Piezoresistive Response of Quasi-One-Dimensional ZnO Nanowires Using an in Situ Electromechanical Device
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36 MATERIALS SCIENCE↗
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A triple quantum dot based nano-electromechanical memory device
Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Molybdenum-rhenium superconducting suspended nanostructures
Suspended superconducting nanostructures of MoRe 50%/50% by weight are fabricated employing commonly used fabrication steps in micro- and nano-meter scale devices followed by wet-etching with Hydro-fluoric acid of a SiO{sub 2} sacrificial layer. Suspended superconducting channels as narrow as 50 nm and length 3 μm have a critical temperature of ≈6.5 K, which can increase by 0.5 K upon annealing at 400 °C. A detailed study of the dependence of the superconducting critical current and critical temperature upon annealing and in devices with different channel widths reveals that desorption of contaminants is responsible for the improved superconducting properties. These findings pave the way for the development of superconducting electromechanical devices using standard fabrication techniques.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Phase-Control Enabled Superior Mechanical and Electrical Properties of Nanocrystalline Tungsten-Molybdenum Thin Films
Not provided.
Materials Science↗
Electromechanical memcapacitor model offering biologically plausible spiking.
In this article, we introduce a new nanoscale electromechanical device - a leaky memcapacitor - and show that it may be useful for the hardware implementation of spiking neurons. The leaky memcapacitor is a movableplate capacitor that becomes quite conductive when the plates come close to each other. The equivalent circuit of the leaky memcapacitor involves a memcapacitive and memristive system connected in parallel. In the leaky memcapacitor, resistance and capacitance depend on the same internal state variable, which is the displacement of the movable plate. We have performed a comprehensive analysis showing that several types of spiking observed in biological neurons can be implemented with the leaky memcapacitor. Significant attention is paid to the dynamic properties of the model. As in leaky memcapacitors the capacitive, leaking resistive, and reset functionalities are implemented naturally within the same device structure, their use will simplify the creation of spiking neural networks.
Zhang, Zixi↗
Thickness effect on the structural and electrical properties of poly-SiGe films
Graphical abstract: - Highlights: • Stress and Young's modulus of poly-SiGe film are linked to the grain columnar structure. • The above properties remain unchanged for poly-SiGe films thicker than 40 nm. • The point of transition is close to the electron mean free path for SiGe. • Both the resistivity and Hall mobility follow a similar trend. - Abstract: As lateral dimensions of electromechanical devices are scaled down to length scales comparable to electron mean free paths, the influence of thickness effect on their properties becomes sine qua non. This paper presents a detailed study of thickness effect on the Young's modulus, residual stress, resistivity and Hall mobility of ultrathin poly-Si{sub 11}Ge{sub 89} films deposited by low pressure chemical vapour deposition. The Young's moduli for the films thicker than ∼40 nm are close to the bulk value (135 GPa) while those of the thinner films are much lower. The reduction in resistivity and subsequent improved Hall mobility as thickness increases are discussed in light of surface morphology which is evident from atomic microscopy images. The near constant values of Young's modulus, resistivity and Hall mobility for the films thicker than ∼40 nm are attributed to the columnar grain structure as confirmed by the transmission electron microscopy images.
36 MATERIALS SCIENCE↗
Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers
Composition gradients, or dissimilar ferroelectric bilayers, demonstrate colossal electromechanical figures of merit attributed to the motion of ferroelastic domain walls. Yet, mechanistic understanding of polarization switching pathways that drive ferroelastic switching in these systems remains elusive. Here, the crucial roles of strain and electrostatic boundary conditions in ferroelectric bilayer systems are revealed, which underpin their ferroelastic switching dynamics. Using in situ electrical biasing in the transmission electron microscope (TEM), the motion of ferroelastic domain walls is investigated in a tetragonal (T) Pb(Zr,Ti)O 3 (PZT)/rhombohedral (R) PZT epitaxial bilayer system. Atomic resolution electron microscopy, in tandem with phase field simulations, indicates that ferroelastic switching is triggered by predominant nucleation at the triple domain junctions located at the interface between the T/R layers. Furthermore, this interfacial nucleation leads to systematic reversable reorientation of ferroelastic domain walls. Finally, deterministic ferroelastic domain switching, driven by the interfacial strain and electrostatic boundary conditions in the ferroelectric bilayer, provides a viable pathway toward novel design of miniaturized energy-efficient electromechanical devices.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Emergence of high piezoelectricity from competing local polar order-disorder in relaxor ferroelectrics
Relaxor ferroelectrics are known for outstanding piezoelectric properties, finding a broad range of applications in advanced electromechanical devices. Decoding the origins of the enhanced properties, however, have long been complicated by the heterogeneous local structures. Here, we employ the advanced big-box refinement method by fitting neutron-, X-ray-based total scattering, and X-ray absorption spectrum simultaneously, to extract local atomic polar displacements and construct 3D polar configurations in the classical relaxor ferroelectric Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 . Our results demonstrate that prevailing order-disorder character accompanied by the continuous rotation of local polar displacements commands the composition-driven global structure evolution. The omnidirectional local polar disordering appears as an indication of macroscopic relaxor characteristics. Combined with phase-field simulations, it demonstrates that the competing local polar order-disorder between different states with balanced local polar length and direction randomness leads to a flattening free-energy profile over a wide polar length, thus giving rise to high piezoelectricity. Our work clarifies that the critical structural feature required for high piezoelectricity is the competition states of local polar rather than relaxor.
42 ENGINEERING↗
Mimicking Mars: A vacuum simulation chamber for testing environmental instrumentation for Mars exploration
We have built a Mars environmental simulation chamber, designed to test new electromechanical devices and instruments that could be used in space missions. We have developed this environmental system aiming at validating the meteorological station Rover Environment Monitoring Station of NASA's Mars Science Laboratory mission currently installed on Curiosity rover. The vacuum chamber has been built following a modular configuration and operates at pressures ranging from 1000 to 10{sup −6} mbars, and it is possible to control the gas composition (the atmosphere) within this pressure range. The device (or sample) under study can be irradiated by an ultraviolet source and its temperature can be controlled in the range from 108 to 423 K. As an important improvement with respect to other simulation chambers, the atmospheric gas into the experimental chamber is cooled at the walls by the use of liquid-nitrogen heat exchangers. This chamber incorporates a dust generation mechanism designed to study Martian-dust deposition while modifying the conditions of temperature, and UV irradiated.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Stacking-dependent electronic structure of bilayer silicene
Bilayer silicene (BLS) is a class of material that possibly holds both topological and superconducting properties; however, its structure is not fully understood. By scanning stacking modes and lattice constants using first principles calculations, several meta-stable configurations are identified, including a slightly faulted-AA packing structure, named slide-2AA. Different from the metallic properties of conventional AA and AB stacking forms, band structure of slide-2AA bilayer presents a sizeable indirect energy gap of ∼1.16 eV. A metal-semiconductor phase transition along the sliding pathway with a small energy barrier is also observed, indicating its electronic properties can be easily tuned by applying small shear force along the BLS surface plane. Such unique quantitative relationship of structure and electronic properties has profound implications in nanoelectronics and electromechanical devices.
36 MATERIALS SCIENCE↗
Investigation of periodically driven systems by x-ray absorption spectroscopy using asynchronous data collection mode
Here, we report the development, testing, and demonstration of a setup for modulation excitation spectroscopy experiments at the Inner Shell Spectroscopy beamline of National Synchrotron Light Source - II. A computer algorithm and dedicated software were developed for asynchronous data processing and analysis. We demonstrate the reconstruction of X-ray absorption spectra for different time points within the modulation pulse using a model system. This setup and the software are intended for a broad range of functional materials which exhibit structural and/or electronic responses to the external stimulation, such as catalysts, energy and battery materials, and electromechanical devices.
36 MATERIALS SCIENCE↗
Colossal piezoresistance in narrow-gap Eu 5 In 2 Sb 6
Piezoresistance, the change of the electrical resistance (R) of a material in response to an applied mechanical stress (σ), is the driving principle of electromechanical devices such as strain gauges, accelerometers, and cantilever force sensors. Enhanced piezoresistance has been traditionally observed in two classes of uncorrelated materials: nonmagnetic semiconductors and composite structures. In this study, we report the discovery of a remarkably large piezoresistance in Eu 5 In 2 Sb 6 single crystals, wherein anisotropic metallic clusters naturally form within a semiconducting matrix due to electronic interactions. Eu 5 In 2 Sb 6 shows a highly anisotropic piezoresistance, and uniaxial pressure along [001] of only 0.4 GPa leads to a resistivity drop of >99.95%, which results in a colossal piezoresistance factor of 5000×10 –11 Pa –1 . Our result not only reveals the role of interactions and phase separation in the realization of colossal piezoresistance, but it also highlights a route to multifunctional devices with large responses to both pressure and magnetic field.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Ferroelectric materials toward next-generation electromechanical technologies
Ferroelectric materials have been widely used in various electromechanical devices, from ultrasonic transducers and actuators to mechanical energy harvesters. The key performance metrics of these devices, such as sensitivity, efficiency, and bandwidth of ultrasonic transducers, are largely determined by the piezoelectric properties. This Review highlights recent research progress in improving the piezoelectricity of ferroelectric materials and offers potential strategies for further enhancement to meet the ever-increasing demands for high-performance piezoelectric devices and systems. Here, it provides insights into the future development of ferroelectrics to address the increasing demands of emerging applications, including photoacoustic imaging and piezoelectric fans and motors in integrated circuit–enabled electronic devices. Additionally, it emphasizes the need to consider environmental impacts across the entire life cycle of ferroelectrics, from sourcing and manufacturing to usage and disposal.
36 MATERIALS SCIENCE↗
Lightweight Embedded Controller in Advanced FPGA SoC for Radar Signal Processing [Poster]
The objective of the project is to demonstrate that critical control functions can be implemented using little resources in modern microelectronics. A finite state machine (Figure 1) is implemented onto a field programmable gate array (FPGA). The functionality of the system is demonstrated by sending binary instructions to the controller. The controller transmits patterns through an LED, controls an electromechanical device, and uses pulse-width modulation (PWM) for radar functions.
42 ENGINEERING↗
A Guide to Current Limiting and Stability with Grid-Forming Inverters
The electric power grid is changing. For many decades, the synchronous generator - an electromechanical device invented in 1887 - has been the workhorse and backbone of power grids across the globe. Our entire infrastructure is built around it. But times change, and so does the power grid. Since the early 21st century, we have seen a gradual shift in modern power grids away from synchronous generators to ones dominated by power electronic inverter-based resources (IBRs). Sources such as photovoltaics, wind turbines, battery storage, fuel cells, and other technologies like high-voltage DC transmission interconnections all rely on an inverter to connect and interface with the grid. They are increasingly being installed on the grid to augment, or even replace, traditional energy sources. This change is a fundamental shift that brings tremendous technical challenges and questions: Can a power grid remain stable with many more inverter-based resources? How do we avoid more blackouts on the grid? How do we keep the grid secure and resilient during disturbances? After all, power electronic inverters are nothing like the big, rotating, iron-and-copper machines that the grid heavily relies on. Many of these questions can be answered by using grid-forming (GFM) inverters, yet many research challenges remain. This document explores GFM inverters and how they can help stabilize the future grid, especially during disturbances and contingencies. It summarizes a two-year research and development fellowship program at NREL. We point interested readers to more detailed works developed during the project along the way. Let's dive in
24 POWER TRANSMISSION AND DISTRIBUTION↗
High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient
AlN and AlScN thin films with 27% scandium (Sc) were synthesized by DC magnetron sputtering deposition and used to fabricate surface acoustic wave (SAW) devices. Compared with AlN-based devices, the AlScN SAW devices exhibit much better transmission properties. Scandium doping results in electromechanical coupling coefficient, K{sup 2}, in the range of 2.0% ∼ 2.2% for a wide normalized thickness range, more than a 300% increase compared to that of AlN-based SAW devices, thus demonstrating the potential applications of AlScN in high frequency resonators, sensors, and high efficiency energy harvesting devices. The coupling coefficients of the present AlScN based SAW devices are much higher than that of the theoretical calculation based on some assumptions for AlScN piezoelectric material properties, implying there is a need for in-depth investigations on the material properties of AlScN.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
The strain capacitor: A novel energy storage device
A novel electromechanical energy storage device is reported that has the potential to have high energy densities. It can efficiently store both mechanical strain energy and electrical energy in the form of an electric field between the electrodes of a strain-mismatched bilayer capacitor. When the charged device is discharged, both the electrical and mechanical energy are extracted in an electrical form. The charge-voltage profile of the device is suitable for energy storage applications since a larger portion of the stored energy can be extracted at higher voltage levels compared to a normal capacitor. Its unique features include the potential for long lifetime, safety, portability, wide operating temperature range, and environment friendliness. The device can be designed to operate over varied operating voltage ranges by selecting appropriate materials and by changing the dimensions of the device. In this paper a finite element model of the device is developed to verify and demonstrate the potential of the device as an energy storage element. This device has the potential to replace conventional energy storage devices.
36 MATERIALS SCIENCE↗
Noncontact excitation of multi-GHz lithium niobate electromechanical resonators
Abstract The demand for high-performance electromechanical resonators is ever-growing across diverse applications, ranging from sensing and time-keeping to advanced communication devices. Among the electromechanical materials being explored, thin-film lithium niobate stands out due to its strong piezoelectric properties and low acoustic loss. However, in nearly all existing lithium niobate electromechanical devices, the configuration is such that the electrodes are in direct contact with the mechanical resonator. This configuration introduces an undesirable mass-loading effect, producing spurious modes and additional damping. Here, we present an electromechanical platform that mitigates this challenge by leveraging a flip-chip bonding technique to separate the electrodes from the mechanical resonator. By offloading the electrodes from the resonator, our approach yields a substantial increase in the quality factor of these resonators, paving the way for enhanced performance and reliability for their device applications.
Instruments & Instrumentation↗