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Edge dislocations in elastic isotropic half space, calculating their displacement functions and considering their electron diffraction contrast
An investigation was undertaken to determine if the size and modulus interaction of a solute atom with a screw dislocation and the modulus interaction with an edge dislocation contributed to strengthening, in addition to the size interaction with an edge dislocation. The results indicate that the size interaction between solute atom and an edge dislocation accounts for most of the solid solution strengthening in f.c.c. alloys. The contribution to the yield stress from the modulus interaction with an edge dislocation is less than 15%. The interaction between a solute atom and a screw dislocation is much less than that between a solute atom and an edge dislocation.
While micro-twinning is the dominant creep deformation mechanism in Ni-based superalloys at temperatures above 700 C, many aspects of twin nucleation and growth remain unexplored. Kolbe mechanism for micro-twinning, based on thermally activated reordering, is probably the only concept currently widely accepted by the scientific community. We propose a qualitatively different mechanism for nucleation and growth of twins. The mechanism can be briefly described as follows. Penetration of a gamma prime precipitate by two 1/2(110) edge dislocations travelling on adjacent {111} glide planes triggers nucleation (at the interface of the precipitate and the matrix) and emission of Shockley partial of screw character on the glide plane of the edge dislocation, which entered the precipitate first (generating trailing high-energy anti-phase boundary (APB)). Propagation of this Shockley partial into the precipitate converts the APB into super intrinsic stacking fault (SISF). The recurring arrival of additional edge dislocations on the glide planes adjacent to the configuration described above leads to formation of super extrinsic stacking fault SESF, subsequent micro-twin formation, and growth of the twinned region. We demonstrate the proposed mechanism via molecular dynamics simulations.
While micro-twinning is the dominant creep deformation mechanism in Ni-based superalloys at temperatures above 700 C, many aspects of twin nucleation and growth remain unexplored. Kolbe mechanism for micro-twinning, based on thermally activated reordering, is probably the only concept currently widely accepted by the scientific community. We propose a qualitatively different mechanism for nucleation and growth of twins. The mechanism can be briefly described as follows. Penetration of a precipitate by two 1/2(110) edge dislocations travelling on adjacent {111} glide planes triggers nucleation (at the interface of the precipitate and the matrix) and emission of Shockley partial of screw character on the glide plane of the edge dislocation, which entered the precipitate first (generating trailing high-energy anti-phase boundary (APB)). Propagation of this Shockley partial into the precipitate converts the APB into super intrinsic stacking fault (SISF). The recurring arrival of additional edge dislocations on the glide planes adjacent to the configuration described above leads to formation of super extrinsic stacking fault SESF, subsequent micro-twin formation, and growth of the twinned region. We demonstrate the proposed mechanism via molecular dynamics simulations.
The interaction forces between a straight edge dislocation moving through a three-dimensional block containing a random array of solute atoms were determined. The yield stress at 0 K was obtained by determining the average maximum solute-dislocation interaction force that is encountered by edge dislocation, and an expression relating the yield stress to the length of the dislocation and the solute concentration is provided. The magnitude of the solid solution strengthening due to solute atoms can be determined directly from the numerical results, provided the dislocation line length that moves as a unit is specified.
Correlations between critical current density (j(sub c)) critical temperature (T(sub c)) and the density of edge dislocations and nonuniform strain have been observed in YBCO thin films deposited by pulsed laser ablation on (001) LaAlO3 single crystals. Distinct maxima in j(sub c) as a function of the linewidths of the (00 l) Bragg reflections and as a function of the mosaic spread have been found in the epitaxial films. These maxima in j(sub c) indicate that the magnetic flux lines, in films of structural quality approachingthat of single crystals, are insufficiently pinned which results in a decreased critical current density. T(sub c) increased monotonically with improving crystalline quality and approached a value characteristic of a pure single crystal. A strong correlation between j(sub c) and the density of edge dislocations ND was found. At the maximum of the critical current density the density of edge dislocations was estimated to be N(sub D) approximately 1-2 x 10(exp 9)/sq cm.
Effects of second phase size and rigidity on stresses associated with blocked screw and edge dislocation arrays
An investigation was conducted to examine plastic deformation of a cleaved single-crystal magnesium oxide 001-plane surface exposed to cavitation. Cavitation damage experiments were carried out in distilled water at 25 C by using a magnetostrictive oscillator in close proximity (2 mm) to the surface of the cleaved specimen. The dislocation-etch-pit patterns induced by cavitation were examined and compared with that of microhardness indentations. The results revealed that dislocation-etch-pit patterns around hardness indentations contain both screw and edge dislocations, while the etch-pit patterns on the surface exposed to cavitation contain only screw dislocations. During cavitation, deformation occurred in a thin surface layer, accompanied by work-hardening of the ceramic. The row of screw dislocations underwent a stable growth, which was analyzed crystallographically.
Silicon-carbide- (SiC-) based power devices could enable substantial aerospace electronics benefits over today's silicon-based electronics. However, present-day SiC wafers contain electrically harmful dislocations (including micropipes) that are unpredictably distributed in high densities across all commercial 4H- and 6H-SiC wafers. The NASA Glenn Research Center recently demonstrated a crystal growth process that moves SiC wafer dislocations to predetermined lateral positions in epitaxial layers so that they can be reproducibly avoided during subsequent SiC electronic device fabrication. The process starts by reactive ion etching mesa patterns with enclosed trench regions into commercial on-axis (0001) 4H- or 6H-SiC substrates. An example of a pregrowth mesa geometry with six enclosed triangular-shaped trench regions is shown. After the etch mask is stripped, homoepitaxial growth is carried out in pure stepflow conditions that enable thin cantilevers to grow laterally from the tops of mesas whose pregrowth top surfaces are not threaded by substrate screw dislocations. The image in the bottom figure shows the postgrowth structure that forms after the lateral cantilevers expand to coalesce and completely roof over each of the six triangular trench regions. Atomic force microscope (AFM) measurements of the roof revealed that three elementary screw dislocation growth spirals, each shown in the AFM insets of the bottom image on the previous page, formed in the film roof at three respective points of cantilever film coalescence. The image above shows the structure following an etch in molten potassium hydroxide (KOH) that produced surface etch pits at the dislocation defects. The larger KOH etch pits--S1, S2, and S3--shown in this image correspond to screw dislocations relocated to the final points of cantilever coalescence. The smaller KOH etch pits are consistent with epilayer threading edge dislocations from the pregrowth substrate mesa (P1, P3, and P4) and a final cantilever coalescence point (P2). No defects (i.e., no etch pits) are observed in other cantilevered portions of the film surface. On the basis of the principle of dislocation Burgers vector conservation, we hypothesize that all vertically propagating substrate dislocations in an enclosed trench region become combined into a single dislocation in the webbed film roof at the point of final roof coalescence. The point of final roof coalescence, and therefore the lateral location of a webbed roof dislocation, can be designed into the pregrowth mesa pattern. Screw dislocations with predetermined lateral positions can then be used to provide the new growth steps necessary for growing a 4H/6H-SiC epilayer with a lower dislocation density than the substrate. Devices fabricated on top of such films can be positioned to avoid the preplaced dislocations.
Long term tensile creep studies were conducted on binary NiAl in the temperature range 700-1200 K with the objectives of characterizing and understanding the creep mechanisms. Inverse and normal primary creep curves were observed depending on stress and temperature. It was concluded that the creep of NiAl is limited by dislocation mobility. The stress exponent for creep, n, increased from 5.5 at 1200 K to 13.9 at 700 K. The true activation energy for creep, Qc, was constant and equal to about 400 kJ per mole between 20 and 50 MPa but decreased to a constant value of 250 kJ per mole between 50 and 110 MPa. The activation energy was observed to be stress dependent above 110 MPa. The tensile creep results reported in this investigation were compared with compression creep data reported in the literature. A detailed discussion of the probable dislocation creep mechanisms governing compressive and tensile creep of NiAl is presented. It is concluded that the non-conservative motion of jogs on screw dislocations influenced the nature of the primary creep curves, where the climb of these jogs involves either the next nearest neighbor or the six-jump cycle vacancy diffusion mechanism. The probable nature of the atom vacancy exchange that occur within the core of an edge dislocation undergoing climb in NiAl are schematically examined.
Compression creep and long term tensile creep studies were conducted on cast and extruded binary NiAl in the temperature range 700-1200 K with the objectives of characterizing and understanding the creep mechanisms. Inverse and normal primary creep curves were observed in both compression and tension creep depending on stress and temperature although an asymmetrical response was observed under these two stress states. It was concluded that the primary creep of NiAl is limited by dislocation mobility. The stress exponents, n, for compression and tensile creep were similar varying between about 5 and 14. However, there were significant differences in the stress dependence of the activation energies for compression and tensile creep. The true activation energy for tensile creep, Q(sub c), was constant and equal to about 400 kJ/mol between 20 and 50 MPa but decreased to a constant value of 250 kJ/mol between 50 and 110 MPa. The activation energy was observed to be inversely stress dependent above 110 MPa. In contrast, Q(sub c) = 300 kJ/mol for compression creep was constant between 25 and 70 MPa and inversely dependent on the true stress above 70 MPa. A detailed discussion of the probable dislocation creep mechanisms governing compressive and tensile creep of NiAl is presented. It is concluded that the non-conservative motion of jogs on screw dislocations influenced the nature of the primary creep curves, where the climb of these jogs involves either the next nearest neighbor or the six-jump cycle vacancy diffusion mechanism. The probable natures of the atom-vacancy exchange that occur within the core of an edge dislocation undergoing climb in NiAl are schematically examined.
The plane interaction problem for a circular elastic inclusion imbedded into an elastic matrix which contains an arbitrarily oriented crack is considered. Using the existing solutions for the edge dislocations as Green's functions, first the general problem of a through crack in the form of an arbitrary smooth arc located in the matrix in the vicinity of the inclusion is formulated. The integral equations for the line crack are then obtained as a system of singular integral equation with simple Cauchy kernels. The singular behavior of the stresses around the crack tips is examined and the expressions for the stress intensity factors representing the strength of the stress singularities are obtained in terms of the asymptotic values of the density functions of the integral equations. The problem is solved for various typical crack orientations and the corresponding stress intensity factors are given.
Internal friction peaks observed after small deformation in high purity tungsten single crystals between liquid helium temperature and 800 K in the frequency range 30-50 KHz, are studied as a function of orientation. An orientation effect is observed in the internal friction spectra due to the creation of internal stresses. The elementary processes related to these peaks are discussed in terms of kink generation and geometric kink motion on screw and edge dislocations in an internal stress field.
Explosive deformation (50 kbar range) induced, in Cu, Mo and Nb, internal friction peaks identical to those observed after large normal deformation. The variation of the peaks with pressure for Mo and Nb lead to an explanation of these processes in terms of double kink generation in screw and edge dislocations.
The plane interaction problem for a circular elastic inclusion embedded in an elastic matrix which contains an arbitrarily oriented crack is considered. Using the existing solutions for the edge dislocations as Green's functions, first the general problem of a through crack in the form of an arbitrary smooth arc located in the matrix in the vicinity of the inclusion is formulated. The integral equations for the line crack are then obtained as a system of singular integral equations with simple Cauchy kernels. The singular behavior of the stresses around the crack tips is examined and the expressions for the stress-intensity factors representing the strength of the stress singularities are obtained in terms of the asymptotic values of the density functions of the integral equations. The problem is solved for various typical crack orientations and the corresponding stress-intensity factors are given.
Analyses of oxide dispersion strengthened (ODS) alloys shows that their characteristics are mainly due to the creep behavior of the matrix material. Diffusion-controlled slip creep is established as the rate-controlling process in the alloys investigated, with the glide and climb of edge dislocations associated with the subgrain structure as barriers being the specific rate-controlling step. It is found that the stable subgrain size in ODS alloys is usually associated with the spacing between particles 500-1000 A in size, and that their creep behavior is distinguished from that of the matrix material by the existence of a threshold stress that is not well defined microscopically but appears to be related to particles of less than 500 A size.
Surface films deposited on body-centered cubic metals can greatly reduce the yield and flow stresses and increase the ductility at low homologous temperatures. This softening process is associated with the ability of the film-substrate interface to generate large populations of mobile edge dislocations. This phenomenon is extended to B2 ordered intermetallic alloys, which display many deformation characteristics of bcc metals. Single crystal NiAl coated with thermally formed oxide films and polycrystalline FeAl with electrochemically formed Fe-Al-O films display film softening at and below room temperature. The extent of film softening is shown to depend on many factors, including crystal orientation, deformation temperature, operative slip systems, film thickness, film adherence, and film and substrate properties.
The research objectives are to develop accurate, efficient numerical tool for fracture mechanics analysis with the capabilities of the method including the modeling of multiple site damage and the simulation of crack propagation. The fracture is modeled using a distribution of edge dislocations. Fundamental solutions for dislocations in an infinite medium, in the neighborhood of a circular inhomogeneity, and near a bi-material interface are incorporated into the procedure to allow exceptionally accurate modeling of fracture geometries involving these types of inhomogeneities. To model arbitrary (finite) domains under general boundary conditions, a combination of the dislocation methodology and boundary element techniques is used. The dislocation scheme is a natural means to model the crack(s), and the boundary element method is an effective way to model the region in which the crack is embedded. The hybrid scheme is relatively easy to use and is very accurate. The research accomplishments are presented.