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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

AC electrical transport detection of magnetic properties of small, granular, and heterogeneous samples

Experimental constraints and sample limitations can preclude ideal measurements of electrical transport properties of materials. In such situations, AC electrical transport methods are often employed due to a significant increase in signal-to-noise ratio they can provide. However, dynamic effects that are not often accounted for may be present that may modify the signals in these measurements. In particular, dynamic filtering effects are prominent in small, granular, and heterogeneous materials. We demonstrate that a lock-in amplifier based circuit can distinguish between these DC transport and AC filtering effects. Here, we further demonstrate that this filtering can reveal distinct signatures of magnetic transitions while providing a measure of sample quality.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Nonlinear electrical transport near the metal–insulator transition in V 4 O 7 thin films

Nonlinear electrical transport associated with correlated electronic states has been widely investigated in transition-metal oxides near metal–insulator transitions. Here, in this study, we investigate nonlinear transport and threshold switching in sputter-deposited V 4 O 7 thin films grown on fused silica substrates. Temperature-dependent transport measurements show a metal–insulator transition near 240 K with negligible thermal hysteresis, defining the temperature scale that governs the nonlinear electrical response. Current–voltage measurements reveal reproducible bipolar threshold switching over a broad temperature range, with the threshold voltage decreasing systematically as the transition temperature is approached. Electrothermal finite-element simulations reproduce the measured switching characteristics and show that switching occurs when localized Joule heating drives a confined region of the device toward the transition temperature. The simulated peak local temperature at threshold lies close to the intrinsic metal–insulator transition temperature of V 4 O 7 , establishing that the nonlinear electrical response originates from electrothermal feedback acting on the strongly temperature-dependent conductivity near the transition. These results identify V 4 O 7 thin films as a model correlated-oxide system in which volatile threshold switching emerges from proximity to an extended metal–insulator transition.

25 ENERGY STORAGE↗
DOE OSTI2025

Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe 3 , 2H-TaS 2 , and Cr 2 Si 2 Te 6 Crystals

Electrical transport in 2D materials exhibits unique behaviors due to reduced dimensionality, broken symmetries, and quantum confinement. It serves as both a sensitive probe for the emergence of coherent electronic phases and a tool to actively manipulate many-body correlated states. Exploring their interplay and interdependence is crucial but remains underexplored. This review integratively cross-examines the atomic and electronic structures and transport properties of van der Waals-layered crystals ZrTe 3 , 2H-TaS 2 , and Cr 2 Si 2 Te 6 , providing a comprehensive understanding and uncovering new discoveries and insights. A common observation from these crystals is that modifying the atomic and electronic interface structures of 2D van der Waals interfaces using heteroatoms significantly influences the emergence and stability of coherent phases, as well as phase-sensitive transport responses. In ZrTe 3 , substitution and intercalation with Se, Hf, Cu, or Ni at the 2D vdW interface alter phonon–electron coupling, valence states, and the quasi-1D interface Fermi band, affecting the onset of CDW and SC, manifested as resistance upturns and zero-resistance states. We conclude here that these phenomena originate from dopant-induced variations in the lattice spacing of the quasi-1D Te chains of the 2D vdW interface, and propose an unconventional superconducting mechanism driven by valence fluctuations at the van Hove singularity, arising from quasi-1D lattice vibrations. Short-range in-plane electronic heterostructures at the vdW interface of Cr 2 Si 2 Te 6 result in a narrowed band gap. The sharp increase in in-plane resistance is found to be linked to the emergence and development of out-of-plane ferromagnetism. The insertion of 2D magnetic layers such as Mn, Fe, and Co into the vdW gap of 2H-TaS 2 induces anisotropic magnetism and associated transport responses to magnetic transitions. Overall, 2D vdW interface modification offers control over collective electronic behavior, transport properties, and their interplays, advancing fundamental science and nanoelectronic devices.

2D van der Waals interfaces↗
DOE OSTI2025

Investigation of magnetic and electrical transport properties of YMB 4 (M = Cr, Fe, and Co) compounds

We have studied the structural, magnetic, and electrical transport properties of the YMB 4 series of compounds (M= Cr, Fe, and Co). These materials exhibit high stability and possess notable refractory and thermoelectric properties. Furthermore, recent theoretical predictions suggest that some of these compounds may display quantum magnetism and dimer formation among the magnetic ions. We have synthesized almost single phase YMB 4 compounds in the orthorhombic crystal structure (space group Pbam) using arc-melting and annealing. The Rietveld analysis of the room-temperature X-ray diffraction patterns reveals a clear change in the lattice parameter c, which correlates with the atomic radii of Cr, Fe, and Co. The temperature variation of resistivity measured between 2 K and 300 K reveals a metallic electron transport in all three YMB 4 compounds. However, no abrupt change in resistivity due to structural or magnetic phase transitions is observed. Additionally, a weak positive magnetoresistance of 1%–2% has been measured at 2.5 K, the contribution from the metallic impurity cannot be ruled out. The carrier concentration, on the order of 10 21 cm −3 , has been determined using conventional Hall measurements. The thermomagnetic curves recorded between 2 K and 350 K reveal the non-magnetic behavior of all these compounds. However, a small magnetic moment from paramagnetic/ferromagnetic impurity phases is detected at low temperatures. Above room temperature, no magnetic transition associated with the breaking of a dimer is observed.

borides↗
DOE OSTI2024

High power density compact drive integrated motor for electric transportation

This project, initially part of OPEN 2018, and subsequently the ASCEND effort, targeted demonstration of significant enhancements in internal permanent magnet (IPM) motor torque and power density for current and future ground and air electric transportation applications. These were achieved through: (1) embedded two-phase system thermal management, (2) coupled, multi-scale electrical-electromagnetic-thermal-mechanical co-design and optimization, (3) size and weight reduction of motor and drive electronics through elimination of redundant cooling and coupling hardware, and (4) higher efficiency operation of SiC wide bandgap power electronics packaging through high temperature operation (200 oC). The proposed approach utilizes a single dielectric coolant for closed loop two-phase thermal management, and a combined heat rejection unit for the IPM and drive. Wick assisted liquid delivery for evaporative thermal management is utilized for the motor, and the drive electronics utilize the same coolant in flow boiling within the cold plate structures. Through the use of three-dimensional packaging for SiC, and novel drive topologies with reduced switching losses, significant increases in power density and compactness were targeted.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2026

Investigating the electrical transport properties and electronic structure of Zr 2 ⁢CuSb 3

The checkerboard lattice has been proposed to host topological flat bands as a result of destructive interference among its various electronic hopping terms. However, it has proven challenging to realize experimentally due to the difficulty of isolating this structure from any significant out-of-plane bonding while maintaining structural integrity. Here, in this study, single crystals of Zr 2 CuSb 3 , a potential candidate for the checkerboard lattice, were synthesized using the solution (self-flux) method, and their structure was confirmed via x-ray diffraction. Electrical-transport measurements indicate metallic behavior with electron-dominated carriers. Angle-resolved photoemission spectroscopy reveals multiple electron pockets and significant k z broadening due to its large c axis and low dispersion features in k z . Density-functional theory (DFT) calculations further disentangle the contributions from each high-symmetry plane, providing a comprehensive characterization of electronic behavior. The DFT calculations were then used to determine the orbital contributions of the bands and detect the out-of-plane bonding which prevented the flat bands from forming.

Downey, Eoghan [Univ. of Michigan, Ann Arbor, MI (↗
DOE OSTI2025

A predictive analytical model of electrical transport in multi-principal-element alloys

A predictive analytical model is presented for the electrical conductivity of multi-principal-element alloys (MPEAs), including those containing aluminum, transition metals, and refractory metals. Given that the lattice parameter of the Wigner-Seitz cell of an MPEA is similarly variable to a bulk metallic glass, it is postulated that electron scattering can be approximated by a series of two-level systems. Here, the resulting reduced-order model enabled an accurate determination of electrical resistivity and electron thermal conductivity based on the scattering of electrons in a two-level system across a Bloch-potential-based virtual crystal approximation. Model results are compared to experimental four-point probe electrical resistivity measurements between 300 K and 700 K for Al 0.3 CoCrCuFeNi, CoCrFeMnNi, (CoCrFeMnNi) 0.98 W 0.02 , (CoCrFeMnNi) 0.95 W 0.05 , and Nb 4 Ta 4 V 3 Ti, for model validation.

Analytical model↗
DOE OSTI2025

Anomalous Electrical Transport in the Kagome Magnet YbFe 6 ⁢Ge 6

Two-dimensional (2D) kagome metals offer a unique platform for exploring electron correlation phenomena derived from quantum many-body effects. Here, in this study, we report a combined study of electrical magnetotransport and neutron scattering on YbFe 6 ⁢Ge 6 , where the Fe moments in the 2D kagome layers exhibit an 𝐴-type collinear antiferromagnetic order below 𝑇 N ≈ 500 K. Interactions between the Fe ions in the layers and the localized Yb magnetic ions in between reorient the 𝑐-axis-aligned Fe moments to the kagome plane below 𝑇 SR ≈ 63 K. Our magnetotransport measurements show an intriguing anomalous Hall effect (AHE) that emerges in the spin-reorientated collinear state, accompanied by the closing of the spin anisotropy gap as revealed from inelastic neutron scattering. The gapless spin excitations and the Yb-Fe interaction are able to support a dynamic scalar spin chirality, which explains the observed AHE. Therefore, our Letter demonstrates that spin fluctuations may provide an additional scattering channel for the conduction electrons and give rise to AHE even in a collinear antiferromagnet.

Yao, Weiliang [Rice Univ., Houston, TX (United Sta↗
DOE OSTI2025

Engineering Electrical Transport by Implantation‐Induced Defects in CrN Films Without Affecting Thermal Conductivity

The transport properties of CrN thin films deposited on sapphire have been tailored through structural modifications induced by cumulative argon implantation. As-grown samples experience the typical structural transition in CrN films from orthorhombic at low temperature to cubic above the Néel temperature (≈280 K) and exhibit a metallic-like conduction in both phases. With increasing implantation dose, the conduction mode shifts to a semiconductor-like behavior in both phases, albeit at different damage levels. Analysis of the results suggests that hopping conduction becomes dominant beyond a given damage threshold. The results highlight a promising correlation between defect engineering and conduction mechanisms, offering valuable insights into the versatile electrical properties of CrN films. These implantation-induced defects scatter carriers, leading to a decrease in their mobility. As the implantation dose increases, the defect landscape evolves, modifying the density of states. However, up to a dose of 0.050 dpa, no significant influence on phonon scattering is observed. This approach demonstrates that ion implantation enables precise tuning of CrN's electrical properties without affecting thermal conductivity, offering valuable insights into defect engineering in transition metal nitrides and underscoring its potential for transport properties decorrelation.

defects↗
DOE OSTI2026

Analyzing SCM Grid Benefits from Electric Transportation [Slides]

Increasing adoption of EVs and expanding unmanaged charging loads could increase the cost of transportation energy due to increasing load variability and shrinking infrastructure capacity. The actual cost of transportation energy, such as charging an EV, depends on several factors including energy costs, charging infrastructure costs, and applicable grid upgrades. Based on studies from past DOE projects; RECHARGE, DirectXFC, FUSE and 21st Century Truck Partnership (21CTP) the EV-CENTS project will develop a transportation energy cost metric to better quantify these factors and provide a framework for assessing the value potential of new technology solutions, such as smart charge management (SCM), which could reduce these costs for all stakeholders. The initial assessment will focus on the cost of charging, which will vary across vehicle classes such as light-duty vehicles (LDV) or medium and heavy-duty vehicles (MHDV), as well as across different vocations resulting in many different use cases for this metric. Cost of charging results will be developed for each use case in both uncontrolled and controlled scenarios to understand the value potential of different SCM objective functions and their ability to optimize the cost of energy and delay or eliminate the need for electrical upgrades.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

X-ray-diffraction and electrical-transport imaging of superconducting superhydride (La,Y)H 10

Understanding how microscopic structural domains govern macroscopic electronic properties is central to advancing hydride superconductors, yet such correlations remain poorly resolved under pressure. We report the synthesis and characterization of (La 0.9 Y 0.1 )H 10 superhydrides exhibiting coexisting cubic $Fm\bar{3}m$ and $P6_3/mmc$ hexagonal clathrate phases observed over the pressure range from 168 GPa down to 136 GPa. Using synchrotron-based X-ray diffraction imaging at the upgraded Advanced Photon Source, we spatially resolved μm-scale distributions of these phases, revealing structural inhomogeneity across the sample. Four-probe resistance measurements confirmed superconductivity with two distinct transitions: an onset at 244 K associated with the cubic phase and a second near 220 K linked to the hexagonal phase. Notably, resistance profiles collected from multiple current and voltage permutations showed variations in transition width and onset temperature that correlated with the spatial phase distribution. These findings demonstrate a direct connection between local structural domains and superconducting behavior.

Materials science↗
DOE OSTI2026

Structural, magnetic and electrical transport properties of YMnAl

The intermetallic compound YMnAl, crystallizing in the cubic C-15 (MgCu 2 -type) structure, was prepared using arc-melting and annealing. Rietveld refinement of the XRD pattern yields a lattice parameter of a = 7.816(1) Å⁠. The system exhibits antiferromagnetic order with a transition temperature of approximately 38 K, along with indications of a spin-glass–like phase. The effective magnetic moment, estimated from Curie–Weiss fitting of the susceptibility versus temperature curve, is 6.06 μ B /f.u. and the Curie–Weiss temperature of −79 K confirming the antiferromagnetic nature. Isothermal magnetization measurements below and above the Néel temperature show no saturation, with a maximum magnetization of 0.09 μ B /f.u observed at an applied field of 9 T. The temperature dependence of resistivity exhibits a negative temperature coefficient, characteristic of dirty metals. Hall effect measurements indicate the absence of an anomalous Hall contribution. The Hall coefficient RH, carrier concentration n, and mobility μ estimated from R XY (H) are -1.05×10 -8 m 3 /C, 5.92×10 26 m -3 and 1.05×10 -3 m 2 /V.s, respectively. Our first-principles calculations indicate that YMnAl in the orthorhombic (Imma) structure has the lowest energy; however, the substitutional disorder occurring during experimental synthesis may favor the formation of the cubic Laves phase.

Crystallography↗
DOE OSTI2025

Electrical transport and torque magnetometry studies of the kagome compound LuV 6 ⁢Sn 6 under high magnetic fields

We present a comprehensive investigation of the kagome metal LuV 6 ⁢Sn 6 through magnetotransport and torque magnetometry studies in magnetic fields up to 41 T and temperatures as low as 0.3 K. Magnetoresistance measurements up to 31 T reveal clear Shubnikov–de Haas (SdH) oscillations with two dominant frequency peaks: 𝐹 𝛼 =12 T and 𝐹 𝛽 =155 T. The Berry phase Φ 𝐁 , calculated from Landau level fan diagrams, indicates a nontrivial topology for both the 𝛼- and 𝛽-orbits. To explore the possibility of higher-frequency signals in LuV 6 ⁢Sn 6 , we employed another technique: torque magnetometry. Torque measured with applied fields up to 41 T reveals clear de Haas–van Alphen (dHvA) oscillations, with frequency signals as high as 10 kT. Angular and temperature-dependent quantum oscillation measurements allowed us to extract the effective mass of charge carriers and map the Fermi surface of LuV 6 ⁢Sn 6 . To complement the experimental findings, we performed electronic band structure and Fermi surface calculations. The electronic bands of LuV 6 ⁢Sn 6 reveal intriguing features, including flat bands, van Hove singularities, and Dirac points near the Fermi level. Two bands cross the Fermi level, contributing a deformed cylindrical shape at the Γ-point and small chainlike Fermi surfaces near the Brillouin zone boundaries. Theoretical quantum oscillation frequencies derived from Fermi surface cross-sectional areas align well with experimental SdH and dHvA results. These combined experimental and theoretical insights provide a deeper understanding of the electronic structure of LuV 6 ⁢Sn 6 and establish the foundation for exploring electronic properties in other vanadium- and titanium-based kagome systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Synthesis and electrical transport properties of superconducting platinum silicide thin films and devices

Here, we evaluate the material characteristics of superconducting platinum silicide (PtSi) thin films as candidate materials for superconducting quantum information devices compatible with silicon technology. These films were synthesized using magnetron sputtering under ultrahigh vacuum conditions, followed by rapid thermal annealing. Polycrystalline PtSi films synthesized by this method have the favorable properties of superconducting critical temperature of 0.95 K and relatively long zero-temperature Ginzburg-Landau coherence length of 76 nm. We further studied coplanar microbridge devices fabricated by electron beam lithography and chlorine-free reactive ion etching, finding that the temperature-dependent critical current density follows the Ginzburg Landau depairing mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Navigating Options for Transportation Electrification and Solar Charging: Steps and Lessons Learned in Montana Communities

This document is intended to assist communities who are considering investing in electric transportation. It can assist communities engage stakeholders, prioritize community goals, assess electric transportation options, and navigate complex decisions about deploying zero emission electric transportation in their community. It covers technological, economic and environmental aspects of the transition to electric vehicles (EV), and highlights the specific considerations related to the deployment of renewable energy technologies (e.g., distributed solar) in combination with EV supply equipment (EVSE, e.g., charging stations). There are many important decisions to make and questions for communities to ask themselves as they consider electric vehicle types, charging infrastructure, and electricity generation options. This guide will help communities assess: (1) Which stage in the decision-making process they are in with respect to EV deployment; (2) Questions they can explore to guide their decisions about EV deployment; (3) How to engage key stakeholders on EV deployment options; (4) Tradeoffs and benefits of various electric transportation options and; (5) Synergies of pairing electric vehicle charging and renewable energy generation technologies. The analysis and lessons learned presented in this roadmap are intended to serve as a template and guide for similarly situated communities across the country who want to prepare for and play a role in the electrified transportation future.

14 SOLAR ENERGY↗
DOE OSTI2025

Structure and Superconductivity of Hydrogenated TiZr Alloys Under High Pressure

The effects of pressure on the structure and electrical transport properties, including electrical resistance and critical magnetic field values for superconductivity in pristine and hydrogenated TiZr alloys, were investigated. As pressure increased from ambient to 55 GPa, the structure of the pristine TiZr alloys transformed from hcp to bcc via an intermediate ω phase. The superconducting transition temperature (T c ) significantly increased from 1.76 K at ambient pressure to 15.5 K at 52.2 GPa, accompanied by an extrapolated upper critical field of 24.5 T at T = 0 K. In contrast, the hydrogenated samples exhibited substantially lower T c values compared to the pristine ones, with a T c of 4.6 K at 50.5 GPa and an extrapolated upper critical field of 1.8 T at T = 0 K. Upon decompression, the superconductivity in the hydrogenated sample persisted down to 25 GPa, disappearing when the pressure was reduced to 19 GPa. Synchrotron X-ray diffractions (XRD) analysis revealed the formation of three hydrides: I4/mmm-(Ti, Zr)H 2 , P6 3 /mmc-(Ti, Zr)H 3 , and I4̅3d-(Ti,Zr) 4 H 15 . Finally, by combining XRD and electrical resistance data, we tentatively propose that the P6 3 /mmc-(Ti, Zr)H 3 predominantly induces superconductivity. In contrast to superhydrides, where electron–phonon interactions increase the superconducting temperature at high pressure, hydrogen atoms in hcp-(Ti, Zr)H 3 reduce T c .

36 MATERIALS SCIENCE↗
DOE OSTI2026

Bandgap Engineering of Ga 2 O 3 by MOCVD Through Alloying with Indium

Ga 2 O 3 and In 2 O 3 are vital semiconductors with current and future electronic device applications. Here, we study the alloying of In 2 O 3 and Ga 2 O 3 (IGO) and the associated changes in structure, morphology, band gap, and electrical transport properties. Undoped films of IGO were deposited on sapphire substrates with varying indium (In) percentage from zero to 100% by metal-organic chemical vapor deposition (MOCVD). Some films were annealed in H 2 to induce electrical conductivity. The measurements showed the optical band gap decreased by adding In; this was confirmed by density functional (DFT) calculations, which revealed that the nature of the valence band maximum and conduction band minimum strongly relate to the chemistry and that the band gap drops by adding In. The as-grown films were highly resistive except for pure In 2 O 3 , which possesses p-type conductivity, likely arising from In vacancy-related acceptor states. N-type conductivity was induced in all films after H-anneal. DFT calculations revealed that the presence of In decreases the electron effective mass, which is consistent with the electrical transport measurements that showed higher electron mobility for higher In percentage. The work revealed the successful band gap engineering of IGO and the modification of its band structure while maintaining high-quality films by MOCVD.

36 MATERIALS SCIENCE↗