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At least 19 records

Electron-cyclotron-resonance (ECR) plasma thruster research

An experimental apparatus to scientifically investigate the process of Electron-Cyclotron-Resonance (ECR) plasma acceleration has been tested. The apparatus consists of a vacuum facility, a 20 kW microwave power supply, and an argon ECR plasma thruster. Present instrumentation allows measurement of microwave input power, reflected power, propellant flow rate, and static pressure in the vacuum tank. In initial tests, an argon ECR plasma has been initiated repeatably at power levels ranging from 0.3 to 7.0 kW. The ECR plasma appears to diverge and separate from the applied magnetic field as predicted by theory. These tests suggest that the ECR plasma acceleration concept can be studied scientifically in the new apparatus.

Sercel, Joel C.↗

Electron-cyclotron-resonance (ECR) plasma acceleration

A research effort directed at analytically and experimentally investigating electron-cyclotron-resonance (ECR) plasma acceleration is outlined. In addition, relevant past research is reviewed. Also, the prospects for application of ECR plasma acceleration to spacecraft propulsion are described. It is shown that previously unexplained losses in converting microwave power to directed kinetic power via ECR plasma acceleration can be understood in terms of diffusion of energized plasma to the physical walls of the accelerator. It is also argued that line radiation losses due to electron-ion and electron-atom inelastic collisions should be less than estimated in past research. Based on this new understanding, the expectation now exists that very efficient ECR plasma accelerators can be designed for application to high-specific-impulse spacecraft propulsion.

Sercel, Joel C.↗

Material properties and device evaluations of ECR-deposited a-Si:H and a-SiC:H films

Device-quality a-Si:H and a-SiC:H films have been deposited using electron cyclotron resonance (ECR) microwave plasmas of SiH4, CH4, and H2 mixtures. Typical material properties of ECR-deposited, photosensitive a-Si:H films are: (1) high photosensitivity up to 2 x 106 with a photoconductivity of 10 exp -5 to 10 exp -4/(Ohm-cm), (2) a Tauc gap of 1.75 to 1.85 eV, (3) an Urbach slope of 50-60 meV determined by the constant photocurrent method, and (4) an integrated defect density of 1-2 x 10 exp 16/cu cm determined by junction capacitance measurements. Highly conductive, p-type a-SiC:H films have been produced by ECR plasmas with a conductivity of 0.2/(Ohm-cm).

Shing, Y. H.↗

Flight Testing of the Forward Looking Infra-Red (FLIR) Sensor on the Electronic Combat and Reconnaissance (ECR) Tornado

This paper presents details of the flight testing of the Forward Looking Infra-Red (FLIR) sensor integrated into the German Electronic Combat And Reconnaissance (ECR) Tornado aircraft. A brief description of the ECR operational requirements and the key avionic equipment is given. The technical features of the FLIR system and its integration into the aircraft arc presented as are the flight test methods used in assessing its performance. Test facilities are addressed as arc test results. The FLIR system for the ECR Tornado was shown to provide a useful pilot and WSO sight/ navigation aid and to provide an assistance to reconnaissance tasks. The FLIR system has also been shown to meet its specified range-resolution requirements.

Flight Testing↗

High Power ECR Ion Thruster Discharge Characterization

Electron cyclotron resonance (ECR) based ion thrusters with carbon based ion optics can potentially satisfy lifetime requirements for long duration missions (approximately 10 years) because grid erosion and cathode insert depletion issues are virtually eliminated. Though the ECR plasma discharge has been found to typically operate at slightly higher discharge losses than conventional DC ion thrusters (for high total thruster power applications), the discharge power fraction is small (less than 1 percent at 25 kW). In this regard, the benefits of increased life, low discharge plasma potentials, and reduced complexity are welcome tradeoffs for the associated discharge efficiency decrease. Presented here are results from discharge characterization of a large area ECR plasma source for gridded ion thruster applications. These measurements included load matching efficacy, bulk plasma properties via Langmuir probe, and plasma uniformity as measured using current probes distributed at the exit plane. A high degree of plasma uniformity was observed (flatness greater than 0.9). Additionally, charge state composition was qualitatively evaluated using emission spectroscopy. Plasma induced emission was dominated by xenon ion lines. No doubly charged xenon ions were detected.

Foster, John E.↗

ECR plasma thruster research - Preliminary theory and experiments

A preliminary theory of the operation of the electron-cyclotron-resonance (ECR) plasma thruster is described along with an outline of recent experiments. This work is presented to communicate the status of an ongoing research effort directed at developing a unified theory to quantitatively describe the operation of the ECR plasma thruster. The theory is presented as a set of nonlinear ordinary differential equations and boundary conditions which describe the plasma density, velocity, and electron temperature. Diagnostic tools developed to measure plasma conditions in the existing research device are described.

Sercel, Joel C.↗

Experimental studies of an ECR plasma thruster

The Electron Cyclotron Resonance (ECR) thruster is a proposed electrodeless space electric propulsion device with interesting and little understood physics. A laboratory ECR thruster was run in a vacuum tank at pressures in the 10 exp -5 torr range using 2.12 GHz microwave beam and Ar gas propellant. Movable diagnostic probes (a Faraday cup and a gridded energy analyzer) measured plasma characteristics as propellant gas flow rate and input microwave power level were varied. Ion energy and flux data were used to calculate I(sp), propulsive efficiency, and thrust. The ion flux profiles show an unexpected depression on the thruster axis for low tank pressures that disappears as the tank pressure increases. Ion energies decrease as the flow rate and pressure increase, but the microwave power level affects the energy only negligibly. The calculated propulsion parameters demonstrate that the efficiency of the laboratory device is low, and that tank pressure greatly changes the performance.

Kaufman, D. A.↗

Very Large Area/Volume Microwave ECR Plasma and Ion Source

The present invention is an apparatus and method for producing very large area and large volume plasmas. The invention utilizes electron cyclotron resonances in conjunction with permanent magnets to produce dense, uniform plasmas for long life ion thruster applications or for plasma processing applications such as etching, deposition, ion milling and ion implantation. The large area source is at least five times larger than the 12-inch wafers being processed to date. Its rectangular shape makes it easier to accommodate to materials processing than sources that are circular in shape. The source itself represents the largest ECR ion source built to date. It is electrodeless and does not utilize electromagnets to generate the ECR magnetic circuit, nor does it make use of windows.

Foster, John E.↗

Large-Area Permanent-Magnet ECR Plasma Source

A 40-cm-diameter plasma device has been developed as a source of ions for material-processing and ion-thruster applications. Like the device described in the immediately preceding article, this device utilizes electron cyclotron resonance (ECR) excited by microwave power in a magnetic field to generate a plasma in an electrodeless (noncontact) manner and without need for an electrically insulating, microwave-transmissive window at the source. Hence, this device offers the same advantages of electrodeless, windowless design - low contamination and long operational life. The device generates a uniform, high-density plasma capable of sustaining uniform ion-current densities at its exit plane while operating at low pressure [<10(exp -4) torr (less than about 1.3 10(exp -2) Pa)] and input power <200 W at a frequency of 2.45 GHz. Though the prototype model operates at 2.45 GHz, operation at higher frequencies can be achieved by straightforward modification to the input microwave waveguide. Higher frequency operation may be desirable in those applications that require even higher background plasma densities. In the design of this ECR plasma source, there are no cumbersome, power-hungry electromagnets. The magnetic field in this device is generated by a permanent-magnet circuit that is optimized to generate resonance surfaces. The microwave power is injected on the centerline of the device. The resulting discharge plasma jumps into a "high mode" when the input power rises above 150 W. This mode is associated with elevated plasma density and high uniformity. The large area and uniformity of the plasma and the low operating pressure are well suited for such material-processing applications as etching and deposition on large silicon wafers. The high exit-plane ion-current density makes it possible to attain a high rate of etching or deposition. The plasma potential is <3 V low enough that there is little likelihood of sputtering, which, in plasma processing, is undesired because it is associated with erosion and contamination. The electron temperature is low and does not vary appreciably with power.

Foster, John E.↗

Deposition Of Diamondlike Films By ECR Microwave Plasma

Hard, amorphous hydrogenated carbon films of diamondlike quality deposited at room temperature on silicon, optical glass, and quartz through decomposition of CH4 in electron-cyclotron-resonance (ECR) microwave plasma of CH4 diluted with H2. Technique provides hard, abrasion-resistant coatings for lenses and other optical components. Films chemically inert and posses high electrical resistivity and breakdown fields, valuable properties in microelectronics applications.

Pool, Frederick S.↗

Discharge Characterization of 40 cm-Microwave ECR Ion Source and Neutralizer

Discharge characteristics of a 40 cm, 2.45 GHz Electron Cyclotron Resonance (ECR) ion thruster discharge chamber and neutralizer were acquired. Thruster bulk discharge plasma characteristics were assessed using a single Langmuir probe. Total extractable ion current was measured as a function of input microwave power and flow rate. Additionally, radial ion current density profiles at the thruster.s exit plane were characterized using five equally spaced Faraday probes. Distinct low and high density operating modes were observed as discharge input power was varied from 0 to 200 W. In the high mode, extractable ion currents as high as 0.82 A were measured. Neutralizer emission current was characterized as a function of flow rate and microwave power. Neutralizer extraction currents as high as 0.6 A were measured.

Foster, John E.↗

Deposition of diamond-like films by ECR microwave plasma

Hard amorphous hydrogenated carbon, diamond-like films are deposited using an electron cyclotron resonance microwave plasma with a separate radio frequency power bias applied to a substrate stage. The electron cyclotron resonance microwave plasma yields low deposition pressure and creates ion species otherwise unavailable. A magnetic mirror configuration extracts special ion species from a plasma chamber. Different levels of the radio frequency power bias accelerate the ion species of the ECR plasma impinging on a substrate to form different diamond-like films. During the deposition process, a sample stage is maintained at an ambient temperature of less than 100.degree. C. No external heating is applied to the sample stage. The deposition process enables diamond-like films to be deposited on heat-sensitive substrates.

Shing, Yuh-Han↗

Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

Sung, K. T.↗

Microwave ECR Ion Thruster Development Activities at NASA Glenn Research Center

Outer solar system missions will have propulsion system lifetime requirements well in excess of that which can be satisfied by ion thrusters utilizing conventional hollow cathode technology. To satisfy such mission requirements, other technologies must be investigated. One possible approach is to utilize electrodeless plasma production schemes. Such an approach has seen low power application less than 1 kW on earth-space spacecraft such as ARTEMIS which uses the rf thruster the RIT 10 and deep space missions such as MUSES-C which will use a microwave ion thruster. Microwave and rf thruster technologies are compared. A microwave-based ion thruster is investigated for potential high power ion thruster systems requiring very long lifetimes.

Foster, John E.↗

A Community for Polar Early Career Researchers Engaging With the Interagency Arctic Research Policy Committee

The Interagency Arctic Research Policy Committee (IARPC) is tasked with implementation of the Arctic Research Plan (ARP) by coordinating representatives from federal and state agencies, academic, industry, and Indigenous partners with interests in Arctic research. IARPC is organized into several collaboration teams and discipline-specific communities of practice that interface on the IARPC Collaborations website. The Early Career Community of Practice (ECCoP) is one such community that was established to promote the research of early career researchers (ECR) and increase ECR engagement with the ARP, program managers, collaboration teams, and communities of practice. The ECCoP has grown to develop regular newsletters promoting recent ECR research publications ad sharing training, job, funding, and collaboration opportunities relevant to community members at all life stages that self-identify as ECRs. Within IARPC, the ECCoP continues to promote ECR participation in monthly community of practice meetings and webinars and to report on ECR efforts that contribute to deliverables of the ARP Biennial Implementation Plan. Recent activity of the ECCoP includes developing an annual survey of the ECR cohort on IARPC to follow change in demographics over time and to identify community needs to improve diversity and inclusion in the polar research space and to address gaps in training needs for ECRs.

Katy Smith↗

Electron cyclotron resonance deposition of a-Si:H and a-C:H films

Amorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films have been deposited by electron cyclotron resonance (ECR) microwave plasma enhanced CVD. A high deposition rate of 25 A/sec and a light-to-dark conductivity ratio of 500,000 for a-Si:H films have been achieved by the ECR process using a pure silane plasma. ECR microwave plasmas have been analyzed by in situ optical emission spectroscopy (OES) and have shown a strong H-asterisk emission at 434 nm indicating higher chemical reactivity than RF plasmas. The linear correlation between the film deposition rate and the SiH-asterisk emission intensity of ECR silane plasma suggests that SiH-asterisk species are related to the neutral radicals which are responsible for the a-Si:H film deposition. Hard and soft a-C:H films have been deposited by ECR with and without RF bias power, respectively. The RF bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR deposited a-C:H films. Raman spectra of these films indicate that ECR deposition conditions can be optimized to produce diamond films.

Shing, Y. H.↗

Determination of Ground-Laboratory to In-Space Effective Atomic Oxygen Fluence for DC 93?500 Silicone

The objective of this research was to calibrate the ground-to-space effective atomic oxygen fluence for DC 93-500 silicone in a thermal energy electron cyclotron resonance (ECR) oxygen plasma facility. Silicones, commonly used spacecraft materials, do not chemically erode with atomic oxygen attack like other organic materials but form an oxidized hardened silicate surface layer. Therefore, the effective atomic oxygen fluence in a ground test facility should not be determined based on mass loss measurements, as they are with organic polymers. A technique has been developed at the Glenn Research Center to determine the equivalent amount of atomic oxygen exposure in an ECR ground test facility to produce the same degree of atomic oxygen damage as in space. The approach used was to compare changes in the surface hardness of ground test (ECR) exposed DC 93-500 silicone with DC 93-500 exposed to low Earth orbit (LEO) atomic oxygen as part of a shuttle flight experiment. The ground to in-space effective atomic oxygen fluence correlation was determined based on the fluence in the ECR source that produced the same hardness for the fluence in-space. Nanomechanical hardness versus contact depth measurements were obtained for five ECR exposed DC 93-500 samples (ECR exposed for 18 to 40 hrs, corresponding to Kapton effective fluences of 4.2 x 10(exp 20) to 9.4 x 10(exp 20) atoms/sq cm, respectively) and for space exposed DC 93-500 from the Evaluation of Oxygen Interactions with Materials III (EOIM III) shuttle flight experiment, exposed to LEO atomic oxygen for 2.3 x 10(exp 20) atoms/sq cm. Pristine controls were also evaluated. A ground-to-space correlation value was determined based on correlation values for four contact depths (150, 200, 250, and 300 nm), which represent the near surface depth data. The results indicate that the Kapton effective atomic oxygen fluence in the ECR facility needs to be 2.64 times higher than in LEO to replicate equivalent exposure damage in the ground test silicone as occurred in the space exposed silicone.

deGroh, Kim K.↗

Silicon carbon alloy thin film depositions using electron cyclotron resonance microwave plasmas

Amorphous and microcrystalline silicon carbon films (a-SiC:H, micro-c-SiC:H) have been deposited using SiH4, CH4 and H2 mixed gas ECR (electron cyclotron resonance) plasmas. The optical bandgap of a-SiC:H films is not dependent on the hydrogen dilution in the ECR plasma. The deposition rate of a-SiC:H films is found to be strongly dependent on the ECR magnetic field and the hydrogen dilution. The hydrogen dilution effect on the deposition rate indicates that the etching in ECR hydrogen plasmas plays an important role in the deposition of a-SiC:H films. The optical constants n and k of ECR-deposited a-SiC:H films in the wavelength region of 0.4 to 1.0 micron are determined to be 2.03-1.90 and 0.04-0.00, respectively. The microstructures of ECR-deposited micro-c-SiC:H films are shown by X-ray diffraction and SEM (scanning electron microscopy) to be composed of 1000-A alpha-SiC microcrystallites and amorphous network structures.

Shing, Y. H.↗