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Results for “ELECTRIC CONTACT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Thermal and electrical contact conductance studies

Prediction of electrical and thermal contact resistance for pressed, nominally flat contacts is complicated by the large number of variables which influence contact formation. This is reflected in experimental results as a wide variation in contact resistances, spanning up to six orders of magnitude. A series of experiments were performed to observe the effects of oxidation and surface roughness on contact resistance. Electrical contact resistance and thermal contact conductance from 4 to 290 K on OFHC Cu contacts are reported. Electrical contact resistance was measured with a 4-wire DC technique. Thermal contact conductance was determined by steady-state longitudinal heat flow. Corrections for the bulk contribution ot the overall measured resistance were made, with the remaining resistance due solely to the presence of the contact.

Vansciver, S. W.↗
NASA NTRS1977

Process for preparing liquid metal electrical contact device

The parts of an electrical contact device are treated by sputter etching to remove the parent metal oxide. Prior to exposure of the electrodes to any oxygen, a sacrificial metal is sputter deposited on the parts. Preferably this sacrificial metal is one that oxidizes slowly and is readily dissolved by the liquid metal. The sacrificial metal may then be removed from unwanted areas. The remainder of the ring and the probe to be wet by the liquid metal are submerged in the liquid metal or the liquid metal is flushed over these areas, preferably while they are being slightly abraded, unitl all the sacrificial material on these portions is wet by the liquid metal. In doing so the liquid metal dissolves the sacrificial metal and permanently wets the parent metal. Preferred materials used in the process and for the electrodes of electrical contact devices are high purity (99.0%) nickel or AISI type 304 stainless steel for the electrical contact devices, gallium as the liquid metal, and gold as the sacrificial material.

Lovell, R. R.↗
NASA NTRS1967

Thin film process forms effective electrical contacts on semiconductor crystals

Process makes microscopic, low-resistance electrical contacts on hexagonal n-type silicon carbide crystals used for microelectronic devices. A vacuum deposition of aluminum is etched to expose the bare silicon carbide where the electrical contacts are made. Sputtering alternating layers of tantalum and gold forms the alloy film.

Formigoni, N. P.↗
NASA NTRS1966

Sliding electrical contact materials

The results of research programs to develop sliding electrical contact materials, both brushes and slip rings, are discussed. Problems attendant to operating sliding contacts in a vacuum are defined; limitations of commercial materials in solving these problems are described, and special materials and surface finish conditions which have resulted in solutions to these problems are presented. Data from operational tests on the newly developed materials are compared with similar data obtained from materials now used as standards in consumer products. Possible commercial applications of the more efficient sliding contact materials are discussed briefly.

Sliding contact↗
NASA NTRS1977

Analytical study of space processing of immiscible materials for superconductors and electrical contacts

The results of a study conducted to determine the role space processing or materials research in space plays in the superconductor and electrical contact industries are presented. Visits were made to manufacturers, users, and research organizations connected with these products to provide information about the potential benefits of the space environment and to exchange views on the utilization of space facilities for manufacture, process development, or research. In addition, space experiments were suggested which could result in improved terrestrial processes or products. Notable examples of these are, in the case of superconductors, the development of Nb-bronze alloys (Tsuei alloys) and, in the electrical contact field, the production of Ag-Ni or Ag-metal oxide alloys with controlled microstructure for research and development activities as well as for product development. A preliminary experimental effort to produce and evaluate rapidly cooled Pb-Zn and Cu-Nb-Sn alloys in order to understand the relationship between microstructure and superconducting properties and to simulate the fine structure potentially achievable by space processing was also described.

Gelles, S. H.↗
NASA NTRS2001

Study of Electrical Contacts and Devices in Advanced Semiconductors

Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

Hall, H. P.↗