Evaluating complexity and resilience trade-offs in emerging memory inference machines.
Abstract not provided.
Bennett, Christopher H↗
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Evaluating complexity and resilience trade-offs in emerging memory inference machines.
Abstract not provided.
Bennett, Christopher↗
Design Space Exploration of Emerging Memory Technologies for Machine Learning Applications
Memory design space exploration methods study memory systems’ performances and limitations before implementation. The computer memory design space has grown exponentially because of the enormous growth of memory types, memory controllers, and application software. Computer simulators are commonly used for memory design space exploration. However, complex memory simulations take an enormous amount of time. Hence, in this paper, we proposed a machine learning-based design space exploration method for dynamic random-access memory and non-volatile memory systems. We applied our method to the CosmoGAN and LeNet applications to predict the following six memory response parameters: (i) bandwidth, (ii) power, (iii) average latency, (iv) average total latency, (v) memory reads, and (vi) memory writes. Our experimental results show that machine learning models can predict memory response parameter values faster than simulations. We used support vector machine, random forest, and gradient boosting machine learning models. We observed that the support vector machine provides better performance for bandwidth, average latency, and average total latency. The random forest model works better for memory reads and writes. The gradient boosting model provides superior prediction performance for power. We provide a detailed discussion on learning curve characteristics, error analysis, and memory type recommendation.
Hasan, S M Shamimul↗
Logic in Memory Emulator
Logic in Memory Emulator (LiME) is a hardware/software tool specially designed for memory system evaluation and experiment. Emerging memories display a wide range of bandwidths, latencies, and capacities, making it challenging for the computer architect to navigate the design space of potential memory configurations, and for the application developer to assess performance implications of using such memories. With the LiME framework, architectural ideas can be prototyped in great detail yet with sufficient performance to support realistic evaluation on long running applications. LiME consists of two fundamental components: 1) the hardware and OS infrastructure for the emulator, and 2) a suite of benchmark applications to assist in characterizing the performance of current and future computer architectures. Some of the applications have been collected from other open source projects. Uses: Logging, replay and analysis of an application's memory behavior Evaluate impact of emerging memory technology on application performance. Emulate complex memory interactions in whole applications orders of magnitude faster than software simulation. Emulate acceleration hardware co-located with the memory subsystem. Features: Capture and log external memory accesses to a separate off-chip memory device without affecting application execution. Memory traces include the address, length, timestamp, and optionally the data for each transaction. Captured trace data can be saved to an SD card for off-line analysis. Configure a wide range of memory latencies in sub-nanosecond increments that encompass highbandwidth and storage class memories. Specify regions of interest (ROI) in applications to reduce the amount of trace data captured for analysis. Currently supports execution on Xilinx Zynq SoC which integrates an ARM processor with FPGA logic on a single device. Applications can be run under Linux or in bare metal mode on the ARM cores.
Jain, AbhishekK↗
Non-Volatile Memory Technology Symposium 2000: Proceedings
This publication contains the proceedings for the Non-Volatile Memory Technology Symposium 2000 that was held on November 15-16, 2000 in Arlington, Virginia. The proceedings contains a wide range of papers that cover the presentations of myriad advances in the nonvolatile memory technology during the recent past including memory cell design, simulations, radiation environment, and emerging memory technologies. The papers presented in the proceedings address the design challenges and applications and deals with newer, emerging memory technologies as well as related issues of radiation environment and die packaging.
Aranki, Nazeeh↗
Radiation Effects in Advanced and Emerging Nonvolatile Memories.
Abstract not provided.
Marinella, Matthew J↗
A Test Platform to Characterize Emerging Nonvolatile Memories for Computing
Explore the source record for details and available documents.
Agarwal, Sapan↗
Radiation Effects in Advanced and Emerging Nonvolatile Memories.
Abstract not provided.
Marinella, Matthew J↗
The ECP SICM project: Managing complex memory hierarchies for exascale applications
The Exascale Computing Project (ECP)’s Simplified Interface to Complex Memories (SICM) effort focuses on developing universal interfaces for discovering, managing, and sharing data across complex memory hierarchies. These facilitate the exploitation of emerging memory technologies and support precise control over their various trade-offs such as high-bandwidth versus low-latency, persistent versus ephemeral, high-capacity versus low-capacity, and near-CPU versus near-GPU. SICM comprises three interrelated components: a low-level interface, a high-level interface, and a persistent-heap interface. The low-level SICM interface is intended for system and run-time developers as well as expert application developers who prefer full control of the memory objects used within their application. The high-level SICM interface builds upon the low-level interface, employing application-level profiling and analysis to optimize data management for complex memory hierarchies. The persistent-heap interface provides applications with a persistent memory allocator that can allocate custom C++ data structures in both block-storage and byte-addressable persistent memories.
97 MATHEMATICS AND COMPUTING↗
ALD-Derived WO 3– x Leads to Nearly Wake-Up-Free Ferroelectric Hf 0.5 Zr 0.5 O 2 at Elevated Temperatures
Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics─either within the back-end-of-line (BEOL) of CMOS front-end processes or through advanced 3D packaging technologies. Achieving this integration demands that memory materials exhibit high thermal resilience, with the capability to operate reliably at elevated temperatures, such as 125°C, due to the substantial heat generated by front-end transistors. However, silicon-compatible HfO 2 -based ferroelectrics tend to exhibit antiferroelectric-like behavior in this temperature range, accompanied by a more pronounced wake-up effect, posing significant challenges to their thermal reliability. Here, we report that by introducing a thin tungsten oxide (WO 3–x ) layer─known as an oxygen reservoir─and carefully tuning its oxygen content, ultrathin Hf 0.5 Zr 0.5 O 2 (5 nm) films can be made robust against the ferroelectric-to-antiferroelectric transition at elevated temperatures. This approach not only minimizes polarization loss in the pristine state but also effectively suppresses the wake-up effect, reducing the required wake-up cycles from 10 5 to only 10 at 125°C, a qualifying temperature for back-end memory integrated with front-end logic, as defined by the JEDEC standard. First-principles density functional theory (DFT) calculations reveal that WO 3 enhances the stability of the ferroelectric orthorhombic phase (o-phase) at elevated temperatures by increasing the tetragonal-to-orthorhombic phase energy gap and promoting favorable phonon mode evolution, thereby supporting o-phase formation under both thermodynamic and kinetic constraints.
36 MATERIALS SCIENCE↗
Curvature Memory in Electrically Stimulated Lipid Membranes
Here, we demonstrate, using non-equilibrium molecular dynamics simulations, that lipid membrane capacitance varies with surface charge accumulation linked to membrane shape and curvature changes. Specifically, we show that lipid membranes exhibit a hysteretic response when exposed to oscillatory electric fields. The electromechanical coupling in these membranes leads to hysteretic buckling, in which the membrane can spontaneously buckle in one of two distinct directions along the electric field, even for the same ionic charge accumulation at the water–membrane interface. In this regard, these binary buckled membrane states suggest potential applications in neuromorphic computing. Their bistable nature, characterized by two distinct and stable configurations, could serve as a foundation for implementing memory storage systems and logic operations. Furthermore, we introduce a circuit model that captures these dynamic effects, offering insights into emergent memory effects in electrically stimulated lipid membranes. Finally, this work presents lipid bilayers as dynamic, adaptable elements and suggests a new platform for exploring energy storage, information processing, and memory encoding at the lipid membrane level.
59 BASIC BIOLOGICAL SCIENCES↗
Electron Doping-Induced Metal–Insulator Transition in LaNiO 3 and Memory Devices
LaNiO 3 (LNO) is the only rare-earth nickelate that does not undergo a temperature-driven insulator-metal transition. Here, we report the successful deposition of epitaxial LNO thin films on LaAlO 3 substrates by a chemical solution deposition method. We report a metal-insulator transition driven by electron doping from hydrogen using catalytic Pd electrodes. A series of in-plane devices with LNO thin films and Pd-Au as the two working terminals were designed and fabricated by photolithography. Further, we report their resistance switching behavior and synaptic multiresistance states under voltage pulses. The results demonstrate the universality of electron doping-driven phase transitions in the rare-earth nickelates and their relevance to emerging memory and computing technologies.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Heteroepitaxial control of thickness, strain, and domain architecture in few-layer ferroelectric tin monochalcogenides
Thin-film epitaxy and epitaxial strain have been widely exploited to tune domain configurations, switching behavior, and ferroic properties in conventional three-dimensional ferroelectric thin films; however, its application to controlling the properties of two-dimensional (2D) ferroelectrics has remained largely unexplored. Here, using SnX (X = Se, S) as a model system, we demonstrate heteroepitaxial control of thickness, strain state, and domain architecture in few-layer ferroelectric SnX via growth on monolayer MoS2 van der Waals (vdW) templates. Compared with conventional growth, MoS2-templated heteroepitaxy promotes epitaxial alignment, yielding ultrathin SnSe films with improved crystalline quality, full areal coverage, and enlarged lateral dimensions. Strong interfacial epitaxial coupling induces pronounced in-plane strain and stabilizes a hierarchical ferroelastic domain architecture, in which long-range 90° stripe domains are further subdivided into nanoscale rotational variants, as revealed by scanning transmission electron microscopy and synchrotron X-ray microscopy. Piezoresponse force microscopy and second-harmonic polarimetry confirm robust in-plane polarization, while ferroelectricity in SnSe is established through polarization-electric field hysteresis and nonvolatile ferroelectric resistive switching with on/off ratios approaching 1000. A nonvolatile, switchable ferroelectric diode effect further evidences direct coupling between polarization and charge transport. Notably, ferroelectric switchability exhibits a strong thickness dependence and is preserved only below ∼10 layers. This vdW heteroepitaxial strategy is further extended to ferroelectric SnS. The seamless heteroepitaxial integration of 2D ferroelectrics with CMOS-compatible, wafer-scale MoS2 templates provides a general and scalable route for strain-enabled structural and ferroelectric engineering in emerging memory and low-power optoelectronic applications.
Wang, Yueyin↗
Influence of surface adsorption on MoS 2 memtransistor switching kinetics
Sulfur-deficient polycrystalline two-dimensional (2D) molybdenum disulfide (MoS 2 ) memtransistors exhibit gate-tunable memristive switching to implement emerging memory operations and neuromorphic computing paradigms. Grain boundaries and sulfur vacancies are critical for memristive switching; however, the underlying physical mechanisms are not fully understood. Furthermore, the adsorption of water and gaseous species strongly perturbs electronic transport in monolayer MoS 2 , and little work has been done to explore the influence of surface interactions on defect-related kinetics that produces memristive switching. Here, we study the switching kinetics of back-gated MoS 2 memtransistors using current transient measurements in a controlled atmosphere chamber. Here, we observe that adsorbed water molecules lead to suppression of the electronic trap-filling processes concomitant with the resistive switching process, resulting in altered kinetics of the resistive switching. Additionally, using the transient response from “bunched” drain voltage pulse trains performed as a function of temperature, we extract the energy of the affected trap state and find that it places the trap roughly midgap [E T = E C – 0.7 (±0.4) eV]. Our results highlight the importance of controlling for surface interactions that may affect switching kinetics in 2D memtransistors, synaptic transistors, and related memory devices.
36 MATERIALS SCIENCE↗
Real-space observation of ergodicity transitions in artificial spin ice
Abstract Ever since its introduction by Ludwig Boltzmann, the ergodic hypothesis became a cornerstone analytical concept of equilibrium thermodynamics and complex dynamic processes. Examples of its relevance range from modeling decision-making processes in brain science to economic predictions. In condensed matter physics, ergodicity remains a concept largely investigated via theoretical and computational models. Here, we demonstrate the direct real-space observation of ergodicity transitions in a vertex-frustrated artificial spin ice. Using synchrotron-based photoemission electron microscopy we record thermally-driven moment fluctuations as a function of temperature, allowing us to directly observe transitions between ergodicity-breaking dynamics to system freezing, standing in contrast to simple trends observed for the temperature-dependent vertex populations, all while the entropy features arise as a function of temperature. These results highlight how a geometrically frustrated system, with thermodynamics strictly adhering to local ice-rule constraints, runs back-and-forth through periods of ergodicity-breaking dynamics. Ergodicity breaking and the emergence of memory is important for emergent computation, particularly in physical reservoir computing. Our work serves as further evidence of how fundamental laws of thermodynamics can be experimentally explored via real-space imaging.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Emergent disorder and mechanical memory in periodic metamaterials
Ordered mechanical systems typically have one or only a few stable rest configurations, and hence are not considered useful for encoding memory. Multistable and history-dependent responses usually emerge from quenched disorder, for example in amorphous solids or crumpled sheets. In contrast, due to geometric frustration, periodic magnetic systems can create their own disorder and espouse an extensive manifold of quasi-degenerate configurations. Inspired by the topological structure of frustrated artificial spin ices, we introduce an approach to design ordered, periodic mechanical metamaterials that exhibit an extensive set of spatially disordered states. While our design exploits the correspondence between frustration in magnetism and incompatibility in meta-mechanics, our mechanical systems encompass continuous degrees of freedom, and thus generalize their magnetic counterparts. We show how such systems exhibit non-Abelian and history-dependent responses, as their state can depend on the order in which external manipulations were applied. We demonstrate how this richness of the dynamics enables to recognize, from a static measurement of the final state, the sequence of operations that an extended system underwent. Thus, multistability and potential to perform computation emerge from geometric frustration in ordered mechanical lattices that create their own disorder.
36 MATERIALS SCIENCE↗
A survey on processing-in-memory techniques: Advances and challenges
Processing-in-memory (PIM) techniques have gained much attention from computer architecture researchers, and significant research effort has been invested in exploring and developing such techniques. Increasing the research activity dedicated to improving PIM techniques will hopefully help deliver PIM’s promise to solve or significantly reduce memory access bottleneck problems for memory-intensive applications. We also believe it is imperative to track the advances made in PIM research to identify open challenges and enable the research community to make informed decisions and adjust future research directions. In this survey, we analyze recent studies that explored PIM techniques, summarize the advances made, compare recent PIM architectures, and identify target application domains and suitable memory technologies. We also discuss proposals that address unresolved issues of PIM designs (e.g., address translation/mapping of operands, workload analysis to identify application segments that can be accelerated with PIM, OS/runtime support, and coherency issues that must be resolved to incorporate PIM). We believe this work can serve as a useful reference for researchers exploring PIM techniques.
97 MATHEMATICS AND COMPUTING↗