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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Both gallium oxide and gallium nitride have great potential for use as high power transparent conducting oxide materials for a wide range of optoelectronic applications. It is, therefore, important to determine the dynamic optical field breakdown for these materials. Here, we report laser damage thresholds for Ga 2 O 3 and GaN using 9 fs few-cycle pulses with a center wavelength near 760 nm. We determine laser-induced damage thresholds (LIDTs) for both single pulse and multi-pulse exposures, with multi-pulse LIDT showing significant reduction compared to single pulse LIDT (in some cases, >50%), possibly due to laser-induced defects. We show that Ga 2 O 3 and GaN have an ultrafast optical field breakdown of 23 and 18 GV/m when nearly polarized along their [010] and [111] planes, respectively, extending their suitability for high power applications to the ultrashort pulse regime. To accurately characterize the excited carrier density criteria in which apparent laser damage occurs, carrier excitation dynamics for the entire laser pulse interaction were simulated using a modified Keldysh ionization model. For the measured single-shot threshold fluences, the plasma critical density was surpassed by 2 orders of magnitude and 2D finite-difference time-domain simulations were employed to understand the pulse interaction near the surface.

Tripepi, Michael↗
DOE OSTI2025

Multiscale Explanation of the Missing Gallium Vacancy in Gallium Arsenide

Irradiation of gallium arsenide (GaAs) produces immobile vacancies and mobile interstitials. Yet, after decades of experimental investigation, the immobile Ga vacancy continues to evade detection, raising the question: where is the Ga vacancy? Static first-principles calculations predict a Ga vacancy should be readily observed. We find that short-time dynamical evolution of primary defects is the key to explaining this conundrum. Using a dynamical multiscale atomistically informed device engineering (AIDE) method, we discover that during the initial displacement damage, the Ga vacancy (3-/2-) defect level pins the Fermi level near the midgap, producing oppositely charged vacancies and interstitials. Driven by Coulomb attraction, fast As interstitials preferentially annihilate Ga vacancies. The Ga vacancy population plummets below detectable limits—and the now unpinned Fermi level recovers—before being experimentally observed. This dynamical model solves the mystery of the missing Ga vacancy and reveals the importance of a multiscale approach to explore the dynamical chemical behavior in experimentally inaccessible short-time regimes.

Diaz, Leopoldo [Sandia National Laboratories (SNL-↗
DOE OSTI2023

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

β ‐Ga 2 O 3 ‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p ‐NiO/n‐ β ‐Ga 2 O 3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio ( I ON / I OFF ) of more than 10 6 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on ( V ON ) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β ‐Ga 2 O 3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β ‐Ga 2 O 3 can significantly improve high‐temperature electronic device and sensor performance.

Sohel, Shahadat H.↗
DOE OSTI2025

Neutral but Impactful: Gallium Cluster-Induced Nanopores from Beam-Blanked Gallium Ion Sources

Neutral atoms originating from liquid metal ion sources are an often-overlooked source of contamination and damage in focused ion beam microscopy. Beyond ions and single atoms, these sources also generate atom clusters. While most studies have investigated charged clusters, here we demonstrate that neutral clusters are also formed. These neutral clusters bypass the electrostatic beam blanking system, allowing them to impinge on samples even when the ion beam is blanked. We investigate this phenomenon using thin (≤20 nm) freestanding membranes of hexagonal boron nitride, silicon, and silicon nitride as targets. Randomly dispersed nanopores that form upon neutral cluster exposure are revealed. The average nanopore diameter is ∼2 nm with a narrow size distribution, suggesting that the atom clusters have a preferred size. Various electron microscopy techniques are used to characterize the nanopores, including high-resolution transmission electron microscopy, multislice ptychography, and electron energy-loss spectroscopy. Finally, we show how electron irradiation in the transmission electron microscope can be used to both remove any amorphous material that may clog the pores and to controllably grow the pores to specific sizes. Tunable nanopores such as these are interesting for nanofluidic applications requiring size-selective membranes.

Byrne, Dana O↗
DOE OSTI2026

Transforming E-Waste Into Strategic Resources: Techno-Economic Analysis of Gallium and By-products Recovery from LEDs via Bioleaching

The growing demand for gallium in optoelectronics and renewable energy applications raises concerns about supply security and production sustainability. This study evaluates the techno-economic feasibility of recovering gallium and by-products (copper and nickel) from waste GaN-based LEDs via bioleaching. A process flowsheet encompassing transportation, robotic disassembly, ball milling, bioleaching, solvent extraction/electrowinning, and refining was modeled. Based on mass balance analysis, more than 53 tons of LED waste are required annually to yield 1 kg of gallium alongside substantial copper and nickel co-products. Preliminary techno-economic analysis (TEA) shows an average total cost (ATC) of 6.84 USD/kg metal when costs are allocated by mass-weighted economic value (market price) fraction, corresponding to 6.75 USD/kg for copper, 15.91 USD/kg for nickel, and 470.95 USD/kg for gallium. For gallium, direct operational costs account for more than 70% of the cost. Monte Carlo simulations further quantify cost uncertainties under market price fluctuations. This work represents the first TEA of gallium recovery from GaN-based LEDs and highlights potential pathways for future cost reduction.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Enhancing supply resilience for critical materials: case study of gallium supply in the United States

Accelerating energy technology development will increase demand for critical raw materials, such as gallium, that enable clean energy technologies. Processing of gallium is concentrated in mainland China (98 % of global production in 2023), resulting in high supply risks for importing countries. To investigate pathways for more resilient supply, we develop a material flow analysis and apply it to the United States, showing the impacts of future domestic primary raw material production and end-of-life (EoL) product recycling on reducing import reliance of raw gallium metal. We complement this analysis with a techno-economic assessment of North American gallium production costs under various demand growth scenarios. Our results indicate that sufficient domestic feedstocks exist to meet U.S. demand under most scenarios by 2035, while EoL recycling can supply up to 50 % under a low-demand growth scenario. Domestic primary production shows significant cost advantages over gallium recycling.

Cost analysis↗
DOE OSTI2023

Photonuclear Production of 67 Cu From Gallium

Copper-67 is a radioisotope of interest for medical imaging and therapy as well as for under- standing stellar and interstellar evolution pertaining to the formation of proton-rich nuclei. Since 67 Cu decays 100% to 67 Zinc, understanding this reaction can shed light on the abundance of this and other p-nuclei elements in the universe. Here, the photonuclear production of 67 Cu from 71 Ga and natural gallium is examined as an alternative to its photoproduction from zinc. Two research and development production runs were performed at Thomas Jefferson National Accelerator Facility using an electron linac. During the first run, an 805-W, 30.9-MeV beam was used to irradiate a 1-mm tungsten radiator to create a bremsstrahlung flux. The resulting gamma photons irradiated 50.9 g of natural gallium encased in a graphite crucible for 24.2 h; 7.02 Bq/W∙s∙kg of 67 Cu activity was produced. During the second run, a 4380-W, 31.5-MeV beam was used for 12.0 h on the same target containing 60 g of natural gallium; 6.41 Bq/W∙s∙kg of 67 Cu activity was produced. Because of the difficulties in spectroscopically differentiating 67 Cu from 67 Ga, prior to each run, an isotopically pure 71 Ga disk was irradiated using a 100-W beam for 1 h, at the same respective energies. Finally, these baseline irradiations allowed for separation of 67 Cu from 67 Ga in the spectroscopic measurements of the natural gallium targets.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2022

Electronic structure of intrinsic defects in c -gallium nitride: Density functional theory study without the jellium approximation

Here, we report the first nonjellium, systematic, density functional theory (DFT) study of intrinsic and extrinsic defects and defect levels in zinc-blende (cubic) gallium nitride. We use the local moment counter charge (LMCC) method, the standard Perdew-Becke-Ernzerhoff (PBE) exchange-correlation potential, and two pseudopotentials, where the Ga 3$\textit{d}$ orbitals are either in the core ($d^0$) or explicitly in the valence set ($d^{10}$). We studied 64, 216, 512, and 1000 atom supercells, and demonstrated convergence to the infinite limit, crucial for delineating deep from shallow states near band edges, and for demonstrating the elimination of finite cell-size errors. Contrary to common claims, we find that exact exchange is not required to obtain defect levels across the experimental band gap. As was true in silicon, silicon carbide, and gallium arsenide, the extremal LMCC defect levels of the aggregate of defects yield an effective LMCC defect band gap that is within 10% of the experimental gap (3.3 eV) for both pseudopotentials. We demonstrate that the gallium vacancy is more complicated than previously reported. There is dramatic metastability–a nearest-neighbor nitrogen atom shifts into the gallium site, forming an antisite, nitrogen vacancy pair, which is more stable than the simple vacancy for positive charge states. Our assessment of the $d^0$ and $d^{10}$ pseudopotentials yields minimal differences in defect structures and defect levels. The better agreement of the $d^0$ lattice constant with experiment suggests that the more computationally economical $d^0$ pseudopotentials are sufficient to achieve the fidelity possible within the physical accuracy of DFT, and thereby enable calculations in larger supercells necessary to demonstrate convergence with respect to finite size supercell errors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Gallium neutrino absorption cross section and its uncertainty

In the recent Baksan Experiment on Sterile Transitions (BEST), a suppressed rate of neutrino absorption on a gallium target was observed, consistent with earlier results from neutrino source calibrations of the SAGE and GALLEX/GNO solar neutrino experiments. The BEST Collaboration, utilizing a 3.4 MCi 51 Cr neutrino source, found observed-to-expected counting rates at two very short baselines of 𝑅 = 0.791 ± 0.05 and 0.766 ± 0.05, respectively. Among recent neutrino experiments, BEST is notable for the simplicity of both its neutrino spectrum, line neutrinos from an electron-capture source whose intensity can be measured to a estimated precision of 0.23%, and its absorption cross section, where the precisely known rate of electron capture to the gallium ground state, 71 Ge ⁢(𝑒−, 𝜈 𝑒 )⁢ 71 Ga ⁢(g.s.), establishes a minimum value. However, the absorption cross section uncertainty is a common systematic in the BEST, SAGE, and GALLEX/GNO neutrino source experiments. Here, in this work, we update that cross section, considering a variety of electroweak corrections and the role of transitions to excited states, to establish both a central value and reasonable uncertainty, thereby enabling a more accurate assessment of the statistical significance of the gallium anomalies. Results are given for 51 Cr and 37 Ar sources. The revised neutrino capture rates are used in a reevaluation of the BEST and gallium anomalies.

electroweak interactions in nuclear physics↗
DOE OSTI2026

Complexity in the medium-range order of gallium as a polyvalent liquid metal

Simplicity in chemical composition does not always translate into simplicity in the structures and dynamics of liquids and solids. Some elementary liquid metals, such as gallium, show unusual behaviors in thermodynamic and transport properties as a result of their complex atomic structure and dynamics. Here, in this work, we study the real-space atomic correlation function of liquid gallium by neutron scattering. In the pair-distribution function, there exist two kinds of medium-range order (MRO), characterized by oscillations beyond the first nearest neighbors. On the other hand, the first neighbor shell shows only one kind of bond. The two types of MRO are strongly overlapping in space and fluctuating in time. We propose that they are the basis for anomalous behavior of liquid gallium. This view challenges the current view that liquid gallium consists of fluctuating metallic and insulating domains. These findings shed light on the interpretation of similar microscopic anomalies observed in other semimetallic liquids.

Hua, Chengyun [Oak Ridge National Laboratory (ORNL↗
DOE OSTI2023

Ultrathin Amorphous Gallium Oxide Vacuum Ultraviolet Photodetectors

Gallium oxide is demonstrated to be an effective material for the detection of vacuum-ultraviolet (VUV) photons. Nanometer thick films of amorphous gallium oxide deposited by atomic layer deposition are found to exhibit large absorptivity in the VUV region 120–200 nm. We leverage the strong absorption of the ultrathin film to fabricate self-powered Schottky diode photodetectors using graphene as a VUV-transparent electrode. In conclusion, responsivity throughout the VUV is calculated, significantly extending the demonstrated spectral range of gallium oxide-based photodetectors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Statistical significance of the sterile-neutrino hypothesis in the context of reactor and gallium data

We evaluate the statistical significance of the 3+1 sterile-neutrino hypothesis using $v_e$ and $\bar{v}_e$ disappearance data from reactor, solar and gallium radioactive source experiments. Concerning the latter, we investigate the implications of the recent BEST results. For reactor data we focus on relative measurements independent of flux predictions. For the problem at hand, the usual χ 2 -approximation to hypothesis testing based on Wilks’ theorem has been shown in the literature to be inaccurate. We therefore present results based on Monte Carlo simulations, and find that this typically reduces the significance by roughly 1σ with respect to the naïve expectation. We find no significant indication in favor of sterile-neutrino oscillations from reactor data. On the other hand, gallium data (dominated by the BEST result) show more than 5σ of evidence supporting the sterile-neutrino hypothesis, favoring oscillation parameters in agreement with constraints from reactor data. This explanation is, however, in significant tension (~3 σ) with solar neutrino experiments. In order to assess the robustness of the signal for gallium experiments we present a discussion of the impact of cross-section uncertainties on the results.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Laser-damage performance of gallium-alloy liquid metal mirrors

We explore the characteristics and laser-damage behavior of gallium-based liquid metal alloy mirrors under exposure to ns laser pulses. One of the key advantages of using liquid metal mirrors is the self-healing potential following perturbations arising from exposure to high-power laser pulses. In this work, key performance metrics, such as reflectivity and the laser-damage initiation mechanism and initiation threshold, were investigated using fused-silica cells filled with three different liquid metal Ga alloys. The results suggest that irreversible modification (damage) under 355-nm, 6-ns pulses are associated with the formation of gallium oxide, taking place at a fluence significantly higher than that for damage initiation in conventional metal mirrors. This behavior is believed to arise from the different damage initiation mechanism in liquid metal mirrors requiring increased laser absorbed energy for an irreversible modification of the material surface to occur. As a result, this exploratory work is the first of its kind and highlights some favorable performance characteristics of gallium-alloy metal mirrors.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

A data analysis method to rapidly characterize gallium concentration in plutonium matrices using LIBS

The processing of actinide samples is a complex and costly endeavor that requires compositional analysis at various stages. Laser-induced breakdown spectroscopy (LIBS) has been used to analyze actinide-containing samples in many nuclear applications including waste management, fuel processing and forensics. The LIBS spectrum obtained from actinide materials are generally extremely complex, exhibiting many thousands of strong emission lines. This makes it difficult to identify other elements within the sample of interest, given the rich and dominant actinide spectrum. Here, in this article, we describe a recent effort to identify and quantify impurities and alloying constituents in plutonium matrices using a hand-held LIBS instrument that is used to rapidly and efficiently measure an emission spectrum from a material sample. We tabulate the emission line positions and intensities of plutonium. We report the development of machine-learning software that can identify gallium and quantify its concentration in plutonium matrices. This work has the potential to provide a rapid and nearly non-destructive technique that allows more confidence in characterizing the composition of materials that are present within complex actinide associated targets. We describe how our LIBS measurements and data analysis methods have successfully quantified the gallium concentration in a variety of samples.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Gallium oxide semiconductor-based large volume ultrafast radiation hard spectroscopic scintillators

We report on the development of the first-ever inorganic radiation-hard moisture-insensitive large volume spectroscopic semiconductor-based scintillator with less than 2 ns decay time and light yields as high as 8000 ph/MeV. Despite extensive research into scintillator materials, the quest for an ideal scintillator combining ultrafast decay times (akin to BaF 2 and Yb-doped scintillators such as Lu 2 O 3 :Yb), high light yields (exceeding 2000 photons per MeV), spectroscopic capabilities, and exceptional radiation hardness remain unfulfilled. In this study, we demonstrate and report for the first time the viability of large-volume (up to 20 mm thickness) gallium oxide (β-Ga 2 O 3 ) semiconductor-based scintillators for applications requiring these properties. These β-Ga 2 O 3 scintillators were grown using the fast turnaround (~2 days) crucible-free optical float zone (FZ) technique. The high light yield and ultrafast decay time of these high-purity n-type semiconductors with free carrier concentration of 6 × 10 17 cm –3 are attributed to native defects, specifically oxygen vacancies (V O ) and gallium–oxygen vacancy pairs (V Ga –V O ), generated during optimized FZ growth. The ultrafast decay, along with high light yield, enables excellent timing resolution and high count rate detection for applications like time-of-flight positron emission tomography, physics experiments, and nuclear safety. The radiation hardness of these devices has been documented in a separate publication.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2025

Interpreting dynamic-compression experiments to uncover the time dependence of freezing: Application to gallium

Using pulsed-power magnetic field sources to compress gallium to gigapascal pressures on nanosecond timescales, we report here experiments on shockless dynamic compression of a liquid metal. Time-resolved velocimetry data reveal signatures of rapid freezing from a metastable liquid state, and we demonstrate that the kinetics of this nonequilibrium solidification can be accurately simulated with a computational modeling framework we have developed in previous studies, where classical nucleation theory is coupled with hydrodynamics. Notably, velocity traces in some of our experiments show evidence of a phase transition, while others do not, even though other types of evidence suggest that solidification may be occurring in all of them. We explain how predictions made by our models regarding the presence or absence of these phase-transition signatures motivated additional experiments that later confirmed the theoretical predictions. Our analysis shows that due to the rapid, quasi-isentropic nature of the loading path, our experiments were able to compress liquid gallium to metastable states that are undercooled below the equilibrium melt temperature by more than 300 K and exhibit pressures that approach five times the equilibrium melt pressure. The understanding gained in this study should form the basis for future dynamic-compression experiments aimed at interrogating melt curves at high pressures.

gallium↗
DOE OSTI2021

Evidence of an oxidation induced phase transformation for a delta phase plutonium-gallium alloy

The oxidation of an ~1.5 at% Ga plutonium metal alloy in dry air as a function of time was studied using a combination of FIB-SEM, AES, and XRD. Analysis of SEM images of FIB cross-sections of the oxide allowed for direct measurement of the oxide thickness as well as determination of heterogeneity in the extent of the oxide. AES analysis performed on cross-sections of the oxide allowed for quantitative analysis of the atomic composition and semi-quantitative analysis of the chemical composition. Initial preparation of the sample was found to induce a martensitic transformation to α' - Pu with an average thickness of 233 nm. Electropolishing was found to be sufficient to fully remove the α' layer with creation of only a minimum oxide layer. Growth of the oxide in dry air was found to initially follow parabolic kinetics, with a parabolic rate constant orders of magnitude higher than expected for δ-Pu but in-line with values extrapolated to room temperature for α-Pu. Following complete oxidation of the initial α` layer, further regions of plutonium metal depleted in gallium were observed to form at the oxide / metal interface. However, gallium, as Ga 2 O 3 , was found to be enriched at the surface and present in the oxide in an amount comparable to the relative Ga:Pu ratio of the bulk metal alloy. Finally, the results presented here serve to bridge a diverse array of previous experimental and theoretical data and provide the first comprehensive view of the fate of the δ-stabilizer during formation of an oxide.

36 MATERIALS SCIENCE↗