Collaborative Evaluation of GaN FET Reliability
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Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range
A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.
Patterson, Richard↗
Effects of Thermal Cycling on Control and Irradiated EPC 2nd Generation GaN FETs
The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling in order to address their reliability for use in space missions. Results of the experimental work are presented and discussed.
field effect transistor↗
Collaborative Evaluation of GaN FETs and Gate Drivers
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Wide Bandgap Power Electronics↗
Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012
Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012
Scheick, Leif↗
Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012
Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012
Scheick, Leif↗
Cryogenic Parametric Characterization of Gallium Nitride Switches
This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.
Gonzalez, Marcelo C.↗
Radiation and Thermal Cycling Effects on EPC1001 Gallium Nitride Power Transistors
Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Information pertaining to performance of electronic parts and systems under hostile environments is very scarce, especially for new devices. Such data is very critical so that proper design is implemented in order to ensure mission success and to mitigate risks associated with exposure of on-board systems to the operational environment. In this work, newly-developed enhancement-mode field effect transistors (FET) based on gallium nitride (GaN) technology were exposed to various particles of ionizing radiation and to long-term thermal cycling over a wide temperature range. Data obtained on control (un-irradiated) and irradiated samples of these power transistors are presented and the results are discussed.
Patterson, Richard L.↗
NASA Tech Briefs, December 2006
Topic include: Inferring Gear Damage from Oil-Debris and Vibration Data; Forecasting of Storm-Surge Floods Using ADCIRC and Optimized DEMs; User Interactive Software for Analysis of Human Physiological Data; Representation of Serendipitous Scientific Data; Automatic Locking of Laser Frequency to an Absorption Peak; Self-Passivating Lithium/Solid Electrolyte/Iodine Cells; Four-Quadrant Analog Multipliers Using G4-FETs; Noise Source for Calibrating a Microwave Polarimeter; Hybrid Deployable Foam Antennas and Reflectors; Coating MCPs with AlN and GaN; Domed, 40-cm-Diameter Ion Optics for an Ion Thruster; Gesture-Controlled Interfaces for Self-Service Machines; Dynamically Alterable Arrays of Polymorphic Data Types; Identifying Trends in Deep Space Network Monitor Data; Predicting Lifetime of a Thermomechanically Loaded Component; Partial Automation of Requirements Tracing; Automated Synthesis of Architecture of Avionic Systems; SSRL Emergency Response Shore Tool; Wholly Aromatic Ether-Imides as n-Type Semiconductors; Carbon-Nanotube-Carpet Heat-Transfer Pads; Pulse-Flow Microencapsulation System; Automated Low-Gravitation Facility Would Make Optical Fibers; Alignment Cube with One Diffractive Face; Graphite Composite Booms with Integral Hinges; Tool for Sampling Permafrost on a Remote Planet; and Special Semaphore Scheme for UHF Spacecraft Communications.
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