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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Theory and operation of the Gould 32/27 programs ABLE-2A and EBLE for the tropospheric air motion measurement system

Software development for the Trospheric Air Motion Measurement Systems (TAMMS) is documented. In July/August the TAMMS was flown on the NASA/Goddard Flight Center Electra aircraft for 19 mission for the ABLE-2A (Amazon Boundary Layer Experiment) in Brazil. In December 1985, several flights were performed to assess the contamination and boundary layer of the Electra. Position data, flow angles, pressure transducer measurements were recorded. The programs written for the ABLE-2A were modified due to timing considerations for this particular program. The 3-step programs written for EBLE (Electra Boundary Layer Experiment) are described. Power up and log-on procedures are discussed. A few editing techniques are described for modification of the programs.

Butler, C.↗
DOE OSTI2026

A New Measurement of the Extragalactic Background Light Using 15 yr of Fermi-large Area Telescope Data

The extragalactic background light (EBL) from ultraviolet to infrared comprises the emission from all stars, galaxies, and actively accreting black holes in the observable Universe. A precise measurement of the EBL is critically important to probe models of star formation and galaxy evolution. The EBL can be measured via the absorption imprint left on the spectra of γ-ray blazars. In this work, we rely on 15 yr of Fermi-LAT data and 1576 blazars to measure the EBL optical depth in the 0 < z < 4.3 range. We detect the EBL attenuation with ≅23σ significance and measure the optical depth in 19 redshift bins, extending the coverage and improving on our previous results. This allows us to reconstruct the evolution of the EBL and find general consistency with recent EBL models. These results represent the most precise determination of the EBL with GeV γ rays to date.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1983

The extragalactic background light at 4400 A

Space based photometric determinations of the extragalactic background light (EBL) are compared with galaxy count determinations of EBL brightness. The results of various EBL studies at blue and visual wavelengths are summarized, and an upper limit of 3.9 S-sub-10 (V)-sub-G2V at the 2 sigma level is placed on the brightness of the extragalactic background at 4400 A. EBL data in regions near the north and south galactic poles are also presented, the first such data obtained from heliocentric distances where the zodiacal light is negligible. Several paradigms consistent with the inferred EBL limits are mentioned, including less galactic evolution or masking of galactic evolution, galaxy formation at very high redshifts, and dusty primeval galaxies decreasing optical EBL and increasing infrared EBL. Models promulgating all primeval galaxies as high-luminosity objects undergoing bursts of star formation are incompatible with the EBL observations.

Toller, G. N.↗
NASA NTRS2012

The Extragalactic Background Light and the Gamma-ray Opacity of the Universe

The extragalactic background light (EBL) is one of the fundamental observational quantities in cosmology. All energy releases from resolved and unresolved extragalactic sources, and the light from any truly diffuse background, excluding the cosmic microwave background (CMB), contribute to its intensity and spectral energy distribution. It therefore plays a crucial role in cosmological tests for the formation and evolution of stellar objects and galaxies, and for setting limits on exotic energy releases in the universe. The EBL also plays an important role in the propagation of very high energy gamma-rays which are attenuated en route to Earth by pair producing gamma-gamma interactions with the EBL and CMB. The EBL affects the spectrum of the sources, predominantly blazars, in the approx 10 GeV to 10 TeV energy regime. Knowledge of the EBL intensity and spectrum will allow the determination of the intrinsic blazar spectrum in a crucial energy regime that can be used to test particle acceleration mechanisms and VHE gamma-ray production models. Conversely, knowledge of the intrinsic gamma-ray spectrum and the detection of blazars at increasingly higher redshifts will set strong limits on the EBL and its evolution. This paper reviews the latest developments in the determination of the EBL and its impact on the current understanding of the origin and production mechanisms of gamma-rays in blazars, and on energy releases in the universe. The review concludes with a summary and future directions in Cherenkov Telescope Array techniques and in infrared ground-based and space observatories that will greatly improve our knowledge of the EBL and the origin and production of very high energy gamma-rays.

Dwek, Eli↗
DOE OSTI2022

Probing the Extragalactic Mid-infrared Background with HAWC

The extragalactic background light (EBL) contains all the radiation emitted by nuclear and accretion processes in stars and compact objects since the epoch of recombination. Measuring the EBL density directly is challenging, especially in the near-to-far-infrared wave band, mainly due to the zodiacal light foreground. Instead, gamma-ray astronomy offers the possibility to indirectly set limits on the EBL by studying the effects of gamma-ray absorption in the very high energy (VHE: >100 GeV) spectra of distant blazars. The High Altitude Water Cherenkov Gamma Ray Observatory (HAWC) is one of the few instruments sensitive to gamma rays with energies above 10 TeV. This offers the opportunity to probe the EBL in the near/mid-IR region: λ = 1–100 μm. In this study, we fit physically motivated emission models to Fermi-LAT gigaelectronvolt data to extrapolate the intrinsic teraelectronvolt spectra of blazars. We then simulate a large number of absorbed spectra for different randomly generated EBL model shapes and calculate Bayesian credible bands in the EBL intensity space by comparing and testing the agreement between the absorbed spectra and HAWC extragalactic observations of two blazars. The resulting bands are in agreement with current EBL lower and upper limits, showing a downward trend toward higher wavelength values λ > 10 μm also observed in previous measurements.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

Energy balance in the DSSAT-CSM-CROPGRO model

One potential way to improve crop growth models is for the models to predict energy balance and evapotranspiration (ET) from first principles, thus serving as a check on “engineered” ET methodology. In this paper, we present new implementations and the results of an energy balance model (EBL) developed by Jagtap and Jones (1989) and then implemented in DSSAT’s CROPGRO (CG-EBL) model by Pickering et al. (1995) as a linked energy balance-photosynthesis model that has not been field-tested until now. The energy balance code computes evapotranspiration and other energy balance components, as well as a canopy air temperature, based on three sources (sunlit leaves, shaded leaves, soil surface). Model performance was evaluated with measured biomass and energy fluxes from two sites in Nebraska, namely, the US-Ne2 irrigated maize-soybean rotation field and the US-Ne3 rainfed maize-soybean rotation field, which are part of the Ameriflux eddy covariance network (htt ps://ameriflux.lbl.gov/sites). After implementing new aerodynamic resistances and the stomatal conductance model of the Ball–Berry–Leuning, crop growth, evapotranspiration and soil temperature were simulated well by the EBL model. The EBL improved ET predictions slightly over the often-used FAO56 method [Penman–Monteith (Allen et al., 1998)] for 4 of the 5 years evaluated for both irrigated and rainfed conditions. Further, a significant improvement was achieved using EBL for the simulation of soil temperature at the various depths compared to STEMP, the original subroutine in DSSAT for simulating soil temperature. Compared to the other available DSSAT methods, the EBL explicitly simulates the impacts of crop morphology, physiology and management on the crop’s environment and energy and mass exchange, which in turn directly affect the water use and irrigation requirements, phenology, photosynthesis, growth, sterility, and yield of the crop.

54 ENVIRONMENTAL SCIENCES↗
NASA NTRS2012

The Imprint of the Extragalactic Background Light in the Gamma-Ray Spectra of Blazars

The light emitted by stars and accreting compact objects through the history of the universe is encoded in the intensity of the extragalactic background light (EBL). Knowledge of the EBL isimportant to understand the nature of star formation and galaxy evolution, but direct measurements of the EBL are limited by galactic and other foreground emissions. Here, we report an absorption feature seen in the combined spectra of a sample of gamma-ray blazars out to a redshift of z approx. 1.6. This feature is caused by attenuation of gamma rays by the EBL at optical to ultraviolet frequencies and allowed us to measure the EBL flux density in this frequency band.

background↗
NASA NTRS2012

The Impact of Electromagnetic Cascades of Very-high Energy Gamma Rays on the Extragalactic Gamma-ray Background

As very high energy (VHE) photons propagate through the extragalactic background light (EBL), they interact with the soft photons of the EBL and initiate electromagnetic cascades of photons and electrons. The collective intensity of a cosmological population emitting at VHEs (such as blazars) will be attenuated at the highest energies through interactions with the EBL and enhanced at lower energies by the resulting cascade. As such, depending on the space density and spectra of the sources and the model of the EBL, cascade radiation can provide a significant contribution to the extragalactic gamma-ray background (EGB). Through deflections of the charged particles of the cascade, an intergalactic magnetic field (IGMF) may leave an imprint on the anisotropy properties of the EGB. The impact of a strong IGMF is to isotropize lower energy cascade photons, inducing a modulation in the anisotropy energy spectrum of the EGB. We discuss the implications of cascade radiation for the origins of the EGB and the nature of the IGMF, as well as insight that will be provided by data from the Fermi Large Area Telescope in the upcoming years.

Venters, Tonia↗
NASA NTRS1994

Constructing Simplified Plans via Truth Criteria Approximation

This paper has presented an approach to dealing with the complexity of explanation-based learning plans in complex domains. This approach uses a simplified algorithm to construct plans, and employs later refinements to repair bugs in constructed plans. This algorithm has the theoretical properties of completeness and convergence upon soundness. This incremental reasoning planning and learning algorithm has been implemented using a partial-order constraint posting planner and empirically compared to a conventional exhaustive reasoning partial-order constraint-posting planner and learning algorithm. This comparison showed that 1) incremental reasoning significantly reduced learning costs compared to exhaustive reasoning, 2) Explanation-based Learning (EBL) reduced failures from incremental reasoning, 3) EBL with incremental reasoning required less search to solve problems than EBL with exhaustive reasoning.

Explanation-based learning EBL incremental reasoni↗
DOE OSTI2026

Mechanism of Vapor-Phase Infiltration of Organometallic Hf in Poly(Methyl Methacrylate) for Hybrid Resist Applications

Inorganic–organic hybrid thin films synthesized by vapor-phase infiltration (VPI) of metal oxides into organic photoresists, such as poly(methyl methacrylate) (PMMA), have recently demonstrated their utility in extreme ultraviolet lithography, critical for angstrom-era semiconductor device miniaturization. Hafnium oxide infiltration has been reported recently for this purpose, but its detailed VPI mechanism has remained largely unexplored. In this study, we investigated the VPI characteristics and mechanisms of tetrakis(dimethylamido)hafnium (TDMAHf)─the hafnium precursor predominantly used for VPI in the field─into PMMA and examined its impact on electron-beam lithography (EBL) exposure behavior. VPI was performed at temperatures ranging from 85 to 150 °C, with chemical interactions characterized using infrared reflection-absorption spectroscopy, and resist patterning performance was evaluated through EBL dose-sensitivity assessments. The results indicate that TDMAHf forms a reversible adduct with PMMA at temperatures up to 120 °C, whereas at 150 °C, covalent bond formation occurs, most likely via dealkylation that leads to acetate formation. EBL studies reveal that resist sensitivity is influenced by both infiltration temperature and developer selection, with aqueous isopropyl alcohol development demonstrating enhanced sensitivity compared to organic solvent-based development. The optimized infiltration protocol at 120 °C ensures a uniform inorganic distribution without compromising resist dissolution. These findings not only help refine hybrid resist patterning performance but also offer insights potentially applicable to the VPI of other homoleptic metal-amide organometallic VPI precursors that include TDMA ligands.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Integrated Strategies for Overcoming Resolution Limits in Electron Beam Lithography of Chemically Amplified Resists

Electron beam lithography (EBL) of chemically amplified resists (CARs) faces fundamental challenges, including stochastic electron scattering and acid diffusion, that limit resolution and reproducibility. Using SU-8 as a model CAR, this study systematically investigated complementary strategies to address these challenges, combining multipass exposure, proximity effect correction (PEC) with midrange correction factors, base quencher incorporation, and post-exposure bake (PEB) suppression. Monte Carlo simulations and calibrated PEC modeling revealed that extending the point spread function to include a midrange scattering component significantly improved critical dimension (CD) control across varying pattern densities, correcting deviations that conventional two-term PEC failed to capture. Multipass exposure, particularly 4-pass writing with a 25% offset, redistributed the dose to average stochastic beam and scattering fluctuations, reducing line-width roughness by more than 50% and yielding more uniform nanoscale features. Photoacid confinement was investigated by adding urea as a base quencher, which successfully reduced acid diffusion but introduced substantial sensitivity penalties without improving ultimate resolution or Z-factor performance, underscoring the trade-offs of chemical versus physical confinement. Suppressing PEB most directly minimized acid diffusion, resulting in improved Z-factors and reproducible 30 nm half-pitch dense line/space patterns. Overall, these results demonstrated that PEC with midrange correction, multipass strategies, quencher additives, and PEB-free processing addresses different aspects of the EBL process window and that their integration provides a comprehensive framework for managing stochastic scattering, diffusion, and chemical amplification effects. This framework advances dense nanoscale patterning in CARs and establishes guiding principles for optimizing resist design and process strategies in high-resolution EBL and potentially other advanced lithographies, such as extreme ultraviolet (EUV) lithography.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Mitigating challenges in aberration-corrected electron-beam lithography on electron-opaque substrates

Aberration-corrected electron-beam lithography (AC-EBL) using ultra-thin electron transparent membranes has achieved single-digit nanometer resolution in two widely used electron-beam resists: poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane. On the other hand, AC-EBL implementation on thick, electron-opaque substrates is appealing for conventional top-down fabrication of quantum devices with nanometer-scale features. To investigate the performance of AC-EBL on thick substrates, we measured the lithographic point spread function of a 200 keV aberration-corrected scanning transmission electron microscope by defining both positive and negative patterns in PMMA thin films, spin-cast on thick SiO 2 /Si substrates. We present the problems encountered during pre-exposure beam focusing and discuss methods to overcome them. In addition, applying some of these methods using commercial 50 nm thick SiN X membranes with thick Si support frames, we printed arrays of holes in PMMA with pitches around 26 nm on SiN X /Si substrates with increasing Si thickness. Here, our results show that proximity effects from even 50 nm thick SiN X membranes limit hole arrays to 20 nm pitch; however, down to this limit, the effect of the substrate thickness on the pattern quality is minimal. These results highlight the need for novel resists less susceptible to proximity effects, or resists which can be used directly, after development, as the dielectric material in periodic gates in 2D quantum devices.

2D quantum devices↗
DOE OSTI2021

GAMA/DEVILS: constraining the cosmic star formation history from improved measurements of the 0.3–2.2 μm extragalactic background light

We present a revised measurement of the optical extragalactic background light (EBL), based on the contribution of resolved galaxies to the integrated galaxy light (IGL). The cosmic optical background radiation (COB), encodes the light generated by star formation, and provides a wealth of information about the cosmic star formation history (CSFH). We combine wide and deep galaxy number counts from the Galaxy And Mass Assembly survey (GAMA) and Deep Extragalactic VIsible Legacy Survey (DEVILS), along with the Hubble Space Telescope (HST) archive and other deep survey data sets, in nine multiwavelength filters to measure the COB in the range from 0.35 μm to 2.2 μm. We derive the luminosity density in each band independently and show good agreement with recent and complementary estimates of the optical-EBL from very high-energy (VHE) experiments. Our error analysis suggests that the IGL and γ-ray measurements are now fully consistent to within $\sim 10{{\ \rm per\ cent}}$, suggesting little need for any additional source of diffuse light beyond the known galaxy population. We use our revised IGL measurements to constrain the CSFH, and place amplitude constraints on a number of recent estimates. As a consistency check, we can now demonstrate convincingly, that the CSFH, stellar mass growth, and the optical-EBL provide a fully consistent picture of galaxy evolution. Here, we conclude that the peak of star formation rate lies in the range 0.066–0.076 M ⊙ yr -1 Mpc -3 at a lookback time of 9.1 to 10.9 Gyr.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1994

A combined electron beam/optical lithography process step for the fabrication of sub-half-micron-gate-length MMIC chips

Advanced radar and communication systems rely heavily on state-of-the-art microelectronics. Systems such as the phased-array radar require many transmit/receive (T/R) modules which are made up of many millimeter wave - microwave integrated circuits (MMIC's). The heart of a MMIC chip is the Gallium Arsenide (GaAs) field-effect transistor (FET). The transistor gate length is the critical feature that determines the operating frequency of the radar system. A smaller gate length will typically result in a higher frequency. In order to make a phased array radar system economically feasible, manufacturers must be capable of producing very large quantities of small-gate-length MMIC chips at a relatively low cost per chip. This requires the processing of a large number of wafers with a large number of chips per wafer, minimum processing time, and a very high chip yield. One of the bottlenecks in the fabrication of MIMIC chips is the transistor gate definition. The definition of sub-half-micron gates for GaAs-based field-effect transistors is generally performed by direct-write electron beam lithography (EBL). Because of the throughput limitations of EBL, the gate-layer fabrication is conventionally divided into two lithographic processes where EBL is used to generate the gate fingers and optical lithography is used to generate the large-area gate pads and interconnects. As a result, two complete sequences of resist application, exposure, development, metallization and lift-off are required for the entire gate structure. We have baselined a hybrid process, referred to as EBOL (electron beam/optical lithography), in which a single application of a multi-level resist is used for both exposures. The entire gate structure, (gate fingers, interconnects and pads), is then formed with a single metallization and lift-off process. The EBOL process thus retains the advantages of the high-resolution E-beam lithography and the high throughput of optical lithography while essentially eliminating an entire lithography/metallization/lift-off process sequence. This technique has been proven to be reliable for both trapezoidal and mushroom gates and has been successfully applied to metal-semiconductor and high-electron-mobility field-effect transistor (MESFET and HEMT) wafers containing devices with gate lengths down to 0.10 micron and 75 x 75 micron gate pads. The yields and throughput of these wafers have been very high with no loss in device performance. We will discuss the entire EBOL process technology including the multilayer resist structure, exposure conditions, process sensitivities, metal edge definition, device results, comparison to the standard gate-layer process, and its suitability for manufacturing.

Sewell, James S.↗
NASA NTRS1999

Detecting the Attenuation of Blazar Gamma-ray Emission by Extragalactic Background Light with GLAST

Gamma rays with energy above 10 GeV interact with optical-UV photons resulting in pair production. Therefore, a large sample of high redshift sources of these gamma rays can be used to probe the extragalactic background starlight (EBL) by examining the redshift dependence of the attenuation of the flux above 10 GeV. GLAST, the next generation high-energy gamma-ray telescope, will for the first time have the unique capability to detect thousands of gamma-ray blazars up to redshifts of at least z = 4, with enough angular resolution to allow identification of a large fraction of their optical counterparts. By combining recent determinations of the gamma-ray blazar luminosity function, recent calculations of the high energy gamma-ray opacity due to EBL absorption, and the expected GLAST instrument performance to produce simulated samples of blazars that GLAST would detect, including their redshifts and fluxes, we demonstrate that these blazars have the potential to be a highly effective probe of the EBL.

Chen, Andrew↗
DOE OSTI2026

Community-Controlled Transportation: The Western New York E-Bike Library Network: Preprint

Shared Mobility Inc. (SMI) has used their mission of community-controlled transportation to partner with community based organizations on the launch and operations of E-Bike Libraries (EBLs) in Western New York (WNY) and beyond since 2021. For almost four years, the WNY EBLs have provided e-bikes at no cost to underserved communities in Buffalo and Niagara Falls. Participants used the e-bikes for commuting, recreational rides, community bike rides, running errands, and accessing essential services. This program significantly increased e-bike accessibility, with 71% of participants being first-time riders and 78% identifying as Black/African American. Challenges such as bike maintenance, battery charging logistics, and the need for suitable storage were addressed through partnerships with community-based organizations and adjustments to program logistics. Those lessons have been applied to additional EBLs in Pacoima, California and Carlisle, Pennsylvania, which have also been launched by SMI with a continued emphasis on the importance of community based approaches to sustainable transportation. All of these programs demonstrate the potential of e-bikes to provide an affordable, efficient, and fun transportation option, particularly for underserved communities. By leveraging community partnerships and focusing on accessibility and inclusivity, E-Bike Libraries can significantly contribute to sustainable transportation solutions and promote broader participation in the transportation electrification revolution.

33 ADVANCED PROPULSION SYSTEMS↗