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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Field-dependent magnons in the honeycomb antiferromagnet CoTiO 3

We report field-dependent high-resolution inelastic neutron scattering (INS) measurements on the honeycomb lattice magnet, CoTiO 3 , to study the evolution of its magnon excitations across a spin reorientation transition driven by an in-plane magnetic field. By carrying out elastic neutron scattering in a magnetic field, we show that the sample transitions from a collinear antiferromagnetic state with multiple magnetic domains at a low field to a monodomain state with a canted magnetic structure at a high field. Concurrent with this transition, we observed significant changes in both the energy and the width of the zone center magnon peak. The observed width change was argued to be consistent with an unusual zero-field state with extended domain walls. On the other hand, the magnon spectra near the K point of the Brillouin zone boundary were found to be largely insensitive to the changes in the ordered moment directions and the domain configuration. We argue that this observation is difficult to explain within the framework of the bond-dependent model proposed in a recent INS study [M. Elliot et al., Nat. Commun. 12, 3936 (2021)]. Our paper therefore calls for alternative explanations for the observed K-point gap in CoTiO 3 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Field-dependent carrier transport in implanted isolation region of GaN lateral power devices

Among GaN lateral power devices, with proper E-field management, the breakdown occurs in the device isolation region rather than the active region. In this paper, we investigate field-dependent carrier transport in the isolation structures. Isolation test structures with variations in buffer doping, un-intentionally doped (UID) GaN thickness, and implantation conditions were fabricated. Electrical characterization was performed over a wide range of voltage and temperature. With varying UID GaN thickness and buffer doping, the leakage current and breakdown characteristics remain the same for a specific implantation condition, indicating that the leakage conduction and breakdown are governed by the implanted GaN region. Analysis of the temperature-dependent I–V reveals that carrier transport in the implanted GaN can be well explained by hopping conduction, involving three distinctive regions of operation depending on the E-field. At low E-field, carrier transport is ohmic, consistent with variable range hopping, driven by thermal activation. At medium E-field, a field enhanced thermally activated hopping is observed, following σ ∼ σ(T)exp(E). At high E-field, activation-less hopping is visible, following σ ∼ exp(−1/E), which occurs above a critical E-field limited by localization length.

Sadek, Mansura (ORCID:0000000322588338)↗
DOE OSTI2026

Domain-wall-mediated polarization switching in ferroelectric AlScN: Strain relief and field-dependent dynamics

While scandium-doped aluminum nitride (AlScN) exhibits robust ferroelectricity and excellent thermal stability, its utility is limited by an exceptionally high coercive field (𝐸 𝑐 ) for polarization switching. Unraveling the atomistic switching dynamics is therefore critical for tailoring 𝐸 𝑐 . Here, in this study, we combine density functional theory and machine-learning molecular dynamics to elucidate the polarization switching mechanisms in AlScN over various Sc concentrations and applied electric fields. We find that excessive lattice strain strictly prohibits collective polarization switching, but the preexisting domain walls relieve strain and lead to a distinct switching dynamics—dictating a field-dependent switching mechanism. At low electric fields, switching occurs via gradual domain-wall propagation consistent with the Kolmogorov-Avrami-Ishibashi model. In contrast, high fields stimulate additional nucleation, driving a rapid, homogeneous reversal process described by the simultaneous nonlinear nucleation and growth model. These findings highlight the critical role of domain-wall dynamics and suggest domain engineering as a viable strategy to tailor coercive fields in AlScN and related ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Challenges in Pulsed-Field Gradient Nuclear Magnetic Resonance on Magnetically Heterogeneous Interfaces: Sequence and Field-Dependent Apparent Diffusion Coefficients

It is well known that the internal gradient (gi) that exists within pores haunts the diffusion coefficient (D) as measured by the pulsed-field gradient (PFG) nuclear magnetic resonance (NMR). Several PFG-NMR methods developed to determine an accurate D were not successful. Then, the steady-state diffusion coefficient (Dapp,8) for the cation [C4mim]+ of [C4mim][Tf2N]; [1-butyl-3-methylimidazolium][bis(trifluoromethylsulfonyl)imde] ionic liquid confined in ordered mesoporous carbon (OMC) were determined by comparing Dapp,8 obtained from 1H PFG-NMR performed with three different stimulated echo sequences: STE, APFG, and MPFG under the two external magnetic field strength, B0 = 9.4 and 14.1 Tesla. The measured Dapp,8 which is an order of magnitude smaller than D of bulk [C4mim][Tf2N], is in good agreement between APFG and MPFG both in B0 = 9.4 and 14.1 Tesla. However, the strong gi artifact, which caused apparent diffusion coefficient (Dapp) depending strongly and weakly on B0 and temperature, respectively, in diffusion-time dependent Dapp, Dapp(?) obtained from a sequence with monopolar gradients (STE) was suppressed by using sequences employing bipolar gradients (APFG and MPFG) in the region of steady-state diffusion. But incompletely suppressed gi artifact resulting in the different behaviors of the early part of Dapp(?) between the sequences leads a ˜ 0.6 and 0.9 in MPFG and APFG, respectively, in the relationship between mean squared displacement and diffusion time: = 2Dta, where a = 0.5 and 1 for 1-dimensional single file diffusion and 3-dimensional bulk diffusion, respectively. The above observations clearly show that the diffusion behavior of ions/molecules within the pores and pore structure, such as the surface-to-volume ratio? (D?_app (?)=D_0 [1-4/(9vp) S/V v(D_0 ?)]) and tortuosity (T = D0/Dapp,8), are possible to be misunderstood, especially in the systems with a non-negligible gi. This work demonstrates that it may be necessary to test several PFG sequences under multiple external magnetic fields for the correct determination of the diffusion behavior of ions/molecules in the pores with a larger internal gradient, gi.

Han, Kee Sung↗
DOE OSTI2026

Magnetic field dependence of the spin fluctuations in CeCu 5.8 ⁢Ag 0.2

Quantum phase transitions are among the most intriguing phenomena that can occur when the electronic ground state of correlated metals are tuned by external parameters such as pressure, magnetic field, or chemical substitution. Such transitions between distinct states of matter are driven by quantum fluctuations, and can give rise to macroscopically coherent phases that are at the forefront of condensed matter research. However, the nature of the critical fluctuations, and thus the fundamental physics controlling many quantum phase transitions, remain poorly understood in numerous strongly correlated metals. Here we study the model material CeCu 5.8⁢ Ag 0.2 to gain insight into the implications of critical fluctuations originating from different regions in reciprocal space. By employing an external magnetic field along the crystallographic 𝑎 and 𝑐 axis as auxiliary tuning parameter, we observe a pronounced anisotropy in the suppression of the quantum critical fluctuations, reflecting the spin anisotropy of the long-range ordered ground state at larger silver concentration. Coupled with the temperature dependence of the quantum fluctuations, these results suggest that the quantum phase transition in CeCu 5.8⁢ Ag 0.2 is driven by three-dimensional spin-density wave fluctuations.

Boraley, Xavier [Paul Scherrer Inst. (PSI), Villig↗
DOE OSTI2026

Electric field dependence of nanoscale cathodoluminescence inside Cr doped β-Ga 2 O 3 interfaces

Chromium (Cr) is a common impurity in β-Ga 2 O 3 crystals, where its characteristic R1 and R2 luminescence lines are susceptible to both the host crystal field and externally applied fields. Here, in this work, we demonstrate that the Cr cathodoluminescence (CL) quenches toward the bulk of the crystal but enhances with applied reverse bias, reflecting the effect of free carrier depletion with increasing electric field. Furthermore, we illustrate that the R1/R2 CL intensity ratio, measured as the integrated area ratio of R1 to R2, can be used as a direct probe of the electric field in a Ni-β-Ga 2 O 3 : Cr Schottky diode. This optical calibration method provides a complementary approach to conventional C–V and I–V measurements for determining electric field strength in the depletion region of β-Ga 2 O 3 -based Schottky diodes and can be extended to other semiconductors and multilayer device structures.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Robust and symmetric magnetic field dependency of superconducting diode effect in asymmetric Dirac semimetal SQUIDs

The recent demonstration of the superconducting diode effect (SDE) has generated renewed interest in superconducting electronics, in which devices such as compact superconducting diodes that can perform signal rectification with low-energy operations are needed. In this article, we present our results of robust and symmetric-in-magnetic-field SDE in asymmetric superconducting quantum interference devices (SQUIDs) realized in high-quality Dirac semimetal Cd 3 As 2 thin film grown by the molecular beam epitaxy technique. Consistent with previous work, a zero magnetic field SDE is observed. Furthermore, the difference in switching current is independent of the strength and polarity of an out-plane magnetic field in the range of −10 and 10 mT. We speculate that this robust symmetric-in-field SDE in our Dirac semimetal SQUIDs is due to the formation of helical spin texture, theoretically predicted in Dirac semimetals.

Current-voltage characteristic↗
DOE OSTI2024

Magnetic Materials Research at SRNL

Fig: Rietveld Refinement of room temperature PXRD data for annealed Ce2Fe14B (left panel), (Y0.1Ce1.9)Fe14B (middle panel), and (Lu0.1Ce1.90)Fe14B (right panel) alloys. All annealed alloys plotted are composed primarily of Ce2Fe14B phase with small α-Fe impurities. Vertical blue ticks correspond to the position of the calculated Bragg peaks of all phases (from top to bottom, 2-14-1 and α-Fe). Fig: (Left Panel) Field dependent magnetization measurements on aligned powder with the magnetic field applied along the easy direction for annealed Ce2Fe14B and (YxCe2-x)Fe14B (x=0.1, 0.2, 0.3, 0.4, 0.5) alloys. (Middle Panel) Field dependent magnetization measurements on aligned powder with the magnetic field applied along the hard direction for annealed Ce2Fe14B and (YxCe2-x)Fe14B (x=0.1, 0.2, 0.3, 0.4, 0.5) alloys. (Right Panel) The saturation magnetization of Ce2Fe14B and (YxCe2-x)Fe14B (x=0.1, 0.2, 0.3, 0.4, 0.5) alloys as determined from easy axis field dependent magnetization measurements.

Bretana, Alex↗
DOE OSTI2026

Quantum critical point followed by Kondo-like behavior due to Cu substitution in the itinerant antiferromagnet La 2 ⁢(Cu 𝑥 ⁢Ni 1−𝑥 ) 7

La 2 ⁢Ni 7 is an itinerant magnetic system with a small ordered moment of ∼ 0.1⁢µ 𝐵 /Ni and a series of antiferromagnetic (AFM) transitions at 𝑇 1 = 61.0K, 𝑇 2 = 56.5K, and 𝑇 3 = 42.2K. 𝑀 ⁡(𝐻), and 𝜌 ⁡(𝐻) isotherms as well as constant field 𝑀⁡ (𝑇) and 𝜌 ⁡(𝑇) measurements on single-crystalline samples manifest a complex, anisotropic 𝐻−𝑇 phase diagram with multiple phase lines. Here, in this study, we present the growth and characterization of single crystals of the La 2 ⁢(Cu 𝑥 ⁢Ni 1−𝑥 ) 7 series for 0 ≤ 𝑥 ≤ 0.181. We measured powder x-ray diffraction and composition, as well as anisotropic temperature- and field-dependent resistivity, temperature- and field-dependent magnetization, and temperature-dependent heat capacity on these single crystals. Using the measured data we infer a transition temperature-composition (𝑇−𝑥) phase diagram for this system to study the evolution of the AFM ordering upon Cu substitution. For 0 ≤ 𝑥 ≤ 0.097, the system remains magnetically ordered at base temperature with 𝑥 ≤ 0.012, showing signs of multiple AFM ordering temperatures. For the higher substitution levels 0.125 ≤ 𝑥 ≤ 0.181, there are no signatures of magnetic ordering, but anomalous features in resistance and heat capacity data are observed which are consistent with the Kondo effect in this system. The intermediate 𝑥 = 0.105 sample lies between the magnetic ordered and the Kondo regime and is in the vicinity of the AFM quantum critical point (QCP). Thus, La 2⁢ (Cu 𝑥 ⁢Ni 1−𝑥 ) 7 is an example of a small moment system that can be tuned through a QCP. Given these data combined with the fact that the La 2⁢ Ni 7 structure has kagomelike, Ni sublattices running perpendicular to the crystallographic 𝑐 axis, and a predicted 3⁢𝑑-electron flat band that contributes to the density of states near the Fermi energy, La 2 ⁢(Cu 𝑥 ⁢Ni 1−𝑥 ) 7 becomes a promising system to host and study exotic physics.

Das, Atreyee [Ames Laboratory, and Iowa State Univ↗
DOE OSTI2025

Refining the two-band model for highly compensated semimetals using thermoelectric coefficients

In studying compensated semimetals, the two-band model has proven extremely useful in capturing electrical conductivity under magnetic field, as a function of density and mobility of electronlike and holelike carriers. However, it rarely offers practical insight into magnetothermoelectric properties. Here, in this work, we report the field dependence of thermoelectric (TE) coefficients in a highly compensated semimetal NbSb 2 , where we find the Seebeck (𝑆 𝑥⁢𝑥 ) and Nernst (𝑆 𝑥⁢𝑦 ) coefficients increase quadratically and linearly with applied magnetic field, respectively. Such field dependence was predicted in previous work that studied a system of two parabolic bands, within semiclassical Boltzmann transport theory when the following two conditions are simultaneously met: 𝜔 𝑐 ⁢𝜏 ≫ 1 and tan ⁡𝜃 𝐻 ≪ 1, where 𝜔 𝑐 and 𝜏 refer to the cyclotron frequency and relaxation time, respectively, and 𝜃 𝐻 is the Hall angle. Under these conditions, we find the field dependence of the TE coefficients directly provides a relation between the electronlike (𝑛 𝑒 ) and holelike (𝑛 ℎ ) carrier densities, which in turn can be used to refine two-band model fitting. With this, we find the compensation factor ($\frac{|Δ⁢𝑛|}{𝑛_{𝑒}}$, where Δ⁢𝑛 = 𝑛 𝑒 −𝑛 ℎ ) of NbSb 2 is two orders of magnitude smaller than what was found in unrestricted fitting, resulting in a larger saturation-field scale for magnetoresistance. Within the same framework of the semiclassical theory, we also deduce that the thermoelectric Hall angle tan⁡ 𝜃 𝛾 = $\frac{𝑆_{𝑥⁢𝑦}}{𝑆_{𝑥⁢𝑥}}$ can be expressed as ($\frac{Δ⁢𝑛}{𝑛_{𝑒}}$ ×𝜔 𝑐 ⁢𝜏) −1 , which serves as a parameter to predict the degree of compensation. Our findings offer crucial insights into identifying empirical conditions for field-induced enhancement of TE performance and into engineering-efficient thermoelectric devices based on semimetallic materials.

electrical conductivity↗
DOE OSTI2026

Magnetic field induced modification of a first-order ferromagnetic transition in Eu 2 ⁢In

Here, we present a comprehensive study of the temperature-and magnetic-field-dependent magnetization, specific heat, and local crystal structure across the first-order ferromagnetic–paramagnetic transition in Eu 2 ⁢In. Anomalies in the magnetocaloric response are observed near 𝐻 ≈ 25 kOe, including changes in field scaling of magnetic entropy, local entropy exponent, and universal master curve, which suggest an apparent weakening of the first-order character of the transition. However, quantitative analysis of the magnetocaloric parameters together with modified Arrott plots demonstrates that the transition remains first order up to at least 70 kOe. Specific-heat measurements reveal a field-induced splitting of the sharp zero-field anomaly into a doublet, providing a natural explanation for the change in the magnetocaloric response. Magnetic-field-dependent extended x-ray absorption fine structure (EXAFS) measurements show no detectable field-induced changes in the local coordination environment of Eu. We therefore attribute these observations to a magnetic-field-induced two-step transition process in Eu 2 ⁢In.

Kumar, Ajay [Ames Laboratory (AMES), Ames, IA (Uni↗
DOE OSTI2024

Unlocking Mesoscopic Disorder in Graphitic Carbon with Spectroelectrochemistry

Intrinsic structural and oxidic defects activate graphitic carbon electrodes towards electrochemical reactions underpinning energy conversion and storage technologies. Yet, these defects can also disrupt the long-range and periodic arrangement of carbon atoms, thus, the characterization of graphitic carbon electrodes necessitates in-situ atomistic differentiation of graphitic regions from mesoscopic bulk disorder. Here, we leverage the combined techniques of in-situ attenuated total reflectance infrared spectroscopy and first-principles calculations to reveal that graphitic carbon electrodes exhibit electric-field dependent infrared activity that is sensitive to the bulk mesoscopic intrinsic disorder. With this platform, we identify graphitic regions from amorphous domains by discovering that they demonstrate opposing electric-field-dependent infrared activity under electrochemical conditions. Our work provides a roadmap for identifying mesoscopic disorder in bulk carbon materials under potential bias.

Disordered graphitic carbon electrodes↗
DOE OSTI2025

Optimizing superconducting Nb film cavities by mitigating medium-field Q -slope through annealing

Niobium films are of interest in applications in various superconducting devices, such as superconducting radiofrequency cavities for particle accelerators and superconducting qubits for quantum computing. In this study, we address the persistent medium-field Q-slope issue in Nb film cavities, which, despite their high-quality factor at low RF fields, exhibit a significant Q-slope at medium RF fields compared to bulk Nb cavities. Traditional heat treatments, effective in reducing surface resistance and mitigating the Q-slope in bulk Nb cavities, are challenging for Nb-coated copper cavities. To overcome this challenge, we employed DC bias high-power impulse magnetron sputtering to deposit Nb film onto a 1.3 GHz single-cell elliptical bulk Nb cavity, followed by annealing treatments aimed at modifying the properties of the Nb film. In-situ annealing at 340 °C increased the quench field from 10.0 to 12.5 MV m −1 . Vacuum furnace annealing at 600 °C and 800 °C for 3 h resulted in a quench field increase of 13.5 and 15.3 MV m −1 , respectively. Further annealing at 800 °C for 6 h boosted the quench field to 17.5 MV m −1 . Additionally, the annealing treatments significantly reduced the field dependence of the surface resistance. However, increasing the annealing temperature to 900 °C induced a Q-switch phenomenon in the cavity. The analysis of RF performance and material characterization before and after annealing has provided critical insights into how the microstructure and impurity levels in Nb films influence the evolution of the Q-slope in Nb film cavities. Our findings highlight the significant roles of hydrides, high local misorientation, and lattice and surface defects in driving field-dependent losses. By strategically optimizing film properties and controlling impurity levels, we demonstrate a promising pathway to mitigate the medium-field Q-slope, paving the way for more efficient superconducting RF technologies.

Nb film↗
DOE OSTI2024

On the trapped magnetic moment in type-II superconductors

In this article, measurements of the trapped (remanent) magnetic moment, M trap (H) , when a small magnetic field H is turned off after cooling below the superconducting transition temperature, T c , or ramping a magnetic field up and down after cooling in a zero magnetic field, offer substantial advantages in difficult cases of small samples and large field-dependent backgrounds, which is relevant for hydrogen-based ultra-high-T c superconductors (UHTS). Until recently, there was no need for a separate paper on the trapped magnetic flux for well-known critical-state models due to the simplicity of the physics involved. However, recent publications showed the need for such an analysis. This note summarizes the expectations for the Bean model with constant critical current density and the Kim model with field-dependent critical currents. It is shown that if the trapped moment is fitted to the power law, M trap $\propto$ H a , the fixed exponent α = 2 is exact for the Bean model, while Kim models show a wide interval of possible values, 2$\leqslant$a$\leqslant$4. Furthermore, accounting for reversible magnetization expands the range of possible exponents to 1$\leqslant$a$\leqslant$4. In addition, demagnetizing factors are essential and make the trapped moment orientation dependent even in isotropic materials. As a concrete application, it is shown that flux trapping experiments performed on H 3 S UHTS compounds can be well described using this generalized approach, lending further support to the type-II superconducting nature of H 3 S under ultra-high pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Spin and lattice dynamics of the two-dimensional van der Waals ferromagnet CrI3

Chromium tri-iodide (CrI 3 ) is a prototypical ferromagnetic van der Waals insulator with its genuinely two-dimensional (2D) long-range magnetic order below 45 K demonstrated recently. The underlying magnetic anisotropy has not been completely understood while both the Dzyaloshinskii-Moriya (DM) interaction and the Kitaev—Γ type interaction have been considered as the relevant magnetic Hamiltonian. In addition, the relation between the crystal structure and the magnetic order needs to be further elucidated concerning their possible coupling in few-layer samples and in the topmost surface layers of bulk samples. Here, we investigate these issues via temperature- and magnetic field-dependent terahertz spectroscopy on bulk CrI 3 single crystals, focusing on the dynamics of ferromagnetic resonances (FMRs) and optical phonons in the terahertz (THz) region from 4 to 120 cm -1 (from 0.5 to 15 meV). We narrow down the possible ranges of the interaction parameters such as the off-diagonal symmetric terms and the single-ion anisotropy. The accurate values of these parameters significantly constrain the magnitude of possible Kitaev—Γ exchange interaction and the topological magnon gap. Moreover, the structure-magnetism relationship was critically analyzed based on the temperature- and field-dependences of two E u in-plane optical phonon modes, which shows that the commonly believed structural phase diagram of CrI 3 , derived from surface-preferential data, has to be seriously modified.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effect of Ni substitution on the fragile magnetic system La 5 Co 2 Ge 3

La 5⁢ Co 2 ⁢Ge 3 is an itinerant ferromagnet with a Curie temperature T C of ~3.8K and a remarkably small saturated moment of 0.1µ B /Co. Here we present the growth and characterization of single crystals of the La 5 ⁢(Co 1–x⁢ Ni x ) 2 Ge 3 series for 0.00 ≤ x ≤ 0.186. Here we measured powder x-ray diffraction, composition as well as anisotropic temperature-dependent resistivity, temperature and field-dependent magnetization along with heat capacity on these single crystals. We also measured muon-spin rotation/relaxation (μ⁢SR) for some Ni substitutions (x = 0.027,0.036,0.074) to study the evolution of internal field with Ni substitution. Using the measured data we infer a low temperature, transition temperature-composition phase diagram for La 5 ⁢(Co 1–x ⁢Ni x ) 2 Ge 3 . We find that T C is suppressed for low dopings, x ≤ 0.014; whereas for 0.036 ≤ x ≤ 0.186, the samples are antiferromagnetic with a Néel temperature T N that goes through a weak and shallow maximum (T N ~ 3.4K for x~0.07) and then gradually decreases to 2.4 K by x = 0.186. For intermediate Ni substitutions, 0.016 ≤ x ≤ 0.027, two transition temperatures are inferred with T N >T C . Whereas the T–x phase diagram for La 5 ⁢(Co 1–x ⁢Ni x ) 2 Ge 3 and the T–p phase diagram determined for the parent La 5 ⁢Co 2 ⁢Ge 3 under hydrostatic pressure are grossly similar, changing from a low-doping or low-pressure ferromagnetic (FM) ground state to a high-doped or high-pressure antiferromagnetic (AFM) state, perturbation by Ni substitution enabled us to identify an intermediate doping regime where both FM and AFM transitions occur.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗