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Results for “Double pulse test (DPT)”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Improved Double Pulse Test for Accurate Dynamic Characterization of Medium Voltage SiC Devices

This article presents an improved double pulse test (DPT) for accurate dynamic characterization of the medium voltage (MV) silicon carbide device. The difference between low voltage (LV) and MV DPT setup grounding is first introduced, which results in different measurement considerations. Then, parasitic capacitances in the DPT and their impact on the DPT are discussed considering different grounding points and device connections. Approaches are proposed to minimize the impact of parasitic capacitances on DPT results. In addition, the impact of switching V-I timing alignment on the testing results is discussed, compared to that in the LV DPT; a V-I alignment approach is introduced for the MV DPT. A 10 kV/20 A SiC mosfet -based DPT is taken as an example of the improved DPT, and test results show that it can minimize the impact from parasitic and improve the accuracy of the device switching loss estimation.

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DOE OSTI2021

Performance Evaluation and Loss Modeling of WBG Devices based on a Novel Double-Pulse Test Method for Current Source Inverter

Careful measurements of the power device characteristics are necessary to accurately estimate a power converter's losses and efficiency. The conventional double-pulse test (DPT) circuit is a well-known method to implement this laboratory characterization of power devices and power modules. However, the switching characteristics of a power device depend on the power electronics circuit in which it is connected as well as the power circuit's physical layout, in addition to the device's internal structure. Hence, the conventional DPT circuit configuration, which is tailored for a standard voltage-source inverter (VSI), is not well-suited for a current-source inverter (CSI). This paper demonstrates a previously-proposed CSI-based DPT measurement technique that is appropriate for normal CSI operation. The characteristics of SiC MOSFETs and series-connected SiC Schottky diodes used in a CSI are measured using this improved technique while taking temperature effects into account to yield more accurate loss predictions. The CSI losses, including the switching and conduction losses of SiC MOSFETs and SiC Schottky diodes, have been modeled using this approach. The total CSI losses and efficiency have been estimated based on the CSI DPT results and loss models.

42 ENGINEERING↗
DOE OSTI2021

Comprehensive Efficiency Analysis of Current Source Inverter Based on CSI-Type Double Pulse Test and Genetic Algorithm

A current-source inverter (CSI) has a natural output voltage boost feature that can be advantageous for traction applications. Switching frequency is one of the easily-controlled variables that can be adjusted to improve the CSI efficiency at different operating points when the boost function is used. This paper investigates a CSI-based double-pulse test (DPT) measurement that mimics normal operation of the CSI. A loss model of the CSI is developed based on the CSI-type DPT experimental results. The impacts of the switching frequency and voltage boost ratio on the CSI efficiency and output voltage ripple are investigated. Based on the loss model, a genetic algorithm has been introduced that makes it possible to optimize the CSI's switching frequency and modulation index to maximize its efficiency under any desired operating condition.

current-source inverter, genetic algorithm, SPM ma↗
DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗
DOE OSTI2023

Topological Equivalence of VSI and CSI Commutation Cells and Its Application to Switching Resonance Analysis and Damper Design

This paper proposes the concept of the topological equivalence between the commutation cells of a voltage source inverter (VSI) and a current source inverter (CSI) using duality and equivalent circuit transformation techniques. A switching resonance of CSI is analyzed and an effective three-phase RC damper is derived from the dc-link RC damper of VSIs based on the topological equivalence of the VSI and CSI commutation cells. Furthermore, a new three-phase RC damper design framework utilizing the topological equivalence is proposed. Here, experimental results verify that the proposed three-phase RC damper design for CSI significantly reduces the switching resonance and improves the CSI’s output waveform total harmonics distortions (THDs).

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