Search NASA⌕ Search

SEARCH · Search NASA

Results for “GaAsP”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

9 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

GaAsP on GaP top solar cells

GaAsP on GaP top solar cells as an attachment to silicon bottom solar cells are being developed. The GaAsP on GaP system offers several advantages for this top solar cell. The most important is that the gallium phosphide substrate provides a rugged, transparent mechanical substrate which does not have to be removed or thinned during processing. Additional advantages are that: (1) gallium phosphide is more oxidation resistant than the III-V aluminum compounds, (2) a range of energy band gaps higher than 1.75 eV is readily available for system efficiency optimization, (3) reliable ohmic contact technology is available from the light-emitting diode industry, and (4) the system readily lends itself to graded band gap structures for additional increases in efficiency.

Mcneely, J. B.↗
NASA NTRS1991

GaAsP Photodiodes As X-Ray Detectors

Tests show commercial G1126-02 GaAsP photodiodes designed as ultraviolet detectors modified easily for use as x-ray detectors. Have quartz windows. When used to measure ultraviolet fluxes, windows or other apertures in optical paths covered with optical filters. To modify one of these photodiodes for x-ray application, one removes quartz window and replaces with aluminum foil, which blocks ultraviolet and visible radiation. GaAsP cells cost less than Si cells do and less damaged by radiation.

Laue, Eric G.↗
NASA NTRS1987

Mechanically-stacked tandem solar cells with GaAsP on GaP and silicon

Preliminary results are encouraging for the achievement of high conversion efficiencies using a GaAsP top solar cell mechanically stacked on a conventional silicon solar cell. A realistic maximum of 29.4 percent is suggested when both the top and bottom solar cells are state of the art. Practical system efficiencies greater than 25 percent are attainable in the near future with the use of a state of the art bottom solar cell.

Negley, Gerald H.↗
NASA NTRSDate not supplied

Electron Irradiation Study of Metamorphic 1.7 eV GaAsP Solar Cells

We investigated the effects of 1 MeV electron irradiation on metamorphic ~1.7 eV GaAsP solar cells on GaP and on GaP/Si. Effects of junction polarity, base thickness, and threading dislocation density on radiation hardness were investigated using the AM0 solar simulator at NASA Glenn Research Center. Degradation of solar cell efficiency after irradiation was dominated by reduced minority carrier diffusion length in the base, leading to loss of long-wavelength carrier collection. Designs with higher base diffusion length or thinner base were favored, and accordingly, devices with n+/p junction polarity were more radiation-hard than those with p+/n junction polarity.

Ryan D Hool↗
NASA NTRS1988

Optical and electrical measurements on UV sensitive photodiodes

The optical and electrical characteristics of the various types of photodiodes potentially useful for UV radiometers were studied. It was concluded that both GaAsP and GaP photodiodes have advantages over silicon photodiodes in terms of spectral response and UV stability. Both GaAsP and GaP have excellent electrical characteristics for low frequency radiometers, although their high capacitance could be inconvenient for high frequency applications. GaAsP is particularly good with respect to dynamic range.

Lyall, H.↗
NASA NTRS1980

CdInP semiconductor alloy

Semiconductor alloy of CdSInP deposited onto CdS substrate using liquid-phase epitaxy (LPE) employed in solvent is replacement for InP n- and p-type heterojunction layers contained in GaAsp laser devices. Alloy will aid in lowering current density of laser and enhance its longevity and CW operation at room temperature.

Hawrylo, F. Z.↗
NASA NTRS1979

III-V alloy heterostructure high speed avalanche photodiodes

Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 micron. Early stages of development show very encouraging results. High speed response of less than 35 ps and high quantum efficiency more than 95 percent have been obtained. The dark currents and the excess avalanche noise are also dicussed. A direct comparison of GaAlSb, GaAlAsSb, and In GaAsP avalanche photodiodes is given.

Law, H. D.↗