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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Review Article: Crystal alignment for high performance organic electronics devices

Organic electronics devices based on high-performance small-molecule organic semiconductors have gained substantial attention because of their unique advantages such as excellent charge transport, solution processability, and environmental stability. However, the intrinsic crystallization of small-molecule organic semiconductors is anisotropic, resulting in significant device performance variations of organic electronics devices. In this article, the authors review the various approaches and techniques developed to control and align the crystallization of some benchmark solution-processable, high-performance, small-molecule organic semiconductors, such as 6,13-bis(triisopropylsilylethynyl) pentacene, N,N'-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide, and 5,11-bis(triethylgermylethynyl)anthradithiophene. These alignment approaches are studied in the context of capillary force-based techniques, patterning-based techniques, solution-shearing-based techniques, and other miscellaneous techniques, including zone-casting, vertical flowing, air flow navigation, temperature gradient alignment, etc. The organic semiconductors and crystal alignment techniques reviewed in this article shed light on important relationship among crystallization, charge transport, and device performance and can be applied to various high-performance organic electronics devices, such as organic thin film transistors and solar cells.

42 ENGINEERING↗
NASA NTRS2008

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗
DOE OSTI2015

Study on the frequency characteristics of nanogap electron devices

Ballistic electron transport in the nanogap devices will make it practical to combine the advantages of solid-state devices and vacuum electron devices including high integration and high frequency characteristics. Although a number of experiments have been exploited on frequency characteristic in nanogap, less modeling or calculations were investigated at such scale yet. In this paper, the concept of mean flight time is proposed in order to theoretically determine the frequency in nanoscale. Traditionally, we have to first determine the frequency response diagram and then deduce the cut-off frequency. This work presents a new method for exploring the frequency characteristics of electron transport in a nanogap structure by calculations and numerical simulations. A double-gate structure was applied in the simulations, and the results suggest that the nanogap structure can perform in the THz range. Additionally, an equivalent circuit model was adopted to demonstrate the validity of this method. Our results provide a model for the intrinsic ballistic transportation of electrons inside the nanogap electron devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Sub-wavelength waveguide loaded by a complementary electric metamaterial for vacuum electron devices

We report the electromagnetic properties of a waveguide loaded by complementary electric split ring resonators (CeSRRs) and the application of the waveguide in vacuum electronics. The S-parameters of the CeSRRs in free space are calculated using the HFSS code and are used to retrieve the effective permittivity and permeability in an effective medium theory. The dispersion relation of a waveguide loaded with the CeSRRs is calculated by two approaches: by direct calculation with HFSS and by calculation with the effective medium theory; the results are in good agreement. An improved agreement is obtained using a fitting procedure for the permittivity tensor in the effective medium theory. The gain of a backward wave mode of the CeSRR-loaded waveguide interacting with an electron beam is calculated by two methods: by using the HFSS model and traveling wave tube theory; and by using a dispersion relation derived in the effective medium model. Results of the two methods are in very good agreement. The proposed all-metal structure may be useful in miniaturized vacuum electron devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Heating case for a portable electronic device

A case for an electronic device includes a housing for enclosing the electronic device and a removable heating device that may be placed in or on the housing for warming the electronic device without electricity from the electronic device. The removable heating device includes a pouch enclosing a supersaturated solution and a metal disk. The super saturated solution in the pouch undergoes an exothermic reaction when the disk is actuated.

Coulter, Joshua Oliver↗
DOE OSTI2018

Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices

GaN is an attractive material for high-power electronics due to its wide bandgap and large breakdown field. Verticalgeometry devices are of interest due to their high blocking voltage and small form factor. One challenge for realizing complex vertical devices is the regrowth of low-leakage-current p-n junctions within selectively defined regions of the wafer. Presently, regrown p-n junctions exhibit higher leakage current than continuously grown p-n junctions, possibly due to impurity incorporation at the regrowth interfaces, which consist of c-plane and non-basal planes. Here, we study the interfacial impurity incorporation induced by various growth interruptions and regrowth conditions on m-plane p-n junctions on free-standing GaN substrates. The following interruption types were investigated: (1) sample in the main MOCVD chamber for 10 min, (2) sample in the MOCVD load lock for 10 min, (3) sample outside the MOCVD for 10 min, and (4) sample outside the MOCVD for one week. Regrowth after the interruptions was performed on two different samples under n-GaN and p-GaN growth conditions, respectively. Secondary ion mass spectrometry (SIMS) analysis indicated interfacial silicon spikes with concentrations ranging from 5e16 cm -3 to 2e18 cm -3 for the n-GaN growth conditions and 2e16 cm -3 to 5e18 cm-3 for the p-GaN growth conditions. Oxygen spikes with concentrations ~1e17 cm -3 were observed at the regrowth interfaces. Carbon impurity levels did not spike at the regrowth interfaces under either set of growth conditions. We have correlated the effects of these interfacial impurities with the reverse leakage current and breakdown voltage of regrown m-plane p-n junctions.

42 ENGINEERING↗
DOE OSTI2015

SU-E-T-447: Growth of Metal Whiskers Under External Beam Irradiation: Experimental Evidence and Implications in Medical Electronic Devices for Radiation Therapy Treatments

Purpose: Thin metallic protrusions, termed “whiskers,” have been identified as a cause of failure in devices ranging from satellites to pacemakers. For decades, lead was used in tin-based soldering alloys to suppress whisker formation. With the adoption of the Restriction of Hazardous Substances act and the expiration of its exemption on medical devices, including implanted medical devices (IMDs), electronic circuits are required to be lead-free as of July 2014. The effect of radiation on such soldering components remains unknown. Methods: We have irradiated a thin (150 nm) tin metal layer, deposited on a 3 mm thick glass substrate, with a 6 MeV medical linac (Varian TrueBeam) electron beam in five 2-hour long sessions. After receiving ∼10 kGy, whisker growth on the sample was assessed with scanning electron microscopy and compared to a reference sample not exposed to radiation. Results: After 10 hours of irradiation, the sample was found to develop intense whisker infestation, while the reference sample remained in its pristine as-deposited condition. Repeating the same irradiation schedule generated more and longer whiskers. The observed phenomenon can be explained through charge accumulation in the glass substrate, generating an electric field that promotes whisker growth. The observed substrate glass darkening under irradiation points towards development of color centers related to charge trapping. Experiments on the same type of samples with direct application of the external field in a capacitor-like setting also resulted in intense whisker growth. Conclusion: Extreme care should be taken in dealing with all electronic devices, especially IMDs, produced with lead-free solder and components, subject to radiation exposure. While in our experiments strong electric fields were intentionally generated to accelerate whisker growth over hours, in everyday use the circuit soldering may cause problems in a matter of days or months. Designated reliability testing under radiation must be conducted. This work is partially supported by NRC grant No. NRC-HQ-12-G-38-0042.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Visually undistorted thin film electronic devices

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

Hammond, Scott R.↗
DOE OSTI2023

Visually undistorted thin film electronic devices

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

Hammond, Scott R.↗
DOE OSTI2024

Visually undistorted thin film electronic devices

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

Hammond, Scott R.↗
DOE OSTI2024

Designing Ta C Virtual Substrates for Vertical Al x Ga 1 − x N Power Electronics Devices

Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2017

Appendage mountable electronic devices conformable to surfaces

Disclosed are appendage mountable electronic systems and related methods for covering and conforming to an appendage surface. A flexible or stretchable substrate has an inner surface for receiving an appendage, including an appendage having a curved surface, and an opposed outer surface that is accessible to external surfaces. A stretchable or flexible electronic device is supported by the substrate inner and/or outer surface, depending on the application of interest. The electronic device in combination with the substrate provides a net bending stiffness to facilitate conformal contact between the inner surface and a surface of the appendage provided within the enclosure. In an aspect, the system is capable of surface flipping without adversely impacting electronic device functionality, such as electronic devices comprising arrays of sensors, actuators, or both sensors and actuators.

42 ENGINEERING↗
DOE OSTI2018

Appendage mountable electronic devices conformable to surfaces

Disclosed are appendage mountable electronic systems and related methods for covering and conforming to an appendage surface. A flexible or stretchable substrate has an inner surface for receiving an appendage, including an appendage having a curved surface, and an opposed outer surface that is accessible to external surfaces. A stretchable or flexible electronic device is supported by the substrate inner and/or outer surface, depending on the application of interest. The electronic device in combination with the substrate provides a net bending stiffness to facilitate conformal contact between the inner surface and a surface of the appendage provided within the enclosure. In an aspect, the system is capable of surface flipping without adversely impacting electronic device functionality, such as electronic devices comprising arrays of sensors, actuators, or both sensors and actuators.

42 ENGINEERING↗
DOE OSTI2019

Appendage mountable electronic devices conformable to surfaces

Disclosed are appendage mountable electronic systems and related methods for covering and conforming to an appendage surface. A flexible or stretchable substrate has an inner surface for receiving an appendage, including an appendage having a curved surface, and an opposed outer surface that is accessible to external surfaces. A stretchable or flexible electronic device is supported by the substrate inner and/or outer surface, depending on the application of interest. The electronic device in combination with the substrate provides a net bending stiffness to facilitate conformal contact between the inner surface and a surface of the appendage provided within the enclosure. In an aspect, the system is capable of surface flipping without adversely impacting electronic device functionality, such as electronic devices comprising arrays of sensors, actuators, or both sensors and actuators.

Rogers, John A.↗