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Results for “EDGE DISLOCATIONS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Edge Dislocations Induce Improved Photocatalytic Efficiency of Colored TiO2

Titanium oxide is the most widely used material for photocatalytic applications due to its low cost and environmental friendliness. One of the grand challenges to improve its energy conversion efficiency is to utilize more visible light while inhibiting the recombination of photo-generated electrons and holes. We use a one-step hydro-solvothermal method to obtain colored ultra-fine nanowires of rutile and nanoparticles of anatase with edge dislocations, which induced broadened visible solar absorption (400-900 nm) and improved photocatalytic efficiency up to 1.8 times that of rutile or anatase without defects. Enhanced photocatalytic activity of these structures is demonstrated by photodegrading methylene blue measurements under simulated solar light irradiation. Results show the existence of Ti3+, induced by edge dislocations, and subsequent electronic band structure-property relationships. This work highlights a strategy for generating sufficient desired defects in TiO2 nanostructures, leading to broadened visible solar absorption and improved photocatalytic efficiency under visible light irradiation.

Ren, Peng↗
DOE OSTI2022

Coupled effect of Cr and Al on interactions between a prismatic interstitial dislocation loop and an edge dislocation line in Fe-Cr-Al alloy

Segregation of alloying elements to a prismatic dislocation loop under irradiation is an important phenomenon in understanding the role of loops in radiation effects in alloys. In this work, various segregation sequences of Cr and Al atoms to a $\langle$100$\rangle$ and a 1/2 $\langle$111$\rangle$ prismatic dislocation loop in a Fe-Cr-Al alloy are explored using molecular dynamics method and ab initio energy calculation. Here, the results reveal that Cr can readily segregate to the loops while Al atoms cannot by themselves, but the segregated Cr atoms are able to promote Al segregation at the loops, defined as a coupled segregation of Cr and Al. After interacting with Cr and Al, a previously mobile 1/2 $\langle$111$\rangle$ loop becomes sessile. Al segregation through the coupled segregation process can further affect the pinning behavior of a dislocation loop to an edge dislocation motion. By varying the Al fraction in the segregated solutes, a nonlinear dependence of the pinning effect on dislocation motion is determined. At lower fractions, the pinning strength increases with the increasing Al fraction until Al fraction reaches a critical value of about 19%, above which the pinning strength decreases with further increase of Al fraction. All these results suggest that, in addition to the effect of Al on the surface resistance to oxidation, Al effect on the dislocation loop behavior is important to optimize the composition of Fe-Cr-Al alloys for their applications in accident tolerant fuel concepts.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Structure and properties of edge dislocations in BiFe O 3

Edge dislocations are frequently found in epitaxial BiFeO 3 multiferroic thin films and are expected to exhibit distinctive and localized magnetoelectric properties. However, an exhaustive characterization of these dislocations at the atomic level has to date been largely overlooked. Here, we use a combination of scanning transmission electron microscopy techniques, atomistic simulations obtained from classical molecular dynamics calculations, and real-space multiple-scattering theory to explore the chemical properties and the bonding characteristics of the atoms located at and near the dislocation cores. We find that in addition to Bi, small amounts of Fe atoms are present in the BiFeO 3 dislocation cores which result in uncompensated Fe spins along the dislocations and give rise to a magnetic signal. Furthermore, our results suggest that edge dislocations in BiFeO 3 films could be efficiently used for realizing BiFeO 3 -based magnetic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Stabilizing single atoms and a lower oxidation state of Cu by a ½[110]{100} edge dislocation in Cu-CeO 2

Stabilizing atomically dispersed catalytic metal species at surfaces is a significant challenge for obtaining high-performance single atom catalysts. This is because of the strong tendency for the dispersed metal atoms to agglomerate. We propose that dislocations can provide a strong anchor for stabilizing single atoms. A ½[110]{100} edge dislocation in Cu doped ceria, Cu-CeO 2 , is investigated as a model system with density functional theory. The defect formation energies are found to be lower at the dislocation core, with a large segregation energy ranging within 0.8–2.5 eV depending on the site and species at the dislocation core. The high segregation energy indicates that the edge dislocations can enrich Cu defects in an atomically sized area and, thus, have a potential to strongly anchor single atom species at surfaces. Moreover, the edge dislocation also stabilizes reduced cation species, Cu (1+) and Ce (3+). The more reduced dislocation core can offer high concentration of oxygen vacancy as well as in-gap electronic states which provide more reactivity for surface reactions.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Dynamics and Removal Pathway of Edge Dislocations in Imperfectly Attached PbTe Nanocrystal Pairs: Toward Design Rules for Oriented Attachment

Using in situ high-resolution TEM, we study the structure and dynamics of well-defined edge dislocations in imperfectly attached PbTe nanocrystals. In this work, we identify that attachment of PbTe nanocrystals on both {100} and {110} facets gives rise to b = a/2⟨110⟩ edge dislocations. Based on the Burgers vector of individual dislocations, we can identify the glide plane of the dislocations. We observe that defects in particles attached on {100} facets have glide planes that quickly intersect the surface, and HRTEM movies show that the defects follow the glide plane to the surface. For {110} attached particles, the glide plane is collinear with the attachment direction, which does not provide an easy path for the dislocation to reach the surface. Indeed, HRTEM movies of dislocations for {110} attached particles show that defect removal is much slower. Further, we observe conversion from pure edge dislocations in imperfectly attached particles to dislocations with mixed edge and screw character, which has important implications for crystal growth. Lastly, we observe that dislocations initially closer to the surface have a higher speed of removal, consistent with the strong dislocation free surface attractive force. Our results provide important design rules for defect-free attachment of preformed nanocrystals into epitaxial assemblies.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Edge dislocations in dicalcium silicates: Experimental observations and atomistic analysis

Understanding defects and influence of dislocations on dicalcium silicates (Ca{sub 2}SiO{sub 4}) is a challenge in cement science. We report a high-resolution transmission electron microscopy image of edge dislocations in Ca{sub 2}SiO{sub 4}, followed by developing a deep atomic understanding of the edge dislocation-mediated properties of five Ca{sub 2}SiO{sub 4} polymorphs. By decoding the interplay between core dislocation energies, core structures, and nucleation rate of reactivity, we find that γ-C2S and α-C2S polymorphs are the most favorable polymorphs for dislocations in Ca{sub 2}SiO{sub 4}, mainly due to their large pore channels which take away majority of the distortions imposed by edge dislocations. Furthermore, in the context of edge dislocation, while α-C2S represents the most active polymorph for reactivity and crystal growth, β-C2S represents the most brittle polymorph suitable for grinding. This work is the first report on the atomistic-scale analysis of edge dislocation-mediated properties of Ca{sub 2}SiO{sub 4} and may open up new opportunities for tuning fracture and reactivity processes of Ca{sub 2}SiO{sub 4} and other cement components.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Superconductivity Localized at an Edge Dislocation

A spatially inhomogeneous superconductor is considered in the Ginzburg—Landau approximation. A spatial inhomogeneity (edge dislocation) is described in terms of the local shift of the superconducting transition temperature in its neighborhood. It is assumed that shift δT{sub c}(R) is proportional to the elastic stress produced by the dislocation. It is shown that in this case, localized superconducting states exist at temperatures exceeding T{sub c} of a homogeneous superconductor. The main characteristics of such states are obtained. The same approach is used for describing pinning of Abrikosov vortices at an edge dislocation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Experimental observation of motion of edge dislocations in Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures

The Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures grown by the molecular epitaxy method are analyzed using high-resolution electron microscopy with atomic resolution. The thickness of the Ge{sub x}Si{sub 1–x} buffer layer is 7–35 nm. It is shown that such heterostructures relax in two stages: an ordered network of edge dislocations is formed during their growth (500°C) at the Ge/GeSi interface and then, contrary to the generally accepted opinion concerning their immobility, some of the edge dislocations move through the buffer GeSi layer to the GeSi/Si(001) interface during annealing at higher temperatures and x > 0.3. It is found that plastic relaxation of the GeSi buffer layer occurs due to motion of dislocation complexes of the edge type, consisting of a pair of complementary 60° dislocations with the ends of (111) extra planes located approximately at a distance from 2 to 12 interplanar spacings. It is shown that the penetration of dislocation complexes into the GeSi buffer layer and further to the GeSi/Si interface is intensified with increasing annealing temperature (600–800°C) and the fraction of Ge in the buffer layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Simulation of the interaction between an edge dislocation and $\langle$111$\rangle$ interstitial dislocation loops in α-iron

The dependence of the interactions of intermediate-size ½<111> self-interstitial atom (SIA) loops with an edge dislocation on strain rate and temperature was discovered by molecular dynamics (MD) simulations for the interatomic potential derived by Ackland et al. (A97). For low temperatures ($T$ =1 K), the mechanisms of the interactions were in agreement with recent literature. It was demonstrated that a second passing of the dislocation through the loop led to a different mechanism than the one that occurred upon first passing. Since these mechanisms are associated with different SIA loop sizes, and since the loop lost a number of SIAs upon first interaction, it was deduced that the dividing threshold between large and small loops (rendering them strong or weak obstacles, respectively) is at the vicinity of the loop size studied (169 SIAs). For higher temperatures ($T$ = 300 K), the strain rate dependence proved strong: for low strain rates, the dislocation absorbed the loop as a double super-jog almost immediately and continued its glide unimpeded. For a high strain rate, the dislocation was initially pinned due to the formation of an almost sessile segment leading to high critical stress.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Molecular Statics Analyses of Thermodynamics and Kinetics of Hydrogen Cottrell Atmosphere Formation Around Edge Dislocations in Aluminum

Aluminum alloys are being explored as lightweight structural materials for use in hydrogen-containing environments. In this paper, to understand hydrogen effects on deformation, we perform molecular statics studies of the hydrogen Cottrell atmosphere around edge dislocations in aluminum. First, we calculate the hydrogen binding energies at all interstitial sites in a periodic aluminum crystal containing an edge dislocation dipole. This allows us to use the Boltzmann equation to quantify the hydrogen Cottrell atmosphere. Based on these binding energies, we then construct a continuum model to study the kinetics of the hydrogen Cottrell atmosphere formation. Finally, we compare our results with existing theories and discuss the effects of hydrogen on deformation of aluminum-based alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Computationally efficient method for determining limiting velocities of edge dislocations in anisotropic crystals

The continuum-limit theory of dislocations in crystals predicts divergences in the elastic energy at crystal-geometry dependent limiting velocities vL, which separate subsonic, transsonic, and supersonic dislocation glide regimes and are therefore import for material strength models at high strain rates. Although it is known how to calculate those limiting velocities, there is one special case - edge dislocations with reflection symmetry, but non-vanishing elastic constants c16 or c26 - where previous methods have been notoriously slow. In this letter, we address this deficiency by deriving a computationally efficient method for determining the limiting velocities of edge dislocations with reflection symmetry which is two orders of magnitude faster than the previous method.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Edge dislocation mediated anomalous charge transfer in face centered cubic high entropy alloys

The charge transfer in alloys dictates their structural and functional properties. The presence of the line defect can influence the charge transfer characteristics in alloys. The edge dislocation-volume misfit interaction in high entropy alloys is a critical area of interest concerning the development of accurate solid solution strengthening models for these materials. The evolution of the volume misfit of atoms is either studied empirically using Vegard's law or mechanistically using \emph{ab initio} calculations, without considering the effect of edge dislocation on charge transfer explicitly. In this work, we show the influence of edge dislocation on the charge transfer in CoCrFeMnNi, CoCrNi and CoNi using large-scale \emph{ab initio} calculations. The anomalous charge transfer characteristics, in terms of deviations from electronegativity trends, are demonstrated, which are dictated by electronegativity equalisation rather than pair-atom interactions. The deviation of atomic volume in the compressive and tensile stress regions of the edge dislocation is rationalised in terms of anomalous magneto-volume fluctuations in such alloys.

Ghosh, Swarnava [ORNL] (ORCID:0000000338005264)↗
DOE OSTI2019

Forming an Edge Dislocation Image at Anomalous X-ray Transmission

The features of forming section and projection topography images of an edge dislocation normal to the crystal surface are considered for the case of X-ray anomalous transmission. Experimental images are analyzed using numerical simulation of the diffraction experiment. A new mechanism for image formation of defects arranged near the output crystal surface has been proposed. Differences between topography images of dislocations and rosettes of local misorientations of reflecting planes have been established.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

The revised elastic field of an edge dislocation

We modify the traditional linear-elastic field of an edge dislocation. The modifications stem from symmetry and energy requirements imposed in terms of embedded (deformed) coordinates. These requirements are satisfied if a line force is added to the dislocation field. The modification to the stress field is expressed by coefficients that are a function only of Poisson’s ratio. Qualitatively, the field of the dislocation is increased in the glide direction and decreased in the climb direction. There are small changes to the field of a screw dislocation that do not entail the addition of a line force. Effects of nonlinearity, anisotropic elasticity, and image forces are briefly considered.

Hirth, J. P.↗