SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Amplifier circuit using two FETs combines improved input and output impedances with relatively large signal handling capability and an immunity from adverse effects of automatic gain control. Circuit has sources and drains in parallel plus a resistive divider for signal and bias to either of the gate terminals.
Unity gain buffer amplifier with a Field Effect Transistor /FET/ differential input stage responds much faster than bipolar transistors when operated at low current levels. The circuit uses a dual FET in a unity gain buffer amplifier having extremely high input impedance, low bias current requirements, and wide bandwidth.
Metal oxide silicon field effect transistors /MOS FET/ as switching elements for low level commutator
LF noise generation in junction field effect transistors due to charge fluctuations
Digitized electrometer with linear time-base output, utilizing small capacitor in astable multivibrator as time element
Procedures for cleaning, decontamination, and encapulation of electronic circuits containing metal-oxide silicon field effect transistors
Gamma, electron, and proton radiation exposures of P-channel, enhancement, metal oxide semiconductor, and field effect transistors
Thin film vacuum deposition semiconductors, electron tunneling devices, and field effect transistors
Damage to field effect transistors by proton irradiation
Properties of second-gate electrode of MOS-FET AND application as voltage-controlled integrator
Fabrication of high temperature silicon carbide integrated circuit using junction-gate type field effect transistor as active component
Small current measurements with insulated-gate field effect transistor electrometers
Fabrication, testing, and implementation of metal oxide field effect transistors in Anchored Interplanetary Monitoring Platform D and E telemetry encoder
Magnetic memory circuitry using metal oxide semiconductor field effect transistors interfaced with plated wire memory
Field effect transistor and parametric amplifier characteristics, and bolometer fabrication for advanced astronomical infrared detectors
Ion beam implantation method for fabrication of automatic transistors and integrated circuits
Feasibility of fabricating thick film, insulated gate field effect transistor using integrated screened circuit technology
Fabrication of thin film transistors compatible with passive components