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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Nuclear Data Sheets for A = 75

The experimental nuclear spectroscopic data for known nuclides of mass number 75 (Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Kr, Rb, Sr) have been evaluated and presented together with Adopted properties for levels and γ rays. New high-spin data are available for {sup 75}Ga, and {sup 75}Rb; and lifetime data for high-spin states in {sup 75}Br and {sup 75}Kr. For ΔJ =1, M1+E2 transitions in two rotational bands in {sup 75}Kr, several B(E2)(W.u.) values are anomalously high, deviating by 2–3 σ values from currently accepted RUL(E2) = 300. In the opinion of the evaluators, there is need to remeasure level lifetimes and multipole mixing ratios in {sup 75}Kr to resolve this serious discrepancy. New precise single-particle transfer cross section data are available for {sup 75}Ga, {sup 75}Ge, {sup 75}As and {sup 75}Se from several different reactions (2009Ka06,2008Sc03); these data give information for occupancy of valence neutron orbitals in the ground states of target nuclides: {sup 76}Ge, {sup 76}Se and {sup 78}Se. No significant new data since the 1999 NDS for A = 75 have been reported for {sup 75}As and {sup 75}Se. No data are yet available for excited states in {sup 75}Co, {sup 75}Ni and {sup 75}Sr. For {sup 75}Fe, only the isotopic identification is made with one observed event. The radioactive decay schemes of {sup 75}Co and {sup 75}Ni are unknown while those for {sup 75}Rb and {sup 75}Sr are incomplete. This work supersedes the data presented in the previous NDS evaluation of A = 75 published by 1999Fa05.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1974

Optical properties of thin gold films applied to Schottky barrier solar cells

The Schottky barrier solar cell is considered a possible candidate for converting solar to electrical energy both for space and terrestrial applications. Knowledge of the optical constants of the ultrathin metal film used in the cell is essential for analyzing and designing higher efficiency Schottky barrier cells. The optical constants of 7.5 -nm (75-A) gold films on gallium arsenide have been obtained. In addition, the absolute collection efficiency of Schottky barrier solar cells has been determined from measured spectral response and optical constants of the gold film.

YEH Y. M.↗
DOE OSTI2013

Nuclear-spin observation of noise spectra in semiconductors

We propose a systematic method of obtaining the spectra of noises that cause the decoherence of spins in solids. Based on this method, we experimentally show that this method can be applied to nuclear spins in semiconductors. We clarify that the spectral intensity must be derived from the long-time tail of the multiple-echo decay. To obtain higher-frequency noise, the inversion-pulse interval must be as short as possible, which required us to employ the alternating-phase Carr-Purcell sequence instead of the widely used Carr-Purcell Meiboom-Gill. For {sup 75}As nuclear spin in variously-doped GaAs, we observed a Lorentzian spectrum, instead of the commonly observed 1/f spectrum. This indicates that the nuclear spins are indeed in a coherently-controlled state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Analysis of the transient response of nuclear spins in GaAs with/without nuclear magnetic resonance

As an alternative to studying the steady-state responses of nuclear spins in solid state systems, working within a transient-state framework can reveal interesting phenomena. The response of nuclear spins in GaAs to a changing magnetic field was analyzed based on the time evolution of nuclear spin temperature. Simulation results well reproduced our experimental results for the transient oblique Hanle signals observed in an all-electrical spin injection device. The analysis showed that the so called dynamic nuclear polarization can be treated as a cooling tool for the nuclear spins: It works as a provider to exchange spin angular momentum between polarized electron spins and nuclear spins through the hyperfine interaction, leading to an increase in the nuclear polarization. In addition, a time-delay of the nuclear spin temperature with a fast sweep of the external magnetic field produces a possible transient state for the nuclear spin polarization. On the other hand, the nuclear magnetic resonance acts as a heating tool for a nuclear spin system. This causes the nuclear spin temperature to jump to infinity: i.e., the average nuclear spins along with the nuclear field vanish at resonant fields of {sup 75}As, {sup 69}Ga and {sup 71}Ga, showing an interesting step-dip structure in the oblique Hanle signals. These analyses provide a quantitative understanding of nuclear spin dynamics in semiconductors for application in future computation processing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Structural investigation of the C-O complex in GaAs

A carbon-oxygen complex occurring in gallium arsenide crystals after annealing at around 700 °C is studied. Fourier transform infrared absorption measurements on the associated vibrational band at 2060 cm-1 under uniaxial stress reveal that the center has tetragonal symmetry. From the intensity of the {sup 18}O-related satellite band it is concluded that four oxygen atoms are involved. Ab initio local density calculations show that a tetragonal CO{sub 4} molecule forms a stable entity in the gallium arsenide lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

CeLAND: search for a 4th light neutrino state with a 3 PBq 144 Ce- 144 Pr electron antineutrino generator in KamLAND

The reactor neutrino and gallium anomalies can be tested with a 3-4 PBq (75-100 kCi scale) 144 Ce- 144 Pr antineutrino beta-source deployed at the center or next to a large low-background liquid scintillator detector. The antineutrino generator will be produced by the Russian reprocessing plant PA Mayak as early as 2014, transported to Japan, and deployed in the Kamioka Liquid Scintillator Anti-Neutrino Detector (KamLAND) as early as 2015. KamLAND's 13 m diameter target volume provides a suitable environment to measure the energy and position dependence of the detected neutrino flux. A characteristic oscillation pattern would be visible for a baseline of about 10 m or less, providing a very clean signal of neutrino disappearance into a yet-unknown, sterile neutrino state. This will provide a comprehensive test of the electron dissaperance neutrino anomalies and could lead to the discovery of a 4th neutrino state for Δm$2\atop{new}$ ≳ 0.1 eV 2 and sin 2 (2θ new ) > 0.05.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Current-Induced Spin Polarization in Nonmagnetic Semiconductors

The use of spontaneous electron spin polarization in nonmagnetic semiconductors avoids the transport challenges of electron spin injection from magnetic materials as well as packing constraints of small magnets in a dense array. Although the focus of rearch on the spontaneous spin polarization of electrical current has been on spin-orbit fields and their effects, in principle a moving electron gas can be unstable to forming spin-polarized distributions via carrier scattering processes that are independent of the carrier spin. The two required elements for such current-induced spin polarization without spin-orbit interactions are (1) the presence of built-in spatially-varying electric fields, either naturally forming (as in the Gunn effect) or extrinsic (as in a junction with spatially dependent doping) and (2) energy-dependent carrier scattering processes. As spin-orbit interactions are not required for this effect, it should occur in inversion-symmetric materials like silicon that lack zero-field spin splittings and materials like zinc oxide and gallium nitride that lack significant spin-orbit interactions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

White paper: CeLAND - Investigation of the reactor antineutrino anomaly with an intense 144 Ce- 144 Pr antineutrino source in KamLAND

We propose to test for short baseline neutrino oscillations, implied by the recent reevaluation of the reactor antineutrino flux and by anomalous results from the gallium solar neutrino detectors. The test will consist of producing a 75 kCi 144 Ce - 144 Pr antineutrino source to be deployed in the Kamioka Liquid Scintillator Anti-Neutrino Detector (KamLAND). KamLAND's 13m diameter target volume provides a suitable environment to measure energy and position dependence of the detected neutrino flux. A characteristic oscillation pattern would be visible for a baseline of about 10 m or less, providing a very clean signal of neutrino disappearance into a yet-unknown, "sterile" state. Such a measurement will be free of any reactor-related uncertainties. After 1.5 years of data taking the Reactor Antineutrino Anomaly parameter space will be tested at > 95% C.L.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Amorphous indium-tin-zinc oxide films deposited by magnetron sputtering with various reactive gases: Spatial distribution of thin film transistor performance

This work presents the spatial distribution of electrical characteristics of amorphous indium-tin-zinc oxide film (a-ITZO), and how they depend on the magnetron sputtering conditions using O{sub 2}, H{sub 2}O, and N{sub 2}O as the reactive gases. Experimental results show that the electrical properties of the N{sub 2}O incorporated a-ITZO film has a weak dependence on the deposition location, which cannot be explained by the bombardment effect of high energy particles, and may be attributed to the difference in the spatial distribution of both the amount and the activity of the reactive gas reaching the substrate surface. The measurement for the performance of a-ITZO thin film transistor (TFT) also suggests that the electrical performance and device uniformity of a-ITZO TFTs can be improved significantly by the N{sub 2}O introduction into the deposition process, where the field mobility reach to 30.8 cm{sup 2} V{sup –1} s{sup –1}, which is approximately two times higher than that of the amorphous indium-gallium-zinc oxide TFT.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Gallium vacancy ordering in Ga{sub 2}Se{sub 3} thin layers on Si(100), Si(111), and Si(123) substrates

Thin Ga{sub 2}Se{sub 3} layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different substrate orientations are discussed. The Ga{sub 3}Se{sub 4}(100)с(2 × 2) and Ga{sub 2}Se{sub 3}(111)(√3 × √3)-R30° ordered structures are formed on the Si(100) and Si(111) surfaces, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Millimeter-wave system-on-chip advancement for fusion plasma diagnostics

Recent advances in radio-frequency system-on-chip technology have provided mm-wave fusion plasma diagnostics with the capability to overcome major challenges such as space inefficiency, inflexible installation, sensitivity, susceptibility to EMI, and prohibitively high cost of conventional discrete component assemblies as higher imaging resolution and data accuracy are achieved by increasing the number of channels. Nowadays, shrinking transistor gate lengths on fabrication techniques have enabled hundreds of GHz operation, which is suitable for millimeter-wave diagnostics on current and future tokamaks. The Davis Millimeter Wave Research Center (DMRC) has successfully developed V-band (55-75 GHz) transmitter and receiver chips for Microwave Imaging Reflectometer (MIR) instruments. The transmitter can illuminate 8 different frequencies simultaneously within 55-75 GHz. Moreover, the receiver has the capability to amplify the reflected signal (>30 dB) while offering 10-30× reduction in noise temperature compared to current MIR instruments. Plasma diagnostics requires ultra-wideband (more than 20 GHz) operation which is approximately nine times wider bandwidth than the recent commercial impetus for communication systems. Current efforts are underway for gallium-arsenide monolithic microwave integrated circuit receiver chips at W-band (75-110 GHz) and F-band (90–140 GHz) permitting measurements at higher toroidal magnetic fields.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

Ga{sub 2}O{sub 3}–In{sub 2}O{sub 3} thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity

The structure and electrical and optical properties of β-Ga{sub 2}O{sub 3}–In{sub 2}O{sub 3} thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium–indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Investigation of the Thermal Conductivity Terbium Gallium and Terbium Scandium Aluminum Garnet Crystals

The thermal conductivity of terbium gallium and terbium scandium aluminum garnet crystals has been studied by the method of steady-state longitudinal heat flow in the temperature range of 50‒300 K. The effect of the impurity composition of terbium gallium garnet crystals and the formula composition of terbium scandium aluminum garnet crystals on their thermal conductivity is shown.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy

Micro-Raman thermography is one of the most popular techniques for measuring local temperature rise in gallium nitride (GaN) high electron mobility transistors with high spatial and temporal resolution. However, accurate temperature measurements based on changes in the Stokes peak positions of the GaN epitaxial layers require properly accounting for the stress and/or strain induced by the inverse piezoelectric effect. It is common practice to use the pinched OFF state as the unpowered reference for temperature measurements because the vertical electric field in the GaN buffer that induces inverse piezoelectric stress/strain is relatively independent of the gate bias. Although this approach has yielded temperature measurements that agree with those derived from the Stokes/anti-Stokes ratio and thermal models, there has been significant difficulty in quantifying the mechanical state of the GaN buffer in the pinched OFF state from changes in the Raman spectra. In this paper, we review the experimental technique of micro-Raman thermography and derive expressions for the detailed dependence of the Raman peak positions on strain, stress, and electric field components in wurtzite GaN. We also use a combination of semiconductor device modeling and electro-mechanical modeling to predict the stress and strain induced by the inverse piezoelectric effect. Based on the insights gained from our electro-mechanical model and the best values of material properties in the literature, we analyze changes in the E{sub 2} high and A{sub 1} (LO) Raman peaks and demonstrate that there are major quantitative discrepancies between measured and modeled values of inverse piezoelectric stress and strain. We examine many of the hypotheses offered in the literature for these discrepancies but conclude that none of them satisfactorily resolves these discrepancies. Further research is needed to determine whether the electric field components could be affecting the phonon frequencies apart from the inverse piezoelectric effect in wurtzite GaN, which has been predicted theoretically in zinc blende gallium arsenide (GaAs).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Study of the Anisotropic Elastoplastic Properties of β-Ga{sub 2}O{sub 3} Films Synthesized on SiC/Si Substrates

The structural and mechanical properties of gallium oxide films grown on silicon crystallographic planes (001), (011), and (111) with a buffer layer of silicon carbide are investigated. Nanoindentation was used to study the elastoplastic properties of gallium oxide and also to determine the elastic recovery parameter of the films under study. The tensile strength, hardness, elasticity tensor, compliance tensor, Young’s modulus, Poisson’s ratio, and other characteristics of gallium oxide were calculated using quantum chemistry methods. It was found that the gallium oxide crystal is auxetic because, for some stretching directions, the Poisson’s ratio takes on negative values. The calculated values correspond quantitatively to the experimental data. It is concluded that the elastoplastic properties of gallium oxide films approximately correspond to the properties of bulk crystals and that a change in the orientation of the silicon surface leads to a significant change in the orientation of gallium oxide.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗