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Results for “GaN–FET”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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10 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2011

Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.

Patterson, Richard↗
NASA NTRS2013

Effects of Thermal Cycling on Control and Irradiated EPC 2nd Generation GaN FETs

The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling in order to address their reliability for use in space missions. Results of the experimental work are presented and discussed.

field effect transistor↗
DOE OSTI2021

EMI Mitigation of a Ćuk-Based Power-Electronic System Using Switching-Sequence-Based Control

Switching-sequence-based control (SBC) laws when designed based on topological switching behavior can have positive effects on slow- and fast-scale dynamics of a power-electronic system (PES). The slow-scale control can encompass fast PES state regulation and tracking, based on predefined objective, while fastscale control can address differential-mode (DM) and commonmode (CM) spectral-peak energy associated with PES switching operation. Such control laws may offer enhanced programmability to conventional PES design where bulky electromagnetic interference (EMI) filters have been traditionally used to reduce EMI of switching power converters to meet EMI regulatory standards. An EMI filter is always a less programmable solution since it is usually designed for the worst-case EMI mitigation and usually overkill for a PES operating under reduced load condition. The control scheme outlined in this article offers EMI mitigation across wide operating regions without compromising PES regulation. Moreover, it does so by use of switching sequences that guarantee the reachability of the PES dynamics using an advanced Lyapunov-function-based approach. SBC is a powerful tool to generate control actions for a PES based on multivariate PES state constraints. Hence, contemporary EMI regulatory standards are used as constraints in the SBC formulation to operate the PES under wide operating regime while autonomously mitigating the EMI levels. The work may be of paramount importance for operating the ultra-fast-transition recent wide-bandgap semiconductor devices like GaN–FET and SiC MOSFET under higher power with increasing switching frequencies, which is usually desirable for increased power density and reduced switching losses. Here, a hardware Cuk–PES operated ´ with GaN–FETs is fabricated and is used for case illustration. It is shown by experimental results how SBC mitigate DM and CM EMI noise of the PES while maintaining regulation even for the higher order nonminimum phase PES, while reducing sensor requirements using state observer derived from the switching model of the PES.

42 ENGINEERING↗
DOE OSTI2024

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

GaN/InGaN microLEDs are a very promising technology for next-generation displays. Switching control transistors and their integration are key components in achieving high-performance, efficient displays. Monolithic integration of microLEDs with GaN switching devices provides an opportunity to control microLED output power with capacitive (voltage)-controlled rather than current-controlled schemes. This approach can greatly reduce system complexity for the driver circuit arrays while maintaining device opto-electronic performance. In this work, we demonstrate a 3-terminal GaN micro-light emitting transistor that combines a GaN/InGaN blue tunneling-based microLED with a GaN n-channel FET. Further, the integrated device exhibits excellent gate control, drain current control, and optical emission control. This work provides a promising pathway for future monolithic integration of GaN FETs with microLED to enable fast switching, high-efficiency microLED display and communication systems.

42 ENGINEERING↗
DOE OSTI2022

A 1MHz Oak Ridge AC / DC Converter for UAV Contactless Charger Implementation

In this paper, a 1 MHz single-phase Oak Ridge Converter (ORC) AC/DC wireless power transfer (WPT) system is introduced for unmanned air vehicle (UAV) charging applications. The proposed advanced solution eliminates the design, weight, volume, and the cost of the power factor correcting (PFC) front-end rectifier compared to the conventional practices. Additionally, grid power quality requirements can be achieved with the presented innovative idea. With this method, single stage WPT primary side uses the hybrid grid frequency and high frequency (60 Hz and 1 MHZ) from ac source through the coupler coils and to UAV battery with GaN FETs. Experimental results of the single-phase system is presented to confirm the mathematical analyses with the source voltage of 110 VAC, RMS and output voltage of 40 VDC at 1 kW power with 6 inches air gap between couplers. The primary coupler consists of a ferrite-backed single-turn coil with a radius of 1.5 ft, and the secondary coupler is made with an air-core single-turn coil with radius of 1.2 ft. The system overall ac to dc efficiency is measured 77 % acquiring 0.99 power factor (PF) and 3.3 % current total harmonic distortion (THD) at 1 kW power.

Asa, Erdem↗
NASA NTRS2013

Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012

Scheick, Leif↗
NASA NTRS2013

Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012

Scheick, Leif↗