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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Patterson, Richard L.↗
NASA NTRS2015

North American Extreme Temperature Events and Related Large Scale Meteorological Patterns: A Review of Statistical Methods, Dynamics, Modeling, and Trends

The objective of this paper is to review statistical methods, dynamics, modeling efforts, and trends related to temperature extremes, with a focus upon extreme events of short duration that affect parts of North America. These events are associated with large scale meteorological patterns (LSMPs). The statistics, dynamics, and modeling sections of this paper are written to be autonomous and so can be read separately. Methods to define extreme events statistics and to identify and connect LSMPs to extreme temperature events are presented. Recent advances in statistical techniques connect LSMPs to extreme temperatures through appropriately defined covariates that supplement more straightforward analyses. Various LSMPs, ranging from synoptic to planetary scale structures, are associated with extreme temperature events. Current knowledge about the synoptics and the dynamical mechanisms leading to the associated LSMPs is incomplete. Systematic studies of: the physics of LSMP life cycles, comprehensive model assessment of LSMP-extreme temperature event linkages, and LSMP properties are needed. Generally, climate models capture observed properties of heat waves and cold air outbreaks with some fidelity. However they overestimate warm wave frequency and underestimate cold air outbreak frequency, and underestimate the collective influence of low-frequency modes on temperature extremes. Modeling studies have identified the impact of large-scale circulation anomalies and landatmosphere interactions on changes in extreme temperatures. However, few studies have examined changes in LSMPs to more specifically understand the role of LSMPs on past and future extreme temperature changes. Even though LSMPs are resolvable by global and regional climate models, they are not necessarily well simulated. The paper concludes with unresolved issues and research questions.

Cold Spells↗
NASA NTRS2011

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

Patterson, Richard L.↗
NASA NTRS2011

Qualification of Bonding Process of Temperature Sensors to Extreme Temperature Deep Space Missions

A process has been explored based on the state-of-the-art technology to bond the platinum resistance thermometer (PRT) on to potential aerospace material such as a flat aluminum surface and a flexible copper tube to simulate coaxial cable for the flight applications. Primarily, PRTs were inserted into a metal plated copper braid to avoid stresses on the sensor while attaching the sensor with braid to the base material for long duration deep space missions. Appropriate pretreatment has been implemented in this study to enhance the adhesion of the PRTs to the base material. NuSil product has been chosen in this research to attach PRT to the base materials. The resistance (approx.1.1 k(Omega)) of PRTs has been electrically monitored continuously during the qualification thermal cycling testing from -150 C to +120 C and -100 C to -35 C. The test hardware has been thermal cycled three times the mission life per JPL design principles for JUNO project. No PRT failures were observed during and after the PRT thermal cycling qualification test for extreme temperature environments. However, there were some failures associated with staking of the PRT pig tails as a result of thermal cycling qualification test.

Extreme temperatures↗
NASA NTRS2008

Performance of High Temperature Operational Amplifier, Type LM2904WH, under Extreme Temperatures

Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.

Patterson, Richard↗
NASA NTRS2001

High Temperature Polyimide Materials in Extreme Temperature Environments

At the end of the NASA High Speed Research (HSR) Program, NASA Langley Research Center (LaRC) began a program to screen the high-temperature Polymeric Composite Materials (PMCs) characterized by the HSR Durability Program for possible use in Reusable Launch Vehicles (RLVs) operating under extreme temperature conditions. The HSR Program focused on developing material-related technologies to enable a High Speed Civil Transport (HSCT) capable of operating temperatures ranging from 54 C (-65 F) to 177 C (350 F). A high-temperature polymeric resin, PETI-5 was used in the HSR Program to satisfy the requirements for performance and durability for a PMC. For RLVs, it was anticipated that this high temperature material would contribute to reducing the overall weight of a vehicle by eliminating or reducing the thermal protection required to protect the internal structural elements of the vehicle and increasing the structural strain limits. The tests were performed to determine temperature-dependent mechanical and physical proper-ties of IM7/PETI-5 composite over a temperature range from cryogenic temperature -253 C (-423F) to the material's maximum use temperature of 230 C (450 F). This paper presents results from the test program for the temperature-dependent mechanical and physical properties of IM7/PETI-5 composite in the temperature range from -253 C (-423 F) to 27 C (80 F).

Johnson, Theodore F.↗
NASA NTRS2009

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Patterson, Richard↗
NASA NTRS2010

Characterization of Low Noise, Precision Voltage Reference REF5025-HT Under Extreme Temperatures

The performance of Texas Instruments precision voltage reference REF5025-HT was assessed under extreme temperatures. This low noise, 2.5 V output chip is suitable for use in high temperature down-hole drilling applications, but no data existed on its performance at cryogenic temperatures. The device was characterized in terms of output voltage and supply current at different input voltage levels as a function of temperature between +210 C and -190 C. Line and load regulation characteristics were also established at six load levels and at different temperatures. Restart capability at extreme temperatures and the effects of thermal cycling, covering the test temperature range, on its operation and stability were also investigated. Under no load condition, the voltage reference chip exhibited good stability in its output over the temperature range of -50 C to +200 C. Outside that temperature range, output voltage did change as temperature was changed. For example, at the extreme temperatures of +210 C and - 190 C, the output level dropped to 2.43 V and 2.32 V, respectively as compared to the nominal value of 2.5 V. At cryogenic test temperatures of -100 C and -150 C the output voltage dropped by about 20%. The quiescent supply current of the voltage reference varied slightly with temperature but remained close to its specified value. In terms of line regulation, the device exhibited excellent stability between -50 C and +150 C over the entire input voltage range and load levels. At the other test temperatures, however, while line regulation became poor at cryogenic temperatures of -100 C and below, it suffered slight degradation at the extreme high temperature but only at the high load level of 10 mA. The voltage reference also exhibited very good load regulation with temperature down to -100 C, but its output dropped sharply at +210 C only at the heavy load of 10 mA. The semiconductor chip was able restart at the extreme temperatures of -190 C and +210 C, and the limited thermal cycling did not influence its characteristics and had no impact on its packaging as no structural or physical damage was observed.

Patterson, Richard↗
NASA NTRSDate not supplied

Seasonal Prediction of an Extreme Temperature Index over the United States

Heat extremes have the potential to cause significant societal harm; advanced warming of the frequency of these events for a given season could help with planning and mitigation measures. While an individual temperature extreme event may not be predictable on seasonal time scales, the number of such events could be. In this study, we use an index representing the number of extreme days per summer to examine the ability of NASA’s Goddard Earth Observing System (GEOS) sub-seasonal to seasonal (S2S) prediction system to predict summertime temperature extremes over the continental United States. The index is defined as the number of days per summer (June-August) where the daily mean temperature is above the calendar-day 90th percentile and is computed for 1991-2020 using the GEOS-S2S seasonal retrospective forecasts as well as the Modern Era Retrospective Analysis for Research and Applications Version 2 (MERRA-2). Temporal correlations are assessed over this period at the grid point scale, indicating significant correlation between the retrospective forecasts and MERRA-2, particularly in the western half of the United States. Spatial correlations between the retrospective forecast and MERRA-2 indices are computed over the United States for each year revealing year-to-year variability in the forecast skill. We investigate local and remote processes associated with increased prediction skill of summertime temperature extremes in a given year.

Natalie Thomas↗
NASA NTRS2008

Evaluation of COTS Electronic Parts for Extreme Temperature Use in NASA Missions

Electronic systems capable of extreme temperature operation are required for many future NASA space exploration missions where it is desirable to have smaller, lighter, and less expensive spacecraft and probes. Presently, spacecraft on-board electronics are maintained at about room temperature by use of thermal control systems. An Extreme Temperature Electronics Program at the NASA Glenn Research Center focuses on development of electronics suitable for space exploration missions. The effects of exposure to extreme temperatures and thermal cycling are being investigated for commercial-off-the-shelf components as well as for components specially developed for harsh environments. An overview of this program along with selected data is presented.

Patterson, Richard L.↗
NASA NTRS2006

Data Converters Performance at Extreme Temperatures

Space missions often require radiation and extreme-temperature hardened electronics to survive the harsh environments beyond earth's atmosphere. Traditional approaches to preserve electronics incorporate shielding, insulation and redundancy at the expense of power and weight. However, a novel way of bypassing these problems is the concept of evolutionary hardware. A reconfgurable device, consisting of several switches interconnected with analog/digital parts, is controlled by an evolutionary processor (EP). When the EP detects degradation in the circuit it sends signals to reconfgure the switches, thus forming a new circuit with the desired output. This concept has been developed since the mid-90s, but one problem remains - the EP cannot degrade substantially. For this reason, extensive testing at extreme temperatures (-180' to 120(deg)C) has been done on devices found on FPGA boards (taking the role of the EP) such as the Analog to Digital and the Digital to Analog Converter. Analysis of the results has shown that FPGA boards implementing EP with some compensation may be a practical solution to evolving circuits. This paper describes results on the tests of data converters at extreme temperatures.

evolvable hardware↗
NASA NTRS1991

Flexible diaphragm-extreme temperature usage

A diaphragm suitable for extreme temperature usage, such as encountered in critical aerospace applications, is fabricated by a unique method, and of a unique combination of materials. The materials include multilayered lay-ups of diaphragm materials sandwiched between layers of bleeder fabrics. After being formed in the desired shape on a mold, they are vacuum sealed and then cured under pressure, in a heated autoclave. A bond capable of withstanding extreme temperatures are produced.

Lerma, Guillermo↗
NASA NTRS2005

Thermal Evaluation of Fiber Bragg Gratings at Extreme Temperatures

The development of integrated fiber optic sensors for use in aerospace health monitoring systems demands that the sensors be able to perform in extreme environments. In order to use fiber optic sensors effectively in an extreme environment one must have a thorough understanding of the sensor's capabilities, limitations, and performance under extreme environmental conditions. This paper reports on our current sensor evaluation examining the performance of freestanding fiber Bragg gratings (FBG) at extreme temperatures. While the ability of FBGs to survive at extreme temperatures has been established, their performance and long term survivability is not well documented. At extreme temperatures the grating structure would be expected to dissipate, degrading the sensors performance and eventually ceasing to return a detectable signal. The fiber jacket will dissipate leaving a brittle, unprotected fiber. For FBGs to be used in aerospace systems their performance and limitations need to be thoroughly understood at extreme temperatures. As the limits of the FBGs performance are pushed the long term survivability and performance of the sensor comes into question. We will not only examine the ability of FBGs to survive extreme temperatures but also look at their performance during many thermal cycles. This paper reports on test results of the performance of thermal cycling commercially available FBGs, at temperatures up to 1000 C, seen in aerospace applications. Additionally this paper will report on the performance of commercially available FBGs held at 1000 C for hundreds of hours. Throughout the evaluation process, various parameters of the FBGs performance were monitored and recorded. Several test samples were subjected to identical test conditions to allow for statistical analysis of the data. Test procedures, calibrations, referencing techniques, performance data, and interpretations and explanations of results are presented in the paper along with directions for future research.

Juergens, Jeffrey↗
NASA NTRS2008

Silicon-On-Insulator (SOI) Devices and Mixed-Signal Circuits for Extreme Temperature Applications

Electronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.

Patterson, Richard↗