗

Features controlling the early stages of creep deformation of Waspaloy

A model has been presented for describing primary and second stage creep. General equations were derived for the amount and time of primary creep. It was shown how the model can be used to extrapolate creep data. Applicability of the model was demonstrated for Waspaloy with gamma prime particle sizes from 75 - 1000 A creep tested in the temperature range 1000 - 1400 F (538 - 760 C). Equations were developed showing the dependence of creep parameters on dislocation mechanism, gamma prime volume fraction and size.

Ferrari, A.↗

Protein crystal growth in low gravity

The solubility and growth of the protein canavalin, and the application of the schlieren technique to study fluid flow in protein crystal growth systems were investigated. These studies have resulted in the proposal of a model to describe protein crystal growth and the preliminary plans for a long-term space flight experiment. Canavalin, which may be crystallized from a basic solution by the addition of hydrogen (H+) ions, was shown to have normal solubility characteristics over the range of temperatures (5 to 25 C) and pH (5 to 7.5) studies. The solubility data combined with growth rate data gathered from the seeded growth of canavalin crystals indicated that the growth rate limiting step is a screw dislocation mechanism. A schlieren apparatus was constructed and flow patterns were observed in Rochelle salt (sodium potassium tartrate), lysozyme, and canavalin. The critical parameters were identified as the change in density with concentration (dp/dc) and the change in index of refraction with concentration (dn/dc). Some of these values were measured for the materials listed. The data for lyrozyme showed non-linearities in plots of optical properties and density vs. concentration. In conjunction with with W. A. Tiller, a model based on colloid stability theory was proposed to describe protein crystallization. The model was used to explain observations made by ourselves and others. The results of this research has lead to the development for a preliminary design for a long-term, low-g experiment. The proposed apparatus is univeral and capable of operation under microprocessor control.

Feigelson, Robert S.↗

Growth rate study of canavalin single crystals

The dependence on supersaturation of the growth rate of single crystals of the protein canavalin is studied. In the supersaturation ranges studied, the rate-limiting step for growth is best described by a screw dislocation mechanism associated with interface attachment kinetics. Using a ln-ln plot, the growth-rate data is found to fit a predictive relationship of the form G = 0.012 x the supersaturation to the 6.66, which, together with the solubility curves, allows the growth rate to be estimated under a variety of conditions.

Demattei, R. C.↗

A Frequency-Dependent Q Model Based Upon Transient Rheological Properties of Heterogeneous Materials

Seismic attenuation at low frequency has previously been modeled using two approaches: (1) Examination of all possible microstructural dislocation mechanisms that involve irreversible thermodynamics [Minster and Anderson 1981, P. Trans. R.S. Lond, A, 299]; (2) Parameterized superposition of one-dimensional analogue springs and dashpots, usually consisting of a three-parameter standard linear solid arrangement [Liu et al. 1976, G.J.R.A.S., 47]. The first approach is appealing in that a strong connection is made between micromechanical dissipation and short-term creep that can be studied in the laboratory. The second approach has the advantage of providing a robust 'fit' to actual seismic observations, but has little intrinsic physical content...

Ivins, Erik R.↗

Time-dependent edge-notch sensitivity of oxide and gamma prime dispersion strengthened sheet materials at 1000 to 1800 F (538 - 982 C)

Research was carried out to determine whether an oxide dispersion hardened alloy, TD-Ni, Cr, and low volume fraction gamma prime strengthened nickel-base alloy, Modified Waspaloy, were susceptible to time-dependent edge-notch sensitivity. The results were evaluated in terms of the mechanical characteristics of the alloys and the dislocation motion mechanisms operative. As far as could be determined, the results of the investigation were consistent with the following important concepts developed for Waspaloy and Inconel 718: (1) Time-dependent edge-notch sensitivity occurs when notched specimens are loaded below the approximate 0.2 percent smooth specimen offset yield strength and when data from smooth specimens indicate that small amounts of creep consume large rupture life fractions. (2) When precipitate particles are sheared by dislocations, the deformation is localized and time-dependent notch sensitivity occurs. When dislocations by-pass precipitate particles the deformation is homogeneous. Under these conditions, no time-dependent notch sensitivity has been observed.

Wilson, D. J.↗

Dislocations: 75 years of Deformation Mechanisms

The selection of papers presented in this section reflect on themes to be explored at the "Dislocations: 75 years of Deformation Mechanisms" Symposium to be held at the Annual 2009 TMS meeting. The symposium was sponsored by the Mechanical Behavior of Materials Committee to give tribute to the evolution of a concept that has formed the basis of our mechanistic understanding of how crystalline solids plastically deform and how they fail.

Schneider, Judy↗

Elevated Temperature Deformation of Cr3Si Alloyed with Mo

Four-point bend, constant load compressive creep and constant engineering strain rate tests were conducted on arc-melted and powder-metallurgy (PM) processed Cr40Mo30Si30 specimens in the temperature range 1400 and 1700 K. This is a two phase alloy consisting of (CrMo)3Si and (Cr,Mo)5Si3 phases. The PM specimens, which were substantially weaker than the arc-melted materials, exhibited a stress exponent n, of about 2 and an apparent activation energy for creep, Q(sub 3), of 485 kJ/mol. The mechanism in these specimens appeared to be controlled by creep of a glassy phase. In the case of arc-melted specimens for which nis approximately 3 and Q(sub 3) is approximately 430 kJ/mol, the rate-controlling creep mechanism appeared to be that dominant in the (Cr,Mo)5Si3 phase. In this case, it is suggested that the Nabarro creep mechanism, where dislocation climb is controlled by Bardeen-Herring vacancy sources, is the dominant creep mechanism. Finally, an analysis of the present and literature data on Cr3Si alloyed with Mo appeared to suggest that the creep rate decreases sharply with an increase in the Mo/Si ratio.

Raj, S. V.↗

Tensile Creep of Polycrystalline Near-Stoichiometric NiAl

Long term tensile creep studies were conducted on binary NiAl in the temperature range 700-1200 K with the objectives of characterizing and understanding the creep mechanisms. Inverse and normal primary creep curves were observed depending on stress and temperature. It was concluded that the creep of NiAl is limited by dislocation mobility. The stress exponent for creep, n, increased from 5.5 at 1200 K to 13.9 at 700 K. The true activation energy for creep, Qc, was constant and equal to about 400 kJ per mole between 20 and 50 MPa but decreased to a constant value of 250 kJ per mole between 50 and 110 MPa. The activation energy was observed to be stress dependent above 110 MPa. The tensile creep results reported in this investigation were compared with compression creep data reported in the literature. A detailed discussion of the probable dislocation creep mechanisms governing compressive and tensile creep of NiAl is presented. It is concluded that the non-conservative motion of jogs on screw dislocations influenced the nature of the primary creep curves, where the climb of these jogs involves either the next nearest neighbor or the six-jump cycle vacancy diffusion mechanism. The probable nature of the atom vacancy exchange that occur within the core of an edge dislocation undergoing climb in NiAl are schematically examined.

Raj, Sai V.↗

Compression and Tensile Creep of Binary NiAl

Compression creep and long term tensile creep studies were conducted on cast and extruded binary NiAl in the temperature range 700-1200 K with the objectives of characterizing and understanding the creep mechanisms. Inverse and normal primary creep curves were observed in both compression and tension creep depending on stress and temperature although an asymmetrical response was observed under these two stress states. It was concluded that the primary creep of NiAl is limited by dislocation mobility. The stress exponents, n, for compression and tensile creep were similar varying between about 5 and 14. However, there were significant differences in the stress dependence of the activation energies for compression and tensile creep. The true activation energy for tensile creep, Q(sub c), was constant and equal to about 400 kJ/mol between 20 and 50 MPa but decreased to a constant value of 250 kJ/mol between 50 and 110 MPa. The activation energy was observed to be inversely stress dependent above 110 MPa. In contrast, Q(sub c) = 300 kJ/mol for compression creep was constant between 25 and 70 MPa and inversely dependent on the true stress above 70 MPa. A detailed discussion of the probable dislocation creep mechanisms governing compressive and tensile creep of NiAl is presented. It is concluded that the non-conservative motion of jogs on screw dislocations influenced the nature of the primary creep curves, where the climb of these jogs involves either the next nearest neighbor or the six-jump cycle vacancy diffusion mechanism. The probable natures of the atom-vacancy exchange that occur within the core of an edge dislocation undergoing climb in NiAl are schematically examined.

Raj, Sai V.↗