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Field Emission Current Transfer for Homopolar Machines

With the increasing electrification of transportation, the need for high power density electric machines is higher than ever. The required specific power for the more demanding applications, such as airplane propulsion, is over 20 kW/kg for multi-megawatt range power levels. Fully superconducting synchronous machines could reach the required performance, but significant challenges remain to be addressed such as AC losses management and rotating cryogenics implementation. Homopolar machines constitute the simplest electro-mechanical conversion systems possible, however the difficulty of establishing reliable and efficient low voltage, high DC current transfer from a stationary to a rotating system has prevented homopolar machines from competing with AC electrical machines. While sliding contacts or liquid metal contacts are feasible, they lead to high losses, high maintenance requirements and the use of environmentally unfriendly materials. We investigated field emission current transfer as an alternative to sliding contacts. We have demonstrated field emission current transfer in vacuum between a copper electrode and carbon nanotubes and diamond pyramids to evaluate the feasibility of contact-free current transfer for homopolar machines. The initial field emission testing was successfully demonstrated with current densities in the 10 mA/cm 2 range. The initial experiments validated the concept and supported the development of a roadmap for the development of contactless current transfer for homopolar machines, helped understand the limitations of the current test system and identify the key parameters that will lead to better performance.

99 GENERAL AND MISCELLANEOUS↗

Preliminary Results of Field Emission Cathode Tests

Preliminary screening tests of field emission cathodes such as chemical vapor deposited (CVD) diamond, textured pyrolytic graphite, and textured copper were conducted at background pressures typical of electric thruster test facilities to assess cathode performance and stability. Very low power electric thrusters which provide tens to hundreds micronewtons of thrust may need field emission neutralizers that have a capability of tens to hundreds of microamperes. From current voltage characteristics, it was found that the CVD diamond and textured metals cathodes clearly satisfied the Fowler-Nordheim emission relation. The CVD diamond and a textured copper cathode had average current densities of 270 and 380 mA/sq cm, respectively, at the beginning-of-life. After a few hours of operation the cathode emission currents degraded by 40 to 75% at background pressures in the 10(exp -5) Pa to 10(exp -4) Pa range. The textured pyrolytic graphite had a modest current density at beginning-of-life of 84 mA/sq cm, but this cathode was the most stable of all. Extended testing of the most promising cathodes is warranted to determine if current degradation is a burn-in effect or whether it is a long-term degradation process. Preliminary experiments with ferroelectric emission cathodes, which are ceramics with spontaneous electric polarization, were conducted. Peak current densities of 30 to 120 mA/sq cm were obtained for pulse durations of about 500 ns in the 10(exp -4) Pa pressure range.

Sovey, James S.↗

Tunneling in thin MOS structures

Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22-40 A have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with the exact theory for a trapezoidal barrier. Tunneling at lower fields is consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunneling into the indirect conduction band. Approximate dispersion relations are obtained over portions of the silicon-dioxide energy gap and conduction band.

Maserjian, J.↗

Oscillations in MOS tunneling

Oscillatory deviations from Fowler-Nordheim tunneling currents were measured in MOS capacitors with oxide thicknesses ranging from 30 to 75 A. The observed variation of oscillation phases and amplitudes with oxide thickness indicates that the Si-SiO2 interface is independent of oxide thickness only for thicknesses greater than 65 A. At lower thicknesses, the barrier height at the interface decreases gradually with oxide thickness at a rate on the order of 10 mV/A. At higher thicknesses, the barrier height is 4.08 eV. The energy dispersion relation with the SiO2 conduction band is parabolic. The mean free path within the SiO2 conduction band is on the order of 13 A.

Lewicki, G.↗