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Results for “Exchange Bias”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Interface mixing and its impact on exchange coupling in exchange biased systems

Exchange bias and interlayer exchange coupling are interface driven phenomena. Since an ideal interface is very challenging to achieve, a clear understanding of the chemical and magnetic natures of interfaces is pivotal to identify their influence on the magnetism. We have chosen Ni 80 Fe 20 /CoO(t CoO )/Co trilayers as a model system, and identified non-stoichiometric Ni-ferrite and Co-ferrite at the surface and interface, respectively. These ferrites, being ferrimagnets typically, should influence the exchange coupling. But, in our trilayers the interface ferrites were found not to be ferro-or ferri-magnetic; thus having no observable influence on the exchange coupling. Our analysis also revealed that (i) interlayer exchange coupling was present between Ni 80 Fe 20 and Co even though the interlayer thickness was significantly larger than expected for this phenomenon to happen, and (ii) the majority of the CoO layer (except some portion near the interface) did not contribute to the observed exchange bias. Here, we also identified that the interlayer exchange coupling and the exchange bias properties were not interdependent.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Epitaxial exchange-bias systems: From fundamentals to future spin-orbitronics

Exchange bias has been investigated for more than half a century and several insightful reviews, published around the year 2000, have already summarized many key experimental and theoretical aspects related to this phenomenon. Since then, due to developments in thin-film fabrication and sophisticated characterization methods, exchange bias continues to show substantial advances; in particular, recent studies on epitaxial systems, which is the focus of this review, allow many long-standing mysteries of exchange bias to be unambiguously resolved. The advantage of epitaxial samples lies in the well-defined interface structures, larger coherence lengths, and competing magnetic anisotropies, which are often negligible in polycrystalline samples. Beginning with a discussion of the microscopic spin properties at the ferromagnetic/antiferromagnetic interface, we correlate the details of spin lattices with phenomenological anisotropies, and finally connect the two by introducing realistic measurement approaches and models. We conclude by providing a brief perspective on the future of exchange bias and related studies in the context of the rapidly evolving interest in antiferromagnetic spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Facile integration of giant exchange bias in Fe 5 Ge Te 2 / oxide heterostructures by atomic layer deposition

Exchange bias arises from the interfacial exchange coupling in ferromagnet-antiferromagnet bilayers and manifests as a horizontal shift of the magnetic hysteresis loop, constituting a critical component underpinning a broad range of magnetoresistive logic and memory devices. The facile implementation of exchange bias in van der Waals (vdW) magnets would be a key step towards practical devices for emerging vdW spintronics. Here, in this paper, we report an easy approach to establishing strong exchange bias in the vdW magnet Fe 5 GeTe 2 by a single-step process—atomic layer deposition (ALD) of oxides on Fe 5 GeTe 2 . We successfully created exchange bias of 300–1500 Oe in Fe 5 GeTe 2 /Al 2 O 3 , Fe 5 GeTe 2 /ZnO, and Fe 5 GeTe 2 /V 2 O 5 heterostructures, at 130 K. Control experiments showed that increasing the oxidant pulse duration in each ALD cycle or utilizing the stronger oxidant O 3 can enhance the exchange bias strength, revealing the key role of the ALD oxidants. Our systematic work elucidates the essential role of ALD-enabled oxidization of Fe 5 GeTe 2 in the formation of exchange bias, and establishes ALD of oxides as a facile, controllable, and generally effective approach to creating giant exchange bias in vdW magnets, representing an integral advance towards practical vdW spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Configurable antiferromagnetic domains and lateral exchange bias in atomically thin CrPS 4

Interfacial exchange coupling between antiferromagnets (AFMs) and ferromagnets (FMs) crucially makes it possible to shift the FM hysteresis, known as exchange bias, and to switch AFM states. Two-dimensional magnets unlock opportunities to combine AFM and FM materials; however, the buried AFM–FM interfaces obtained by stacking remains challenging to understand. Here, in this work, we demonstrate interfacial control via intralayer exchange coupling in the layered AFM CrPS 4 , where connected even and odd layers realize pristine lateral interfaces between AFM-like and FM-like regions. We distinguish antiphase even-layer states by scanning nitrogen-vacancy centre magnetometry due to a weak surface magnetization. This surface magnetization enables control over the even-layer state, with different regions switching at distinct fields due to their own lateral couplings. We toggle three AFM domains adjacent to a FM-like region and demonstrate a tunable multilevel exchange bias. Our nanoscale visualization unveils the microscopic origins of exchange bias and advances single two-dimensional crystals for hybrid AFM–FM technologies.

magnetic devices↗
DOE OSTI2024

Microstructural Underpinnings of Giant Intrinsic Exchange Bias in Epitaxial NiCo 2 O 4 Thin Films

Understanding intrinsic exchange bias in nominally single-component ferromagnetic or ferrimagnetic materials is crucial for simplifying related device architectures. However, the mechanisms behind this phenomenon and its tunability remain elusive, which hinders the efforts to achieve unidirectional magnetization for widespread applications. Inspired by the high tunability of ferrimagnetic inverse spinel NiCo 2 O 4 , the origin of intrinsic exchange bias in NiCo 2 O 4 (111) films deposited on Al 2 O 3 (0001) substrates are investigated. The comprehensive characterizations, including electron diffraction, X-ray reflectometry and spectroscopy, and polarized neutron reflectometry, reveal that intrinsic exchange bias in NiCo 2 O 4 (111)/Al 2 O 3 (0001) arises from a reconstructed antiferromagnetic rock-salt Ni x Co 1-x O layer at the interface between the film and the substrate due to a significant structural mismatch. Remarkably, by engineering the interfacial structure under optimal growth conditions, it can achieve exchange bias larger than coercivity, leading to unidirectional magnetization. Such giant intrinsic exchange bias can be utilized for realistic device applications. This work establishes a new material platform based on NiCo 2 O 4 , an emergent spintronics material, to study tunable interfacial magnetic and spintronic properties.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Antiferromagnet thickness dependence and rotatable spins in exchange biased CoO/Fe films

The emergence of exchange bias and coercivity enhancement has been investigated in epitaxial CoO/Fe films with varied antiferromagnet (AF) thicknesses, even smaller than the critical value where the frozen CoO spins are detectable. Vector magnetometry and first-order reversal curve (FORC) measurements reveal different CoO thickness dependence of the exchange bias and coercivity enhancement, including the evolution of magnetization reversal from a high coercivity, low bias phase due to rotatable CoO moments to a high bias, low coercivity phase due to frozen CoO moments. Furthermore, the AF domain state is found to be metastable, which can be reoriented by external and exchange fields prior to the appearance of frozen spins, pointing to a generic origin of the training effect. Monte Carlo simulations show that the AF anisotropy energy barrier and the rotatable spins induced by magnetic field and exchange interaction at the interface are responsible for the observed effects.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A room temperature exchange bias effect caused by the coexisting martensitic phase structures in Ni50Mn38Sb12−xGax polycrystalline Heusler alloys

The exchange bias effect is the physical cornerstone of applications, such as spin valves, ultra-high-density data storage, and magnetic tunnel junctions. This work studied the room temperature exchange bias effect by constructing a Ni50Mn38Sb12−xGax alloy system with coexisting martensitic phase structures. The study found that the exchange bias effect shows a non-monotonic change with the variation of Ga composition at 300 K, and an obvious room temperature exchange bias effect appears in the alloys with coexisting phase structures of 4O and L10, which is due to the strong exchange coupling between ferromagnetic and antiferromagnetic. Further research on the exchange bias effect and temperature shows that the blocking temperature is 420 K, and the exchange bias can stably exist in a temperature range of ∼200 K around room temperature. This work provides a method to engineer exchange bias effects at room temperature.

Physics↗
DOE OSTI2021

Exchange bias due to coupling between coexisting antiferromagnetic and spin-glass orders

Exchange bias is a property of widespread technological utility, but its underlying mechanism remains elusive, in part because it is rooted in the interaction of coexisting order parameters in the presence of complex magnetic disorder. In this study we show that a giant exchange bias housed within a spin-glass phase arises in a disordered antiferromagnet. The magnitude and robustness of the exchange bias emerges from a convolution of two energetic landscapes, namely the highly degenerate landscape of the spin glass biased by the sublattice spin configuration of the antiferromagnet. The former provides a source of uncompensated moment, whereas the latter provides a mechanism for its pinning, which leads to the exchange bias. Tuning the relative strengths of the spin-glass and antiferromagnetic order parameters reveals a principle for tailoring the exchange bias, with potential applications to spintronic technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Particle Size-Dependent Zero-Field Exchange Bias in LaFeO {sub 3} Nanoparticles

The present communication deals with particle size-dependent zero-field cooled exchange effect in LaFeO{sub 3} (LFO). LFO nanoparticles were prepared by PVA-based sol-gel method. The sample was calcined at different temperatures (700, 750, and 800 {sup ∘}C) to tune the average particle size. The detailed crystal structural and their geometrical parameters were examined by means of Rietveld refinement using x-ray diffraction data. The different techniques such as Scherrer’s method, Williamson Hall method, FESEM, and TEM were applied to accurately determine the average particle size. Zero-field cooled exchange bias and weak ferromagnetism in antiferromagnetic nanoparticles was observed for all samples using hysteresis loop measurement. The training effect was studied to confirm that the loop shift originates due to exchange bias. Exchange bias as well as coercivity are strongly related to the particle size at low and room temperature. The results clearly demonstrate that the process of calcination tailor the overall properties of material which makes it a promising candidate for device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Domain state exchange bias in a single layer FeRh thin film formed via low energy ion implantation

Modern spintronics relies heavily on the exchange bias effect to pin the orientation of ferromagnetic layers in magnetic tunnel junctions. The current implementations of exchange bias in magnetic tunnel junctions employ pristine interfaces between antiferromagnetic and ferromagnetic layers. Here we reveal an interfacial exchange bias introduced by a single-step, low-energy ion implantation process in a single layer FeRh thin film. Both 1 keV He + ions and 5 keV Fe + were investigated, their energy selected to ensure the ions would stop within the FeRh film. The ions reduce the metamagnetic transition temperature through defect generation to form a surface layer with ferromagnetic ordering. Temperature dependent magnetism measurements reveal a room temperature exchange bias between the ferromagnetic surface and the antiferromagnetic bulk of ~41 Oe in 5 keV Fe + implanted samples and ~36 Oe for 1 keV He + implanted samples. We directly scrutinize this exchange bias effect in magnetic depth profiles obtained by polarized neutron reflectometry which clearly show a pinned ferromagnetic layer adjacent to the disordered layer created by low energy Fe + ion implantation. These results reveal a novel method to implement exchange bias in an antiferromagnetic layer that can have direct application in the field of spintronics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Exchange Bias Effect in FeCo Nanoparticles

The exchange bias fields in FeCo nanoparticles are investigated. A series of Fe{sub 1−x}Co{sub x} ( x =0.3, 0.5, and 0.7) NPs were fabricated using the hydrothermal method. XRD studies determined that the structures of the first two NPs were body-centered cubic (BCC) while that of the third was of a disordered structure having a few small disordered BCC crystallites. SEM images of the first two showed that these nanocrystals have well-structured pyramid shapes with planar surfaces on them. FC and ZFC magnetization curves showed the temperature dependences of the magnetization of the first two FeCo NPs were different from that of the third FeCo NPs. The hysteresis loops measured at 300, 150, and 10 K showed horizontal shifts of several of the loops. The exchange bias fields at 10 K of the three FeCo NPs were small but in two of them, the Fe{sub 0.7}Co{sub 0.3} and the Fe{sub 0.3}Co{sub 0.7} NPs, the fields were large at 150 K. The exchange bas field in the first NPs remained large as the temperature was raised to 300 K. H{sub E} for the last FeCo NPs became small again at 300 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque

Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.

42 ENGINEERING↗
DOE OSTI2020

Enhanced positive and negative exchange bias in FeF 2 /Ni with dusted interfaces

An enhanced exchange bias was found in FeF 2 /Ni interfaces by inserting dusting of Pd and Cu atoms. We have used an ultrathin wedge to investigate systematically the effect of a discontinuous nonmagnetic spacer between the antiferromagnetic and ferromagnetic layers. Negative and positive exchange biases are symmetric and maximized for less than two angstroms of the nonmagnetic layer. Moreover, the dusting reduces the field cooling threshold to switch between the negative and the positive exchange bias. This finding demonstrates that nonmagnetic dusted layers can improve the interfacial exchange energy density in antiferromagnetic/ferromagnetic heterostructures and modify the bulk antiferromagnetic domain structure. Other dusting materials such as Ag, Ti, V, and SiO 2 showed no enhancement in FeF 2 /Ni bilayers, which indicates the atomic sensitivity of this effect.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Intrinsic exchange bias from interfacial reconstruction in an epitaxial Ni x Co y Fe 3– x – y O 4 (111)/α-Al 2 O 3 (0001) thin film family

Intrinsic exchange bias is known as the unidirectional exchange anisotropy that emerges in a nominally single-component ferro-(ferri-)magnetic system. In this work, with magnetic and structural characterizations, we demonstrate that intrinsic exchange bias is a general phenomenon in (Ni, Co, Fe)-based spinel oxide films deposited on α-Al 2 O 3 (0001) substrates, due to the emergence of a rock-salt interfacial layer consisting of antiferromagnetic CoO from interfacial reconstruction. We show that in Ni x Co y Fe 3–x–y O 4 (111)/α-Al 2 O 3 (0001) films, intrinsic exchange bias and interfacial reconstruction have consistent dependences on Co concentration y, while the Ni and Fe concentration appears to be less important. This work establishes a family of intrinsic exchange bias materials with great tunability by stoichiometry and highlights the strategy of interface engineering in controlling material functionalities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi 2 Te 4

Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi 2 Te 4 . Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Emergence of exchange bias in van der Waals magnetic alloy CrxPt1−xTe2

Abstract Cr x Pt 1− x Te 2 is a recently developed van der Waals magnetic alloy noted for its stability under ambient conditions. Here, we report the emergence of an exchange bias effect in Cr x Pt 1− x Te 2 , without typical exchange bias sources such as an adjacent antiferromagnetic layer. We find that the exchange bias is present for x = 0.45 and absent for x = 0.35, which is correlated to the presence of a Cr modulation where the Cr concentration alternates each vdW layer (modulation period of 2 layers) for x ≥ 0.4. We perform Monte Carlo simulations utilizing exchange parameters from first-principles calculations, which recreate the exchange bias in hysteresis loops of Cr 0.45 Pt 0.55 Te 2 . From our simulations, we infer the source of exchange bias to be magnetic moments locked into free energy minima that resist magnetization reversal. This work presents a way to introduce desirable magnetic properties to van der Waals magnets.

Bailey-Crandell, Ryan↗