DOE OSTI2017
The effect of sputtering pressure on the surface/interface microstructure, crystal phase, mechanical properties and electrical characteristics of nanocrystalline W-Mo films is reported. The W-Mo films (≈300 nm) with variable microstructure were deposited under variable argon (Ar) sputtering pressure (P Ar ), which is varied in the range of 3-19 mTorr. X-ray diffraction analyses indicate that the W-Mo films crystallize in thermodynamically stable α-phase of W. However, the crystal-quality degradation occurs for W-Mo films deposited at higher P Ar due to difference in the adatom mobilities. The average grain size (d) of the W-Mo films was in the range of 11-24 nm; grain size decreases with increasing P Ar . The effect of P Ar and associated microstructure are significant on the mechanical characteristics; the hardness (H) and modulus of elasticity (E r ) of W-Mo films deposited at lower P Ar were higher but decreases continuously with increasing P Ar . The W-Mo films deposited under optimum sputtering pressure exhibit superior mechanical characteristics: H=40 GPa, E r =275 GPa, H/E r =0.8, and H 3 /E r 2 =0.145 GPa, which are higher compared to pure, α-phase W-films. The W-Mo films deposited at P Ar =3-9 mTorr exhibit high resistivity≈350-400 μΩ-cm, which decreases to 150-200 μΩ-cm for films deposited at higher P Ar . Based on the results, structure-mechanical-electrical property correlation in W-Mo films is established.