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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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17 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Novel design for a polarizing DUV spectrometer using a Wollaston prism and its application as a diagnostic for measuring Thomson scattering data in the presence of strong self-emission backgrounds

We present a novel design for an optical spectrometer for use in ultraviolet Thomson scattering measurements of plasma parameters in high energy density (HED) inertial confinement fusion experiments on large-scale high-energy laser facilities. In experiments investigating high-Z plasmas, the fidelity of measurements is commonly limited by signal/background ratios approaching or exceeding unity. An alpha barium borate Wollaston prism can provide both spectral dispersion and polarization channel separation, allowing simultaneous measurement of both the Thomson scattering signal and plasma self-emission along a single line of sight and in a single experiment, which should greatly improve data quality and reduce the opportunity cost of taking high quality measurements. Here, we present a basic discussion of the design and a worked example of an instrument designed to take fourth harmonic electron plasma wave measurements in HED experiments at the OMEGA laser facility.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

High power picosecond green and deep ultraviolet generations with an all-fiberized MOPA

We demonstrate high power picosecond green and deep ultraviolet (DUV) lasers based on an all-fiberized master oscillator power amplifier (MOPA). The main power amplifier is fabricated with a highly Yb-doped large mode area (LMA) silicate glass fiber. It delivers 75.2-W laser output at 1029 nm with a pulse repetition rate of 10 MHz and a pulse duration of 70 ps. With a lithium triborate (LBO) crystal, a 43.0-W green output at 514.5 nm has been achieved with a pulse duration of 55 ps. With a caesium lithium borate (CLBO) crystal, a 14.5-W picosecond DUV output at 257 nm has been generated, which is the highest power for the all-fiber based DUV laser, to the best of our knowledge.

Pan, Lei (ORCID:0000000288896117)↗
DOE OSTI2025

Spectral broadening and pulse shaping in the deep ultraviolet

Here, we report the generation and shaping of ∼20 femtosecond pulses in the deep ultraviolet (DUV). Our approach combines spectral broadening in a stretched hollow-core fiber with compression and shaping via an acousto-optic modulator-based pulse shaper. The pulse shaper allows for automatic compression, useful for in-air delivery of pulses to two-dimensional (2D) spectroscopy and other time-resolved experiments. Unlike previous DUV pulse generation schemes that lack phase stability, our method enables programmable generation of phase-locked pulse-pairs with attosecond-level stability. We demonstrate pulse characterization via self-diffraction frequency-resolved optical gating and dispersion scan methods in the DUV and validate performance through a pump-probe experiment resolving electronic dynamics on attosecond timescales.

Codere, Julia [Stony Brook Univ., NY (United State↗
DOE OSTI2024

Strategically designed metal-free deep-ultraviolet birefringent crystals with superior optical properties

Finding new birefringent materials with deep-ultraviolet (DUV, λ < 200 nm) transparency is urgent, as current commercial materials cannot meet the rapidly growing demands in related application fields. Herein, three guanidinium-based compounds, C(NH 2 ) 3 CH 3 SO 3 , β-C(NH 2 ) 3 Cl, and γ-C(NH 2 ) 3 Cl, all featuring [C(NH 2 ) 3 ·X] ∞ (X = CH 3 SO 3 and Cl) pseudo layers, were designed through structural motif tailoring. Theoretical calculations indicate that these metal-free compounds all possess broad bandgaps (6.49–6.71 eV, HSE06) and remarkable birefringence (cal. 0.166–0.211 @ 1064 nm). Centimeter-sized C(NH 2 ) 3 CH 3 SO 3 crystals have been grown using a feasible aqua-solution method. Subsequently, to further optimize the properties, β/γ-C(NH 2 ) 3 Cl was remolded by further tailoring the [C(NH 2 ) 3 ] + cationic unit and the acceptor Cl - anion, and then the fourth compound NH 2 COF was theoretically constructed. Interestingly, NH 2 COF exhibits the desired coexistence of a wider bandgap (7.87 eV, HSE06) and giant birefringence (cal. 0.241 @ 1064 nm) attributed to its higher density of well-aligned birefringence-active groups (BAGs). Furthermore, among these four designed compounds, C(NH 2 ) 3 CH 3 SO 3 has been experimentally synthesized and exhibits a short UV cutoff edge. Centimeter-sized crystals have been grown using a feasible aqueous solution method. This study provides an effective strategy to optimize the density of BAGs for large birefringence and offers valuable insights into the strategic design of metal-free DUV birefringent crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Relative Contributions of sc-DER, mel-DER, Color Rendition, Chromaticity, and Illuminance to Spatial Brightness Perception

An experiment was conducted to examine spectrally based factors that contribute to the visual perception of interior environments, with a focus on brightness perception. Thirty-two participants evaluated 60 different lighting scenes in a mock office. The lighting spectral power distributions varied systematically in illuminance, chromaticity (CCT and Duv), s cone opic daylight efficacy ratio (sc-DER), melanopic daylight efficacy ratio (mel-DER), and color rendition (R f , R g , and R cs,h1 ). At the operationalized levels of these variables, illuminance had the largest effect on brightness perception. Notably, the second largest effect was due to changes in red chroma (R cs,h1 ). The effect of sc-DER was also statistically significant but was a tertiary effect. The effects of mel-DER, CCT, and Duv were not statistically significant. This large effect of red chroma is consistent with the existing understanding that changes in color perception are often perceived when illuminance changes. In conclusion, with appropriate changes in color rendition and other factors held constant, spatial brightness perception was preserved through a decrease from 500 lux to 250 lux.

42 ENGINEERING↗
DOE OSTI2024

Deep-ultraviolet transparent conducting SrSnO 3 via heterostructure design

Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO 3 /La:SrSnO 3 /GdScO 3 (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO 3 from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO 3 . This led to a modulation of carrier density from 10 18 to 10 20 cm −3 , with room temperature mobilities ranging from 40 to 140 cm 2 V −1 s −1 . The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime.

Science & Technology - Other Topics↗
DOE OSTI2023

Computationally-driven discovery of second harmonic generation in EuBa 3 (B 3 O 6 ) 3 through inversion symmetry breaking

Nonlinear optical (NLO) crystals with superior properties are significant for advancing laser technologies and applications. Introducing rare earth metals to borates is a promising and effective way to modify the electronic structure of a crystal to improve its optical properties in the visible and ultraviolet range. In this work, we computationally discover inversion symmetry breaking in EuBa 3 (B 3 O 6 ) 3 , which was previously identified as centric, and demonstrate noncentrosymmetry via synthesizing single crystals for the first time by the floating zone method. We determine the correct space group to be P 6¯. The material has a large direct bandgap of 5.56 eV and is transparent down to 250 nm. The complete anisotropic linear and nonlinear optical properties were also investigated with a d 11 of ∼0.52 pm/V for optical second harmonic generation. Further, it is Type I and Type II phase matchable. This work suggests that rare earth metal borates are an excellent crystal family for exploring future deep ultraviolet (DUV) NLO crystals. It also highlights how first principles computations combined with experiments can be used to identify noncentrosymmetric materials that have been wrongly assigned to be centrosymmetric.

He, Jingyang (ORCID:0000000238863659)↗
DOE OSTI2022

Improved Method for Evaluating and Specifying the Chromaticity of Light Sources

This article recommends a method for calculating and specifying light source chromaticity using the CIE 2015 10° color matching functions (CMFs), which, according to analysis of existing psychophysical experiment data, can reduce visual mismatch compared to specifications based on the traditional CIE 1931 2° CMFs. Specifically, this work evaluates, documents, and recommends for adoption a supporting system of measures to be used with the CIE 2015 10° CMFs: a new uniform chromaticity scale (UCS) diagram with coordinates (s, t), a measure of correlated color temperature (CCTst), and a measure of distance from the Planckian locus (Dst). It also presents options for updating nominal classification quadrangles. A complete method of this nature has not yet been standardized, which may be contributing to the slow uptake of the CIE 2015 CMFs. The proposed tools are analogous to u, v, CCT, Duv, and the ANSI C78.377 nominal classification quadrangles that are currently specified in the CIE 1960 UCS using the CIE 1931 2° CMFs. While conceptually equivalent, the differences between the current standard method and the new st system are important for reducing unintended mismatch in the chromaticity of light. Furthermore, the implications of changing chromaticity specification methods are identified by a comparison over a diverse set of real light source SPDs. Finally, as a step toward improving the design and specification of light sources for illumination purposes, we propose a process for implementing the recommendations.

42 ENGINEERING↗
DOE OSTI2020

Hexagonal boron nitride: Epitaxial growth and device applications

As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce h-BN epilayers with high hexagonal phase purity, UV transparency, and film stoichiometry by employing nitrogen-rich growth conditions. The quasi-2D nature of h-BN supports unusually strong optical transitions near the band edge and a large exciton binding energy on the order of 0.7 eV. Since the isotope of B-10 has a large capture cross-section for thermal neutrons, h-BN is an ideal material for the fabrication of solid-state neutron detectors for special nuclear materials detection, well and geothermal logging, and medical imaging applications. Freestanding B-10 enriched h-BN (h- 10 BN) epilayers with varying thicknesses up to 200 μm have been successfully synthesized by metal organic chemical vapor deposition (MOCVD) as of this writing. By utilizing the conductivity anisotropy nature of h-BN, 1 cm 2 lateral detectors fabricated from 100 μm thick h-10BN epilayers have demonstrated a detection efficiency of 59% for thermal neutrons, which is the highest on record among all solid-state neutron detectors as of today. It was noted that high growth temperatures, long growth times and the use of sapphire substrate tend to incorporate oxygen related impurities into h- 10 BN epilayers, which strongly impacted the carrier mobility-lifetime (μτ) products and charge collection efficiencies of h- 10 BN neutron detectors. As the h-BN material technology further develops, improved carrier mobilities and μτ products will allow the fabrication of h-BN devices with enhanced performance.

42 ENGINEERING↗
DOE OSTI2020

New Insights into the Charge-Transfer-to-Solvent Spectrum of Aqueous Iodide: Surface versus Bulk

Liquid phase charge-transfer-to-solvent (CTTS) transitions are important, as they serve as photochemical routes to solvated electrons. Here in this work, broadband deep-ultraviolet electronic sum frequency generation (DUV-ESFG) and two-photon absorption (2PA) spectroscopic techniques were used to assign and compare the nature of the aqueous iodide CTTS excitations at the air/water interface and in bulk solution. In the one-photon absorption (1PA) spectrum, excitation to the 6s Rydberg-like orbital (5p → 6s) gives rise to a pair of spin–orbit split iodine states, 2 P 3/2 and 2 P 1/2 . In the 2PA spectra, the lower-energy 2 P 3/2 peak is absent and the observed 2PA peak, which is ~0.14 eV blue-shifted relative to the upper 2 P 1/2 CTTS peak seen in 1PA, arises from 5p → 6p electronic promotion. The band observed in the ESFG spectrum is attributed to mixing of excited states involving 5p → 6p and 5p → 6s promotions caused by both vibronic coupling and the external electric field generated by asymmetric interfacial solvation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Modifications in the charge trap landscape in Hf 0.5 Zr 0.5 O 2 as a function of oxygen vacancy concentration observed with photoemission electron microscopy

Oxygen vacancies in Hf x Zr (1-x) O 2 (HZO) both contribute to stabilization of the ferroelectric orthorhombic phase and promote leakage pathways that limit the endurance of devices based on the material. Here, for this reason, the defect states of oxygen vacancies were investigated using photoemission electron microscopy (PEEM) and photoluminescence spectroscopy (PL), as their concentration was varied via ex situ laser exposure. Following a controlled oxygen vacancy reduction via visible (2.54 eV) laser dosing of HZO, deep-ultraviolet (DUV, 5.82 eV) PEEM was used to spatially probe the resulting mid-gap defect states and work function. Work function was found to increase monotonically with the laser-induced reduction in oxygen vacancy concentration culminating in a total increase near 70 meV. The change implies a Fermi level shift toward the valence band as the total available electron-filled charge states are reduced with the removal of oxygen vacancies. A reduction in charge states is corroborated by the observed lessening of both photoemission and photoluminescence intensities after laser dosing. The deduced position of the Fermi level is within a band of near-conduction band defect states produced by oxygen vacancies that are linked to endurance limiting leakage currents. Together, these results directly identify the primary role of oxygen vacancies on the defect states in HZO while demonstrating that laser exposure can be used for their modification.

42 ENGINEERING↗
DOE OSTI2023

Development of a Low-Cost, Sensitivity-Optimized Fluorescence Sensor for Visible Spectrum Analysis

This paper presents an economically viable, sensitivity-optimized fluorescence sensor for detecting low concentrations of fluorophores in the visible spectrum range. The sensor employs a deep ultraviolet (DUV) 275-nm LED and a dichroic mirror to establish a co-axial optical path for excitation and emission. Instead of utilizing a general-purposed spectrometer optimized for high spectral resolution, the sensor strikes a balance between resolution and sensitivity by using an appropriate aperture size and optimized optical design tailored for the spectral characteristics of fluorophores. Here, the manuscript demonstrates measurements of ppb-level rare earth element (REE) samples containing terbium (Tb), europium (Eu), dysprosium (Dy), and samarium (Sm) in aqueous solutions. Through balanced design that optimizes collection of fluorescence emission without losing spectral information, this work shows the feasibility of developing a low-cost, compact, and highly sensitive fluorescence sensors with improved detection sensitivity when compared to bench-top commercial spectrofluorometers at far higher costs.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

High-precision monitoring of outgassing species in model extreme ultraviolet photoresists with a cavity ring-down spectrometer

Background Extreme ultraviolet (EUV) photoresists play a pivotal role in advancing nanopatterning technologies by balancing image quality and sensitivity. The outgassing behavior of photoresist thin films under EUV and deep ultraviolet (DUV) exposure reveals chemical details relevant to their performance. Aim Here, we focus on utilizing an analytical technique not previously used in photolithography, the tabletop cavity ring-down spectrometer, to investigate outgassing dynamics in EUV photoresists, enabling precise chemical identification and deeper insights into resist processing. Approach The spectrometer’s enhanced laser path length (∼ 20 km) and broadband absorption capabilities in the C–H overtone region allow for sensitive and temporally resolved detection of mixtures of outgassed species. Using a model resist comprising a polymer matrix with a photoacid generator and quencher, we analyzed the influence of time delays between exposure and post-exposure bake (PEB) as well as storage under varying environmental conditions. Results Suppression of isobutylene outgassing and thickness loss was observed with extended delays between exposure and PEB, potentially linked to water absorption and acid deactivation. The technique proved highly effective in distinguishing subtle chemical differences between processing stages. Conclusions Delay times and their environmental conditions, particularly humidity, reduce outgassing and thickness loss of photoresists during PEB, suggesting decreased acid-driven deprotection. This can potentially impact sensitivity, defectivity, and roughness of resist patterns, necessitating precise monitoring and control.

Extreme ultraviolet photoresists↗
DOE OSTI2025

High precision monitoring of outgassing species in model EUV photoresists with a cavity ring-down spectrometer

Extreme ultraviolet (EUV) photoresists play a pivotal role in advancing nanopatterning technologies by balancing image quality and sensitivity. The outgassing behavior of photoresist thin films under EUV and deep ultraviolet (DUV) exposure reveals chemical details relevant to their performance. This study focuses on utilizing an analytical technique not previously used in photolithography, the tabletop cavity ring-down spectrometer, to investigate outgassing dynamics in EUV photoresists, enabling precise chemical identification and deeper insights into resist processing. The spectrometer’s enhanced laser path length (~20 km) and broadband absorption capabilities in the CH overtone region allow for sensitive and temporally resolved detection of outgassed species. Using a model resist comprising a polymer matrix with a photoacid generator and quencher, we analyzed the influence of time delays between exposure and Post-Exposure Bake (PEB) as well as storage under varying environmental conditions. Suppression of isobutylene outgassing and thickness loss was observed with extended delays between exposure and PEB, potentially linked to water absorption and acid deactivation. The technique proved highly effective in distinguishing subtle chemical differences between processing stages. Delay times and their environmental conditions, particularly humidity, reduce outgassing and thickness loss of photoresists during PEB, suggesting decreased acid-driven deprotection. This can potentially impact sensitivity, defectivity, and roughness of resist patterns, necessitating precise monitoring and control.

Lüttgenau, Bernhard↗
DOE OSTI2021

Phase-shifted Bragg gratings in a foundry silicon nitride platform

Bragg gratings are key optical elements for applications in communications, sensing, and lasers. Phase-shifted Bragg gratings are a special case where the simple periodic structure is altered to allow a narrow spectral passband within the optical bandgap. Here, we demonstrate phase-shifted silicon nitride gratings fabricated using 193 nm deep ultraviolet lithography (DUV) on the AIM Photonics 300 mm silicon photonics foundry line. We measure the grating properties and verify the results with a transfer-matrix method (TMM) model. The standard grating expressions for extracting the coupling coefficient κ and bandwidth do not apply and are updated to account for the phase shift. These results inform future designs for on-chip grating filters and distributed feedback (DFB) lasers.

Husko, Chad (ORCID:0000000271252518)↗