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Nuclear Data Sheets for A = 168

Nuclear structure data pertaining to all nuclei with mass A=168 (Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt) have been evaluated and incorporated into the ENSDF data file. This evaluation supersedes the previous publication (V.S. Shirley, Nuclear Data Sheets 71, 261 (1994) (literature cutoff date July 1993)) and subsequent ENSDF file revisions for Tb and Dy (C. Baglin, literature cutoff date of 15 June 1999) and Hf (B. Singh, literature cutoff date of 30 April 2001), and includes literature available by 15 June 2010. Since the above evaluations, the first excited states in {sup 168}Pt have been identified (1998Ki20, 2009Go16) and {alpha} decay from {sup 172}Hg has been observed (2009Sa27, 2004Ke06, 1999Se14). New levels in {sup 168}Dy have been excited using the {sup 170}Er({sup 82}Se,{sup 84}Kr{gamma}) reaction (2010So03). (HI,xn{gamma}) studies have significantly expanded our knowledge of level structure in {sup 168}Lu (1999Ka17, 2002Ha33), {sup 168}Ta (2008QiZZ), {sup 168}Yb (1995Fi01), {sup 168}Tm (2007CaZW), {sup 168}Hf (2009Ya21), {sup 168}Os (2001Jo11, 2009Od02) and, for {sup 168}Tm, important information has come also from (d,2n{gamma}) and ({alpha},n{gamma}) reactions (1995Si20). Revised decay schemes are available following new studies of {sup 168}Hf {epsilon} decay (6.7 min) (1997Ba26), {sup 168}Lu {epsilon} decay (1999Ba65), {sup 168}Ta {epsilon} decay (2007Mc08) and {sup 172}Au {alpha} decay (2009Ha42). Significant new information for {sup 168}Er is available from (p,t) (2006Bu09), (d,p) and (t,d) (1996Ma50), ({gamma},{gamma}') (1996Ma18), (136Xe, X{gamma}) (2010Dr02), ({sup 238}U,{sup 238}U{sup '{gamma}}) (2003Wu07) and (n,n{sup '{gamma}}) (1998Be20, 1998Be62) reactions, and the availability of {gamma}{gamma} coin data (1994Ju02, 1996Gi09) for the (n,{gamma}) E=thermal reaction has resulted in some significant level scheme revisions.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Elastic rotation of Escherichia coli F{sub O}F{sub 1} having ε subunit fused with cytochrome b{sub 562} or flavodoxin reductase

Highlights: • Intra-molecular rotation of F{sub O}F{sub 1} ATP synthase was observed using a small bead probe. • Carboxyl-terminus of the ε subunit was fused to cytochrome b{sub 562} or flavodoxin reductase. • The F{sub O}F{sub 1} showed continual rotation with similar rate to the wild-type enzyme. • The intra-molecular rotation is flexible and elastic. - Abstract: Intra-molecular rotation of F{sub O}F{sub 1} ATP synthase enables cooperative synthesis and hydrolysis of ATP. In this study, using a small gold bead probe, we observed fast rotation close to the real rate that would be exhibited without probes. Using this experimental system, we tested the rotation of F{sub O}F{sub 1} with the ε subunit connected to a globular protein [cytochrome b{sub 562} (ε-Cyt) or flavodoxin reductase (ε-FlavR)], which is apparently larger than the space between the central and the peripheral stalks. The enzymes containing ε-Cyt and ε-FlavR showed continual rotations with average rates of 185 and 148 rps, respectively, similar to the wild type (172 rps). However, the enzymes with ε-Cyt or ε-FlavR showed a reduced proton transport. These results indicate that the intra-molecular rotation is elastic but proton transport requires more strict subunit/subunit interaction.

60 APPLIED LIFE SCIENCES↗

Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode

In this paper, we studied the electrical characteristic of Schottky diodes based on gold contact on nitridated GaAs substrates. The used (100) GaAs substrate is n-type with concentration of N{sub d} = 4.9 × 10{sup 15} cm{sup –3}. Nitridation process was performed using a N2 glow discharge source (GDS) creating N atomic species. A ultra-thin film with a thickness of 2.2 nm GaN is performed on GaAs surface. In order to study the electric characteristics under illumination, we use of a He–Ne laser of 1 mW power and 632.8 nm wavelength. The current–voltage (I–V) of the Au/GaN/GaAs structures was investigated at room temperature. The saturation current I{sub S}, the series resistance R{sub S} and the mean ideality factor n are, respectively, equal to 4.46 × 10{sup –07} A, 172 Ohm, 1.4 in the dark and to 5.64 × 10{sup –07} A, 148 Ohm, 1.21 under illumination. To analyze these results, a 1D-simulation code of forward and reverse current–voltage characteristics versus the critical parameters of a nitridated GaAs Schottky diode is implemented. The algorithm is based on the solution of the system composed by Poisson’s and continuities equations. In this calculation, we take into account the existence of the GaN layer and the localization of traps states in the perturbed interface. We have considered the W-shaped and U-shaped distribution of traps states in the band gap. The effects of the doping concentration of GaAs, the traps states density, light intensities and the work function of gold ϕ{sub m} are investigated. By fitting the experimental curve, we can deduce the values of the traps states and the exact value of the work function of gold, and consequently we validate the developed model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrical and structural properties of (Pd/Au) Schottky contact to as grown and rapid thermally annealed GaN grown by MBE

We studied effect of thermally annealed GaN surface on the electrical and structural properties of (Pd/Au) Schottky contact to Ga-polar GaN grown by molecular beam epitaxy on Si substrate. Current voltage (I-V) measurement was used to study electrical properties while X-ray diffraction (XRD) measurement was used to study structural properties. The Schottky barrier height calculated using I-V characteristics was 0.59 eV for (Pd/Au) Schottky contact on as grown GaN, which increased to 0.73 eV for the Schottky contact fabricated on 700 °C annealed GaN film. The reverse bias leakage current at -1 V was also significantly reduced from 6.42×10{sup −5} A to 7.31×10{sup −7} A after annealing. The value of series resistance (Rs) was extracted from Cheung method and the value of R{sub s} decreased from 373 Ω to 172 Ω after annealing. XRD results revealed the formation of gallide phases at the interface of (Pd/Au) and GaN for annealed sample, which could be the reason for improvement in the electrical properties of Schottky contact after annealing.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗