Gate-Defined Quantum Dots in Ge/SiGe Quantum Wells as a Platform for Spin Qubits.
Abstract not provided.
Hardy, Will↗
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Molecular Ligands Control Superlattice Structure and Crystallite Orientation in Colloidal Quantum Dot Solids
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Santra, Pralay K.↗
Theoretical Kinetics Analysis for $\dot{H}$ Atom Addition to 1,3-Butadiene and Related Reactions on the $\dot{C}$ 4 H 7 Potential Energy Surface
The oxidation chemistry of the simplest conjugated hydrocarbon, 1,3-butadiene, can provide a first step in understanding the role of poly-unsaturated hydrocarbons in combustion and, in particular, an understanding of their contribution towards soot formation. Based on our previous work on propene and the butene isomers (1-, 2- and isobutene), it was found that the reaction kinetics of H-atom addition to the C=C double bond plays a significant role in fuel consumption kinetics and influences the predictions of high-temperature ignition delay times, product species concentrations and flame speed measurements. In this study, the rate constants and thermodynamic properties for $\dot{H}$-atom addition to 1,3-butadiene and related reactions on the $\dot{C}$ 4 H 7 potential energy surface have been calculated using two different series of quantum chemical methods and two different kinetic codes. Excellent agreement is obtained between the two different kinetics codes. The calculated results including zero point energies, single point energies, rate constants, barrier heights and thermochemistry are systematically compared among the two quantum chemical methods. 1-methylallyl ($\dot{C}$ 4 H 7 1-3) and 3-buten-1- yl ($\dot{C}$ 4 H 7 1-4) radicals and C 2 H 4 + $\dot{C}$2H3 are found to be the most important channels and reactivity promoting products, respectively. We calculated that terminal addition is dominant (> 80%) compared to internal $\dot{H}$-atom addition at all temperatures in the range 298 – 2000 K. However, this dominance decreases with increasing temperature. The calculated rate constants for the bimolecular reaction C 4 H 6 + $\dot{H}$ → products and C 2 H 4 + $\dot{C}$ 2 H 3 → products are in excellent agreement with both experimental and theoretical results from the literature. For selected C 4 species the calculated thermochemical values are also in good agreement with literature data. In addition, the rate constants for H-atom abstraction by $\dot{H}$ atoms have also been calculated, and it is found that abstraction from the central carbon atoms is the dominant channel (> 70%) at temperatures in the range 298 – 2000 K. Lastly, by incorporating our calculated rate constants for both H-atom addition and abstraction into our recently developed 1,3-butadiene model, we show that laminar flame speed predictions are significantly improved, emphasizing the value of this study.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Improving Solar Cell Performance Using Quantum Dot Triad Charge-Separation Engines
Here, we use kinetic modeling to explore the current–voltage, power–voltage, and power conversion efficiency characteristics of quantum dot dyads and triads as possible light absorption and charge separation engines in quantum dot, bulk heterojunction solar cells. The external and internal power conversion quantum efficiencies are significantly enhanced by introducing a third quantum dot between the donor and acceptor quantum dots. Given the constraint of comparable charge-recombination and charge-separation rates, open-circuit voltages for triads are predicted to be about 10%–17% larger than those for dyads, and short-circuit currents for triads are about 400% larger than those for dyads. These improvements in the efficiencies can be further enhanced by tuning the band-edge energy offset of the middle-position quantum dot from its neighbors. The band-edge energies of the middle quantum dot should be tuned so that they form a cascading band-edge energy alignment from the band-edge energies of the left CdTe QD to the right CdSe QD. To produce the most favorable solar cell performance, the middle quantum dot’s conduction (valence) band edge should be closer to the right quantum dot’s band edge when the charge recombination rates are low (high) and near the conduction (valence) band edge of the left quantum dot when the charge recombination rates are high (low). This analysis identifies prime strategies to design multi-QD assemblies for solar energy harvesting and conversion.
36 MATERIALS SCIENCE↗
Synthesis, Applications and Potential Photoluminescence Mechanism of Spectrally Tunable Carbon Dots
Due to the prominent characteristics of carbon-based luminescent nanostructures (known colloquially as carbon dots), such as inexpensive precursors, excellent hydrophilicity, low toxicity, and intrinsic fluorescence, these nanomaterials are regarded as potential candidates to replace traditional quantum dots in some applications. As such, research in the field of carbon dots has been increasing in recent years. In this mini-review, we summarize recent progress in studies of multicolor carbon dots focusing on potential photoluminescence mechanisms, strategies for effective syntheses, and applications in ion/molecule and temperature sensing, and high-resolution bioimaging techniques.
Zhi, Bo↗
Effects of insertion loss, laser profile and inhomogeneity of dots distribution on properties of all-optical modulator based on GaN/AlN quantum dots
This paper reports the effects of insertion loss, laser profile and inhomogeneity of dots distribution on properties of an all-optical modulator based on spherical quantum dot. The aim of this paper is to give a quantitative description for the variation of main properties of an all-optical quantum dot modulator such as, absorption, transmission and modulation depth regard to insertion loss, laser profile and inhomogeneity of dots. To realize these points, first, we extract the field distribution in optical fiber and channel waveguide (modulator) which are defined by their structure characteristics and boundary conditions. Using the electric field equations, input coupling efficiency and insertion loss and also role of laser profile are observable. Finally we investigate the effect of size distribution and inhomogeneity of quantum dots on the modulator performance. In this structure we used electromagnetically induced transparency (EIT) in GaN/AlN structure, associated with inter-sublevel transitions.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Characterization of dot-specific and tunable effective g factors in a GaAs/AlGaAs double quantum dot single-hole device
Difference in g factors in multidot structures can form the basis of dot-selective spin manipulation under global microwave irradiation. Here employing electric dipole spin resonance facilitated by strong spin-orbit interaction (SOI), we observe differences in the extracted values of the single-hole effective g factors of the constituent quantum dots of a GaAs/AlGaAs double quantum dot device at the level of ~ 5 %–10%. We examine the continuous change in the hole g factor with electrical detuning over a wide range of interdot tunnel couplings and for different out-of-plane magnetic fields. The observed tendency of the quantum dot effective g factors to steadily increase on decreasing the interdot coupling or on increasing the magnetic field is attributed to the impact on the SOI of changing the dot confinement potential and heavy-hole light-hole mixing.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Dot-in-Well Quantum-Dot Infrared Photodetectors
Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.
Gunapala, Sarath↗
Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate
InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.
InAs quantum dot↗
Coherent single-photon emission from colloidal lead halide perovskite quantum dots
Chemically made colloidal semiconductor quantum dots have long been proposed as scalable and color-tunable single emitters in quantum optics, but they have typically suffered from prohibitively incoherent emission. We now demonstrate that individual colloidal lead halide perovskite quantum dots (PQDs) display highly efficient single-photon emission with optical coherence times as long as 80 picoseconds, an appreciable fraction of their 210-picosecond radiative lifetimes. These measurements suggest that PQDs should be explored as building blocks in sources of indistinguishable single photons and entangled photon pairs. Our results present a starting point for the rational design of lead halide perovskite–based quantum emitters that have fast emission, wide spectral tunability, and scalable production and that benefit from the hybrid integration with nanophotonic components that has been demonstrated for colloidal materials.
solar (photovoltaic), solid state lighting, photos↗
Asymmetrically strained quantum dots with non-fluctuating single-dot emission spectra and subthermal room-temperature linewidths
The application of colloidal semiconductor quantum dots as single-dot light sources still requires overcoming several challenges. Recently, there has been considerable progress in suppressing intensity fluctuations (blinking) by encapsulating an emitting core into a thick protective shell. However, these nanostructures still show considerable fluctuations in both emission energy and linewidth. Here we demonstrate type-I core/shell heterostructures that overcome these deficiencies. They are made by combining wurtzite semiconductors with a large, directionally anisotropic lattice mismatch, which results in strong asymmetric compression of the emitting core. This modifies the structure of band-edge excitonic states and leads to accelerated radiative decay, reduced exciton-phonon interactions, and suppressed coupling to fluctuating electrostatic environment. As a result, individual asymmetrically strained dots exhibit highly stable emission energy (<1 meV standard deviation) and a subthermal room-temperature linewidth (~20 meV), concurrent with nearly nonblinking behaviour, high emission quantum yields, and a widely tunable emission colour.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels
The optical properties of InAs quantum dots (QDs) embedded in a GaAsSb matrix with different delta (d)-doping levels of 0, 2, 4, and 6 electrons per dot (e-/dot), incorporated to control the occupation of QD electronic states, are studied by photoluminescence (PL) spectroscopy. The time-resolved PL data taken at 10 K reveal that the increase of δ-doping density from 2 to 6 e - /dot decreases the recombination lifetime of carriers at ground states of the QDs from 996 ± 36 to 792 ± 19 ps, respectively. Furthermore, the carrier lifetime of the sample with 4 e - /dot is found to increase at a slower rate than that of the undoped sample as temperature increases above 70 K. An Arrhenius plot of the temperature dependent PL intensity indicates that the thermal activation energy of electrons in the QDs, required for carrier escape from the dot ground state to continuum state, is increased when the d-doping density is high enough (>4 e - /dot). These results are attributed to the enhanced Coulomb interaction of electrons provided by the d-doping, leading to reduced thermal quenching of the PL.
14 SOLAR ENERGY↗
Single and double hole quantum dots in strained Ge/SiGe quantum wells
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin–orbit coupling strength, and absence of valley states. We use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling between two adjacent quantum dots. The hole effective mass in these undoped structures, m* ~ 0.08 m 0 , is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit–qubit interactions in an industry-compatible semiconductor platform.
36 MATERIALS SCIENCE↗
Tandem luminescent solar concentrators based on engineered quantum dots
Luminescent solar concentrators (LSCs) can serve as large-area sunlight collectors for terrestrial and space-based photovoltaics. Due to their high emission efficiencies and readily tunable emission and absorption spectra, colloidal quantum dots have emerged as a new and promising type of LSC fluorophore. Spectral tunability of the quantum dots also facilitates the realization of stacked multilayered LSCs, where enhanced performance is obtained through spectral splitting of incident sunlight, as in multijunction photovoltaics. Here, we demonstrate a large-area (>230 cm 2 ) tandem LSC based on two types of nearly reabsorption-free quantum dots spectrally tuned for optimal solar-spectrum splitting. This prototype device exhibits a high optical quantum efficiency of 6.4% for sunlight illumination and solar-to-electrical power conversion efficiency of 3.1%. In conclusion, the efficiency gains due to the tandem architecture over single-layer devices quickly increase with increasing LSC size and can reach more than 100% in structures with window sizes of more than 2,500 cm 2 .
14 SOLAR ENERGY↗
14.1% CsPbI3 Perovskite Quantum Dot Solar Cells via Cesium Cation Passivation
Surface manipulation of quantum dots (QDs) has been extensively reported to be crucial to their performance when applied into optoelectronic devices, especially for photovoltaic devices. In this work, an efficient surface passivation method for emerging CsPbI3 perovskite QDs using a variety of inorganic cesium salts (cesium acetate (CsAc), cesium idodide (CsI), cesium carbonate (Cs2CO3), and cesium nitrate (CsNO3)) is reported. The Cs-salts post-treatment can not only fill the vacancy at the CsPbI3 perovskite surface but also improve electron coupling between CsPbI3 QDs. As a result, the free carrier lifetime, diffusion length, and mobility of QD film are simultaneously improved, which are beneficial for fabricating high-quality conductive QD films for efficient solar cell devices. After optimizing the post-treatment process, the short-circuit current density and fill factor are significantly enhanced, delivering an impressive efficiency of 14.10% for CsPbI3 QD solar cells. In addition, the Cs-salt-treated CsPbI3 QD devices exhibit improved stability against moisture due to the improved surface environment of these QDs. These findings will provide insight into the design of high-performance and low-trap-states perovskite QD films with desirable optoelectronic properties.
14 SOLAR ENERGY↗
Comparison of carrier localization effects between InAs quantum dashes and quantum dots in a DWELL (dashes- or dots-in-a-well) configuration
The optical properties of InAs quantum dashes (QDashes) grown on InP and InAs quantum dots (QDots) grown on GaAs in a dashes- or dots-in-a-well (DWELL) configuration are comparatively investigated using temperature-dependent photoluminescence (PL) measurements. The trends in PL characteristics such as exciton energy, spectral bandwidth and integrated intensity with respect to temperature are found to be distinctly dissimilar between the two systems. A rate-equation model involving exciton recombination and thermal transfer in a localized-state ensemble is used to quantitively interpret the experimental data. The results of this study suggest that QDashes in this configuration exhibit PL properties more consistent with a lower degree of carrier localization compared to QDots. A preliminary structural analysis highlighting the shape/size differences between the two nanostructures is also presented.
carrier localization↗