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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Ne{sup +} ion sputtering effect on amorphous Ga-In-Zn-O thin-film surface investigated by high-resolution XPS

The effect of Ne{sup +} ion sputtering on amorphous Ga-In-Zn-O (a-GIZO) thin films was investigated by using surface-sensitive, synchrotron-radiation-based, high-resolution X-ray photoelectron spectroscopy (XPS). a-GIZO thin films having different compositions (Ga{sub 2}O{sub 3}:In{sub 2}O{sub 3}:ZnO = 1:1:1, 2:2:1, 3:2:1, 4:2:1) were investigated. It was found out that the amounts of the In and Zn contents relative to that of Ga decreased noticeably after sufficient sputtering, and that there occurred a subgap state above the valence band maximum and metallic states at the In 3d and 4d core levels as well as at the Fermi edge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Strong circular photogalvanic effect in ZnO epitaxial films

A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Point defects introduced by InN alloying into In{sub x}Ga{sub 1-x}N probed using a monoenergetic positron beam

Native defects in In{sub x}Ga{sub 1-x}N (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for In{sub x}Ga{sub 1-x}N showed that vacancy-type defects were introduced with increasing InN composition, and the major defect species was identified as complexes between a cation vacancy and a nitrogen vacancy. The concentration of the divacancy, however, was found to be suppressed by Mg doping. The momentum distribution of electrons at the In{sub x}Ga{sub 1-x}N/GaN interface was close to that in defect-free GaN or In{sub x}Ga{sub 1-x}N, which was attributed to localization of positrons at the interface due to the built-in electric field, and to suppression of positron trapping by vacancy-type defects. We have also shown that the diffusion property of positrons is sensitive to an electric field near the In{sub x}Ga{sub 1-x}N/GaN interface.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Near-infrared InN quantum dots on high-In composition InGaN

We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Spontaneous formation of InGaN nanowall network directly on Si

We present the study on epitaxial growth of an InGaN nanowall network directly on Si by plasma-assisted molecular beam epitaxy. Scanning electron microscopy, high-resolution X-ray diffraction, and transmission electron microscopy together with energy-dispersive X-ray analysis infer the crystalline nature of the InGaN nanowall network, oriented along the C-axis, with In composition ranging from pure GaN to 40%. Room temperature photoluminescence is observed, indicating good optical quality. The nanowall network is highly in-plane electrically conductive.

36 MATERIALS SCIENCE↗
DOE OSTI2013

In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O{sup -} with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O{sub 2}). Dissociation of ZnO{sup -}, GaO{sup -}, ZnO{sub 2}{sup -}, and GaO{sub 2}{sup -} radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O{sup -} ion flux.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Structure and strain relaxation effects of defects in In{sub x}Ga{sub 1–x}N epilayers

The formation of trench defects is observed in 160 nm-thick In{sub x}Ga{sub 1–x}N epilayers with x≤0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase epitaxy. The trench defect density increases with increasing indium content, and high resolution transmission electron microscopy shows an identical structure to those observed previously in InGaN quantum wells, comprising meandering stacking mismatch boundaries connected to an I₁-type basal plane stacking fault. These defects do not appear to relieve in-plane compressive strain. Other horizontal sub-interface defects are also observed within the GaN pseudosubstrate layer of these samples and are found to be pre-existing threading dislocations which form half-loops by bending into the basal plane, and not basal plane stacking faults, as previously reported by other groups. The origins of these defects are discussed and are likely to originate from a combination of the small in-plane misorientation of the sapphire substrate and the thermal mismatch strain between the GaN and InGaN layers grown at different temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown on metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Effect of Cr and Mn ions on the structure and magnetic properties of GaFeO{sub 3}: Role of the substitution site

Effect of substitution of Cr and Mn in the Fe and Ga sites of GaFeO{sub 3} on the structural parameters and magnetic properties has been investigated by preparing GaFe{sub 1-x}Cr{sub x}(Mn{sub x})O{sub 3} and Ga{sub 1-x}Cr{sub x}(Mn{sub x})FeO{sub 3} starting with appropriate oxide precursors. It is shown that, starting with Cr or Mn substituted Ga{sub 2}O{sub 3}, one obtains Ga{sub 1-x}Cr{sub x}(Mn{sub x})FeO{sub 3}, while reaction of Cr or Mn substituted {alpha}-Fe{sub 2}O{sub 3} with Ga{sub 2}O{sub 3} yields GaFe{sub 1-x}Cr{sub x}(Mn{sub x})O{sub 3}. The structural parameters and magnetic properties vary significantly with the substitution site of Cr showing a large decrease in the unit cell parameters as well as the T{sub C} and other magnetic properties when the substitution is at the octahedral Fe (1, 2) site. Substitution of Cr at the octahedral Ga2 site results in marginal changes. Substitution of Mn in the Ga and Fe sites also show differences although the changes themselves are much smaller. First-principles calculations confirm such site-specificity and show how Cr substitution affects the properties differently when substituted at the Ga2 and Fe1 sites. - Graphical abstract: The important role of site-specific substitution of transition metal ions on the structure and magnetic properties of GaFeO{sub 3} has been investigated experimentally and theoretically. Highlights: > Substitution of transition metal ions to specific cation site. > Ionic radii of the cation dictate the disorder associated with the specific site. > Site-specificity explains magnetic ordering and structural parameters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Internal Field Shielding and the Quantum Confined Stark Effect in a Single In{sub x}Ga{sub 1-x}N Quantum Disk

Time-integrated and time-resolved microphotoluminescence studies were carried out on In{sub x}Ga{sub 1-x}N quantum disks embedded in GaN nanocolumns grown by molecular beam epitaxy. Emission at {approx}3.33 eV from confined states was detected and observed to blueshift with excitation power; a result of charge screening and the quantum confined Stark effect. The lifetime of the emission was measured to decrease with increasing excitation power, attributed to reduced band bending and resulting increased overlap of the confined electron and hole wave functions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Magnetic properties of the layered III-VI diluted magnetic semiconductor Ga{sub 1−x}Fe{sub x}Te

Magnetic properties of single crystalline Ga{sub 1−x}Fe{sub x}Te (x = 0.05) have been measured. GaTe and related layered III-VI semiconductors exhibit a rich collection of important properties for THz generation and detection. The magnetization versus field for an x = 0.05 sample deviates from the linear response seen previously in Ga{sub 1−x}Mn{sub x}Se and Ga{sub 1−x}Mn{sub x}S and reaches a maximum of 0.68 emu/g at 2 K in 7 T. The magnetization of Ga{sub 1−x}Fe{sub x}Te saturates rapidly even at room temperature where the magnetization reaches 50% of saturation in a field of only 0.2 T. In 0.1 T at temperatures between 50 and 400 K, the magnetization drops to a roughly constant 0.22 emu/g. In 0 T, the magnetization drops to zero with no hysteresis present. The data is consistent with Van-Vleck paramagnetism combined with a pronounced crystalline anisotropy, which is similar to that observed for Ga{sub 1−x}Fe{sub x}Se. Neither the broad thermal hysteresis observed from 100-300 K in In{sub 1−x}Mn{sub x}Se nor the spin-glass behavior observed around 10.9 K in Ga{sub 1−x}Mn{sub x}S are observed in Ga{sub 1−x}Fe{sub x}Te. Single crystal x-ray diffraction data yield a rhombohedral space group bearing hexagonal axes, namely R3c. The unit cell dimensions were a = 5.01 Å, b = 5.01 Å, and c = 17.02 Å, with α = 90°, β = 90°, and γ = 120° giving a unit cell volume of 369 Å{sup 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Studies of Valence Band Alignment Between Nitrided GaPN/GaP (111) Interface Using X-ray Photoelectron Spectroscopy

The analysis of core levels positions of Ga{sub 3}d, N{sub 1s} and P{sub 2}p at different etching depth from the plasma nitrided GaP (111) surface shows that the nitrogen ions interact with both Gallium and Phosphorous ions with nearly equal probability. The analysis of valence band spectra shows the type-II band alignment between GaPN{sub 0.22}/GaP and the valence band offset is {approx}2.2{+-}0.1 eV.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Band gap engineering of N-alloyed Ga{sub 2}O{sub 3} thin films

The authors report the tuning of band gap of GaON ternary alloy in a wide range of 2.75 eV. The samples were prepared by a two-step nitridation method. First, the samples were deposited on 2-inch fused silica substrates by megnetron sputtering with NH{sub 3} and Ar gas for 60 minutes. Then they were annealed in NH{sub 3} ambience at different temperatures. The optical band gap energies are calculated from transmittance measurements. With the increase of nitridation temperature, the band gap gradually decreases from 4.8 eV to 2.05 eV. X-ray diffraction results indicate that as-deposited amorphous samples can crystallize into monoclinic and hexagonal structures after they were annealed in oxygen or ammonia ambience, respectively. The narrowing of the band gap is attributed to the enhanced repulsion of N2p -Ga3d orbits and formation of hexagonal structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Free Carrier Absorption due to Dislocation Scattering in GaN Quantum Wells

Free carrier absorption (FCA) is studied in quantum well structures assuming electrons to be scattered by dislocations via strain field. Expression for FCA coefficient, {alpha} is obtained assuming radiation field to be polarized along the plane of quantum well. Numerical results of {alpha}, as function of photon frequency, {Omega} and well width, d are presented. Calculations show, FCA to decrease with increase in {Omega} with a kink observed at {Omega} = 7.79x10{sup 13} s{sup -1} indicating onset of inter subband transitions. {alpha} is found to be proportional to d{sup -3} and to increase with increase in dislocation density.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Ga{sub 1-x}Mn{sub x}N epitaxial films with high magnetization

We report on the fabrication of pseudomorphic wurtzite Ga{sub 1-x}Mn{sub x}N grown on GaN with Mn concentrations up to 10% using molecular beam epitaxy. According to Rutherford backscattering, the Mn ions are mainly at the Ga-substitutional positions, and they are homogeneously distributed according to depth-resolved Auger-electron spectroscopy and secondary-ion mass-spectroscopy measurements. A random Mn distribution is indicated by transmission electron microscopy, and no Mn-rich clusters are present for optimized growth conditions. A linear increase of the c-lattice parameter with increasing Mn concentration is found using x-ray diffraction. The ferromagnetic behavior is confirmed by superconducting quantum-interference measurements showing saturation magnetizations of up to 150 emu/cm{sup 3}.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Defect Formation in GaN Epitaxial Layers due to SHI Irradiation

GaN epitaxial layers were irradiated with 200 MeV swift heavy Ag ions at various fluences. These samples were then characterized by XRD and TEM. Increase in peak width (FWHM) with incident ion dose showed reduction in crystallinity of epitaxial layers. Cross sectional TEM images confirmed that at highest fluence (5x10{sup 12} ions/cm{sup 2}) electronic energy loss process caused structural defect formation in GaN layer.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Photodarkening Effect in a-(GaSe){sub 90}Ag{sub 10} Thin Films

The present paper reports the laser induced changes on the optical properties of a-(GaSe){sub 90}Ag{sub 10} thin films prepared by thermal evaporation technique. Thin film samples, on glass substrate, were exposed to laser light of wavelength {lambda} = 532 nm for different exposure times, t{sub E}(t{sub E}=0{sub s}, 500 s, 1000 s and 3000 s). Optical parameters like absorption coefficient and optical energy gap of as- deposited thin film and their laser induced changes were studied at three different times of exposure. The value of absorption coefficient of these thin film increases on exposing the film to laser irradiation. The optical absorption edge shift to lower photon energy i.e. the Photodarkening (PD) effect occurs. The results have been explained on the basis of structural changes that are occurring after the laser irradiation.

36 MATERIALS SCIENCE↗