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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Electron-induced chemical transformation of vapor-phase synthesized hybrid resist materials for EUV and beyond EUV lithography

Here, in this study, we utilize an in situ Fourier transform infrared (FTIR) spectroscopy chamber equipped with an electron flood gun to comprehensively investigate the electron-induced chemical transformations in advanced inorganic–organic hybrid resist thin films. The characteristics of the electron gun were assessed, showing a detectable current decrease with increasing Faraday cup bias voltage, confirming that the electron energies impacting the sample were within the expected range. This unique FTIR system was applied to study two hybrid resist thin-film systems, Al–HQ and Zn–HQ, both exhibiting saturation growth characteristics at 150 °C. Results revealed that Al–HQ demonstrated superior electron sensitivity compared to Zn–HQ at energies ≤ 100 eV. Chemical changes observed were consistent with previous findings, underscoring the potential of this methodology to elucidate exposure mechanisms. This research contributes to the fundamental understanding necessary for the development of advanced resist materials for the next-generation nanolithography applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Temporal pre-pulse shaping in dual pulse laser produced plasma for the optimization of the EUV source in tin microdroplet system

Dual-laser beams interacting with small droplets of liquid tin are currently the most efficient systems for producing the 13.5 nm EUV photon radiation source required for the next generation microchips. Usually, EUV light is produced during the second main-pulse stage, while the pre-pulse (PP) is used for target preparation, i.e., droplet preheating, vaporization, and target deformation. However, the PP laser energy can be utilized more efficiently if the EUV producing plasma is being developed during the PP stage as well. In this work, we study the ways of optimization of the PP laser temporal shape to achieve conditions for maximum EUV output during the pre-pulse. The size of the deformed droplet is kept optimized for the following main laser pulse. Our simulations showed a significant increase in the EUV output at the pre-pulse stage when a ramping profile is used for the laser temporal shape. Using the ramped square pre-pulse produces 24% gain in the EUV output in comparison with the standard Gaussian temporal profile (i.e., regular Nd:YAG shape) for the same energy of the laser pulse.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Acceleration mechanisms of energetic ion debris in laser-driven tin plasma EUV sources

Laser-driven tin plasmas are driving new-generation nanolithography as sources of extreme ultraviolet (EUV) radiation centered at 13.5 nm. A major challenge facing industrial EUV source development is predicting energetic ion debris produced during the plasma expansion that may damage the sensitive EUV channeling multilayer optics. Gaining a detailed understanding of the plasma dynamics and ion acceleration mechanisms in these sources could provide critical insights for designing debris mitigation strategies in future high-power EUV sources. Here, we develop a fully kinetic model of tin-EUV sources using one-dimensional particle-in-cell simulations to study ion debris acceleration, which will be valuable for cross-validation of radiation-hydrodynamic simulations. An inverse-bremsstrahlung heating operator is used to model the interaction of a tin target with an Nd:YAG laser, and thermal conduction is included through a Monte Carlo Coulomb collision operator. While the large-scale evolution is in reasonable agreement with analogous hydrodynamic simulations, the significant timescale for collisional equilibration between electrons and ions allows for the development of prominent two-temperature features. A collimated flow of energetic ions is produced with a spectrum that is significantly enhanced at high energies compared to fluid simulations. The dominant acceleration mechanism is found to be a large-scale electric field supported mainly by the electron pressure gradient, which is enhanced in the kinetic simulations due to the increased electron temperature. We discuss the implications of these results for future modeling of tin-EUV sources and the development of debris mitigation schemes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

In Situ Analysis of Electron-Induced Chemical Transformations in Vapor-Phase-Synthesized Al-Based Inorganic–Organic Hybrid Thin Films for EUV Resist Platform

The rapid advancement and stringent requirements of extreme ultraviolet (EUV) lithography technology necessitate the development of advanced photoresist systems for next-generation microelectronics. Recent studies have demonstrated that inorganic-based hybrid photoresists offer notable improvements in EUV sensitivity, etch resistance, and greater insusceptibility to pattern collapse compared to their purely organic counterparts. However, variations in the synthesis/coating approaches and chemistry of inorganic–organic photoresists can result in distinct exposure mechanisms. In this work, an Al-based hybrid thin film resist system synthesized via molecular (atomic) layer deposition (MLD or MALD) is explored, focusing on its electron-beam and EUV patterning mechanisms. The Al-based hybrid thin films are deposited using trimethylaluminum (TMA) and the organic precursor hydroquinone, exhibiting a saturated growth rate within the temperature range of 150–200°C. In diluted tetramethylammonium hydroxide (TMAH)-based developer solutions, the electron-irradiated Al-based hybrid thin film system behaves as a negative tone resist, achieving a sensitivity of 10.4 mC/cm 2 at 0.1 kV electron beam lithography (EBL). Chemical changes induced by electron exposure are also analyzed in this study using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and a unique infrared spectroscopy setup, revealing the potential cross-linking pathways. To further correlate the electron-induced chemical transformations with those mediated by EUV irradiations, a combination of X-ray photoemission electron microscopy/low-energy electron microscopy (XPEEM/LEEM) system is also employed. In conclusion, this study provides critical insights into the mechanisms underlying solubility switching and contributes to the design of advanced resist materials for EUV lithography.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Multi-diagnostic characterization of laser-produced tin plasmas for EUV lithography

We present a comprehensive characterization of laser-produced tin (Sn) plasmas relevant to extreme ultraviolet (EUV) lithography using a multi-diagnostic suite integrated into the new experimental platform, “SparkLight.” Tin plasmas are generated by irradiating a continuously moving tin-coated wire with laser pulses (1064 nm, 10 ns, up to 5.7 × 10 10 W/cm 2 ) and probed via coherent Thomson scattering, laser interferometry, and EUV emission spectroscopy. Thomson scattering measurements reveal electron temperatures and densities that decay with distance from the target. Densities derived from Thomson scattering are cross-validated against laser interferometry, showing excellent agreement. Correlating the results of these laser diagnostics with spatially resolved EUV spectroscopy suggests that the bulk of useful EUV emission originates within 150 μm of the target and is generated under suboptimal plasma conditions. This work demonstrates a practical integrated approach for plasma characterization in EUV source development.

Musikhin, S. [Princeton Plasma Physics Laboratory ↗
DOE OSTI2021

Chemical and structural characterization of EUV photoresists as a function of depth by standing-wave x-ray photoelectron spectroscopy

The success in the miniaturization of the electronic device constituents depends mostly on the photolithographic techniques. Recently, to achieve patterning at the sub-10-nm node, extreme ultraviolet (EUV) lithography has been introduced into high volume production. Continued scaling of EUV via increased numerical aperture to achieve nodes at 3-nm and below requires the development of fundamentally new patterning materials and new characterization methods. Current EUV-resist film thicknesses are in the 20- to 40-nm range, and further thickness reduction is required for the next generation. Therefore, interfaces become exceedingly important, and the properties of the resist film would be dominated by top and bottom interfacial effects. X-ray photoelectron spectroscopy (XPS) combined with standing-wave excitation (SW-XPS), a fairly new method in the EUV lithography field, previously had been largely applied in multilayers and superlattices for characterizing the composition and electronic structure of buried layers and interfaces as a function of depth. We applied the SW-XPS method to organic/inorganic photoresists to provide depth-selective information on their structural and chemical conditions of as a function of temperature, EUV exposure, different underlayers, and other fundamental parameters. As a first attempt, we perform an SW-XPS feasibility study on self-assembled monolayer (SAM) films after exposure to an electron beam. By SW-XPS, we determined that the interface between the Al 2 O 3 underlayer and the SAMs is smooth, with a mean roughness of about 0.2 nm. Moreover, we determined that the SAM chains are, on average, tilted by 1/430 deg off the sample normal. The SW-XPS results also suggest that the SAM is not a perfectly aligned and uniform monolayer, with some areas having thickness higher than a single monolayer. We demonstrated that SW-XPS can provide useful information on ultrathin materials with high potential for being used as a characterization method of organic/inorganic photoresists.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Inspection of next-generation EUV resists with nano-projectile secondary ion mass spectrometry

There is a rapidly growing need for new materials for extreme ultraviolet (EUV) lithography, which incorporate high EUV absorbing elements. Hybrid resists, which are a combination of inorganic and organic moieties, are promising as they offer both high EUV sensitivity and high etch resistance. However, there is a glaring lack of methods to examine the uniformity of these important materials at the nanoscale. We examine the capabilities of nano-projectile secondary ion mass spectrometry (NP-SIMS) to investigate hybrid resists. NP-SIMS is a mass spectrometry-based technique with high lateral resolution. Using NP-SIMS, a surface is probed stochastically with a suite of individual projectiles, 10 6 to 10 7 in total, separated in time and space. Examining these individual mass spectra allows for nanoscale investigation of the uniformity of the surface. We evaluated the performance of NP-SIMS using samples of poly(methyl methacrylate) (PMMA) infiltrated with varying amounts of InO x via vapor-phase infiltration (VPI), an organic–inorganic hybridization method derived from atomic layer deposition. Here, we found that NP-SIMS measurements contained abundant characteristic ions related to both the PMMA and infiltrated In. The intensity of In atomic ions increased linearly with the number of infiltration cycles; however, the uniformity of In and PMMA varied with the number of infiltration cycles. After one cycle, we found that both the PMMA and In were relatively inhomogeneous. The homogeneity improved with subsequent infiltration cycles. In addition, NP-SIMS measurements contained characteristic ions related to the infiltration reaction and provided insights into the VPI mechanism. Overall, the results show that NP-SIMS is capable of examining both the inorganic and organic moieties in a hybrid resist and will be an important method for understanding the performance of these materials for use in EUV lithography.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Review of the 1st EUV Light Sources Code Comparison Workshop

We review the results of the 1 st Extreme Ultraviolet (EUV) Light Sources Code Comparison Workshop. The goal of this workshop was to provide a platform for specialists in EUV light source plasma modeling to benchmark and validate their numerical codes using well-defined case studies. Detailed consideration of a plethora of atomic collisional and radiative processes is required for modeling EUV light source plasmas. Eight institutions spanning four countries contributed data to the workshop. Two topics were addressed, namely (i) the atomic kinetics and radiative properties of tin plasmas under EUV-generating conditions and (ii) laser absorption in a fully ionized, one-dimensional hydrogen plasma. In this paper, we summarize the key findings of the workshop and outline plans for future iterations of the code comparison activity.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

EUV debris mitigation using magnetic nulls

Next generation EUV sources for photolithography use light produced by laser-produced plasmas (LPP) from ablated tin droplets. A major challenge for extending the lifetime of these devices is mitigating damage caused by deposition of tin debris on the sensitive collection mirror. Especially difficult to stop are high energy (up to 10 keV) highly charged tin ions created in the plasma. Existing solutions include the use of stopping gas, electric fields, and magnetic fields. One common configuration consists of a magnetic field perpendicular to the EUV emission direction, but such a system can result in ion populations that are trapped rather than removed. Here we investigate a previously unconsidered mitigation geometry consisting of a magnetic null by performing full-orbit integration of the ion trajectories in an EUV system with realistic dimensions and optimize the coil locations for the null configuration. The magnetic null prevents a fraction of ions from hitting the mirror comparable to that of the perpendicular field, but does not trap any ions due to the chaotic nature of ion trajectories that pass close to the null. This technology can potentially improve LPP-based EUV photolithography system efficiency and lifetime and may allow for a different, more efficient formulation of buffer gas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Line identification of boron and nitrogen emissions in EUV and VUV wavelength ranges in the impurity powder dropping experiments of LHD and its application to spectroscopic diagnostics

An impurity powder dropper was installed in the 21st campaign of the Large Helical Device experiment (Oct. 2019–Feb. 2020) under a collaboration between the National Institute for Fusion Science and the Princeton Plasma Physics Laboratory for the purposes of real-time wall conditioning and edge plasma control. In order to assess the effective injection of the impurity powders, spectroscopic diagnostics were applied to observe line emission from the injected impurity. Therefore, extreme-ultraviolet (EUV) and vacuum-ultraviolet (VUV) emission spectra were analyzed to summarize observable impurity lines with B and BN powder injection. Emission lines released from B and N ions were identified in the EUV wavelength range of 5–300 Å measured using two grazing incidence flat-field EUV spectrometers and in the VUV wavelength range of 300–2400 Å measured using three normal incidence 20 cm VUV spectrometers. BI–BV and NIII–NVII emission lines were identified in the discharges with the B and BN powder injection, respectively. Useful B and N emission lines which have large intensities and are isolated from other lines were successfully identified as follows: BI (1825.89, 1826.40) Å (blended), BII 1362.46 Å, BIII (677.00, 677.14, 677.16) Å (blended), BIV 60.31 Å, BV 48.59 Å, NIII (989.79, 991.51, 991.58) Å (blended), NIV 765.15 Å, NV (209.27, 209.31) Å (blended), NVI 1896.80 Å, and NVII 24.78 Å. Applications of the line identifications to the advanced spectroscopic diagnostics were demonstrated, such as the vertical profile measurements for the BV and NVII lines using a space-resolved EUV spectrometer and the ion temperature measurement for the BII line using a normal incidence 3 m VUV spectrometer.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Hybrid chemical characterization of latent images in EUV resist with 12 nm half-pitch features

With the advancement of high numerical aperture extreme ultraviolet (EUV) lithography, the new platform will enable chipmakers to achieve critical dimensions of 8 nm. However, resist materials face significant challenges in delivering increased sensitivity while managing rising stochastic variations. We aim to develop comprehensive techniques to characterize the chemical profile of latent images, stored in EUV resists after exposure and postexposure baking, which is essential for understanding the origin of stochastic effects. Infrared photo-induced force microscopy (IR PiFM) is a bimodal atomic force microscopy technique combined with an infrared light source, allowing for simultaneous sub-5 nm topographic and chemical characterization within a localized environment. Critical-dimension resonant soft X-ray scatterometry (CD-RSoXS) provides statistical data that reveal structural and chemical information for comparative analysis. For the first time, IR PiFM has been used to chemically map the latent images of EUV resists (after exposure and postexposure baking) at a record high resolution of 12 nm half-pitch, enabling nondestructive analysis of patterns prior to development. Furthermore, CD-RSoXS offers direct experimental observation and comparison of exposed, postexposure baked, and developed patterns, which align with the IR PiFM results. We demonstrate that the IR PiFM technique offers valuable insights into both high spatial resolution and local chemical information simultaneously. In addition, CD-RSoXS provides statistical results that support our main findings. This hybrid metrology approach leverages a multifaceted dataset by combining the most reliable information from each source, which is essential for a comprehensive understanding of the stochastic effects in EUV lithography processes.

O’Reilly, Padraic↗
DOE OSTI2026

Recent efforts of vapour-phase strategies for EUV resist toward high- and hyper-NA extreme ultraviolet lithography

Extreme ultraviolet lithography (EUVL, λ = 13.5 nm) is critical for sub-1 nm technology nodes but remains constrained by inherent trade-offs among resolution, line-edge roughness (LER), and sensitivity. Stochastic effects originating from photon shot noise, low-energy secondary electron blur, and the random distribution of resist components further limit its advancement toward high numerical-aperture (NA, NA = 0.55) and hyper-NA (NA ≥0.75) EUVL. While the optimization of spin-on chemically amplified resists (CARs) continues, metal-oxide resists (MORs) have emerged as strong candidates for next-generation EUVL by incorporating metals with high EUV absorption coefficients, which enhances both resist sensitivity and etch resistance during pattern transfer. Besides spin-coating, recent advances in vapour-phase techniques, such as vapour-phase infiltration (VPI), chemical vapour deposition (CVD), and molecular atomic layer deposition (MALD), offer promising pathways to achieve new resist platforms, such as dry resists, that satisfy the stringent thickness and uniformity requirements of next-generation EUVL. These methods enable the direct incorporation of metal species into existing resist matrices or the formation of hybrid inorganic–organic resist platforms, thereby improving film uniformity, etch durability, and pattern fidelity while mitigating stochastic defects. This review highlights the latest advancements in vapour-phase-synthesized EUV resists, emphasizing material design, lithographic performance, and the underlying exposure mechanisms. Although still emerging, vapour-phase strategies are paving the way for an all-dry integration framework that could improve EUV patterning workflows and meet the demands of future technology nodes.

36 MATERIALS SCIENCE↗
DOE OSTI2025

High precision monitoring of outgassing species in model EUV photoresists with a cavity ring-down spectrometer

Extreme ultraviolet (EUV) photoresists play a pivotal role in advancing nanopatterning technologies by balancing image quality and sensitivity. The outgassing behavior of photoresist thin films under EUV and deep ultraviolet (DUV) exposure reveals chemical details relevant to their performance. This study focuses on utilizing an analytical technique not previously used in photolithography, the tabletop cavity ring-down spectrometer, to investigate outgassing dynamics in EUV photoresists, enabling precise chemical identification and deeper insights into resist processing. The spectrometer’s enhanced laser path length (~20 km) and broadband absorption capabilities in the CH overtone region allow for sensitive and temporally resolved detection of outgassed species. Using a model resist comprising a polymer matrix with a photoacid generator and quencher, we analyzed the influence of time delays between exposure and Post-Exposure Bake (PEB) as well as storage under varying environmental conditions. Suppression of isobutylene outgassing and thickness loss was observed with extended delays between exposure and PEB, potentially linked to water absorption and acid deactivation. The technique proved highly effective in distinguishing subtle chemical differences between processing stages. Delay times and their environmental conditions, particularly humidity, reduce outgassing and thickness loss of photoresists during PEB, suggesting decreased acid-driven deprotection. This can potentially impact sensitivity, defectivity, and roughness of resist patterns, necessitating precise monitoring and control.

Lüttgenau, Bernhard↗
DOE OSTI2022

Probing ultrafast excited-state dynamics using EUV-IR six-wave-mixing emission spectroscopy

Non-linear processes such as four-wave-mixing have become instrumental in attosecond EUV spectroscopy. Using EUV high harmonics in conjunction with collinear near-infrared and mid-infrared fields, we extended this approach to high-order-mixing between three colors. Specifically, we find that atomic resonances in neon exhibit a significant cross section for six-wave mixing. The MIR probe frequency tunability in our multicolor scheme is employed to access several optically dark resonances and probe the quantum beat of a coherent electronic wavepacket using background-free EUV emission as a diagnostic. This technique can be easily extended to other atomic and molecular systems, and opens the door to multi-dimensional non-linear spectroscopy.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

High-harmonic spin-shearing interferometry for spatially resolved EUV magneto-optical spectroscopy

We present a method for achieving hyperspectral magnetic imaging in the extreme ultraviolet (EUV) region based on high-harmonic generation (HHG). By interfering two mutually coherent orthogonally-polarized and laterally-sheared HHG sources, we create an EUV illumination beam with spatially-dependent ellipticity. By placing a magnetic sample in the beamline and sweeping the relative time delay between the two sources, we record a spatially resolved interferogram that is sensitive to the EUV magnetic circular dichroism of the sample. This image contains the spatially-resolved magneto-optical response of the sample at each harmonic order, and can be used to measure the magnetic properties of spatially inhomogeneous magnetic samples.

Optics↗
DOE OSTI2022

Mechanistic Advantages of Organotin Molecular EUV Photoresists

Here, extreme ultraviolet (EUV)-induced radiation exposure chemistry in organotin-oxo systems, represented by the archetypal [(R-Sn) 12 O 14 (OH) 6 ](A) 2 cage, has been investigated with density functional theory. Upholding existing experimental evidence of Sn-C cleavage-dominant chemistry, computations have revealed that either electron attachment or ionization can single-handedly trigger tin-carbon bond cleavage, partially explaining the current EUV sensitivity advantage of metal oxide systems. We have revealed that tin atoms at different parts of the molecule react differently to ionization and electron attachment and have identified such selectivity as a result of local coordination chemistry instead of the macro geometry of the molecule. An ionization-deprotonation pathway has also been identified to explain the observed evolution of an anion conjugate acid upon exposure and anion mass dependence in resist sensitivity.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2021

EUV and Hard X-ray Hartmann Wavefront Sensing for Optical Metrology, Alignment and Phase Imaging

For more than 15 years, Imagine Optic have developed Extreme Ultra Violet (EUV) and X-ray Hartmann wavefront sensors for metrology and imaging applications. These sensors are compatible with a wide range of X-ray sources: from synchrotrons, Free Electron Lasers, laser-driven betatron and plasma-based EUV lasers to High Harmonic Generation. In this paper, we first describe the principle of a Hartmann sensor and give some key parameters to design a high-performance sensor. We also present different applications from metrology (for manual or automatic alignment of optics), to soft X-ray source optimization and X-ray imaging.

20 metrology↗
DOE OSTI2022

Optimization of echo-enabled harmonic generation toward coherent EUV and soft X-ray free-electron laser at NSLS-II

Prebunching via echo-enabled harmonic generation (EEHG) is an efficient way to reduce the radiator length and improve the longitudinal coherence as well as output stability in storage-ring-based free-electron lasers. We propose a conceptual design, which uses two straight sections to seed coherent extreme-ultraviolet (EUV) and soft X-ray emission with nearly MHz repetition rate. To take the large energy spread (10 –3 ) of a storage ring into account and utilize the existing bending magnets between the two straight sections as the first chicane, we implement a special modeling tool, named EEHG optimizer. This tool has been successfully applied to maximize the prebunching with a reasonably low energy modulation, thereby generating intense coherent X-ray pulses within a short undulator length (a few meters) limited by the available space of a storage ring. Numerical simulations confirm that the optimized EEHG parameters can be directly applied to generate a 10 MW scale peak power with fully coherent ultrafast EUV to soft X-ray pulses based on the NSLS-II parameters. This method can be easily extended to other types of diffraction-limited storage rings.

36 MATERIALS SCIENCE↗