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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

Electron channeling contrast imaging (ECCI) is used to characterize misfit dislocations in heteroepitaxial layers of GaP grown on Si(100) substrates. Electron channeling patterns serve as a guide to tilt and rotate sample orientation so that imaging can occur under specific diffraction conditions. This leads to the selective contrast of misfit dislocations depending on imaging conditions, confirmed by dynamical simulations, similar to using standard invisibility criteria in transmission electron microscopy (TEM). The onset and evolution of misfit dislocations in GaP films with varying thicknesses (30 to 250 nm) are studied. This application simultaneously reveals interesting information about misfit dislocations in GaP/Si layers and demonstrates a specific measurement for which ECCI is preferable versus traditional plan-view TEM.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Comparison of Dislocation Characterization by Electron Channeling Contrast Imaging and Cross-Correlation Electron Backscattered Diffraction

The characterization and quantification of dislocations is predominately carried out using transmission electron microscopy (TEM). Nevertheless, the sample preparation necessary for TEM foils can be cumbersome and possibly introduce defects. Two other techniques for characterizing and quantifying dislocations are electron channeling contrast imaging (ECCI) and cross-correlation electron backscattered diffraction (CC-EBSD). ECCI is similar to TEM in that specific imaging (channeling or diffraction) conditions need to be established, but is carried out in a scanning electron microscope on bulk samples, resulting in less complex sample preparation. CC-EBSD measures subtle changes in orientation measured from EBSD patterns to calculate elastic strains and the Nye tensor to deduce and map the total geometrically necessary dislocation (GND) content. Furthermore, this work presented here compares the capabilities of ECCI and CC-EBSD to map dislocations generated from nanoindentation.

42 ENGINEERING↗
DOE OSTI2017

Comparison of dislocation characterization by electron channeling contrast imaging and cross-correlation electron backscattered diffraction

In this paper, the relative capabilities and limitations of electron channeling contrast imaging (ECCI) and cross-correlation electron backscattered diffraction (CC-EBSD) have been assessed by studying the dislocation distributions resulting from nanoindentation in body centered cubic Ta. Qualitative comparison reveals very similar dislocation distributions between the CC-EBSD mapped GNDs and the ECC imaged dislocations. Approximate dislocation densities determined from ECC images compare well to those determined by CC-EBSD. Nevertheless, close examination reveals subtle differences in the details of the distributions mapped by these two approaches. Finally, the details of the dislocation Burgers vectors and line directions determined by ECCI have been compared to those determined using CC-EBSD and reveal good agreement.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on {gamma}-LiAlO{sub 2} by metal organic vapor phase epitaxy.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Direct measurement of electron channeling in a crystal using scanning transmission electron microscopy

Self-focusing of an atomic-scale high-energy electron wave packet by channeling along a zone axis in crystalline silicon is directly measured by scanning transmission electron microscopy using thin epitaxial SrTiO{sub 3}(100) islands grown on Si(100) as test objects. As the electron probe propagates down a silicon atom column, it is progressively focused onto the column, resulting in a fourfold increase in the scattered signal at the channeling maximum. This results in an enhancement of the visibility of the SrTiO{sub 3} islands, which is lost if the sample is flipped upside down and the channeling occurs only after the probe scatters off the SrTiO{sub 3} layer. The evolution of the probe wave function calculated by the multislice method accurately predicts the trends in the channeling signal on an absolute thickness scale. We find that while electron channeling enhances the visibility of on-column atoms, it suppresses the contribution from off-column atoms. It can therefore be used as a filter to selectively image the atoms that are most aligned with the atomic columns of the substrate. By using this technique, coherent islands can be distinguished from relaxed islands. For SrTiO{sub 3} films formed in a topotactic reaction on Si(100), we show that only {approx}55% of the SrTiO{sub 3} is aligned with the Si atom columns. The fraction of coherent SrTiO{sub 3} islands on Si(100) can be increased by choosing growth conditions away from equilibrium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Comparative Response of Microchannel Plate and Channel Electron Multiplier Detectors to Penetrating Radiation in Space

Channel electron multiplier (CEM) and microchannel plate (MCP) detectors are routinely used in space instrumentation for measurement of space plasmas. Here, our goal is to understand the relative sensitivities of these detectors to penetrating radiation in space, which can generate background counts and shorten detector lifetime. We use 662 keV γ-rays as a proxy for penetrating radiation such as γ-rays, cosmic rays, and high-energy electrons and protons that are ubiquitous in the space environment. We find that MCP detectors are ~20 times more sensitive to 662 keV γ-rays than CEM detectors. This is attributed to the larger total area of multiplication channels in an MCP detector that is sensitive to electronic excitation and ionization resulting from the interaction of penetrating radiation with the detector material. In contrast to the CEM detector, whose quantum efficiency ε γ for 662 keVγ -rays is found to be 0.00175 and largely independent of detector bias, the quantum efficiency of the MCP detector is strongly dependent on the detector bias, with a power law index of 5.5. Lastly, background counts in MCP detectors from penetrating radiation can be reduced using MCP geometries with higher pitch and smaller channel diameter.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2016

Characterization of encapsulated quantum dots via electron channeling contrast imaging

A method for characterization of encapsulated epitaxial quantum dots (QD) in plan-view geometry using electron channeling contrast imaging (ECCI) is presented. The efficacy of the method, which requires minimal sample preparation, is demonstrated with proof-of-concept data from encapsulated (sub-surface) epitaxial InAs QDs within a GaAs matrix. Imaging of the QDs under multiple diffraction conditions is presented, establishing that ECCI can provide effectively identical visualization capabilities as conventional two-beam transmission electron microscopy. This method facilitates rapid, non-destructive characterization of sub-surface QDs giving immediate access to valuable nanostructural information.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Calibration of a 32 channel electron cyclotron emission radiometer on the HL-2A tokamak

A novel 32-channel electron cyclotron emission radiometer has been designed and tested for the measurement of electron temperature profiles on the HL-2A tokamak. This system is based on the intermediate frequency filter detection technique, and has the features of wide working frequency range and high spatial resolution. Two relative calibration methods have been investigated: sweeping the toroidal magnetic field and hopping the output frequency of the local oscillator. Preliminary results show that both methods can ensure reasonable profiles.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Using electron channeling contrast imaging to inform and improve the growth of high-efficiency GaAs solar cells on nanopatterned GaAs substrates

Patterned substrates provide opportunities for reducing the cost of high-efficiency III-V devices by incorporating mechanically weak layers beneficial for substrate reuse (e.g. by spalling). In this work, the functionality of electron channeling contrast imaging (ECCI) as a tool to efficiently understand and mitigate defect formation is exemplified by developing a process in which high-quality III-V material can be grown on nanopatterned GaAs substrates. Reactive ion etching used in the patterning process was found to damage the GaAs substrate surface, leading to the formation of stacking faults in the epitaxial material as observed by ECCI. Etching the patterned substrates in a 1 NH4OH: 1 H2O2: 50 DI H2O solution for 10 s prior to growth removed the substrate surface damage and stacking faults were no longer present. Growth of solar cell device structures initially produced samples with many macroscale flaws creating shunts in the devices, which complicated the assessment of material quality by device measurements. However, ECCI revealed that the epitaxial material surrounding macroscale flaws was free from any crystallographic defects such as stacking faults and threading dislocations. With this knowledge, we focused on refining the patterning process to eliminate the macroscale flaws. Solar cells were then grown on the improved nanopatterned substrates and exhibited device structures with defect densities less than 5 x 105 cm -2 and average conversion efficiency of 24.8%, nearly identical to devices grown on unpatterned epi-ready substrates (25.0%).

14 SOLAR ENERGY↗
DOE OSTI2016

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~10 12 inch –2 ). Here, we systematically show that these devices allow precise engineering of the resistance states, thus enabling large on–off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers

Thin gallium phosphide layers were deposited on (0 0 1) Silicon surfaces via organometallic vapor phase epitaxy and characterized by electron channeling contrast imaging (ECCI). Stacking fault pyramids at a density of up to 6 x 10 7 cm -2 were identified in the GaP nucleation layer by varying the diffraction conditions. We show that these defects originate at the GaP/Si interface and propagate on all four {1 1 1} planes. We observed that such stacking fault pyramids interact with the gliding of misfit dislocations during lattice-mismatched growth and enhance the threading dislocation density. The initial pulsing of TEGa and TBP during the nucleation of GaP on Silicon has been found to strongly influence the formation of those pyramidal defects. Changing the number of pulse cycles allowed us to lower their density by two orders of magnitude from 6 x 10 7 cm -2 to 4 x 10 5 cm -2 .

36 MATERIALS SCIENCE↗
DOE OSTI2018

Direct observation of dislocation structure evolution in SRF cavity niobium using electron channeling contrast imaging

Two major goals of superconducting radio frequency cavity research and development are achieving higher accelerating gradient and gaining the highest quality factor, a measure of efficiency. However, the consistent improvement of these performance metrics is restricted by many factors, one of which is microstructural defects, such as dislocation substructures within the material. In this work, dislocation evolution is compared in four samples extracted from a 2.8 mm thick large-grain niobium slice, with tensile axes chosen to generate specific dislocation structures during subsequent deformation. The four samples are (1) as-extracted, (2) extracted and annealed, (3) extracted and then deformed to 40% tensile strain, and (4) extracted, annealed at 800 °C 2 h, and then deformed to 40% strain. Electron channeling contrast imaging was performed on all samples to characterize initial dislocation density and dislocation structure evolution due to annealing and deformation, and related to the mechanical behavior observed in stress-strain curves. A fundamental understanding of dislocation evolution in niobium is necessary to develop computational models to simulate cavity forming, which could enable new processing methods for cavity fabrication to be identified that could lead to improved performance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Game theoretic modeling and optimization of competition and collaboration in dual channel electronic waste supply chains

The rapid growth of electronic waste (e-waste) presents critical challenges for sustainable resource recovery and environmental protection. This study develops a dual-channel closed-loop supply chain (CLSC) model formulated as a hierarchical Stackelberg game, that integrates dynamic pricing and cost-sharing mechanisms to optimize both economic and environmental outcomes. The model explicitly captures strategic interactions between manufacturer-led and third-party recycling channels, accounting for consumer behavior, regulatory incentives, and market competition. Numerical simulations conducted (implemented over a four-iteration horizon using a commercial optimization solver) show that, relative to the baseline equilibrium, manufacturer profit increases from 11.6 thousand USD to 37.9 thousand USD (+226.8%), total recycled volume rises from 7,848 to 7,942 units (+1.2%), and collector profit nearly doubles under cost-sharing, enabling more equitable profit distribution. Furthermore, scenario-based simulations across Sub-Saharan Africa, high-income economies, and emerging Asian industrial countries reveal that infrastructure quality, policy intensity, and labor costs critically shape recycling efficiency and profit allocation. These findings demonstrate that subsidies alone are insufficient to ensure system efficiency. Instead, coordinated strategies that integrate internal incentive alignment with context-sensitive policy support are required. Overall, this study offers a robust framework for designing resilient, efficient, and regionally adaptable e-waste management systems.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗