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Printed circuit boards retaining as much copper as possible provide electromagnetic shielding between stages of the high frequency amplifiers and transmitters. Oscillation is prevented, spurious output signals are reduced, and multiple stages are kept isolated from each other, both thermally and electrically.
Amplifiers with single-pole frequency responses used in their "roll-off" regions. Class of crystal oscillators based on use of negative-voltage-gain amplifiers at frequencies well into "roll-off" frequency regions of their gain-versus-frequency curves. Defining characteristic helps keep costs of oscillators low; not necessary to use more expensive amplifiers that have flat frequency responses out to desired operating frequencies. Enables amplifier to produce phase shift necessary for oscillation, reducing cost further by eliminating need for some of passive components in oscillators of more conventional design.
Frequency stabilization of laser oscillator against reference laser amplifier, noting residual AM effects
Radio frequency amplifier to distribute reference frequencies within communications systems and provide automatic gain control with low phase distortion is described. Use of photocell in electronic circuit to produce desired conditions is explained. Operation of entire amplifier circuit is analyzed.
Phase distortion in high frequency transistor amplifiers
A frequency divider, distribution amplifier module having low phase noise and low phase drift with temperature and high isolation between outputs was developed for use in the hydrogen maser frequency standard, where it divides 1 MHz from the previous frequency divider down to 100 kHz and provides four transistor-transistor logic (TTL) outputs.
A network is described which is suitable for realizing a low-sensitivity high-Q second-order frequency-selective amplifier for high-frequency operation. Circuits are obtained from this network which are well suited for realizing monolithic integrated circuits and which do not require any process steps more critical than those used for conventional monolithic operational and video amplifiers. A single chip version using compatible thin-film techniques for the frequency determination elements is then feasible. Center frequency and bandwidth can be set independently by trimming two resistors. The frequency selective circuits have a low sensitivity to the process variables, and the sensitivity of the center frequency and bandwidth to changes in temperature is very low.
The various noise sources that affect InSb detectors (and similar voltaic devices) are discussed and calculated. Methods are given for measuring detector resistance, photon loading, detector and amplifier capacitance, amplifier frequency response, amplifier noise, and quantum efficiency. A photovoltaic InSb detector with increased sensitivity in the 1 to 5.6 mu region is dicussed.
A systematic step-by-step computer-aided procedure for designing high-frequency transistor amplifiers is described. The technique makes it possible to determine the optimum source impedance which gives a minimum noise figure.
This paper presents the design, fabrication and test results for a novel waveguide multimode directional coupler (MDC). The coupler, fabricated from two dissimilar frequency band waveguides, is capable of isolating power at the second harmonic frequency from the fundamental power at the output port of a traveling-wave tube (TWT) amplifier. Test results from proof-of-concept demonstrations are presented for a Ku-band/Ka-band MDC and a Ka-band/E-band MDC. In addition to power measurements at harmonic frequencies, a potential application of the MDC is in the design of a satellite borne beacon source for atmospheric propagation studies at millimeter-wave (mm-wave) frequencies (Ka-band and E-band).
A proposed microwave amplifier mechanism for future generations of millimeter high power uplinks to spacecraft and planetary radar transmitters is introduced. Basic electron-electromagnetic field interaction theory for RF power gain is explained. The starting point for general analytical methods leading to detailed design results is presented.
Charge sensitive amplifier outputs bipolar pulse with maximum peak of 5 volts. This is applied to negative inputs of two high-speed comparators. These change output states only if pulse applied to negative inputs exceeds dc bias on their positive inputs. Output is transferred to digital event counter.
A radio frequency power load and associated method. A radio frequency power load apparatus includes a container and a fluid having an ion source therein, the fluid being contained in the container. Two conductors are immersed in the fluid. A radio frequency transmission system includes a radio frequency transmitter, a radio frequency amplifier connected to the transmitter and a radio frequency power load apparatus connected to the amplifier. The apparatus includes a fluid having an ion source therein, and two conductors immersed in the fluid. A method of dissipating power generated by a radio frequency transmission system includes the steps of: immersing two conductors of a radio frequency power load apparatus in a fluid having an ion source therein; and connecting the apparatus to an amplifier of the transmission system.
A radio frequency power load and associated method. A radio frequency power load apparatus may include a container with an ionized fluid therein. The apparatus may include one conductor immersed in a fluid and another conductor electrically connected to the container. A radio frequency transmission system may include a radio frequency transmitter, a radio frequency amplifier connected to the transmitter and a radio frequency power load apparatus connected to the amplifier. The apparatus may include a fluid having an ion source therein, one conductor immersed in a fluid, and another conductor electrically connected to the container. A method of dissipating power generated by a radio frequency transmission system may include constructing a waveguide with ionized fluid in a container and connecting the waveguide to an amplifier of the transmission system.
We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds. We bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) onto a separately fabricated passive circuit having a GaAs substrate. The compact bumps and small chip size were used for efficient coupling and maximum circuit design flexibility. This new quasi-monolithic millimeter-wave integrated circuit (Q-MMIC) amplifier exhibits a peak gain of 5.8 dB at approx. 90 GHz and a 3 dB bandwidth of greater than 25%. To our knowledge, this is the highest frequency amplifier assembled using bump-bonded technology. Our bump-bonding technique is a useful alternative to the high cost of monolithic millimeter-wave integrated circuits (MMIC's). Effects of the bumps on the circuit appear to be minimal. We used the simple matching circuit for demonstrating the technology - future circuits would have all of the elements (resistors, via holes, bias lines, etc.) included 'in conventional MMIC's. Our design in different from other investigators' efforts in that the bumps are only 8 microns thick by 15 microns wide. The bump sizes were sufficiently small that the devices, originally designed for W-band hybrid circuits, could be bonded without alteration. Figure 3 shows the measured and simulated magnitude of S-parameters from 85-120 GHz, of the InP HEMT bump-bonded to the low noise amplifier (LNA) passive. The maximum gain is 5.8 dB at approx. 90 GHz, and gain extends to 117 GHz. Measurement of a single device (without matching networks) shows approx. 1 dB of gain at 90 GHz. The measured gain of the amplifier agrees well with the design in the center of the measurement band, and the agreement falls off at the band edges. Since no accommodation for the bump-bonding parasitics was made in the design, the result implies that the parasitic elements associated with the bonding itself do not dominate the performance of the LNA circuit. It should be noted that this amplifier was designed for good noise performance, which is why the input and output return losses are poorer than one would expect for an amplifier simply matched for gain. However, noise performance has not been measured at this time. While the agreement between modeled vs. experimental data is not exact, the data prove that bump-bonded technology can be used for amplifiers at frequencies at least as high as 100 GHz. JPL is pursuing this technology as a way to economically and quickly incorporate the best available HEMTs into a circuit with all of the reliability and circuit design flexibility offered by MMIC technology. We are currently using the technology to fabricate 4-stage, wide-band, W-band LNA's. We have also performed pull and shear tests which show that the bump bonds are sufficiently robust for any anticipated application.
The bandwidth of frequency domain measurement methods of electrical signals has usually been far greater than the bandwidth of time domain methods. The primary limits of the time domain approach have been the 20 to 30 GHz bandwidth limit for electronic waveform acquisition instrumentation, and the lack of usable electrical pulse generators for excitation of a test device. The bandwidth of frequency domain network analysis appears to have reached a plateau of between 100 to 200 GHz, while time domain measurement have improved markedly in both bandwidth and sensitivity with the introduction of the pulsed laser based electro-optic sampling approach. Network analysis or the measurement of device scattering parameters provides information necessary to the design of electronic network such as high frequency amplifiers, mixers, and phase shifter. The bandwidth of frequency domain network analysis is currently being exceeded by the next generations of high frequency transistors and devices. Thus the electro-optic approach is a natural means of extending network analysis into the range above 100 GHz by employing time domain methods. In this approach, a suitable electrical excitation pulse is generated and propagated along a transmission line toward a test device. In the picosecond domain, laser driven photoconductive switches provide a unique method of generating electrical transients. Several materials were studied for generating short electrical pulses using photoconductive switches. The various semiconductive materials tested for photoconductive switching, and the electro-optic measurement technique used to characterize the material performance are described.
The present critical-layer asymptotic analysis for the nonlinear interaction of frequency-detuned modes in boundary-layer transition indicates that the interaction between a plane mode at the fundamental frequency and a pair of symmetrical oblique waves at the near-subharmonic frequency amplifies another pair of symmetrical oblique waves at the 'mirror frequency'. This type of interaction is stronger in the frequency-detuned case than the resonant triad case, and leads to a sharp drop in the oblique waves' peak with small detuning.
A typical heterodyne remote sensing system contains three major elements: the antenna, the radiometer, and the spectrometer. The radiometer consists of the local oscillator, the mixer, and the intermediate frequency amplifiers. This subsystem performs the function of down converting the high frequency incident thermal emission signal to a lower intermediate frequency. The spectrometer measures the power spectrum of the down-converted signal simultaneously in many contiguous frequency channels. Typical spectrum analysis requirements involve measurement of signal bandwidths of 100 to 1000 MHz with a channel resolution of 0.5 to 10 MHz. Three general approaches are used for spectrometers: (1) filter banks, (2) Acousto-Optic Spectrometers (AOS's), and (3) digital autocorrelators. In contrast to the two frequency domain techniques, an autocorrelator works in the time domain. The autocorrelation function (ACF) of the incoming signal is computed and averaged over the integration time. The averaged ACF is then Fourier transformed to obtain the signal power spectrum. Significant progress was made in the development of sub mm antennas and radiometers. It is now time to begin research in the development of low power spaceborne spectrometers and to reduce their size and weight. The near-term research goal will be to develop a prototype digital autocorrelation spectrometer, using VLSI gate array technology, which will have a small size, low power requirements, and can be used in spacecraft mm and sub mm radiometer systems. The long-range objective of this technology development is to make extremely low power, less than 10 mW/channel, small and stable wideband spectrometers which can be used in future mm and sub mm wavelength space missions such as the Large Deployable Reflector.