Results for “GaN MMIC”

Monolithic Integration of Self-Biased C -Band Circulator on SiC Substrate for GaN MMIC Applications

We have designed and fabricated the first self-biased circulator operating in C-band and monolithically integrated it with Qorvo's GaN MMIC technology by embedding a FeNi-based magnetic nanowire composite (MNC) in a 100 $μ$m thick SiC substrate. This integrated microstrip circulator shows a circulation frequency centered at 5.7 GHz, with an insertion loss of 2.7 dB and isolation of 14 dB. Additionally, the circulator demonstrated power handling of 9.6 W with continuous wave and at least 40W under pulsed conditions. This letter points a path in integrating miniaturized circulators into full-duplex GaN T/R MMICs with stringent form factor limits.