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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

A New Measurement of the Extragalactic Background Light Using 15 yr of Fermi-large Area Telescope Data

The extragalactic background light (EBL) from ultraviolet to infrared comprises the emission from all stars, galaxies, and actively accreting black holes in the observable Universe. A precise measurement of the EBL is critically important to probe models of star formation and galaxy evolution. The EBL can be measured via the absorption imprint left on the spectra of γ-ray blazars. In this work, we rely on 15 yr of Fermi-LAT data and 1576 blazars to measure the EBL optical depth in the 0 < z < 4.3 range. We detect the EBL attenuation with ≅23σ significance and measure the optical depth in 19 redshift bins, extending the coverage and improving on our previous results. This allows us to reconstruct the evolution of the EBL and find general consistency with recent EBL models. These results represent the most precise determination of the EBL with GeV γ rays to date.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

Probing the Extragalactic Mid-infrared Background with HAWC

The extragalactic background light (EBL) contains all the radiation emitted by nuclear and accretion processes in stars and compact objects since the epoch of recombination. Measuring the EBL density directly is challenging, especially in the near-to-far-infrared wave band, mainly due to the zodiacal light foreground. Instead, gamma-ray astronomy offers the possibility to indirectly set limits on the EBL by studying the effects of gamma-ray absorption in the very high energy (VHE: >100 GeV) spectra of distant blazars. The High Altitude Water Cherenkov Gamma Ray Observatory (HAWC) is one of the few instruments sensitive to gamma rays with energies above 10 TeV. This offers the opportunity to probe the EBL in the near/mid-IR region: λ = 1–100 μm. In this study, we fit physically motivated emission models to Fermi-LAT gigaelectronvolt data to extrapolate the intrinsic teraelectronvolt spectra of blazars. We then simulate a large number of absorbed spectra for different randomly generated EBL model shapes and calculate Bayesian credible bands in the EBL intensity space by comparing and testing the agreement between the absorbed spectra and HAWC extragalactic observations of two blazars. The resulting bands are in agreement with current EBL lower and upper limits, showing a downward trend toward higher wavelength values λ > 10 μm also observed in previous measurements.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

Energy balance in the DSSAT-CSM-CROPGRO model

One potential way to improve crop growth models is for the models to predict energy balance and evapotranspiration (ET) from first principles, thus serving as a check on “engineered” ET methodology. In this paper, we present new implementations and the results of an energy balance model (EBL) developed by Jagtap and Jones (1989) and then implemented in DSSAT’s CROPGRO (CG-EBL) model by Pickering et al. (1995) as a linked energy balance-photosynthesis model that has not been field-tested until now. The energy balance code computes evapotranspiration and other energy balance components, as well as a canopy air temperature, based on three sources (sunlit leaves, shaded leaves, soil surface). Model performance was evaluated with measured biomass and energy fluxes from two sites in Nebraska, namely, the US-Ne2 irrigated maize-soybean rotation field and the US-Ne3 rainfed maize-soybean rotation field, which are part of the Ameriflux eddy covariance network (htt ps://ameriflux.lbl.gov/sites). After implementing new aerodynamic resistances and the stomatal conductance model of the Ball–Berry–Leuning, crop growth, evapotranspiration and soil temperature were simulated well by the EBL model. The EBL improved ET predictions slightly over the often-used FAO56 method [Penman–Monteith (Allen et al., 1998)] for 4 of the 5 years evaluated for both irrigated and rainfed conditions. Further, a significant improvement was achieved using EBL for the simulation of soil temperature at the various depths compared to STEMP, the original subroutine in DSSAT for simulating soil temperature. Compared to the other available DSSAT methods, the EBL explicitly simulates the impacts of crop morphology, physiology and management on the crop’s environment and energy and mass exchange, which in turn directly affect the water use and irrigation requirements, phenology, photosynthesis, growth, sterility, and yield of the crop.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2026

Mechanism of Vapor-Phase Infiltration of Organometallic Hf in Poly(Methyl Methacrylate) for Hybrid Resist Applications

Inorganic–organic hybrid thin films synthesized by vapor-phase infiltration (VPI) of metal oxides into organic photoresists, such as poly(methyl methacrylate) (PMMA), have recently demonstrated their utility in extreme ultraviolet lithography, critical for angstrom-era semiconductor device miniaturization. Hafnium oxide infiltration has been reported recently for this purpose, but its detailed VPI mechanism has remained largely unexplored. In this study, we investigated the VPI characteristics and mechanisms of tetrakis(dimethylamido)hafnium (TDMAHf)─the hafnium precursor predominantly used for VPI in the field─into PMMA and examined its impact on electron-beam lithography (EBL) exposure behavior. VPI was performed at temperatures ranging from 85 to 150 °C, with chemical interactions characterized using infrared reflection-absorption spectroscopy, and resist patterning performance was evaluated through EBL dose-sensitivity assessments. The results indicate that TDMAHf forms a reversible adduct with PMMA at temperatures up to 120 °C, whereas at 150 °C, covalent bond formation occurs, most likely via dealkylation that leads to acetate formation. EBL studies reveal that resist sensitivity is influenced by both infiltration temperature and developer selection, with aqueous isopropyl alcohol development demonstrating enhanced sensitivity compared to organic solvent-based development. The optimized infiltration protocol at 120 °C ensures a uniform inorganic distribution without compromising resist dissolution. These findings not only help refine hybrid resist patterning performance but also offer insights potentially applicable to the VPI of other homoleptic metal-amide organometallic VPI precursors that include TDMA ligands.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Integrated Strategies for Overcoming Resolution Limits in Electron Beam Lithography of Chemically Amplified Resists

Electron beam lithography (EBL) of chemically amplified resists (CARs) faces fundamental challenges, including stochastic electron scattering and acid diffusion, that limit resolution and reproducibility. Using SU-8 as a model CAR, this study systematically investigated complementary strategies to address these challenges, combining multipass exposure, proximity effect correction (PEC) with midrange correction factors, base quencher incorporation, and post-exposure bake (PEB) suppression. Monte Carlo simulations and calibrated PEC modeling revealed that extending the point spread function to include a midrange scattering component significantly improved critical dimension (CD) control across varying pattern densities, correcting deviations that conventional two-term PEC failed to capture. Multipass exposure, particularly 4-pass writing with a 25% offset, redistributed the dose to average stochastic beam and scattering fluctuations, reducing line-width roughness by more than 50% and yielding more uniform nanoscale features. Photoacid confinement was investigated by adding urea as a base quencher, which successfully reduced acid diffusion but introduced substantial sensitivity penalties without improving ultimate resolution or Z-factor performance, underscoring the trade-offs of chemical versus physical confinement. Suppressing PEB most directly minimized acid diffusion, resulting in improved Z-factors and reproducible 30 nm half-pitch dense line/space patterns. Overall, these results demonstrated that PEC with midrange correction, multipass strategies, quencher additives, and PEB-free processing addresses different aspects of the EBL process window and that their integration provides a comprehensive framework for managing stochastic scattering, diffusion, and chemical amplification effects. This framework advances dense nanoscale patterning in CARs and establishes guiding principles for optimizing resist design and process strategies in high-resolution EBL and potentially other advanced lithographies, such as extreme ultraviolet (EUV) lithography.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Mitigating challenges in aberration-corrected electron-beam lithography on electron-opaque substrates

Aberration-corrected electron-beam lithography (AC-EBL) using ultra-thin electron transparent membranes has achieved single-digit nanometer resolution in two widely used electron-beam resists: poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane. On the other hand, AC-EBL implementation on thick, electron-opaque substrates is appealing for conventional top-down fabrication of quantum devices with nanometer-scale features. To investigate the performance of AC-EBL on thick substrates, we measured the lithographic point spread function of a 200 keV aberration-corrected scanning transmission electron microscope by defining both positive and negative patterns in PMMA thin films, spin-cast on thick SiO 2 /Si substrates. We present the problems encountered during pre-exposure beam focusing and discuss methods to overcome them. In addition, applying some of these methods using commercial 50 nm thick SiN X membranes with thick Si support frames, we printed arrays of holes in PMMA with pitches around 26 nm on SiN X /Si substrates with increasing Si thickness. Here, our results show that proximity effects from even 50 nm thick SiN X membranes limit hole arrays to 20 nm pitch; however, down to this limit, the effect of the substrate thickness on the pattern quality is minimal. These results highlight the need for novel resists less susceptible to proximity effects, or resists which can be used directly, after development, as the dielectric material in periodic gates in 2D quantum devices.

2D quantum devices↗
DOE OSTI2021

GAMA/DEVILS: constraining the cosmic star formation history from improved measurements of the 0.3–2.2 μm extragalactic background light

We present a revised measurement of the optical extragalactic background light (EBL), based on the contribution of resolved galaxies to the integrated galaxy light (IGL). The cosmic optical background radiation (COB), encodes the light generated by star formation, and provides a wealth of information about the cosmic star formation history (CSFH). We combine wide and deep galaxy number counts from the Galaxy And Mass Assembly survey (GAMA) and Deep Extragalactic VIsible Legacy Survey (DEVILS), along with the Hubble Space Telescope (HST) archive and other deep survey data sets, in nine multiwavelength filters to measure the COB in the range from 0.35 μm to 2.2 μm. We derive the luminosity density in each band independently and show good agreement with recent and complementary estimates of the optical-EBL from very high-energy (VHE) experiments. Our error analysis suggests that the IGL and γ-ray measurements are now fully consistent to within $\sim 10{{\ \rm per\ cent}}$, suggesting little need for any additional source of diffuse light beyond the known galaxy population. We use our revised IGL measurements to constrain the CSFH, and place amplitude constraints on a number of recent estimates. As a consistency check, we can now demonstrate convincingly, that the CSFH, stellar mass growth, and the optical-EBL provide a fully consistent picture of galaxy evolution. Here, we conclude that the peak of star formation rate lies in the range 0.066–0.076 M ⊙ yr -1 Mpc -3 at a lookback time of 9.1 to 10.9 Gyr.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices

The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Community-Controlled Transportation: The Western New York E-Bike Library Network: Preprint

Shared Mobility Inc. (SMI) has used their mission of community-controlled transportation to partner with community based organizations on the launch and operations of E-Bike Libraries (EBLs) in Western New York (WNY) and beyond since 2021. For almost four years, the WNY EBLs have provided e-bikes at no cost to underserved communities in Buffalo and Niagara Falls. Participants used the e-bikes for commuting, recreational rides, community bike rides, running errands, and accessing essential services. This program significantly increased e-bike accessibility, with 71% of participants being first-time riders and 78% identifying as Black/African American. Challenges such as bike maintenance, battery charging logistics, and the need for suitable storage were addressed through partnerships with community-based organizations and adjustments to program logistics. Those lessons have been applied to additional EBLs in Pacoima, California and Carlisle, Pennsylvania, which have also been launched by SMI with a continued emphasis on the importance of community based approaches to sustainable transportation. All of these programs demonstrate the potential of e-bikes to provide an affordable, efficient, and fun transportation option, particularly for underserved communities. By leveraging community partnerships and focusing on accessibility and inclusivity, E-Bike Libraries can significantly contribute to sustainable transportation solutions and promote broader participation in the transportation electrification revolution.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography

Abstract Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges. One of such challenges is a need for improved EUV photoresists featuring simultaneously high sensitivity, resolution, and etch selectivity. Here, a new, positive‐tone, organic–inorganic hybrid EUV photoresist is demonstrated that delivers a high‐resolution EUVL and electron‐beam lithography (EBL) patterning capability combined with high sensitivity and etch resistance. The new resist, poly(methyl methacrylate) infiltrated with indium oxide (PMMA‐InO x ), is synthesized via vapor‐phase infiltration (VPI), a material hybridization technique derived from atomic layer deposition. The weak binding of the gaseous indium precursor, trimethylindium, to the carbonyl group in PMMA allows the synthesis of hybrids with inorganic content distributed uniformly in the resist, enabling high EUVL and EBL sensitivities (18 mJ cm −2 and 300 µC cm −2 , respectively) and high‐resolution positive‐tone EUVL patterning (e.g., 40 nm half‐pitch line‐space and 50 nm diameter contact hole patterns) with high Si etch selectivity (>30–40). The low exposure doses required to pattern the PMMA‐InO x hybrid resist, high etch resistance, and processing strategies, which are developed, can pave the way for using infiltration‐synthesized hybrid thin films as reliable positive‐tone EUV photoresists for future semiconductor patterning.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Molecular Layer Deposited Aluminum‐Based Hybrid Resist for High‐Resolution Nanolithography and Direct Ultra‐High Aspect Ratio Pattern Transfer

Inorganic-containing hybrid photoresists are critical for next-generation extreme ultraviolet (EUV) lithography and angstrom-era semiconductor miniaturization. However, associated conventional solution processing struggles to achieve ultrathin, uniform films with high conformality and compositional control, limiting overall patterning performance. Here, this study reports the systematic lithographic patterning characterization of an Al-based hybrid resist synthesized via vapor-phase molecular layer deposition (MLD), using the trimethylaluminum (TMA) metal precursor and the hydroquinone (HQ) aromatic organic linker. The resist supports both sub-20 nm high-resolution nanolithography and virtually infinite silicon plasma etch selectivity. Lithographic performance studied using electron beam lithography (EBL) as a proxy for EUV shows that, under an optimized process adopting post-exposure bake, the resist achieves the best resolution of 15.4 nm linewidth under stringent 1:1 line-space high-density patterning—limited only by the minimum beam size of the EBL system. The resist also shows wide dose latitude and balanced performance in resolution, roughness, and sensitivity. The infinite silicon etch selectivity, stemming from spontaneous aluminum oxyfluoride passivation layer formation, enables fabrication of micrometer-tall, 40 nm-wide silicon nanofin structures using only a ≈30 nm-thick resist layer, without no hard mask. These results highlight the potential of MLD-based hybrid resists for developing next-generation resist materials for micro/nanoelectronics manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Reflection grating fabrication for the Rockets for Extended-source X-ray Spectroscopy

Abstract The Rockets for Extended-source X-ray Spectroscopy (tREXS) grating spectrograph uses modules of reflection gratings to collect spectroscopic data from extended astronomical sources of soft X-rays. Two blazed master gratings were produced on silicon substrates with electron-beam lithography (EBL) and complementary nanofabrication processes that include KOH etching. Substrate-conformal imprint lithography (SCIL) was then used to create 191 replicas of the two grating masters for use in the flight instrument. Diffraction efficiency was measured for several replica gratings, which achieve a peak of$$ \varvec{>} $$ > 70% absolute efficiency near 0.22 keV and an average of$$ \varvec{\approx } $$ ≈ 50% absolute efficiency across the measured band, from 0.18 – 0.8 keV. Here we detail the nanofabrication of the grating masters, including the EBL parameters and tREXS-specific fabrication considerations, and the SCIL replication process used to generate the final instrument gratings. A discussion of grating characterization and areas for future improvement is also presented.

Astronomy & Astrophysics↗
DOE OSTI2025

Effect of Networking Density on the Patterning Performance of Molecular Layer Deposited Alucone Electron Beam/EUV Resists

One of the main barriers to continued device scaling in the era of extreme ultraviolet (EUV) lithography is the need for improved photoresist chemistries to address challenges such as poor EUV sensitivity, inadequate etch resistance, and pattern collapse. Metal-organic photoresists are a promising class of materials that can address many of these challenges, and among them, resists deposited via hybrid molecular layer deposition (MLD) have attracted interest for their unique advantages in thickness control, chemical homogeneity, and compatibility with vacuum processing. However, despite many successful demonstrations of patterning, little is known about how the molecular design of hybrid MLD resists affects their lithographic performance. In this work, we study the effect of the network structure, a common feature among all hybrid MLD resists, via a series of aluminum alkoxide ("alucone") negative tone resists with varying networking density. Their patterning mechanism is investigated via electron beam lithography (EBL)─a common proxy for EUV─and compared to their EUV-induced reactions studied via flood exposure and in situ characterization. In conclusion, we show that the resist with the least networking density demonstrates the best sensitivity and resolution, with the ability to resolve dense line/space gratings as small as 14 nm half pitch via EBL.

electron beam lithography↗
DOE OSTI2024

Approaching Angstrom-Scale Resolution in Lithography Using Low-Molecular-Mass Resists (<500 Da)

Resists that enable high-throughput and high-resolution patterning are essential in driving the semiconductor technology forward. The ultimate patterning performance of a resist in lithography is limited because of the trade-off between resolution, line-width roughness, and sensitivity; improving one or two of these parameters typically leads to a loss in the third. As the patterned feature sizes approach angstrom scale, the trade-off between these three metrics becomes increasingly hard to resolve and calls for a fundamental rethinking of the resist chemistry. Low-molecular-mass monodispersed metal-containing resists of high atom economy can provide not only very high resolution but also very low line-width roughness without sacrificing sensitivity. Here we describe a modular metal-containing resist platform (molecular mass <500 Da) where a molecular resist consists of just two components: a metal and a radical initiator bonded to it. This simple system not only is amenable to high-resolution electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL) but also unites them mechanistically, giving a consolidated perspective of molecular and chemical processes happening during exposure. Irradiation of the resist leads to the production of secondary electrons that generate radicals in the initiator bonded to metal. This brings about an intramolecular rearrangement and causes solubility switch in the exposed resist. We demonstrate record 1.9–2.0 nm isolated patterns and 7 nm half-pitch dense line-space features over a large area using EBL. With EUVL, 12 nm half-pitch line-space features are shown at a dose of 68 mJ/cm 2 . In both of these patterning techniques, the line-width roughness was found to be ≤2 nm, a record low value for any resist platform, also leading to a low-performance trade-off metric, Z factor, of 0.6 × 10 –8 mJ·nm 3 . With the ultimate resolution limited by instrumental factors, potential patterning at the level of a unit cell can be envisaged, making low-molecular-mass resists best poised for angstrom-scale lithography.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Mapping the cosmic gamma-ray horizon: the 1CGH catalogue of Fermi -LAT detections above 10 GeV

ABSTRACT We present the First Cosmic Gamma-ray Horizon (1CGH) catalogue, featuring $\gamma$-ray detections above 10 GeV based on 16 yr of observations with the Fermi Large Area Telescope (Fermi-LAT) satellite. After carefully selecting a sample of blazars and blazar candidates from catalogues in the literature, we performed a binned likelihood analysis and identified 2791 $\gamma$-ray emitters above 10 GeV, at >3$\sigma$ level, including 62 that are new $\gamma$-ray detections. For each source, we estimated the mean energy of the highest energy bin and analysed them in the context of the cosmic gamma-ray horizon. By adopting a reference model for the extragalactic background light (EBL), we identified a subsample of 525 sources where moderate to severe $\gamma$-ray absorption could be detected across the redshift range of 0–3. This work provides the most up-to-date compilation of detections above 10 GeV, along with their redshift information. We condense extensive results from the literature, including reports on observational campaigns dedicated to blazars and $\gamma$-ray sources, thereby delivering an unprecedented review of the redshift information for sources detected above 10 GeV. Additionally, we highlight key 1CGH sources where redshift information remains incomplete, offering guidance for future optical observation campaigns. The 1CGH catalogue aims to track the most significant sources for studying the $\gamma$-ray transparency of the Universe. Furthermore, it provides a targeted subsample where the EBL optical depth, $\tau _{(E,z)}$, can be robustly measured using Fermi-LAT data.

Arsioli, Bruno (ORCID:0000000181666602)↗
DOE OSTI2024

Spectroscopic search for optical emission lines from dark matter decay

We search for narrow-line optical emission from dark matter decay by stacking dark-sky spectra from the Dark Energy Spectroscopic Instrument (DESI) at the redshift of nearby galaxies from DESI’s Bright Galaxy and Luminous Red Galaxy samples. Our search uses regions separated by 5 to 20 arcsec from the centers of the galaxies, corresponding to an impact parameter of approximately 50 kpc. No unidentified spectral line shows up in the search, and we place a line flux limit of 10 −19 ergs/s/cm 2 /arcsec 2 on emissions in the wavelength range of 2000–9000⁢ Å. This places the tightest constraints yet on the two-photon decay of dark matter in the mass range of 5 to 12 eV, with a particle lifetime exceeding 3 × 10 25 s. Furthermore, this detection limit also implies that the line surface brightness contributed from all dark matter along the line of sight is at least 2 orders of magnitude lower than the measured extragalactic background light (EBL), ruling out the possibility that narrow optical-line emission from dark matter decay is a major source of the EBL.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2021

Probing Intra-Halo Light with Galaxy Stacking in CIBER Images

We study the stellar halos of 0.2 ≲ $z$ ≲ 0.5 galaxies with stellar masses spanning $M$* ~ 10 10.5 to 10 12 $M$ ⊙ (approximately $L$* galaxies at this redshift) using imaging data from the Cosmic Infrared Background Experiment (CIBER). A previous CIBER fluctuation analysis suggested that intra-halo light (IHL) contributes a significant portion of the near-infrared extragalactic background light (EBL), the integrated emission from all sources throughout cosmic history. In this work, we carry out a stacking analysis with a sample of ~30,000 Sloan Digital Sky Survey (SDSS) photometric galaxies from CIBER images in two near-infrared bands (1.1 and 1.8 $μ$m) to directly probe the IHL associated with these galaxies. We stack galaxies in five sub-samples split by brightness and detect an extended galaxy profile beyond the instrument point-spread function (PSF) derived by stacking stars. We jointly fit a model for the inherent galaxy light profile plus large-scale one- and two-halo clustering to measure the extended galaxy IHL. We detect nonlinear one-halo clustering in the 1.8 $μ$m band at a level consistent with numerical simulations. Furthermore, by extrapolating the fraction of extended galaxy light, we measure to all galaxy mass scales, we find ~30%/15% of the total galaxy light budget from galaxies is at radius $r$ > 10/20 kpc, respectively. These results are new at near-infrared wavelengths at the $L$* mass scale and suggest that the IHL emission and one-halo clustering could have appreciable contributions to the amplitude of large-scale EBL background fluctuations.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2026

Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics

Freestanding complex oxide membranes enable the release and transfer of epitaxial films, offering new design freedoms for next‐generation electronics. While the LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure exhibits remarkable tunable conductivity at its interface, the active interface remains buried beneath the substrate, limiting access to this functionality. Here, we demonstrate how the LAO/STO heterostructure, in membrane form, can be flipped and precisely positioned on silicon and other platforms using polymer‐free micromanipulation. The transferred membranes preserve atomically smooth surfaces, high crystallinity, and key electronic properties. Through the 44‐nm insulating STO layer, ultra‐low‐voltage electron‐beam lithography (ULV‐EBL) writes conductive nanostructures at the now‐accessible STO/LAO interface, offering the potential to function as programmable local gates that modulate charge carriers in the underlying silicon. The platform establishes a general strategy for integrating complex oxide heterostructures with semiconductors, quantum materials, and flexible substrates, enabling new architectures for reprogrammable nanoelectronic devices.

36 MATERIALS SCIENCE↗