Basic radiation effects in electronics. Radiation effects in materials, electrical response in electronic components, and radiation effects units [Slides]
Basic questions for radiation effects in electronics are addressed.
36 MATERIALS SCIENCE↗
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The Criticalness of Radiation Effects in Electronics [Slides]
Radiation effects for system continue to be a challenge, but extensive testing and modeling allows system designers to build robust systems that can survive harsh radiation environments.
63 RADIATION, THERMAL, AND OTHER ENVIRON. POLLUTAN↗
High-resolution planar electron beam induced current in bulk diodes using high-energy electrons
Understanding the impact of high-energy electron radiation on device characteristics remains critical for the expanding use of semiconductor electronics in space-borne applications and other radiation harsh environments. Here in this paper, we report on in situ measurements of high-energy electron radiation effects on the hole diffusion length in low threading dislocation density homoepitaxial bulk n-GaN Schottky diodes using electron beam induced current (EBIC) in high-voltage scanning electron microscopy mode. Despite the large interaction volume in this system, quantitative EBIC imaging is possible due to the sustained collimation of the incident electron beam. This approach enables direct measurement of electron radiation effects without having to thin the specimen. Using a combination of experimental EBIC measurements and Monte Carlo simulations of electron trajectories, we determine a hole diffusion length of 264 ± 11 nm for n-GaN. Irradiation with 200 kV electron beam with an accumulated dose of 24 × 10 16 electrons cm -2 led to an approximate 35% decrease in the minority carrier diffusion length.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3
The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.
42 ENGINEERING↗
Radiation Effects on Electronics: How to Destroy a Satellite in Three Easy Steps…and How Material Scientists Can Help [Slides]
Abstract not provided.
36 MATERIALS SCIENCE↗
Radiation Effects in Electronics: From Basic Physics to Experimental and Simulation Capabilities.
Abstract not provided.
McLain, Michael↗
Electronic effects in radiation-induced collision cascades in nickel
The accurate treatment of electronic effects in multi-million-atom simulations of radiation-induced collision cascades is crucial for reliable predictions of primary radiation damage. In this work, we explore the fidelity of a recently developed two-temperature molecular dynamics model implementing an electron density-dependent coupling of electronic and atomic subsystems for cascade simulations in nickel. We show that the parameter-free model realistically captures the instantaneous energy losses during all stages of the highly nonequilibrium cascade process. Our simulations predict two distinct coupling regimes, corresponding to the rapid energy losses through electronic stopping in the early stages of the cascade and to the slow equilibration through the electron-phonon coupling mechanism in the later stages, without the use of separate models or coupling terms. The intermediate stage of the cascade dynamics displays a complex energy transfer between the subsystems, which cannot be interpreted by comparison to either electronic stopping or electron-phonon coupling theories. We therefore compare the predicted atomic mixing, which is sensitive to the energy losses during the intermediate cascade stage, with experimental ion beam mixing measurements. We find good agreement with the experiments, validating the coupling model for the intermediate stage of the cascade. Predictions of final defect numbers and cluster sizes are found in line with the results from conventional electronic stopping-based methods, while significantly reducing the theoretical uncertainty in the outcomes of conventional models stemming from arbitrary choices of thresholds for different coupling terms. Our results represent a notable improvement in cascade damage predictions in nickel, providing validation of the electron density-dependent coupling model for radiation damage simulations in general. The results lead us to propose an interpretation of the electronic energy losses in the intermediate regime of velocities, where we find an effectively nonlinear dissipation.
Crystal defects↗
Refined interpretation of electron temperature response to neutral beam injection at DIII-D
Accurate particle and power deposition profiles of neutral beam injection (NBI) are essential to transport studies, and that information is usually acquired through Monte Carlo simulations with a given collisional model. The deposition process of the energetic beam particles leads to the informative electron temperature (T e ) evolution trajectory, which can be captured by electron cyclotron emission (ECE) system due to its good spatial and temporal resolution. Previously, some work has been done to interpret the T e responses to the pulsed NBI as a linear heating source with Fourier-based techniques, although that approach fell short when the fast ion slowing-down time becomes significant (~100 ms). It has been observed in DIII-D that the modulated NBI pulses (10–50 Hz) reduce local core T e values ~0.1 keV through cold electron dilution in high-T e (>2 keV) plasmas alongside accumulative heating. Here, a novel approach to interpret the T e response to NBI was developed by linearizing and modeling the detailed T e evolution trajectory using coherently averaged ECE data based on the different time scales of the terms in the local power and particle balance equations. The technique does not require absolute calibrations of ECE and is independent of collisional models. The resulting beam deposition profiles show good consistency and reasonable agreement with Monte Carlo calculations based on the atomic data from the Atomic Data and Analysis Structure (ADAS). Local electron density response measured by Thomson scattering (TS) also suggests the same features when the beam pulse is large enough for that diagnostic to resolve. The remaining discrepancies are also discussed.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
PIXEL2020: Tenth International Workshop on Semiconductor Pixel Detectors for Particles and Imaging
This workshop covers various topics related to pixel detector technology. Development and applications will be discussed for charged particle tracking in High Energy Physics, Nuclear Physics, Astrophysics, and X-ray imaging in Astronomy, Biology, Medicine and Material Science. The conference program will also include reports on front and back end electronics, radiation effects, low mass mechanics and construction techniques, and new technologies such as monolithic and 3D integrated detectors.
Sally, Seidel↗
Radiation Effect in Micro-electronics: Issues for lunar surface [Slides]
Abstract not provided.
47 OTHER INSTRUMENTATION↗
Electron beam-induced nanopores in Bernal-stacked hexagonal boron nitride
Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. Here, we investigate experimentally and theoretically triangular vacancies in (unconventional) Bernal-stacked AB-h-BN formed using a high-energy electron beam. Due to the geometric configuration of AB-h-BN, triangular pores in different layers are aligned, and their sizes are controlled by the duration of the electron irradiation. Interlayer covalent bonding at the vacancy edge is not favored, as opposed to what occurs in the more common AA'-stacked BN. A variety of monolayer, concentric and bilayer pores in bilayer AB-h-BN are observed in high-resolution transmission electron microscopy and characterized using ab initio simulations. Bilayer pores in AB-h-BN are commonly formed, and grow without breaking the bilayer character. Nanopores in AB-h-BN exhibit a wide range of electronic properties, ranging from half-metallic to non-magnetic and magnetic semiconducting. Therefore, because of the controllability of the pore size, the electronic structure is also highly controllable in these systems, and can potentially be tuned for particular applications.
2D materials↗
Radiation Hardening – Test Capabilities (LANSCE) [Slides]
The Los Alamos Neutron Science Center (LANSCE) has exceptional facilities for research and testing of radiation effects in electronics. We have the best terrestrial neutron source for sea-level and airplane-altitude environments. We have a thermal neutron test capability at the Lujan Center and a proton beam test capability at the “Blue Room”. LANL has the programmatic mission to develop this radiation-effects program, namely space and satellite environments, high-performance computing (silent data corruption), and weapons delivery systems. We have a strong connection to industry which continues to grow.
42 ENGINEERING↗
Two-dimensional spin systems in PECVD-grown diamond with tunable density and long coherence for enhanced quantum sensing and simulation
Systems of spins engineered with tunable density and reduced dimensionality enable a number of advancements in quantum sensing and simulation. Defects in diamond, such as nitrogen-vacancy (NV) centers and substitutional nitrogen (P1 centers), are particularly promising solid-state platforms to explore. However, the ability to controllably create coherent, two-dimensional spin systems and characterize their properties, such as density, depth confinement, and coherence, is an outstanding materials challenge. We present a refined approach to engineer dense (≳1 ppm ∙ nm), 2D nitrogen, and NV layers in diamond using delta-doping during plasma-enhanced chemical vapor deposition epitaxial growth. We employ both traditional materials techniques, e.g., secondary ion mass spectrometry, alongside NV spin decoherence-based measurements to characterize the density and dimensionality of the P1 and NV layers. We find P1 densities of 5–10 ppm ∙ nm, NV densities between 1 and 3.5 ppm ∙ nm tuned via electron irradiation dosage, and depth confinement of the spin layer down to 1.6 nm. We also observe high (up to 0.74) ratios of NV to P1 centers and reproducibly long NV coherence times, dominated by dipolar interactions with the engineered P1 and NV spin baths.
36 MATERIALS SCIENCE↗
Direct comparison of gamma, electron beam and X-ray radiation effects on the polymers of a pulsed lavage device
Gamma radiation used for sterilization of medical devices is challenged by cobalt-60 supply and commercial capacity. To maintain a robust radiation sterilization marketplace for the rapidly growing single-use medical device industry, investigation of potential alternatives to gamma technology, such as electron beam (e-beam) and X-ray technology, is critical. In this work, we directly compare the effects of radiation source and absorbed dose level on the polymeric materials and function of a commercial pulsed lavage device used for wound care. Product functionality, polymer mechanical, and polymer optical properties were evaluated using standard methods and input from the device manufacturer. Test results show that functionality of the product was not inhibited by radiation although the battery in the device exposed to X-ray exhibited greater voltage loss compared to batteries in products exposed to gamma or e-beam. Statistically significant differences between gamma and e-beam exposure and between gamma and X-ray exposure were also observed for product appearance in terms of yellowness index of several of the polymers considered. Overall, the results of this study support the viability of e-beam and X-ray radiation technologies as alternatives to cobalt-60 gamma technology for sterilization of the single-use pulsed lavage medical device investigated.
Electron beam↗
Electron irradiation effects on the optical properties of Hf- and Zn-doped β -Ga 2 O 3
Optical and electrical properties of Hf- and Zn-doped β-Ga 2 O 3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga 2 O 3 :Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr 3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga 2 O 3 :Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga 2 O 3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies.
36 MATERIALS SCIENCE↗
Computationally guided experimental validation of divacancy defect formation in 4H-SiC
Recent research into solid-state qubits for quantum information science has focused on optically addressable spin defects such as the negatively charged nitrogen-vacancy center in diamond and the neutrally charged divacancy (VV) in 4H-SiC as scalable quantum sensors and networking qubits. Within this context, direct investigations of the structural origin and defect formation dynamics of a sub-set of the VV center in 4H-SiC remain lacking. Here, we take a systematic experimental approach guided by predictions from first-principles simulations to gain a thorough mechanistic understanding of the VV defect formation and control in 4H-SiC. We study the effect of annealing time and temperature on VV formation in high-purity semi-insulating 4H-SiC samples following electron irradiation. Three different temperatures (1123, 1273, and 1473 K) and annealing duration (from 0.5 to 72 h) are chosen to explore VV formation in different regions. We find that samples annealed at 1273 K give the highest VV-related photoluminescence (PL) intensities, in agreement with the prediction from first-principles calculations. Furthermore, the logarithmic dependence of VV-related PL intensities on the annealing duration at 1273 K indicates that 1273 K provides sufficient thermal energy for silicon vacancy migration but not for VV migration. Together, these results suggest that efficient VV formation occurs above the V Si migration temperature and below the VV migration threshold.
74 ATOMIC AND MOLECULAR PHYSICS↗
Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing
Carrier-transport mechanisms are studied in high-purity diamond irradiated with 6 MeV electrons in the dose range of 10 12 –10 16 cm -2 and annealed at different temperatures up to 1450°C. Lifetimes and diffusion coefficients are extracted using two pump–probe techniques based on free-carrier absorption and transient-grating principles and then correlated with the corresponding defect evolution from spectroscopic measurements. Furthermore, the neutral monovacancy is revealed as the main carrier recombination center in the as-irradiated diamond, providing bipolar carrier lifetimes of a few nanoseconds at the highest irradiation dose. Carrier-capture cross sections are reduced during annealing as vacancies aggregate into divacancies at ≤1000°C and extended vacancy clusters at 1450°C.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Modeling the Effects of Drift Orbit Bifurcation on Radiation Belt Electrons
Abstract Drift orbit bifurcation (DOB) has been suggested to play a major role in the loss and transport of radiation belt electrons since it violates the second adiabatic invariants of particles and makes the third invariant undefined. Results from our guiding‐center test particle simulations using the Tsyganenko‐1989c magnetic field model show that the DOB could affect a broad region of the outer radiation belt, which can penetrate inside the geosynchronous orbit at Kp ≥ 3, and its effects are more significant further away from the Earth, at a higher Kp and for higher electron energies. Specifically, the short‐term simulation results after one electron drift show both traditional and nontraditional DOB transport of electrons, with the nontraditional DOB, caused by a third minimum of the magnetic field strength near the equator, reported here for the first time. Moreover, our results show large ballistic jumps in the second invariant and radial distance for electrons at high equatorial pitch angles after one drift. In addition, long‐term DOB transport coefficients of electrons over many drifts are calculated based on our simulation results. We find that the pitch angle and radial diffusion coefficients of electrons due to DOB could be comparable to or even larger than those caused by electron interactions with chorus and Ultra‐Low‐Frequency waves, respectively. In sum, our results demonstrate that DOB could cause effective loss and transport of radiation belt electrons even in the absence of waves.
Astronomy & Astrophysics↗